Science Explorer Back to mapMap
Discussion
Institution · GlobalFoundries (United States)

Most cited papers from GlobalFoundries (United States)

GlobalFoundries (United States)

What are the most cited papers from GlobalFoundries (United States)?

The most cited paper from GlobalFoundries (United States) is "Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET" (N. Loubet et al., 2017), with 1,052 citations. Next come "Extreme ultraviolet resist materials for sub-7 nm patterning" (347) and "Progress in the development and understanding of advanced low k and ultralow k dielectrics for very large-scale integrated interconnects—State of the art" (295).

Showing 50 of 59 papers. Every paper with more than 77 citations is listed.

Most cited papers, sortable by citations and release date
#Paper
1 Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET N. Loubet et al. Conference paper Jun 2017 1,052
2 Extreme ultraviolet resist materials for sub-7 nm patterning Li Li, Xuan Liu, Shyam Chand Pal et al. · Chemical Society Reviews Review 2017 347
3 Progress in the development and understanding of advanced low k and ultralow k dielectrics for very large-scale integrated interconnects—State of the art A. Grill, S. M. Gates, Todd E. Ryan et al. · Applied Physics Reviews Open access 15 Jan 2014 295
4 Plasma processing of low-k dielectrics Mikhaı̈l R. Baklanov, Jean‐François de Marneffe, Denis Shamiryan et al. · Journal of Applied Physics 22 Jan 2013 294
5 Challenges and Limitations of CMOS Scaling for FinFET and Beyond Architectures Ali Razavieh, PETER M. ZEITZOFF, Edward Joseph Nowak · IEEE Transactions on Nanotechnology 2019 293
6 300-mm Monolithic Silicon Photonics Foundry Technology Ken Giewont, Shuren Hu, Bo Peng et al. · IEEE Journal of Selected Topics in Quantum Electronics Apr 2019 264
7 Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors Andrew J. Arnold, Ali Razavieh, Joseph R. Nasr et al. · ACS Nano 4 Mar 2017 264
8 Considerations of Environmentally Relevant Test Conditions for Improved Evaluation of Ecological Hazards of Engineered Nanomaterials Patricia Ann Holden et al. · Environmental Science & Technology Open access 13 May 2016 235
9 14nm Ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications Zoran Krivokapić, Uzma Rana, Rohit V. Galatage et al. Conference paper Dec 2017 230
10 A Comprehensive Crossbar Array Model With Solutions for Line Resistance and Nonlinear Device Characteristics An Chen · IEEE Transactions on Electron Devices 20 Mar 2013 229
11 Intrinsic optimization using stochastic nanomagnets Brian Sutton, Kerem Yunus Camsari, Behtash Behin-Aein et al. · Scientific Reports Open access 15 Mar 2017 227
12 Electrically Tunable Bandgaps in Bilayer MoS 2 Tao Chu, Hesameddin Ilatikhameneh, Gerhard Klimeck et al. · Nano Letters 11 Nov 2015 220
13 Quality control and authentication of packaged integrated circuits using enhanced-spatial-resolution terahertz time-domain spectroscopy and imaging Kiarash Ahi, Sina Shahbazmohamadi, Navid Asadizanjani · Optics and Lasers in Engineering 26 Jul 2017 207
14 Utilizing the Variability of Resistive Random Access Memory to Implement Reconfigurable Physical Unclonable Functions An Chen · IEEE Electron Device Letters 24 Dec 2014 203
15 Creation and Control of Two-Dimensional Electron Gas Using Al-Based Amorphous Oxides/SrTiO3 Heterostructures Grown by Atomic Layer Deposition Sang Woon Lee, Yiqun Liu, Jaeyeong Heo et al. · Nano Letters Open access 21 Aug 2012 168
16 Magnetic functional heterojunction reactors with 3D specific recognition for selective photocatalysis and synergistic photodegradation in binary antibiotic solutions Ziyang Lu, Guosheng Zhou, Minshan Song et al. · Journal of Materials Chemistry A 2019 159
17 SOI thermal impedance extraction methodology and its significance for circuit simulation Wei Jin, Weidong Liu, S.K.H. Fung et al. · IEEE Transactions on Electron Devices Apr 2001 157
18 Variability of resistive switching memories and its impact on crossbar array performance An Chen, Ming-Ren Lin Conference paper Apr 2011 155
19 Development of new 2.5D package with novel integrated organic interposer substrate with ultra-fine wiring and high density bumps Kiyoshi Oi, Satoshi Otake, Noriyoshi Shimizu et al. Conference paper May 2014 148
20 A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels Ruijie Xie et al. Conference paper Dec 2016 145
21 A 22nm FDSOI Technology Optimized for RF/mmWave Applications Shao-er Ong et al. Conference paper Jun 2018 144
22 Liquid tunable microlenses based on MEMS techniques Xuefeng Zeng, Hongrui Jiang · Journal of Physics D Applied Physics Open access 17 Jul 2013 144
23 Mathematical Modeling of THz Point Spread Function and Simulation of THz Imaging Systems Kiarash Ahi · IEEE Transactions on Terahertz Science and Technology 12 Oct 2017 143
24 Design of Tunneling Field-Effect Transistors Based on Staggered Heterojunctions for Ultralow-Power Applications Lingquan Wang, Edward T. Yu, Yuan Taur et al. · IEEE Electron Device Letters 14 Apr 2010 141
25 Directed self-assembly of block copolymers for 7 nanometre FinFET technology and beyond Chi‐Chun Liu, Elliott Franke, Yann Mignot et al. · Nature Electronics 9 Oct 2018 140
26 Scaling Challenges for Advanced CMOS Devices Ajey P. Jacob, Ruilong Xie, Min Gyu Sung et al. · International Journal of High Speed Electronics and Systems 17 Feb 2017 132
27 Atomic Layer Deposition of Dielectrics on Graphene Using Reversibly Physisorbed Ozone Srikar Jandhyala, Greg Mordi, Bongki Lee et al. · ACS Nano 21 Feb 2012 132
28 GeSn technology: Extending the Ge electronics roadmap Suyog Gupta, Robert Chen, Blanka Magyari-Köpe et al. Conference paper Dec 2011 126
29 An Efficient Mixed Integer Programming Model Based on Timed Petri Nets for Diverse Complex Cluster Tool Scheduling Problems Chihyun Jung, Tae‐Eog Lee · IEEE Transactions on Semiconductor Manufacturing 20 Dec 2011 123
30 Non-volatile spin switch for Boolean and non-Boolean logic Supriyo Datta, Sayeef Salahuddin, Behtash Behin‐Aein · Applied Physics Letters Open access 17 Dec 2012 121
31 Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors Renan Doria Trevisoli, Rodrigo Trevisoli Doria, Michelly S. de Souza et al. · IEEE Transactions on Electron Devices Open access 12 Oct 2012 120
32 Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories Ekaterina Yurchuk, Stefan Mueller, Dominik Martin et al. Conference paper Jun 2014 116
33 14-nm FinFET Technology for Analog and RF Applications Jagar Singh, J. Ciavatti, Kumaran Sundaram et al. · IEEE Transactions on Electron Devices 6 Dec 2017 114
34 Scheduling Cluster Tools With Ready Time Constraints for Consecutive Small Lots Hyun-Jung Kim, Jun-Ho Lee, Chihyun Jung et al. · IEEE Transactions on Automation Science and Engineering 25 Oct 2012 112
35 Mechanism of Co Liner as Enhancement Layer for Cu Interconnect Gap-Fill Meng‐Dong He, Xingxing Zhang, T. Nogami et al. · Journal of The Electrochemical Society 2013 111
36 High-Voltage Integrated Circuits: History, State of the Art, and Future Prospects Don Disney, Ted Letavic, Tanya Trajkovic et al. · IEEE Transactions on Electron Devices 4 Jan 2017 110
37 In situ observation of electromigration-induced void migration in dual-damascene Cu interconnect structures Anand V. Vairagar, Subodh G. Mhaisalkar, Ahila Krishnamoorthy et al. · Applied Physics Letters 27 Sep 2004 108
38 A review of hot-carrier degradation mechanisms in MOSFETs Alexander Acovic, Giuseppe La Rosa, Yuan-Chen Sun · Microelectronics Reliability Jul 1996 108
39 Study of conduction and switching mechanisms in Al/AlOx/WOx/W resistive switching memory for multilevel applications Ye Zhang, Huaqiang Wu, Yue Bai et al. · Applied Physics Letters 10 Jun 2013 107
40 Effects of Surfactants in an Electroless Nickel-Plating Bath on the Properties of Ni−P Alloy Deposits Bing‐Hung Chen, L. Hong, Yue Ma et al. · Industrial & Engineering Chemistry Research 30 Apr 2002 106
41 45nm CMOS - Silicon Photonics Monolithic Technology (45CLO) for next-generation, low power and high speed optical interconnects Michał Rakowski et al. Conference paper 2020 104
42 Half-terahertz operation of SiGe HBTs Ram Krithivasan, Yuan Lu, John D. Cressler et al. · IEEE Electron Device Letters 28 Jun 2006 103
43 Channel Geometry Impact and Narrow Sheet Effect of Stacked Nanosheet Chun Wing Yeung et al. Conference paper Dec 2018 101
44 A technology-agnostic MTJ SPICE model with user-defined dimensions for STT-MRAM scalability studies Jong Yeon Kim, An Chen, Behtash Behin‐Aein et al. Conference paper Sep 2015 99
45 Reliability studies of vertical GaN devices based on bulk GaN substrates Isik C. Kizilyalli, Phong Bui-Quang, Don Disney et al. · Microelectronics Reliability 16 Jul 2015 99
46 Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD” Esko Ahvenniemi et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Open access 16 Dec 2016 97
47 A Novel Approach to Photonic Packaging Leveraging Existing High-Throughput Microelectronic Facilities Tymon Barwicz, Yoichi Taira, Ted W. Lichoulas et al. · IEEE Journal of Selected Topics in Quantum Electronics 20 Jul 2016 96
48 High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond Qianlong Liu et al. Conference paper Dec 2013 96
49 Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond Hikaru Kawasaki et al. Conference paper Dec 2009 95
50 Modeling Early Breakdown Failures of Gate Oxide in SiC Power MOSFETs Zakariae Chbili, Asahiko Matsuda, Jaafar Chbili et al. · IEEE Transactions on Electron Devices Sep 2016 94

Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.