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Institution · Canon Anelva (Japan)

Most cited papers from Canon Anelva (Japan)

Canon Anelva (Japan)

What are the most cited papers from Canon Anelva (Japan)?

The most cited paper from Canon Anelva (Japan) is "230% room-temperature magnetoresistance in CoFeB∕MgO∕CoFeB magnetic tunnel junctions" (D. D. Djayaprawira, K. Tsunekawa, Motonobu Nagai et al., 2005), with 974 citations. Next come "Spin-torque diode effect in magnetic tunnel junctions" (833) and "Giant tunnel magnetoresistance in magnetic tunnel junctions with a crystalline MgO(0 0 1) barrier" (644).

Showing 50 of 60 papers. Every paper with more than 28 citations is listed.

Most cited papers, sortable by citations and release date
#Paper
1 230% room-temperature magnetoresistance in CoFeB∕MgO∕CoFeB magnetic tunnel junctions D. D. Djayaprawira, K. Tsunekawa, Motonobu Nagai et al. · Applied Physics Letters 22 Feb 2005 974
2 Spin-torque diode effect in magnetic tunnel junctions Ashwin A. Tulapurkar, Yoshishige Suzuki, Akio Fukushima et al. · Nature Nov 2005 833
3 Giant tunnel magnetoresistance in magnetic tunnel junctions with a crystalline MgO(0 0 1) barrier Shinji Yuasa, D. D. Djayaprawira · Journal of Physics D Applied Physics 19 Oct 2007 644
4 Quantitative measurement of voltage dependence of spin-transfer torque in MgO-based magnetic tunnel junctions Hitoshi Kubota, Akio Fukushima, Kay Yakushiji et al. · Nature Physics 25 Nov 2007 547
5 Bias-driven high-power microwave emission from MgO-based tunnel magnetoresistance devices Alina Maria Deac, Akio Fukushima, Hitoshi Kubota et al. · Nature Physics Open access 10 Aug 2008 456
6 Giant tunneling magnetoresistance effect in low-resistance CoFeB∕MgO(001)∕CoFeB magnetic tunnel junctions for read-head applications K. Tsunekawa, D. D. Djayaprawira, Motonobu Nagai et al. · Applied Physics Letters 5 Aug 2005 219
7 Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities André Chanthbouala, Rie Matsumoto, Julie Grollier et al. · Nature Physics Open access 10 Apr 2011 190
8 Evaluation of Spin-Transfer Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions Hitoshi Kubota, Akio Fukushima, Yuichi Ootani et al. · Japanese Journal of Applied Physics Open access Sep 2005 176
9 Ultralow resistance-area product of 0.4Ω(μm)2 and high magnetoresistance above 50% in CoFeB∕MgO∕CoFeB magnetic tunnel junctions Yoshinori Nagamine, H. Maehara, K. Tsunekawa et al. · Applied Physics Letters 16 Oct 2006 124
10 Vacuum-sealed silicon micromachined pressure sensors Masayoshi Esashi, S. Sugiyama, Kyoichi Ikeda et al. · Proceedings of the IEEE 1998 113
11 Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-$k$ Passivation Layer Hideyuki Hanawa, Hiraku Onodera, Atsushi Nakajima et al. · IEEE Transactions on Electron Devices 31 Jan 2014 96
12 Large Emission Power over 2 µW with HighQFactor Obtained from Nanocontact Magnetic-Tunnel-Junction-Based Spin Torque Oscillator H. Maehara, Hitoshi Kubota, Yoshishige Suzuki et al. · Applied Physics Express Open access Nov 2013 89
13 Sputter Synthesis of Ba2YCu3Oy As-Deposited Superconducting Thin Films from Stoichiometric Target–A Mechanism of Compositional Deviation and Its Control Norio Terada, Hideo Ihara, Masatoshi Jo et al. · Japanese Journal of Applied Physics Open access Apr 1988 88
14 Inelastic tunneling spectroscopy of magnetic tunnel junctions based on CoFeB∕MgO∕CoFeB with Mg insertion layer Guo‐Xing Miao, Krishna B. Chetry, Arunava Gupta et al. · Journal of Applied Physics 15 Apr 2006 77
15 Preparation of Pb(Zr, Ti)O3 Thin Films by Multi-Target Sputtering Takashi Hase, Toshiyuki Sakuma, Yoichi Miyasaka et al. · Japanese Journal of Applied Physics Open access Sep 1993 73
16 Tunnel Magnetoresistance above 170% and Resistance–Area Product of 1 Ω (µm)2Attained byIn situAnnealing of Ultra-Thin MgO Tunnel Barrier H. Maehara, Kazumasa Nishimura, Yoshinori Nagamine et al. · Applied Physics Express 10 Mar 2011 72
17 Transmission electron microscopy study on the polycrystalline CoFeB∕MgO∕CoFeB based magnetic tunnel junction showing a high tunneling magnetoresistance, predicted in single crystal magnetic tunnel junction Youngsok Choi, K. Tsunekawa, Yoshinori Nagamine et al. · Journal of Applied Physics 2007 69
18 High Q factor over 3000 due to out-of-plane precession in nano-contact spin-torque oscillator based on magnetic tunnel junctions H. Maehara, Hitoshi Kubota, Yoshishige Suzuki et al. · Applied Physics Express Open access 10 Jan 2014 67
19 Large Diode Sensitivity of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions Shota Ishibashi, Takeshi Seki, Takayuki Nozaki et al. · Applied Physics Express Open access 18 Jun 2010 65
20 Etching characteristics of magnetic materials (Co, Fe, Ni) using CO/NH3 gas plasma for hardening mask etching N. Matsui, K Mashimo, Akihiro Egami et al. · Vacuum Aug 2002 63
21 Fabrication and characterization of MgO-based magnetic tunnel junctions for spin momentum transfer switching Solomon Assefa, Janusz J. Nowak, J. Z. Sun et al. · Journal of Applied Physics 15 Sep 2007 60
22 New Ultra-High-Frequency Plasma Source for Large-Scale Etching Processes Seiji Samukawa, Yukito Nakagawa, Tsutomu Tsukada et al. · Japanese Journal of Applied Physics Dec 1995 58
23 Frequency-dependent magnetoresistance and magnetocapacitance properties of magnetic tunnel junctions with MgO tunnel barrier Prahallad Padhan, Patrick R. LeClair, Arunava Gupta et al. · Applied Physics Letters 2 Apr 2007 56
24 Dependence of electrical conductivity of nanocrystalline silicon on structural properties and the effect of substrate bias Mitsuharu Konuma, H. Curtins, F.-A. Sarott et al. · Philosophical Magazine B Mar 1987 50
25 Effect of Ta getter on the quality of MgO tunnel barrier in the polycrystalline CoFeB∕MgO∕CoFeB magnetic tunnel junction Youngsok Choi, Yoshinori Nagamine, K. Tsunekawa et al. · Applied Physics Letters 2007 49
26 Selective epitaxial growth by UHV-CVD using Si2H6 and Cl2 Toru Tatsumi, Ken-ichi Aketagawa, Masayuki Hiroi et al. · Journal of Crystal Growth May 1992 49
27 Crystallization of Amorphous CoFeB Ferromagnetic Layers in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions Takashi Takeuchi, K. Tsunekawa, Young-suk Choi et al. · Japanese Journal of Applied Physics Open access 22 Jun 2007 49
28 In Situ IR Spectroscopic Study of a-Si:H Films Growing under Photo-Chemical Vapor Deposition Condition Toshimasa Wadayama, WATARU SUETAKA, Atsushi Sekiguchi · Japanese Journal of Applied Physics Open access Apr 1988 49
29 A Simple Approach to Fabrication of High-Quality HfSiON Gate Dielectrics With Improved nMOSFET Performances Xinchen Wang, Juan Liu, Feng Jun Zhu et al. · IEEE Transactions on Electron Devices 26 Oct 2004 46
30 Epitaxial Growth of Al on Si by Gas-Temperature-Controlled Chemical Vapor Deposition Tsukasa Kobayashi, Atsushi Sekiguchi, Naokichi Hosokawa et al. · Japanese Journal of Applied Physics Open access Sep 1988 45
31 Dependence of spin-transfer switching current on free layer thickness in Co–Fe–B∕MgO∕Co–Fe–B magnetic tunnel junctions Hitoshi Kubota, Akio Fukushima, Yuichi Ootani et al. · Applied Physics Letters 17 Jul 2006 45
32 End-point determination of aluminum reactive ion etching by discharge impedance monitoring Katsumi Ukai, Kunio Hanazawa · Journal of Vacuum Science and Technology Mar 1979 45
33 High domain wall velocities via spin transfer torque using vertical current injection Peter J. Metaxas, J. Sampaio, André Chanthbouala et al. · Scientific Reports Open access 14 May 2013 44
34 Tunneling spectra of sputter-deposited CoFeB/MgO/CoFeB magnetic tunnel junctions showing giant tunneling magnetoresistance effect Rie Matsumoto, Yusuke Hamada, Masaki Mizuguchi et al. · Solid State Communications 14 Oct 2005 42
35 Real-time monitoring of scattered laser light by a single particle of several tens of nanometers in the etching chamber in relation to its status with the equipment Fumihiko Uesugi, Natsuko Ito, Tsuyoshi Moriya et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films May 1998 41
36 Enhanced performance in sub-100 nm CMOSFETs using strained epitaxial silicon-germanium Yee‐Chia Yeo, Qiang Lu, Tsu‐Jae King et al. Conference paper 11 Nov 2002 39
37 Low-temperature, uniform, and high-density plasma produced by a new ultra-high-frequency discharge with a spokewise antenna Seiji Samukawa, Yukito Nakagawa, Tsutomu Tsukada et al. · Applied Physics Letters 4 Sep 1995 39
38 Spin-transfer-torque-induced rf oscillations in CoFeB/MgO/CoFeB magnetic tunnel junctions under a perpendicular magnetic field Takahiro Wada, Takuya Yamane, Takeshi Seki et al. · Physical Review B 15 Mar 2010 39
39 Perpendicular Magnetic Tunnel Junctions With Low Resistance-Area Product: High Output Voltage and Bias Dependence of Magnetoresistance N. Tezuka, S. Oikawa, Izumo Abe et al. · IEEE Magnetics Letters 2016 37
40 In situ analyses on negative ions in the sputtering process to deposit Al-doped ZnO films Naoki Tsukamoto, Daisuke Watanabe, Motoaki Saito et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 29 Jun 2010 37
41 High rate deposition of a-Si:H and a-SiNx:H by VHF PECVD Toshiyuki Takagi, Kazushige Takechi, Yukito Nakagawa et al. · Vacuum Dec 1998 35
42 Simultaneous measurements and determinations of stable carbon and nitrogen isotope ratios, and organic carbon and nitrogen contents in biological samples by coupling of a small quadrupole mass spectrometer and modified carbon-nitrogen elemental analyzer Akira Otsuki, Yoichi INO, Toshihiro Fujii · International Journal of Mass Spectrometry and Ion Physics 1983 35
43 Microfabrication of Magnetic Tunnel Junctions Using CH$_{3}$OH Etching Y. Otani, Hitoshi Kubota, Akio Fukushima et al. · IEEE Transactions on Magnetics Jun 2007 34
44 Electrical properties of amorphous high-/spl kappa/ HfTaTiO gate dielectric with dielectric constants of 40-60 N. Lu, H.-J. Li, Mark Gardner et al. · IEEE Electron Device Letters May 2005 34
45 Molecular dynamics simulation of the formation of s p 3 hybridized bonds in hydrogenated diamondlike carbon deposition processes Yasuo Murakami, Seishi Horiguchi, Satoshi Hamaguchi · Physical Review E Open access 5 Apr 2010 34
46 Extremely high-selective electron cyclotron resonance plasma etching for phosphorus-doped polycrystalline silicon Seiji Samukawa, Yasuhíro Suzuki, Masami Sasaki · Applied Physics Letters 23 Jul 1990 33
47 Three-Layer laminated metal gate electrodes with tunable work functions for CMOS applications Weiping Bai, Sang Ho Bae, H.C. Wen et al. · IEEE Electron Device Letters 21 Mar 2005 32
48 Wide dynamic range silicon diaphragm vacuum sensor by electrostatic servo system Haruzo Miyashita, Masayoshi Esashi · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Nov 2000 32
49 Observation of the trajectories of particles in process equipment by an in situ monitoring system using a laser light scattering method Natsuko Ito, Tsuyoshi Moriya, Fumihiko Uesugi et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Nov 1998 31
50 Development of the Cat-CVD apparatus and its feasibility for mass production Keiji Ishibashi · Thin Solid Films Sep 2001 31

Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.