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Institution · Hebei Semiconductor Research Institute

Most cited papers from Hebei Semiconductor Research Institute

Hebei Semiconductor Research Institute

What are the most cited papers from Hebei Semiconductor Research Institute?

The most cited paper from Hebei Semiconductor Research Institute is "Gbps Terahertz External Modulator Based on a Composite Metamaterial with a Double-Channel Heterostructure" (Yaxin Zhang, Shen Qiao, Shixiong Liang et al., 2015), with 245 citations. Next come "Dynamic Photoinduced Controlling of the Large Phase Shift of Terahertz Waves via Vanadium Dioxide Coupling Nanostructures" (172) and "Real-time programmable metasurface for terahertz multifunctional wave front engineering" (168).

Showing 50 of 62 papers. Every paper with more than 43 citations is listed.

Most cited papers, sortable by citations and release date
#Paper
1 Gbps Terahertz External Modulator Based on a Composite Metamaterial with a Double-Channel Heterostructure Yaxin Zhang, Shen Qiao, Shixiong Liang et al. · Nano Letters 28 Apr 2015 245
2 Dynamic Photoinduced Controlling of the Large Phase Shift of Terahertz Waves via Vanadium Dioxide Coupling Nanostructures Yuncheng Zhao, Yaxin Zhang, Qiwu Shi et al. · ACS Photonics 12 Jul 2018 172
3 Real-time programmable metasurface for terahertz multifunctional wave front engineering Feng Lan, Luyang Wang, Hongxin Zeng et al. · Light Science & Applications Open access 7 Aug 2023 168
4 Demonstration of β-Ga2O3 Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm2 or a 5A/700 V Handling Capabilities Yuanjie Lv, Yuangang Wang, Xingchang Fu et al. · IEEE Transactions on Power Electronics 6 Nov 2020 163
5 A Review of THz Modulators with Dynamic Tunable Metasurfaces Lan Wang, Yaxin Zhang, Xiaoqing Q. Guo et al. · Nanomaterials Open access Jul 2019 160
6 High-Performance Vertical $\beta$ -Ga 2 O 3 Schottky Barrier Diode With Implanted Edge Termination Hong Yu Zhou, Qian Feng, Jing Ning et al. · IEEE Electron Device Letters 6 Sep 2019 159
7 2.41 kV Vertical P-Nio/n-Ga 2 O 3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm 2 Yuan Wang, Hehe Gong, Yuanjie Lv et al. · IEEE Transactions on Power Electronics 29 Oct 2021 149
8 Lateral β-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2 Yuanjie Lv, Hongyu Liu, Xingye Zhou et al. · IEEE Electron Device Letters 17 Feb 2020 141
9 β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings Hehe Gong, Xinxin Yu, Yang Xu et al. · Applied Physics Letters 17 May 2021 137
10 Large phase modulation of THz wave via an enhanced resonant active HEMT metasurface Yaxin Zhang, Yuncheng Zhao, Shixiong Liang et al. · Nanophotonics Open access Jun 2018 124
11 Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces Changjian Zhou, Shouyong Zhang, Zhe Lv et al. · npj 2D Materials and Applications Open access 14 Dec 2020 122
12 Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs Shenghou Liu, Yong Kui Cai, Guodong Gu et al. · IEEE Electron Device Letters 10 Jan 2012 115
13 Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2 Yuanjie Lv, Xingye Zhou, Shibing Long et al. · IEEE Electron Device Letters 2018 110
14 A Novel 220-GHz GaN Diode On-Chip Tripler With High Driven Power Bo Zhang, Dongfeng Ji, Deng Fang et al. · IEEE Electron Device Letters 7 Mar 2019 107
15 Comprehensively Improved Performance of β-Ga 2 O 3 Solar-Blind Photodetector Enabled by a Homojunction with Unique Passivation Mechanisms L. X. Qian, Zhiwen Gu, Xiaodong Huang et al. · ACS Applied Materials & Interfaces 12 Aug 2021 105
16 High-precision digital terahertz phase manipulation within a multichannel field perturbation coding chip Hongxin Zeng, Huajie Liang, Yaxin Zhang et al. · Nature Photonics 9 Aug 2021 102
17 High-Speed Efficient Terahertz Modulation Based on Tunable Collective-Individual State Conversion within an Active 3 nm Two-Dimensional Electron Gas Metasurface Yuncheng Zhao, Lan Wang, Yaxin Zhang et al. · Nano Letters 9 Aug 2019 96
18 An ultra clean self-aligned process for high maximum oscillation frequency graphene transistors Zhihong Feng, Cui Yu, J. Li et al. · Carbon 7 Apr 2014 93
19 Room-temperature, low-impedance and high-sensitivity terahertz direct detector based on bilayer graphene field-effect transistor Hua Qin, Jiandong Sun, Shixiong Liang et al. · Carbon 14 Feb 2017 91
20 High-Voltage ($\overline{\text{2}}01$ ) $\beta$ -Ga2O3 Vertical Schottky Barrier Diode With Thermally-Oxidized Termination Yuangang Wang, Shujun Cai, Ming Liu et al. · IEEE Electron Device Letters 26 Nov 2019 86
21 Beveled Fluoride Plasma Treatment for Vertical $\beta$ -Ga2O3Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage Zhuangzhuang Hu, Yuanjie Lv, Chunyong Zhao et al. · IEEE Electron Device Letters 22 Jan 2020 85
22 Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors Chongbiao Luan, Zhaojun Lin, Yuanjie Lv et al. · Journal of Applied Physics 23 Jul 2014 84
23 Droplet-based micro oscillating-flow PCR chip Wei Wang, Zhixin Li, Rong Luo et al. · Journal of Micromechanics and Microengineering Open access 25 May 2005 83
24 Enhancement‐Mode β‐Ga2O3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing Yuanjie Lv, Xingye Zhou, Shibing Long et al. · physica status solidi (RRL) - Rapid Research Letters 11 Dec 2019 81
25 Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array Yang Liu, Bo Zhang, Yinian Feng et al. · Applied Sciences Open access 9 Nov 2020 77
26 Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density Cui Yu, Chuangjie Zhou, Jianchao Guo et al. · Functional Diamond Open access 8 Jun 2022 75
27 Exploring the nonlinear piezoresistive effect of 4H-SiC and developing MEMS pressure sensors for extreme environments Chen Wu, Xudong Fang, Qiang Kang et al. · Microsystems & Nanoengineering Open access 3 Apr 2023 74
28 Single crystalline β-Ga2O3 homoepitaxial films grown by MOCVD Zeming Li, Teng Jiao, Jiaqi Yu et al. · Vacuum 3 May 2020 74
29 A 177–183 GHz High-Power GaN-Based Frequency Doubler With Over 200 mW Output Power Shixiong Liang, Xubo Song, Lisen Zhang et al. · IEEE Electron Device Letters 19 Mar 2020 69
30 An optimized micromachined convective accelerometer with no proof mass Xiaowei Luo, Yuqiang Yang, Fen Zheng et al. · Journal of Micromechanics and Microengineering Open access 24 Jul 2001 66
31 18-GHz 3.65-W/mm Enhancement-Mode AlGaN/GaN HFET Using Fluorine Plasma Ion Implantation Zhihong Feng, Rui Zhou, Shengjun Xie et al. · IEEE Electron Device Letters 8 Oct 2010 65
32 Experimental Study on Static and Dynamic Characteristics of Ga2O3 Schottky Barrier Diodes With Compound Termination Yuxi Wei, Xiaorong Luo, Yuangang Wang et al. · IEEE Transactions on Power Electronics 31 Mar 2021 61
33 Superior Performance β-Ga 2 O 3 Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier Feihong Wu, Yuangang Wang, Guangzhong Jian et al. · IEEE Transactions on Electron Devices 9 Feb 2023 60
34 Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs Peng Cui, Huan Liu, Wei Lin et al. · IEEE Transactions on Electron Devices 31 Jan 2017 59
35 A high open-circuit voltage gallium nitride betavoltaic microbattery Zaijun Cheng, Xuyuan Chen, Haisheng San et al. · Journal of Micromechanics and Microengineering 27 Jun 2012 59
36 10-kV Lateral β-Ga₂O₃ MESFETs With B Ion Implanted Planar Isolation Hongyu Liu, Yuangang Wang, Yuanjie Lv et al. · IEEE Electron Device Letters 24 May 2023 58
37 Stability of networked control systems with communication constraints Yuquan Zhang, Qiuhai Zhong, Lei Wei Conference paper Jul 2008 58
38 Terahertz Switchable Focusing Planar Lens With a Nanoscale Vanadium Dioxide Integrated Metasurface Wei Kou, Wenqiao Shi, Yaxin Zhang et al. · IEEE Transactions on Terahertz Science and Technology 18 Aug 2021 57
39 UV-photodetector based on NiO/diamond film Xiaohui Chang, Yanfeng Wang, Xiaofan Zhang et al. · Applied Physics Letters 15 Jan 2018 57
40 Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs Ming Yang, Zhaojun Lin, Jingtao Zhao et al. · IEEE Transactions on Electron Devices 3 Mar 2016 57
41 β- Ga 2 O 3 epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD Qiong Cao, Linan He, Hongdi Xiao et al. · Materials Science in Semiconductor Processing 4 Feb 2018 53
42 Graphene Amplifier MMIC on SiC Substrate Cui Yu, Ze He, Q. B. Liu et al. · IEEE Electron Device Letters 22 Mar 2016 53
43 A single luminescence center ultra-broadband near-infrared LiScGeO 4 :Cr phosphor for biological tissue penetration Zejun Ye, Zhijun Wang, Qian Wu et al. · Dalton Transactions 2021 50
44 Diamond based field-effect transistors with SiNx and ZrO2 double dielectric layers Wei Wang, Kai Fu, Chao Hu et al. · Diamond and Related Materials 4 May 2016 50
45 Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement Qi Zhong Zhou, Wanjun Chen, Shenghou Liu et al. · IEEE Transactions on Electron Devices 4 Feb 2013 50
46 Brief review of silver sinter-bonding processing for packaging high-temperature power devices Haidong Yan, Peijie Liang, Yunhui Mei et al. · Chinese Journal of Electrical Engineering Open access Sep 2020 48
47 Ultrafast modulable 2DEG Huygens metasurface Hongxin Zeng, Xuan Cong, Shiqi Wang et al. · Photonics Research 7 Mar 2024 47
48 Low-Sidelobe Air-Filled Slot Array Fabricated Using Silicon Micromachining Technology for Millimeter-Wave Application Le Chang, Yue Li, Zhijun Zhang et al. · IEEE Transactions on Antennas and Propagation 21 Jun 2017 47
49 Thermal optimization on micromachined convective accelerometer Xiaowei Luo, Z. X. Li, Zeng-Yuan Guo et al. · Heat and Mass Transfer Aug 2002 47
50 Low-loss beam synthesizing network based on Epsilon-near-zero (ENZ) medium for on-chip antenna array Hao Li, Ziheng Zhou, Yongzhi Zhao et al. · Chip Open access 16 Apr 2023 46

Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.