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Institution · Cambridge Microelectronics (United Kingdom)

Most cited papers from Cambridge Microelectronics (United Kingdom)

Cambridge Microelectronics (United Kingdom)

What are the most cited papers from Cambridge Microelectronics (United Kingdom)?

The most cited paper from Cambridge Microelectronics (United Kingdom) is "Charge-Qubit Operation of an Isolated Double Quantum Dot" (Jeffrey A. Gorman, D. G. Hasko, D. R. Williams, 2005), with 406 citations. Next come "Uniform patterned growth of carbon nanotubes without surface carbon" (333) and "Fabrication of 5–7 nm wide etched lines in silicon using 100 keV electron-beam lithography and polymethylmethacrylate resist" (267).

Showing 50 of 60 papers. Every paper with more than 22 citations is listed.

Most cited papers, sortable by citations and release date
#Paper
1 Charge-Qubit Operation of an Isolated Double Quantum Dot Jeffrey A. Gorman, D. G. Hasko, D. R. Williams · Physical Review Letters Open access 24 Aug 2005 406
2 Uniform patterned growth of carbon nanotubes without surface carbon Ken B. K. Teo, M. Chhowalla, G. A. J. Amaratunga et al. · Applied Physics Letters 3 Sep 2001 333
3 Fabrication of 5–7 nm wide etched lines in silicon using 100 keV electron-beam lithography and polymethylmethacrylate resist Wei Chen, H. Ahmed · Applied Physics Letters 29 Mar 1993 267
4 Single optical photon detection with a superconducting tunnel junction Anthony J. Peacock, P. Verhoeve, N. Rando et al. · Nature May 1996 233
5 Carbon nanotube Schottky diode and directionally dependent field-effect transistor using asymmetrical contacts Min Ho Yang, K. B. K. Teo, William Ireland Milne et al. · Applied Physics Letters 16 Dec 2005 186
6 Fabrication of <5 nm width lines in poly(methylmethacrylate) resist using a water:isopropyl alcohol developer and ultrasonically-assisted development Shazia Yasin, D. G. Hasko, H. Ahmed · Applied Physics Letters 30 Apr 2001 163
7 Nanoscale colloidal particles: Monolayer organization and patterning Takahiro Satô, D. G. Hasko, Heba Adel Ahmed · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena 1997 142
8 InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal Rachel A. Oliver, G. Andrew D. Briggs, Menno J. Kappers et al. · Applied Physics Letters 24 Jul 2003 141
9 High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes S. N. Cha, Jae Eun Jang, Young‐Jin Choi et al. · Applied Physics Letters 25 Dec 2006 134
10 Aligned carbon nanotubes/fibers for applications in vacuum microwave amplifiers William Ireland Milne, K. B. K. Teo, Eric Minoux et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena 2006 122
11 Comparison of MIBK/IPA and water/IPA as PMMA developers for electron beam nanolithography Shazia Yasin, D. G. Hasko, H. Ahmed · Microelectronic Engineering Jul 2002 112
12 High-Voltage Integrated Circuits: History, State of the Art, and Future Prospects Don Disney, Ted Letavic, Tanya Trajkovic et al. · IEEE Transactions on Electron Devices 4 Jan 2017 110
13 The velocity of dislocations in ice Christopher Shearwood, Robert W. Whitworth · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties Aug 1991 102
14 Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors Min Ho Yang, K. B. K. Teo, Laurent Gangloff et al. · Applied Physics Letters 13 Mar 2006 95
15 Single-electron memory Kazuhiko Nakazato, Richard J. Blaikie, J. R. A. Cleaver et al. · Electronics Letters 18 Feb 1993 91
16 Characteristics of gas-assisted focused ion beam etching Richard J. Young, J. R. A. Cleaver, Hakima Khudher Ahmed · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Mar 1993 82
17 Silicon single electron memory cell Nicholas Stone, H. Ahmed · Applied Physics Letters 12 Oct 1998 80
18 Charge injection and trapping in silicon nanocrystals Muhammad Aftab Rafiq, Y. Tsuchiya, Hiroshi Mizuta et al. · Applied Physics Letters 21 Oct 2005 72
19 Improved Off-Current and Subthreshold Slope in Aggressively Scaled Poly-Si TFTs With a Single Grain Boundary in the Channel P. M. Walker, Hiroshi Mizuta, Shigeyasu Uno et al. · IEEE Transactions on Electron Devices Feb 2004 63
20 Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field James W. Robinson, James H. Rice, Kwan Hyi Lee et al. · Applied Physics Letters 13 May 2005 56
21 Machine Learning and Artificial Intelligence in Intensive Care Medicine: Critical Recalibrations from Rule-Based Systems to Frontier Models Pierre Hadweh, Alexandre Niset, Michele Salvagno et al. · Journal of Clinical Medicine Open access 6 Jun 2025 54
22 Complementary spin-Hall and inverse spin-galvanic effect torques in a ferromagnet/semiconductor bilayer T. D. Skinner, K. Olejník, Lucy K. Cunningham et al. · Nature Communications Open access 31 Mar 2015 54
23 Hopping conduction in size-controlled Si nanocrystals Muhammad Aftab Rafiq, Y. Tsuchiya, Hiroshi Mizuta et al. · Journal of Applied Physics Jul 2006 51
24 A silicon Coulomb blockade device with voltage gain Robert Allen Smith, H. Ahmed · Applied Physics Letters 29 Dec 1997 51
25 A memory cell with single-electron and metal-oxide-semiconductor transistor integration Z. A. K. Durrani, Andrew C. Irvine, Haroon Ahmed et al. · Applied Physics Letters Mar 1999 48
26 A useful Mott - Efros - Shklovskii resistivity crossover formulation for three-dimensional films Ralph L. Rosenbaum, Nguyễn Văn Liễn, Mark R. Graham et al. · Journal of Physics Condensed Matter Open access 21 Jul 1997 48
27 The velocity of dislocations in crystals of hcl-doped ice Christopher Shearwood, Robert W. Whitworth · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties 1992 43
28 Response of niobium-based superconducting tunnel junctions in the soft-x-ray region 0.15–6.5 keV P. Verhoeve, N. Rando, J. Verveer et al. · Physical review. B, Condensed matter 1996 42
29 Logic circuit elements using single-electron tunnellingtransistors Nicholas Stone, H. Ahmed · Electronics Letters 14 Oct 1999 38
30 Single-electron effects in heavily doped polycrystalline silicon nanowires Andrew C. Irvine, Z. A. K. Durrani, Haroon Ahmed et al. · Applied Physics Letters 24 Aug 1998 36
31 Resolution limitation due to phonon losses in superconducting tunnel junctions Didier D. E. Martin, P. Verhoeve, Anthony J. Peacock et al. · Applied Physics Letters 20 Mar 2006 32
32 Threshold reduction in pierced microdisk lasers S. A. Backes, J. R. A. Cleaver, Albert P. Heberle et al. · Applied Physics Letters 11 Jan 1999 32
33 Effects of electron-beam exposure on a ruthenium nanocluster polymer Mike D. Thomas, H. Ahmed, K. M. Sanderson et al. · Journal of Applied Physics 15 Jul 2001 32
34 Simulation Study of the Dependence of Submicron Polysilicon Thin-Film Transistor Output Characteristics on Grain Boundary Position P. M. Walker, Shigeyasu Uno, Hiroshi Mizuta · Japanese Journal of Applied Physics Dec 2005 32
35 MOS dosimeters-improvement of responsivity Andrew G. Holmes-Siedle, L. Adams, G. Ensell · . RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems Conference paper 9 Dec 2002 31
36 Inertial displacement of a domain wall excited by ultra-short circularly polarized laser pulses Tomáš Janda, Pierre E. Roy, R. M. Otxoa et al. · Nature Communications Open access 17 May 2017 30
37 Effects of interface states on submicron GaAs metal–semiconductor field-effect transistors assessed by gate leakage current M. Mansoor Ahmed, H. Ahmed, P.H. Ladbrooke · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Jul 1995 30
38 Analysis of multiple-tunnel junctions and their application to bidirectional electron pumps M. B. A. Jalil, H. Ahmed, Μ. Wagner · Journal of Applied Physics 15 Oct 1998 29
39 Nonlinear quantum optical computing via measurement G. D. Hutchinson, Gerard J Milburn · Journal of Modern Optics Open access May 2004 29
40 Radio-frequency point-contact electrometer Hua Qin, D. R. Williams · Applied Physics Letters 15 May 2006 29
41 Charge sensing in intrinsic silicon quantum dots G. J. Podd, S. J. Angus, D. A. Williams et al. · Applied Physics Letters Open access 22 Feb 2010 29
42 Channelling ion image contrast and sputtering in gold specimens observed in a high-resolution scanning ion microscope R. E. Franklin, Eugenie C. Kirk, J. R. A. Cleaver et al. · Journal of Materials Science Letters 1988 29
43 Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O-vapor annealing probed using point-contact devices Toshio Kamiya, Z. A. K. Durrani, H. Ahmed et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena 22 Apr 2003 28
44 The magnetoresistance of sub-micron Fe wires S. J. Blundell, Christopher Shearwood, M. Gester et al. · Journal of Magnetism and Magnetic Materials Jul 1994 28
45 InGaN quantum dots grown by MOVPE via a droplet epitaxy route James H. Rice, Rachel A. Oliver, James W. Robinson et al. · Physica E Low-dimensional Systems and Nanostructures 4 Feb 2004 28
46 Gas-assisted focused ion beam etching for microfabrication and inspection Richard J. Young, J. R. A. Cleaver, H. Ahmed · Microelectronic Engineering Apr 1990 27
47 800V lateral IGBT in bulk Si for low power compact SMPS applications Tatjana G. Trajković, Nishad Udugampola, Vasantha Pathirana et al. Conference paper May 2013 27
48 Fabrication and phonon transport studies in nanometer scale free-standing wires Charles G. Smith, H. Ahmed, Martin N. Wybourne · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena 1987 26
49 Transverse mode-locking in microcavity lasers Reuven Gordon, Albert P. Heberle, J. R. A. Cleaver · Applied Physics Letters 5 Dec 2002 26
50 Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device K. Y. Wang, K. W. Edmonds, Andrew C. Irvine et al. · Applied Physics Letters Open access 27 Dec 2010 25

Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.