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Institution · GlobalFoundries (Germany)

Most cited papers from GlobalFoundries (Germany)

GlobalFoundries (Germany)

What are the most cited papers from GlobalFoundries (Germany)?

The most cited paper from GlobalFoundries (Germany) is "A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond" (Stefan Dünkel et al., 2017), with 542 citations. Next come "Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories" (506) and "A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs" (411).

Showing 50 of 60 papers. Every paper with more than 45 citations is listed.

Most cited papers, sortable by citations and release date
#Paper
1 A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond Stefan Dünkel et al. Conference paper Dec 2017 542
2 Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories Johannes Müller et al. Conference paper Dec 2013 506
3 A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs Martin Trentzsch, Stefan Flachowsky, Ralf P. Richter et al. Conference paper Dec 2016 411
4 Ferroelectric ternary content-addressable memory for one-shot learning Kai Ni, Xunzhao Yin, Ann Franchesca Laguna et al. · Nature Electronics 18 Nov 2019 388
5 Charge-Trapping Phenomena in HfO 2 -Based FeFET-Type Nonvolatile Memories Ekaterina Yurchuk, Johannes Müller, Stefan Müller et al. · IEEE Transactions on Electron Devices 22 Jul 2016 370
6 Extreme ultraviolet resist materials for sub-7 nm patterning Li Li, Xuan Liu, Shyam Chand Pal et al. · Chemical Society Reviews Review 2017 347
7 Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors Halid Mulaosmanovic, Johannes Ocker, Stefan Müller et al. · ACS Applied Materials & Interfaces 10 Jan 2017 343
8 Ferroelectric field-effect transistors based on HfO 2 : a review Halid Mulaosmanovic, Evelyn T. Breyer, Stefan Dünkel et al. · Nanotechnology 28 Jul 2021 332
9 22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications R. Carter et al. Conference paperOpen access Dec 2016 300
10 Plasma processing of low-k dielectrics Mikhaı̈l R. Baklanov, Jean‐François de Marneffe, Denis Shamiryan et al. · Journal of Applied Physics 22 Jan 2013 294
11 Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG Johannes Müller, Ekaterina Yurchuk, Till Schlosser et al. Conference paper Jun 2012 291
12 Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors Ekaterina Yurchuk, Johannes Müller, Jan Paul et al. · IEEE Transactions on Electron Devices 17 Sep 2014 163
13 Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells Halid Mulaosmanovic, Stefan Slesazeck, Johannes Ocker et al. Conference paper Dec 2015 151
14 FeFET: A versatile CMOS compatible device with game-changing potential Sven Beyer et al. Conference paper May 2020 150
15 Development of new 2.5D package with novel integrated organic interposer substrate with ultra-fine wiring and high density bumps Kiyoshi Oi, Satoshi Otake, Noriyoshi Shimizu et al. Conference paper May 2014 148
16 From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices Stefan Mueller, Johannes Müller, Raik Hoffmann et al. · IEEE Transactions on Electron Devices 7 Oct 2013 145
17 A 22nm FDSOI Technology Optimized for RF/mmWave Applications Shao-er Ong et al. Conference paper Jun 2018 144
18 Micro-Transfer Printing for Heterogeneous Si Photonic Integrated Circuits Günther Roelkens et al. · IEEE Journal of Selected Topics in Quantum Electronics Open access 16 Nov 2022 127
19 Hafnium Oxide Based CMOS Compatible Ferroelectric Materials Uwe Paul Schroeder, Stefan Mueller, Jenna L. Mueller et al. · ECS Journal of Solid State Science and Technology 2013 125
20 Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories Ekaterina Yurchuk, Stefan Mueller, Dominik Martin et al. Conference paper Jun 2014 116
21 Cryogenic Characterization of 22nm FDSOI CMOS Technology for Quantum Computing ICs Shai Bonen, Utku Alakuşu, Yifeng Duan et al. · IEEE Electron Device Letters 2018 114
22 Micro-Raman spectroscopy and analysis of near-surface stresses in silicon around through-silicon vias for three-dimensional interconnects Suk-Kyu Ryu, Qiu Zhao, Michael Thomas Hecker et al. · Journal of Applied Physics 15 Mar 2012 112
23 High endurance strategies for hafnium oxide based ferroelectric field effect transistor Johannes Müller, Patrick Polakowski, Stefan Müller et al. Conference paperOpen access Oct 2016 101
24 A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI Kwangyou Seo et al. Conference paper Jun 2014 100
25 Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array Dayane Alfenas Reis, Suman Datta, Michael Thaddeus Niemier et al. · IEEE Journal on Exploratory Solid-State Computational Devices and Circuits Open access 22 Jul 2019 80
26 Demonstration of a p-Type Ferroelectric FET With Immediate Read-After-Write Capability Dominik Martin Kleimaier, Halid Mulaosmanovic, Stefan Dünkel et al. · IEEE Electron Device Letters 6 Oct 2021 78
27 Sub-Nanosecond Switching of Si:HfO 2 Ferroelectric Field-Effect Transistor Mor Mordechai Dahan, Halid Mulaosmanovic, Or Levit et al. · Nano Letters 10 Feb 2023 75
28 Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free read Halid Mulaosmanovic, Dominik Martin Kleimaier, Stefan Dünkel et al. · Nanoscale 2021 74
29 Modified Tauc–Lorentz dispersion model leading to a more accurate representation of absorption features below the bandgap Dmitriy V. Likhachev, Natalia Malkova, Leonid Poslavsky · Thin Solid Films 21 Jul 2015 73
30 Impact of Read Operation on the Performance of HfO2-Based Ferroelectric FETs Halid Mulaosmanovic, Stefan Dünkel, Johannes Müller et al. · IEEE Electron Device Letters 6 Jul 2020 72
31 Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction Maximilian Lederer, Thomas Kämpfe, Norman Vogel et al. · Nanomaterials Open access 22 Feb 2020 72
32 Manufacturable 22nm FD-SOI Embedded MRAM Technology for Industrial-grade MCU and IOT Applications V. B. Naik et al. Conference paper Dec 2019 72
33 Understanding Strain-Induced Drive-Current Enhancement in Strained-Silicon n-MOSFET and p-MOSFET Stefan Flachowsky, Andy Wei, Ralf Illgen et al. · IEEE Transactions on Electron Devices 28 Apr 2010 71
34 Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors Thomas Mikolajick, Stefan Müller, Tony Schenk et al. · Advances in science and technology Conference paper 31 Oct 2014 71
35 Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications Bruna Cardoso Paz, M. Cassé, Christoforos G. Theodorou et al. · IEEE Transactions on Electron Devices Open access 21 Sep 2020 66
36 A holistic metrology approach: hybrid metrology utilizing scatterometry, CD-AFM, and CD-SEM Alok Vaid, Bin Bin Yan, Yun Tao Jiang et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Conference paper 17 Mar 2011 66
37 FINFET technology featuring high mobility SiGe channel for 10nm and beyond Dechao Guo et al. Conference paper Jun 2016 65
38 Unraveling the Dynamics of Charge Trapping and De-Trapping in Ferroelectric FETs Shan Zhi Deng, Zijian Zhao, You Sung Kim et al. · IEEE Transactions on Electron Devices 28 Jan 2022 63
39 Demonstration of Multiply-Accumulate Operation With 28 nm FeFET Crossbar Array Sourav De, Franz Müller, Nellie Laleni et al. · IEEE Electron Device Letters Open access 3 Nov 2022 60
40 A 0.063 µm2 FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch V. Basker et al. Conference paper Jun 2010 60
41 Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping Wenke Weinreich, Lutz Wilde, Johannes Müller et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 7 Nov 2012 57
42 Tunable Non-Volatile Gate-to-Source/Drain Capacitance of FeFET for Capacitive Synapse Tae‐Hyeon Kim, Omkar Phadke, Yuan-Chun Luo et al. · IEEE Electron Device Letters Sep 2023 56
43 Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor Maik Simon, Halid Mulaosmanovic, V. Sessi et al. · Nature Communications Open access 17 Nov 2022 56
44 Compact FeFET Circuit Building Blocks for Fast and Efficient Nonvolatile Logic-in-Memory Evelyn T. Breyer, Halid Mulaosmanovic, Jens Trommer et al. · IEEE Journal of the Electron Devices Society Open access 2020 56
45 Strain relaxation in single crystal SrTiO3 grown on Si (001) by molecular beam epitaxy Miri Choi, Agham B. Posadas, Rytis Dargis et al. · Journal of Applied Physics 15 Mar 2012 56
46 Cobalt advanced barrier metallization: A resistivity composition analysis Marcus Wislicenus, Romy Liske, Lukas Gerlich et al. · Microelectronic Engineering 5 Oct 2014 55
47 Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2 Dominik Martin, Ekaterina Yurchuk, Stefan Müller et al. · Solid-State Electronics 4 May 2013 55
48 READ-Optimized 28nm HKMG Multibit FeFET Synapses for Inference-Engine Applications Sourav De, Franz Müller, Hoang‐Hiep Le et al. · IEEE Journal of the Electron Devices Society Open access 2022 54
49 Introducing a Unified PCA Algorithm for Model Size Reduction Richard P. Good, Daniel Kost, Gregory A. Cherry · IEEE Transactions on Semiconductor Manufacturing May 2010 54
50 28 nm HKMG-Based Current Limited FeFET Crossbar-Array for Inference Application Sourav De, Franz Müller, Sunanda Thunder et al. · IEEE Transactions on Electron Devices Open access 4 Nov 2022 52

Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.