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Most cited papers from Everspin Technologies (United States)

What are the most cited papers from Everspin Technologies (United States)?

The most cited paper from Everspin Technologies (United States) is "Magnetoresistive Random Access Memory" (Dmytro Apalkov, B. Diény, Jon M. Slaughter, 2016), with 556 citations. Next come "Direct observation of a propagating spin wave induced by spin-transfer torque" (396) and "Magnetoresistive Random Access Memory: Present and Future" (267).

Showing 50 of 88 papers. Every paper is listed.

Most cited papers, sortable by citations and release date
#Paper
1 Magnetoresistive Random Access Memory Dmytro Apalkov, B. Diény, Jon M. Slaughter · Proceedings of the IEEE 29 Aug 2016 556
2 Direct observation of a propagating spin wave induced by spin-transfer torque M. Madami, Stefano Bonetti, Giancarlo Consolo et al. · Nature Nanotechnology 28 Aug 2011 396
3 Magnetoresistive Random Access Memory: Present and Future S. Ikegawa, F. B. Mancoff, Jason Janesky et al. · IEEE Transactions on Electron Devices 30 Jan 2020 267
4 Towards Low-Power High-Efficiency RF and Microwave Energy Harvesting Simon Hemour, Yangping Zhao, Carlos H. P. Lorenz et al. · IEEE Transactions on Microwave Theory and Techniques Open access 19 Feb 2014 243
5 Experimental Evidence of Self-Localized and Propagating Spin Wave Modes in Obliquely Magnetized Current-Driven Nanocontacts Stefano Bonetti, Vasil Tiberkevich, Giancarlo Consolo et al. · Physical Review Letters Open access 17 Nov 2010 194
6 Spin torque oscillator frequency versus magnetic field angle: The prospect of operation beyond 65 GHz Stefano Bonetti, P. K. Muduli, Fred Mancoff et al. · Applied Physics Letters 9 Mar 2009 187
7 The growing memristor industry Mario Lanza, Sebastian Matias Pazos, Fernando Leonel Aguirre et al. · Nature 16 Apr 2025 176
8 A Fully Functional 64 Mb DDR3 ST-MRAM Built on 90 nm CMOS Technology Nicholas D. Rizzo, D. Houssameddine, Jason Janesky et al. · IEEE Transactions on Magnetics Jul 2013 142
9 Power Delivery Design for 3-D ICs Using Different Through-Silicon Via (TSV) Technologies Nauman H. Khan, Syed M. Alam, Soha Hassoun · IEEE Transactions on Very Large Scale Integration (VLSI) Systems 12 Mar 2010 119
10 Nonlinear frequency and amplitude modulation of a nanocontact-based spin-torque oscillator P. K. Muduli, Ye. Pogoryelov, Stefano Bonetti et al. · Physical Review B Open access 28 Apr 2010 102
11 Materials for Magnetoresistive Random Access Memory Jon M. Slaughter · Annual Review of Materials Research Review 6 Jul 2009 93
12 Demonstration of a Reliable 1 Gb Standalone Spin-Transfer Torque MRAM For Industrial Applications S. Aggarwal, H. Almasi, Mark DeHerrera et al. Conference paper Dec 2019 87
13 Electrical modeling and characterization of through-silicon vias (TSVs) for 3-D integrated circuits Ioannis Savidis, Syed M. Alam, Ankur Jain et al. · Microelectronics Journal 30 Dec 2009 82
14 System-level comparison of power delivery design for 2D and 3D ICs Nauman H. Khan, Syed M. Alam, Soha Hassoun Conference paper Sep 2009 60
15 Through-Silicon Via (TSV)-induced noise characterization and noise mitigation using coaxial TSVs Nauman H. Khan, Syed M. Alam, Soha Hassoun Conference paper Sep 2009 53
16 Low Power Magnetic Quantum Cellular Automata Realization Using Magnetic Multi-Layer Structures Jayita Das, Syed M. Alam, Sanjukta Bhanja · IEEE Journal on Emerging and Selected Topics in Circuits and Systems 31 Aug 2011 51
17 CMOS-embedded STT-MRAM arrays in 2x nm nodes for GP-MCU applications D. Shum et al. Conference paper Jun 2017 50
18 Seebeck Rectification Enabled by Intrinsic Thermoelectrical Coupling in Magnetic Tunneling Junctions Z. H. Zhang, Y. S. Gui, Lei Fu et al. · Physical Review Letters Open access 18 Jul 2012 49
19 Frequency modulation of spin torque oscillator pairs Ye. Pogoryelov, P. K. Muduli, S. Bonetti et al. · Applied Physics Letters Open access 9 May 2011 43
20 Spin-torque oscillator linewidth narrowing under current modulation Ye. Pogoryelov, P. K. Muduli, S. Bonetti et al. · Applied Physics Letters Open access 9 May 2011 43
21 Binding event measurement using a chip calorimeter coupled to magnetic beads L.M. Ahmad, Bruce C. Towe, Antje Wolf et al. · Sensors and Actuators B Chemical 17 Dec 2009 42
22 Spin Torque Oscillators and RF Currents—Modulation, Locking, and Ringing P. K. Muduli, Ye. Pogoryelov, Yan Zhou et al. · Integrated ferroelectrics 2011 42
23 Ultra-Low Power Hybrid CMOS-Magnetic Logic Architecture Jayita Das, Syed M. Alam, Sanjukta Bhanja · IEEE Transactions on Circuits and Systems I Regular Papers 24 Aug 2012 39
24 High density ST-MRAM technology (Invited) Jon M. Slaughter, Nicholas D. Rizzo, Jason Janesky et al. Conference paper Dec 2012 38
25 Technology for reliable spin-torque MRAM products Jon M. Slaughter et al. Conference paper Dec 2016 36
26 Modulation of Individual and Mutually Synchronized Nanocontact-Based Spin Torque Oscillators P. K. Muduli, Ye. Pogoryelov, F. B. Mancoff et al. · IEEE Transactions on Magnetics 25 May 2011 34
27 High-Speed (400MB/s) and Low-BER STT-MRAM Technology for Industrial Applications S. Ikegawa, Kerry J. Nagel, F. B. Mancoff et al. · 2022 International Electron Devices Meeting (IEDM) Conference paper 3 Dec 2022 26
28 Observation of thermal spin-transfer torque via ferromagnetic resonance in magnetic tunnel junctions Zhaohui Zhang, Lihui Bai, Xiaobin Chen et al. · Physical review. B./Physical review. B 11 Aug 2016 25
29 Adiabatic/MTJ-Based Physically Unclonable Function for Consumer Electronics Security Zachary Kahleifeh, Himanshu Thapliyal, Syed M. Alam · IEEE Transactions on Consumer Electronics 24 Aug 2022 24
30 Heat-driven spin transport in a ferromagnetic metal Yadong Xu, Bowen Yang, Chi Tang et al. · Applied Physics Letters Open access 15 Dec 2014 24
31 Thermal–electrical co-optimisation of floorplanning of three-dimensional integrated circuits under manufacturing and physical design constraints Ankur Jain, Syed Munawar Alam, Scott Pozder et al. · IET Computers & Digital Techniques 9 May 2011 21
32 Interstratum Connection Design Considerations for Cost-Effective 3-D System Integration Syed M. Alam, Robert Emmet Jones, Scott Pozder et al. · IEEE Transactions on Very Large Scale Integration (VLSI) Systems 19 Feb 2009 20
33 Commercialization of MRAM – Historical and Future Perspective S. Ikegawa, F. B. Mancoff, S. Aggarwal Conference paper 6 Jul 2021 19
34 Heavy-Ion-Induced Displacement Damage Effects in Magnetic Tunnel Junctions With Perpendicular Anisotropy T. Patrick Xiao, Christopher H. Bennett, F. B. Mancoff et al. · IEEE Transactions on Nuclear Science Open access 9 Feb 2021 19
35 Mitigating TSV-induced substrate noise in 3-D ICs using GND plugs Nauman H. Khan, Syed M. Alam, Soha Hassoun Conference paper Mar 2011 19
36 Microwave reflection imaging using a magnetic tunnel junction based spintronic microwave sensor Lei Fu, Zhong Cao, Simon Hemour et al. · Applied Physics Letters 3 Dec 2012 19
37 Impact of External Magnetic Fields on STT-MRAM: An Application Note B. Diény, S. Aggarwal, V. B. Naik et al. · IEEE Electron Devices Magazine Open access Sep 2024 18
38 Influence of Total Ionizing Dose on Magnetic Tunnel Junctions With Perpendicular Anisotropy Brandon R. Zink, Jean Yang-Scharlotta, F. B. Mancoff et al. · IEEE Transactions on Nuclear Science 21 Dec 2020 18
39 A 180 Kbit Embeddable MRAM Memory Module Joseph J. Nahas, Thomas W. Andre, B.J. Garni et al. · IEEE Journal of Solid-State Circuits Aug 2008 18
40 Die/wafer stacking with reciprocal design symmetry (RDS) for mask reuse in three-dimensional (3D) integration technology Syed M. Alam, Robert Emmet Jones, Scott Pozder et al. Conference paper Mar 2009 17
41 ST-MRAM fundamentals, challenges, and applications Tom Andre, Syed Munawar Alam, Dietmar Gogl et al. Conference paper Sep 2013 17
42 Commercialization of 1Gb Standalone Spin-Transfer Torque MRAM J. J. Sun, Mark DeHerrera, Brian P. Hughes et al. Conference paper May 2021 16
43 High sensitivity microwave detection using a magnetic tunnel junction in the absence of an external applied magnetic field Y. S. Gui, Y. Xiao, L. H. Bai et al. · Applied Physics Letters Open access 13 Apr 2015 15
44 Spin transfer torque switching of magnetic tunnel junctions using a conductive atomic force microscope Eric R. Evarts, Limin Cao, David S. Ricketts et al. · Applied Physics Letters Open access 28 Sep 2009 15
45 Sequential Frame Synchronization Based on Hypothesis Testing With Unknown Channel State Information Yingsi Liang, Dinesh Rajan, Oren Eytan Eliezer · IEEE Transactions on Communications 2 Jun 2015 14
46 Hardware Error Likelihood Induced by the Operation of Software Bing Hua Huang, Manuel Rodriguez, Ming Li et al. · IEEE Transactions on Reliability 26 Jul 2011 12
47 Device performance in a fully functional 800MHz DDR3 spin torque magnetic random access memory Jason Janesky, Nicholas D. Rizzo, D. Houssameddine et al. Conference paper May 2013 12
48 GND Plugs: A Superior Technology to Mitigate TSV-Induced Substrate Noise Nauman H. Khan, Syed M. Alam, Soha Hassoun · IEEE Transactions on Components Packaging and Manufacturing Technology 26 Mar 2013 11
49 Persistent xSPI STT-MRAM with up to 400MB/s Read and Write Throughput Syed Munawar Alam et al. Conference paper May 2022 10
50 Nano Magnetic STT-Logic Partitioning for Optimum Performance Jayita Das, Syed M. Alam, Sanjukta Bhanja · IEEE Transactions on Very Large Scale Integration (VLSI) Systems 13 Jun 2013 9

Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.