Institution · IntelliEPI (United States)
Most cited papers from IntelliEPI (United States)
What are the most cited papers from IntelliEPI (United States)?
The most cited paper from IntelliEPI (United States) is "Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V" (Guangle Zhou, Ruoxuan Li, T. Vasen et al., 2012), with 116 citations. Next come "ISOTOPES IN WATER" (111) and "InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and $I_{\rm ON}/I_{\rm OFF}$ Ratio Near $\hbox{10}^{6}$" (93).
Showing 50 of 63 papers. Every paper is listed.
| # | Paper | ||
|---|---|---|---|
| 1 | Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V Guangle Zhou, Ruoxuan Li, T. Vasen et al. | Dec 2012 | 116 |
| 2 | ISOTOPES IN WATER W.G. Darling, ADRIAN H. BATH, J. J. Gibson et al. · Developments in paleoenvironmental research | 2006 | 111 |
| 3 | InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and $I_{\rm ON}/I_{\rm OFF}$ Ratio Near $\hbox{10}^{6}$ Guangle Zhou, Yeqing Lu, Rui Tong Li et al. · IEEE Electron Device Letters | 4 Apr 2012 | 93 |
| 4 | Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the Gate Guangle Zhou, Yeqing Lu, Rui Tong Li et al. · IEEE Electron Device Letters | 22 Sep 2011 | 71 |
| 5 | Electron density dependence of in-plane spin relaxation anisotropy in GaAs∕AlGaAs two-dimensional electron gas Baoli Liu, Hongming Zhao, Jia Wang et al. · Applied Physics Letters | 12 Mar 2007 | 34 |
| 6 | Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors Sanghyeon Kim, Yuki Ikku, Masafumi Yokoyama et al. · Applied Physics Letters | 28 Jul 2014 | 30 |
| 7 | Lg = 60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator D.-H. Kim, Jesús A. del Alamo, D.A. Antoniadis et al. · Applied Physics Letters | 26 Nov 2012 | 25 |
| 8 | High performance InGaAs-on-insulator MOSFETs on Si by novel direct wafer bonding technology applicable to large wafer size Si S. H. Kim, Yuki Ikku, Masafumi Yokoyama et al. | Jun 2014 | 21 |
| 9 | Self-aligned InAs/Al0.45Ga0.55Sb vertical tunnel FETs Guangle Zhou, Yeqing Lu, Ruoxuan Li et al. | Jun 2011 | 21 |
| 10 | Electrostatic membrane deformable mirror wavefront control systems: design and analysis Keith Bush, Dee German, Beverly J. Klemme et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE | 12 Oct 2004 | 20 |
| 11 | InGaAs composition monitoring for production MBE by in situ optical-based flux monitor (OFM) Paul R. Pinsukanjana, J. Marquis, Jared Hubbard et al. · Journal of Crystal Growth | Apr 2003 | 17 |
| 12 | Correlating optical infrared and electronic properties of low tellurium doped GaSb bulk crystals Katy Roodenko, P.-K. Liao, Dongchen Lan et al. · Journal of Applied Physics | Apr 2016 | 16 |
| 13 | Ultra high-speed 0.25-μm emitter InP-InGaAs SUBTs with f/sub max/ of 687 GHz Dejian Yu, Kyeong-Keun Choi, Kyoung Eun Lee et al. | 19 Apr 2005 | 15 |
| 14 | Ultra high-speed InP-InGaAs SHBTs with f/sub max/ of 478 GHz Daekyu Yu, Kyungho Lee, Bumman Kim et al. · IEEE Electron Device Letters | Jun 2003 | 15 |
| 15 | Deformable mirrors for high-power lasers Supriyo Sinha, Justin D. Mansell, Robert L. Byer · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE | 5 Feb 2002 | 14 |
| 16 | E-mode planar Lg = 35 nm In0.7Ga0.3As MOSFETs with InP/Al2O3/HfO2 (EOT = 0.8 nm) composite insulator D.-H. Kim, P. Hundal, A. Papavasiliou et al. | Dec 2012 | 13 |
| 17 | Recent developments in type-II superlattice-based infrared detectors E. H. Aifer, Sergey I. Maximenko, Michael K. Yakes et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE | 23 Apr 2010 | 10 |
| 18 | 37-GHz bandwidth monolithically integrated InP HBT/evanescently coupled photodiode Wei-Kuo Huang, Shou-chian Huang, Hsiao-wen Chung et al. · IEEE Photonics Technology Letters | Jun 2006 | 8 |
| 19 | C-QWIP material design and growth K. K. Choi, John W. Devitt, David P. Forrai et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE | 27 Apr 2007 | 8 |
| 20 | Deformable mirror development at Stanford University Justin D. Mansell, Supriyo Sinha, Robert L. Byer · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE | 5 Feb 2002 | 8 |
| 21 | Random alloy AlInAsSb single photon avalanche diodes with high breakdown probability Daniel J. Herrera, Adam A. Dadey, Kubra Circir et al. · Journal of Applied Physics | 15 Apr 2025 | 7 |
| 22 | Development of n-type Te-doped GaSb substrates with low carrier concentration for FPA applications Katy Roodenko, P.-K. Liao, Dongchen Lan et al. · Infrared Physics & Technology | Mar 2017 | 6 |
| 23 | (Invited) High Performance III-V-on-Insulator MOSFETs on Si Realized by Direct Wafer Bonding Applicable to Large Wafer Size Shinichi Takagi, Sanghyeon Kim, Yuki Ikku et al. · ECS Transactions | 27 Mar 2015 | 5 |
| 24 | Optoelectronic Mixer with Low Up-conversion Loss and Wide Up-conversion Bandwidth by Use of Flip-Chip Bonding Near-Ballistic Uni-Traveling-Carrier Photodiode and Coupled-Line Filter Y.-S. Wu, Chih-Sheng Chu, Jin‐Wei Shi et al. | Feb 2008 | 5 |
| 25 | Current transport of GaAsSb-based DHBTs with different emitter structures Chun-Ting Pan, Che-ming Wang, Yue‐Ming Hsin et al. · Solid-State Electronics | 9 May 2009 | 5 |
| 26 | Status of multi-wafer production MBE capabilities for extended SWIR III-V epi materials for IR detection Everett D. Fraser, Jiayi Shao, Paul Frensley et al. · Opto-Electronics Review | 24 Feb 2023 | 4 |
| 27 | Control over the optical and electronic performance of GaAs/AlGaAs QWIPs grown by production MBE Katy Roodenko, K. K. Choi, K. P. Clark et al. · Infrared Physics & Technology | 6 Mar 2017 | 4 |
| 28 | Control over dark current densities and cutoff wavelengths of GaAs/AlGaAs QWIP grown by multi-wafer MBE reactor Katy Roodenko, K. K. Choi, K. P. Clark et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE | 19 Sep 2016 | 4 |
| 29 | GaAsSb-based HBTS grown by production MBE system H. J. Zhu, Junemo Koo, Paul R. Pinsukanjana et al. | 13 Jul 2005 | 4 |
| 30 | Study of MnAs as a Spin Injector for GaAs-Based Semiconductor Heterostructures Jaesuk Kwon, Robyn E. Goacher, Everett D. Fraser et al. · Journal of Low Temperature Physics | 4 Sep 2012 | 4 |
| 31 | 36 GHz bandwidth optoelectronic integrated circuit with flip-chip-assembled InP HBT/evanescently coupled photodiode Wei-Kuo Huang, Shipei Huang, Yue‐Ming Hsin et al. · IET Optoelectronics | 11 Feb 2008 | 4 |
| 32 | Design guideline for high-speed InP/InGaAs SHBT using a practical scaling law Daekyu Yu, Kyungho Lee, Kwangsik Choi et al. · Solid-State Electronics | May 2006 | 4 |
| 33 | Temperature dependent study of InAlAs–InP∕GaAsSb∕InP double heterojunction bipolar transistors Che-ming Wang, Yue‐Ming Hsin, Haijun Zhu et al. · Applied Physics Letters | 4 Jun 2007 | 4 |
| 34 | C-QWIP focal plane array development K. K. Choi, David P. Forrai, D. Endres et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE | 28 Aug 2008 | 4 |
| 35 | Effect of annealing on the compositional modulation of InAlAsSb Nuria Baladés, David L. Sales, Miriam Herrera et al. · Applied Surface Science | 6 Jul 2016 | 3 |
| 36 | Infrared optical and electronic properties in low tellurium doped GaSb substrates for SLS FPA applications Katy Roodenko, P.-K. Liao, Dongchen Lan et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE | 26 May 2016 | 3 |
| 37 | Realization of high-speed to SHBTs using novel but simple techniques for parasitic reduction Daekyu Yu, Kwangsik Choi, Kyung-Ho Lee et al. | 13 Jul 2005 | 3 |
| 38 | Commercialization of adaptive optics Justin D. Mansell · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE | Nov 2002 | 3 |
| 39 | Implementation of integrated real-time multi-sensors on a multi-wafer production MBE system Guang Wang, Ren Ge, Luan Le et al. · Journal of Crystal Growth | Jul 2001 | 3 |
| 40 | Multi-wafer production MBE capabilities for Sb-based type-II SLS IR detectors (Conference Presentation) Paul R. Pinsukanjana | 7 Jun 2017 | 2 |
| 41 | Ultra low background InGaAs epi-layer on InP for PIN applications by production MBE Yiaojun Jin, Paul R. Pinsukanjana, J.C. Pepper et al. | 13 Jul 2005 | 2 |
| 42 | Diffractive wavefront control with a continuous reflective surface Justin D. Mansell · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE | Nov 2002 | 2 |
| 43 | The effects on plasma properties of a current node on inductively coupled plasma sources S. Srinivasan, J. Marquis, L. Pratti et al. · Plasma Sources Science and Technology | 16 Jun 2003 | 2 |
| 44 | Fabrication of high-speed InP/InGaAs/InP DHBT with a new self-aligned metallization technique for reduced base resistance Kwangsik Choi, Daekyu Yu, Kyungho Lee et al. · Solid-State Electronics | Sep 2006 | 2 |
| 45 | C-QWIP focal plane arrays K. K. Choi, David P. Forrai, D. Endres et al. · Infrared Physics & Technology | 10 Jun 2009 | 2 |
| 46 | Molecular Beam Epitaxy as a Mass Production Enabling Technology for Electronic/Optoelectronic Devices Kevin P. Clark, Everett D. Fraser, Wei Li et al. · Elsevier eBooks | 2018 | 1 |
| 47 | Large diameter Epi-ready GaSb substrate manufacturing (Conference Presentation) Paul R. Pinsukanjana | 7 Jun 2017 | 1 |
| 48 | High Accuracy Modeling Method of UTC-PD Photodiode Hua Feng Wen, Qiu Hua Nie, Tie Feng Xu et al. · Advanced materials research | 27 Jun 2013 | 1 |
| 49 | AlInAsSb/InGaAs single-photon avalanche diodes with high avalanche breakdown probability Kubra Circir, Daniel J. Herrera, Jiayi Shao et al. · Applied Physics Letters | 24 Aug 2026 | 0 |
| 50 | Transformer and Latent Scalable Contrastive Learning for Ghost-Free High Dynamic Range Imaging Heunseung Lim, Jinhoi Kim, Seongwoong Kim et al. | 21 Apr 2026 | 0 |
Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.