Institution · Agnitron Technology (United States)
Most cited papers from Agnitron Technology (United States)
What are the most cited papers from Agnitron Technology (United States)?
The most cited paper from Agnitron Technology (United States) is "MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature" (Yuewei Zhang, Fikadu Alema, Akhil Mauze et al., 2018), with 269 citations. Next come "Fast growth rate of epitaxial β–Ga2O3 by close coupled showerhead MOCVD" (157) and "MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor" (143).
Showing 50 of 89 papers. Every paper is listed.
| # | Paper | ||
|---|---|---|---|
| 1 | MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature Yuewei Zhang, Fikadu Alema, Akhil Mauze et al. · APL Materials | 12 Dec 2018 | 269 |
| 2 | Fast growth rate of epitaxial β–Ga2O3 by close coupled showerhead MOCVD Fikadu Alema, Brian Hertog, Andrei V. Osinsky et al. · Journal of Crystal Growth | 3 Jun 2017 | 157 |
| 3 | MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor George A. Seryogin, Fikadu Alema, Nicholas A. Valente et al. · Applied Physics Letters | 28 Dec 2020 | 143 |
| 4 | Low 114 cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD Fikadu Alema, Yuewei Zhang, Andrei V. Osinsky et al. · APL Materials | Feb 2020 | 105 |
| 5 | Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β -Ga2O3 Fikadu Alema, Yuewei Zhang, Andrei V. Osinsky et al. · APL Materials | Dec 2019 | 101 |
| 6 | Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film Fikadu Alema, Brian Hertog, Partha Mukhopadhyay et al. · APL Materials | Feb 2019 | 95 |
| 7 | Solar blind photodetector based on epitaxial zinc doped Ga2O3 thin film Fikadu Alema, Brian Hertog, Oleg Ledyaev et al. · physica status solidi (a) | 5 Jan 2017 | 93 |
| 8 | Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm² Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy et al. · IEEE Electron Device Letters | 27 Jul 2021 | 90 |
| 9 | Epitaxial $\beta$ -Ga2O3 and $\beta$ -(AlxGa1−x)2O3/ $\beta$ -Ga2O3 Heterostructures Growth for Power Electronics Ross Miller, Fikadu Alema, Andrei V. Osinsky · IEEE Transactions on Semiconductor Manufacturing | Oct 2018 | 88 |
| 10 | Ge doping of β-Ga2O3 by MOCVD Fikadu Alema, George A. Seryogin, A. Osinsky et al. · APL Materials | Sep 2021 | 81 |
| 11 | Vertical β -Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition Esmat Farzana, Fikadu Alema, Wan Ying Ho et al. · Applied Physics Letters | 19 Apr 2021 | 74 |
| 12 | 4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding 100 MW cm−2 Arkka Bhattacharyya, Shivam Sharma, Fikadu Alema et al. · Applied Physics Express | 13 Apr 2022 | 68 |
| 13 | High responsivity solar blind photodetector based on high Mg content MgZnO film grown via pulsed metal organic chemical vapor deposition Fikadu Alema, Brian Hertog, Oleg Ledyaev et al. · Sensors and Actuators A Physical | 9 Sep 2016 | 43 |
| 14 | H2O vapor assisted growth of β-Ga2O3 by MOCVD Fikadu Alema, Yuewei Zhang, Akhil Mauze et al. · AIP Advances | Aug 2020 | 41 |
| 15 | β-(AlxGa1−x)2O3/Ga2O3 heterostructure Schottky diodes for improved VBR2/RON Prakash P. Sundaram, Fikadu Alema, Andrei V. Osinsky et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films | 28 Jun 2022 | 39 |
| 16 | Characterization of β-Ga 2 O 3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates Marko Jak Tadjer, Fikadu Alema, Andrei V. Osinsky et al. · Journal of Physics D Applied Physics | 29 Sep 2020 | 39 |
| 17 | Near unity ideality factor for sidewall Schottky contacts on un-intentionally doped β-Ga2O3 Yuewei Zhang, Akhil Mauze, Fikadu Alema et al. · Applied Physics Express | 20 Feb 2019 | 37 |
| 18 | Low Resistance Ohmic Contact on Epitaxial MOVPE Grown β-Ga2O3 and β-(AlxGa1−x)2O3 Films Fikadu Alema, Carl Peterson, Arkka Bhattacharyya et al. · IEEE Electron Device Letters | 22 Aug 2022 | 35 |
| 19 | Growth of high Mg content wurtzite MgZnO epitaxial films via pulsed metal organic chemical vapor deposition Fikadu Alema, Oleg Ledyaev, Ross Miller et al. · Journal of Crystal Growth | 22 Nov 2015 | 35 |
| 20 | Tuning the responsivity of monoclinic ( I n x G a 1 − x ) 2 O 3 solar-blind photodetectors grown by metal organic chemical vapor deposition İsa Hatipoğlu, Partha Mukhopadhyay, Fikadu Alema et al. · Journal of Physics D Applied Physics | 6 Jul 2020 | 34 |
| 21 | Demonstration of MOCVD based in situ etching of β -Ga2O3 using TEGa Abishek Katta, Fikadu Alema, William N. Brand et al. · Journal of Applied Physics | 20 Feb 2024 | 30 |
| 22 | Dielectric properties of BaMg1∕3Nb2∕3O3 doped Ba0.45Sr0.55Tio3 thin films for tunable microwave applications Fikadu Alema, Konstantin I. Pokhodnya · Journal of Advanced Dielectrics | 26 Nov 2015 | 30 |
| 23 | Highly conductive epitaxial β -Ga 2 O 3 and β -(Al x Ga 1− x ) 2 O 3 films by MOCVD Fikadu Alema, Takeki Itoh, Samuel Vogt et al. · Japanese Journal of Applied Physics | 22 Aug 2022 | 26 |
| 24 | Characterization of (001) β-Ga2O3 Schottky diodes with drift layer grown by MOCVD Prakash P. Sundaram, Fengdeng Liu, Fikadu Alema et al. · Applied Physics Letters | 5 Jun 2023 | 25 |
| 25 | Validation of Predicted Residual Stresses within Direct Chill Cast Magnesium Alloy Slab Mark Turski, Anna Maria Paradowska, Shuyan Zhang et al. · Metallurgical and Materials Transactions A | 22 Feb 2012 | 25 |
| 26 | Characterization of HVPE‐grown UV LED heterostructures S Yu Kurin, Andrey Antipov, I. S. Barash et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics | Feb 2014 | 24 |
| 27 | Vertical solar blind Schottky photodiode based on homoepitaxial Ga2O3 thin film Fikadu Alema, Brian Hertog, Andrei V. Osinsky et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE | 24 Feb 2017 | 23 |
| 28 | 0.86 kV p-Si/(001)-Ga2O3 Heterojunction Diode Shuwen Xie, Md Tahmidul Alam, Jiarui Gong et al. · IEEE Electron Device Letters | 10 Jan 2024 | 21 |
| 29 | Kilovolt-class β-Ga2O3 MOSFETs on 1-in. bulk substrates Carl Peterson, Fikadu Alema, Arkka Bhattacharyya et al. · Applied Physics Letters | 19 Feb 2024 | 19 |
| 30 | Controllable nitrogen doping of MOCVD Ga2O3 using NH3 Fikadu Alema, Takeki Itoh, William N. Brand et al. · Applied Physics Letters | 19 Jun 2023 | 19 |
| 31 | Characteristics of grafted monocrystalline Si/ β -Ga2O3p–n heterojunction Jiarui Gong et al. · Applied Physics Letters | 24 Jun 2024 | 18 |
| 32 | Temperature stability of high-resistivity GaN buffer layers grown by metalorganic chemical vapor deposition Alexander Y. Polyakov, N. B. Smirnov, Elena A. Kozhukhova et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena | Sep 2013 | 18 |
| 33 | N2O grown high Al composition nitrogen doped β-(AlGa)2O3/β-Ga2O3 using MOCVD Fikadu Alema, Takeki Itoh, William N. Brand et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films | 13 Jun 2023 | 17 |
| 34 | Enhanced AlN nanostructures for pyroelectric sensors Everett E. Crisman, Alvin J. Drehman, Randy A. Miller et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics | Feb 2014 | 17 |
| 35 | Band alignment of grafted monocrystalline Si (0 0 1)/β-Ga2O3 (0 1 0) p-n heterojunction determined by X-ray photoelectron spectroscopy Jiarui Gong, Jie Zhou, Ashok Dheenan et al. · Applied Surface Science | 5 Feb 2024 | 16 |
| 36 | Epitaxial growth of Co3O4 thin films using Co(dpm)3 by MOCVD Fikadu Alema, Andrei V. Osinsky, Partha Mukhopadhyay et al. · Journal of Crystal Growth | 22 Aug 2019 | 12 |
| 37 | β -Ga 2 O 3 lateral transistors with high aspect ratio fin-shape channels Yuewei Zhang, Akhil Mauze, Fikadu Alema et al. · Japanese Journal of Applied Physics | 30 Nov 2020 | 11 |
| 38 | Can an aspect of consciousness be imprinted into an electronic device? William A. Tiller, Michael J Kohane, Walter E. Dibble · Integrative Psychological and Behavioral Science | Apr 2000 | 11 |
| 39 | NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films | 8 Mar 2023 | 10 |
| 40 | Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors David A. Deen, Ross Miller, Andrei V. Osinsky et al. · Journal of Applied Physics | 19 Dec 2016 | 10 |
| 41 | Spalling induced van der Waals lift-off and transfer of 4-in. GaN epitaxial films Michael R. Snure, Eric W. Blanton, Vitali Soukhoveev et al. · Journal of Applied Physics | 14 Jul 2023 | 9 |
| 42 | Band Offsets of the MOCVD-Grown β-(Al0.21Ga0.79)2O3/β-Ga2O3 (010) Heterojunction Timothy A. Morgan, Justin Rudie, Mohammad Zamani‐Alavijeh et al. · ACS Applied Materials & Interfaces | 18 Jul 2022 | 9 |
| 43 | Vertical NiO/β-Ga2O3 rectifiers grown by metalorganic chemical vapor deposition Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films | 24 Aug 2023 | 8 |
| 44 | Solar blind photodetector based on epitaxial zinc doped Ga2O3 thin film (Phys. Status Solidi A 5∕2017) Fikadu Alema, Brian Hertog, Oleg Ledyaev et al. · physica status solidi (a) | May 2017 | 8 |
| 45 | Characterization of extended defect evolution in 1.2–12 μm thick homoepitaxial (010) β-Ga2O3 grown by close-injection showerhead metal-organic chemical vapor deposition Marko Jak Tadjer, Kenny Huynh, James C. Culbertson et al. · APL Materials | Aug 2025 | 7 |
| 46 | Coordinated downregulation of the photosynthetic apparatus as a protective mechanism against UV exposure in the diatom Corethron hystrix Robert W. Read, David C. Vuono, Iva Neveux et al. · Applied Microbiology and Biotechnology | 7 Jan 2019 | 7 |
| 47 | MgZnO grown by molecular beam epitaxy on N-Type β-Ga2O3 for UV Schottky barrier solar-blind photodetectors Mykyta Toporkov, Partha Mukhopadhyay, Haider Ali et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE | 24 Feb 2017 | 7 |
| 48 | Growth of high quality ZnO thin films with a homonucleation on sapphire Ming Quan Wei, Ryan Casey Boutwell, Nikolai N. Faleev et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena | Jul 2013 | 7 |
| 49 | In situ patterned damage-free etching of three-dimensional structures in β-Ga2O3 using triethylgallium Nabasindhu Das, Fikadu Alema, William N. Brand et al. · Journal of Applied Physics | 13 Aug 2025 | 6 |
| 50 | High Mg content wurtzite phase MgxZn1-xO epitaxial film grown via pulsed-metal organic chemical vapor deposition (PMOCVD) Fikadu Alema, Oleg Ledyaev, Ross A. Miller et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE | 27 Feb 2016 | 6 |
Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.