Institution · Cree (China)
Most cited papers from Cree (China)
What are the most cited papers from Cree (China)?
The most cited paper from Cree (China) is "A New Degradation Mechanism in High-Voltage SiC Power MOSFETs" (Anant K. Agarwal, Fatima Husna, Sarah Kay Haney et al., 2007), with 301 citations. Next come "Cancer risk across mammals" (258) and "Single-Stage, Universal-Input AC/DC LED Driver With Current-Controlled Variable PFC Boost Inductor" (200).
Showing 50 of 60 papers. Every paper with more than 45 citations is listed.
| # | Paper | ||
|---|---|---|---|
| 1 | A New Degradation Mechanism in High-Voltage SiC Power MOSFETs Anant K. Agarwal, Fatima Husna, Sarah Kay Haney et al. · IEEE Electron Device Letters | 28 Jun 2007 | 301 |
| 2 | Cancer risk across mammals Orsolya Vincze, Fernando Colchero, Jean-François Lemaître et al. · Nature | 22 Dec 2021 | 258 |
| 3 | Single-Stage, Universal-Input AC/DC LED Driver With Current-Controlled Variable PFC Boost Inductor Yuequan Hu, László Huber, M.M. Jovanovic · IEEE Transactions on Power Electronics | 5 Oct 2010 | 200 |
| 4 | Degradation of steel-to-concrete bond due to corrosion Cheng Bao Jiang, Yu‐Fei Wu, Ming-Jiang Dai · Construction and Building Materials | 12 Oct 2017 | 194 |
| 5 | Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC John Rozen, Sarit Dhar, M. E. Zvanut et al. · Journal of Applied Physics | 15 Jun 2009 | 186 |
| 6 | N2O Processing Improves the 4H-SiC:SiO2 Interface Lori A. Lipkin, Mrinal K. Das, John W. Palmour · Materials science forum | Apr 2002 | 179 |
| 7 | Silicon carbide power device development for industrial markets John W. Palmour | Dec 2014 | 171 |
| 8 | 27 kV, 20 A 4H-SiC n-IGBTs Edward V. Brunt, Lin Cheng, Michael J. O’Loughlin et al. · Materials science forum | 30 Jun 2015 | 145 |
| 9 | High efficiency GaN-based LEDs and lasers on SiC John A. Edmond, Amber C. Abare, Mike Bergman et al. · Journal of Crystal Growth | Dec 2004 | 141 |
| 10 | Mechanical property and thermal degradation mechanism of granite in thermal-mechanical coupled triaxial compression Hongyuan Zhou, Zaobao Liu, Wanqing Shen et al. · International Journal of Rock Mechanics and Mining Sciences | 17 Nov 2022 | 122 |
| 11 | Covered Semi-Top-Down Excavation of Subway Station Surrounded by Closely Spaced Buildings in Downtown Shanghai: Building Response Yong Cheng Tan, Runqiu Huang, Zhijun Kang et al. · Journal of Performance of Constructed Facilities | 18 Apr 2016 | 107 |
| 12 | Effects of confining pressure on acoustic emission and failure characteristics of sandstone Zhen Huang, Qixiong Gu, Yufan Wu et al. · International Journal of Mining Science and Technology | 30 Aug 2021 | 106 |
| 13 | Characterization of semi-top-down excavation for subway station in Shanghai soft ground Yong Cheng Tan, Hehua Zhu, Fang‐Le Peng et al. · Tunnelling and Underground Space Technology | 11 Jun 2017 | 99 |
| 14 | Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers Brett Hull, Joseph J. Sumakeris, Michael J. O’Loughlin et al. · IEEE Transactions on Electron Devices | Aug 2008 | 93 |
| 15 | Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices Joseph J. Sumakeris, Peder Bergman, Mrinal K. Das et al. · Materials science forum | 15 Oct 2006 | 93 |
| 16 | Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications H. McD. Hobgood, Michael F. Brady, W.H. Brixius et al. · Materials science forum | 10 May 2000 | 88 |
| 17 | Crucial roles of circulating tumor cells in the metastatic cascade and tumor immune escape: biology and clinical translation Klaus Pantel, Catherine Alix‐Panabières · Journal for ImmunoTherapy of Cancer | Dec 2022 | 83 |
| 18 | Comparison of Static and Switching Characteristics of 1200 V 4H-SiC BJT and 1200 V Si-IGBT Yan Hong Gao, Alex Q. Huang, Sumi Krishnaswami et al. · IEEE Transactions on Industry Applications | 2008 | 82 |
| 19 | Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface John Rozen, Sarit Dhar, Sriram K. Dixit et al. · Journal of Applied Physics | 15 Jun 2008 | 78 |
| 20 | Assessing the Impact of SiC MOSFETs on Converter Interfaces for Distributed Energy Resources Joseph Carr, Daniel Hotz, Juan Carlos Balda et al. · IEEE Transactions on Power Electronics | 2009 | 77 |
| 21 | Recent Advances in (0001) 4H-SiC MOS Device Technology Mrinal K. Das · Materials science forum | 15 Jun 2004 | 76 |
| 22 | High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method Jason R. Jenny, St.G. Müller, Adrian Powell et al. · Journal of Electronic Materials | May 2002 | 76 |
| 23 | Bulk Growth of Large Area SiC Crystals Adrian R. Powell, Joseph J. Sumakeris, Yuri I. Khlebnikov et al. · Materials science forum | 24 May 2016 | 75 |
| 24 | The influence of pipe-jacking tunneling on deformation of existing tunnels in soft soils and the effectiveness of protection measures Haijie He, Shifang Wang, Wenming Shen et al. · Transportation Geotechnics | 11 Jul 2023 | 73 |
| 25 | Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances Sokrates T. Pantelides et al. · Materials science forum | 15 Oct 2006 | 72 |
| 26 | Strain determination in heteroepitaxial GaN Brian J. Skromme, He Zhao, D. Wang et al. · Applied Physics Letters | 11 Aug 1997 | 72 |
| 27 | Investigation of the hydraulic properties of deep fractured rocks around underground excavations using high-pressure injection tests Zhen Huang, Xiaozhao Li, Shijie Li et al. · Engineering Geology | Sep 2018 | 70 |
| 28 | Using turbidity dynamics and geochemical variability as a tool for understanding the behavior and vulnerability of a karst aquifer Matthieu Fournier, Nicolas Masséi, Michel Bakalowicz et al. · Hydrogeology Journal | 20 Nov 2006 | 70 |
| 29 | Matrix metalloproteinase-9 is increased and correlates with severity in Guillain-Barre syndrome Alain Créange, Tarek Sharshar, Thierry Planchenault et al. · Neurology | Nov 1999 | 69 |
| 30 | SiC MOSFET gate drive design considerations Julius Rice, John Mookken | May 2015 | 64 |
| 31 | Anomalously High Density of Interface States Near the Conduction Band in SiO2/4H-SiC MOS Devices Mrinal K. Das, Benjamin S. Um, James A. Cooper · Materials science forum | 10 May 2000 | 63 |
| 32 | Experimental and Theoretical Analysis of the High Temperature Thermal Conductivity of Monocrystalline SiC Stephan G. Müller, Robert Eckstein, Jochen Fricke et al. · Materials science forum | Feb 1998 | 63 |
| 33 | Roadmap for megawatt class power switch modules utilizing large area silicon carbide MOSFETs and JBS diodes Jim Richmond, Scott G. Leslie, Brett A. Hull et al. | Sep 2009 | 61 |
| 34 | Sublimation-Grown Semi-Insulating SiC for High Frequency Devices Stephan G. Müller, Michael F. Brady, W.H. Brixius et al. · Materials science forum | 15 Sep 2003 | 59 |
| 35 | Unsteady seepage solutions for hydraulic fracturing around vertical wellbores in hydrocarbon reservoirs Yun Wu, Zhen Huang, Kui Zhao et al. · International Journal of Hydrogen Energy | 18 Feb 2020 | 58 |
| 36 | Design and Characterization of High-Voltage 4H-SiC p-IGBTs Qingchun Zhang, Alex Q. Huang, Jun Wang et al. · IEEE Transactions on Electron Devices | Aug 2008 | 58 |
| 37 | Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout Daniel J. Lichtenwalner, Akin Akturk, James M. McGarrity et al. · Materials science forum | 5 Jun 2018 | 57 |
| 38 | High-purity semi-insulating 4H-SiC for microwave device applications Jason R. Jenny, D.P. Malta, St.G. Müller et al. · Journal of Electronic Materials | May 2003 | 56 |
| 39 | Preparedness of Belgian civil hospitals for chemical, biological, radiation, and nuclear incidents Luc J. M. Mortelmans, Sam Van Boxstael, Harald G. De Cauwer et al. · European Journal of Emergency Medicine | 24 Aug 2013 | 56 |
| 40 | Modeling and simulation of a traction control algorithm for an electric vehicle with four separate wheel drives R. Pusca, Y. Ait-Amirat, A. Berthon et al. | 25 Jun 2003 | 55 |
| 41 | 6.2KV 4H-SiC pin Diode with Low Forward Voltage Drop Yoshitaka Sugawara, Katsunori Asano, Ranbir Singh et al. · Materials science forum | 10 May 2000 | 55 |
| 42 | 100 mm 4HN-SiC Wafers with Zero Micropipe Density R.T. Leonard, Yuri I. Khlebnikov, Adrian R. Powell et al. · Materials science forum | 26 Sep 2008 | 55 |
| 43 | A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching Mrinal K. Das, Q. Jon Zhang, Robert Callanan et al. · Materials science forum | 26 Sep 2008 | 55 |
| 44 | Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy Robert E. Stahlbush, Kendrick X. Liu, Q. Zhang et al. · Materials science forum | 15 Sep 2007 | 55 |
| 45 | Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices Jason R. Jenny, D.P. Malta, M.R. Calus et al. · Materials science forum | 15 Jun 2004 | 54 |
| 46 | Broad-area photoelectrochemical etching of GaN Chris Youtsey, I. Adesida, Gary E. Bulman · Electronics Letters | 30 Jan 1997 | 53 |
| 47 | Development of 15 kV 4H-SiC IGBTs Sei‐Hyung Ryu, Lin Cheng, Sarit Dhar et al. · Materials science forum | 14 May 2012 | 53 |
| 48 | Recent Advances in SiC Power Devices James A. Cooper, M. R. Melloch, Jerry M. Woodall et al. · Materials science forum | Feb 1998 | 52 |
| 49 | Quantitative Interpretation of Specific Conductance Frequency Distributions in Karst Nicolas Masséi, Barbara June Mahler, Michel Bakalowicz et al. · Ground Water | 12 Mar 2007 | 50 |
| 50 | Ultrashallow defect states at SiO2∕4H–SiC interfaces Sarit Dhar, X. D. Chen, P. M. Mooney et al. · Applied Physics Letters | 10 Mar 2008 | 50 |
Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.