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Institution · IQE (United States)

Most cited papers from IQE (United States)

IQE (United States)

What are the most cited papers from IQE (United States)?

The most cited paper from IQE (United States) is "Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing" (Gilbert Dewey, B. Chu-Kung, J. Boardman et al., 2011), with 339 citations. Next come "High performance continuous wave 1.3 μ m quantum dot lasers on silicon" (338) and "Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb" (315).

Showing 50 of 60 papers. Every paper with more than 16 citations is listed.

Most cited papers, sortable by citations and release date
#Paper
1 Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing Gilbert Dewey, B. Chu-Kung, J. Boardman et al. Conference paper Dec 2011 339
2 High performance continuous wave 1.3 μ m quantum dot lasers on silicon Alan Y. Liu, Chong Zhang, Justin Norman et al. · Applied Physics Letters 27 Jan 2014 338
3 Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb Elizabeth H. Steenbergen, Blair C. Connelly, Grace D. Metcalfe et al. · Applied Physics Letters 19 Dec 2011 315
4 Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications M. Radosavljević, B. Chu-Kung, Sean F. Corcoran et al. Conference paper Dec 2009 137
5 Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation M. Radosavljević, Gilbert Dewey, Dipanjan Basu et al. Conference paper Dec 2011 136
6 Experimental demonstration of 100nm channel length In0.53Ga0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and SRAM applications S. Mookerjea, D. K. Mohata, Rishikesh Krishnan et al. Conference paper Dec 2009 123
7 Experimental Staggered-Source and N+ Pocket-Doped Channel III–V Tunnel Field-Effect Transistors and Their Scalabilities D. K. Mohata, S. Mookerjea, Ashish Kumar Agrawal et al. · Applied Physics Express 9 Feb 2011 105
8 Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications D. K. Mohata, R. Bijesh, Salil Mujumdar et al. Conference paper Dec 2011 103
9 Barrier-Engineered Arsenide–Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current D. K. Mohata, Bijesh Rajamohanan, Theresa S. Mayer et al. · IEEE Electron Device Letters 29 Sep 2012 99
10 Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic applications M. Radosavljević, Gilbert Dewey, Joel M. Fastenau et al. Conference paper Dec 2010 93
11 Ultrahigh-Speed 0.5 V Supply Voltage $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ Quantum-Well Transistors on Silicon Substrate Suman Datta, Gilbert Dewey, Joel M. Fastenau et al. · IEEE Electron Device Letters Aug 2007 88
12 Interband cascade infrared photodetectors with enhanced electron barriers and p-type superlattice absorbers Zhiping Tian, R. T. Hinkey, Rui Q. Yang et al. · Journal of Applied Physics 15 Jan 2012 82
13 Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser Hery Susanto Djie, B. S. Ooi, X. M. Fang et al. · Optics Letters 13 Dec 2006 76
14 Heterogeneous integration of enhancement mode in 0.7 ga 0.3 as quantum well transistor on silicon substrate using thin (les 2 μm) composite buffer architecture for high-speed and low-voltage ( 0.5 v) logic applications Mantu Kumar Hudait, Gilbert Dewey, Suman Datta et al. Conference paper Dec 2007 72
15 Quantum Dashes on InP Substrate for Broadband Emitter Applications Boon Siew Ooi, Hery Susanto Djie, Yang Wang et al. · IEEE Journal of Selected Topics in Quantum Electronics 2008 68
16 Ultrabroad stimulated emission from quantum-dash laser Hery Susanto Djie, C. L. Tan, Boon Siew Ooi et al. · Applied Physics Letters 10 Sep 2007 64
17 Monolithic integration of InP-based transistors on Si substrates using MBE W.K. Liu, Dmitri Lubyshev, Joel M. Fastenau et al. · Journal of Crystal Growth 5 Dec 2008 62
18 Indium Phosphide Heterobipolar Transistor Technology Beyond 1-THz Bandwidth Johann C. Rode, Han‐Wei Chiang, Prateek Choudhary et al. · IEEE Transactions on Electron Devices 3 Aug 2015 56
19 Sub-300 nm InGaAs/InP Type-I DHBTs with a 150 nm collector, 30 nm base demonstrating 755 GHz fmaxand 416 GHz fT Zach Griffith, Erik Lind, Mark J. W. Rodwell et al. Conference paper May 2007 50
20 High operating temperature nBn detector with monolithically integrated microlens Alexander Soibel, Sam A. Keo, Anita M. R. Fisher et al. · Applied Physics Letters 22 Jan 2018 49
21 Demonstration of In0.9Ga0.1As/GaAs0.18Sb0.82 near broken-gap tunnel FET with ION=740μA/μm, GM=70μS/μm and gigahertz switching performance at VDs=0.5V R. Bijesh, H. Liu, Himanshu Madan et al. Conference paper Dec 2013 43
22 Wideband DHBTs using a graded carbon-doped InGaAs base Mattias E. Dahlstrom, X. M. Fang, Dmitri Lubyshev et al. · IEEE Electron Device Letters Jul 2003 42
23 Single‐Crystal Multilayer Nitride, Metal, and Oxide Structures on Engineered Silicon for New‐Generation Radio Frequency Filter Applications Rytis Dargis, Andrew Clark, Azadeh Ansari et al. · physica status solidi (a) 10 Jan 2020 40
24 Detection wavelength of InGaAs/AlGaAs quantum wells and superlattices K. K. Choi, Sumith V. Bandara, Sarath D. Gunapala et al. · Journal of Applied Physics 15 Jan 2002 40
25 Commercial molecular beam epitaxy production of high quality SrTiO3 on large diameter Si substrates Xing Gu, Dmitri Lubyshev, J. Batzel et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena May 2009 39
26 Bulk InAsxSb1-x nBn photodetectors with greater than 5μm cutoff on GaSb Neil F. Baril, Alexander Brown, Patrick Maloney et al. · Applied Physics Letters 19 Sep 2016 38
27 A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates Thomas E. Kazior, Jeffery R. LaRoche, Dmitri Lubyshev et al. Conference paper Jun 2009 38
28 Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates Dmitri Lubyshev, Joel M. Fastenau, Yuh‐Renn Wu et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena May 2008 38
29 Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure Yunhui Zhu, Nikhil Jain, S. Vijayaraghavan et al. · Journal of Applied Physics Nov 2012 38
30 Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy Yunhui Zhu, Nikhil Jain, S. Vijayaraghavan et al. · Journal of Applied Physics 15 Jul 2012 36
31 InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f/sub /spl tau// and 505-GHz f/sub max/ Zach Griffith, Mattias E. Dahlstrom, Mark J. W. Rodwell et al. · IEEE Electron Device Letters 28 Dec 2004 34
32 InGaAs/InP DHBTs with 120-nm collector having simultaneously high f/sub /spl tau//, f/sub max//spl ges/450 GHz Zach Griffith, Mark J. W. Rodwell, Xiao-Ming Fang et al. · IEEE Electron Device Letters 19 Jul 2005 33
33 An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch Vladimir Djara, Veeresh Vidyadhar Deshpande, Emanuele Uccelli et al. Conference paper Jun 2015 32
34 InGaAs–InP Mesa DHBTs With Simultaneously High $f_tau$ and $f_max$ and Low $C_rm cb/I_c$ Ratio Zach Griffith, Mattias E. Dahlstrom, Miguel E. Urteaga et al. · IEEE Electron Device Letters May 2004 31
35 InP-based quantum cascade lasers monolithically integrated onto silicon Rowel Go, Hubert Krysiak, Matthew Fetters et al. · Optics Express Open access 15 Aug 2018 30
36 Four-band quantum well infrared photodetector array Sumith V. Bandara, Sarath D. Gunapala, J.K. Liu et al. · Infrared Physics & Technology 3 Sep 2003 30
37 Quantum Dash Intermixing Hery Susanto Djie, Yang Wang, Yun-Hsiang Ding et al. · IEEE Journal of Selected Topics in Quantum Electronics 2008 28
38 Experimental observation and physics of “negative” capacitance and steeper than 40mV/decade subthreshold swing in Al0.83In0.17N/AlN/GaN MOS-HEMT on SiC substrate Han Wui Then, Sandeepan DasGupta, M. Radosavljević et al. Conference paper Dec 2013 27
39 Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application Yunhai Zhu, Nikhil Jain, D. K. Mohata et al. · Journal of Applied Physics 14 Jan 2013 26
40 MBE growth of P-doped 1.3 μm InAs quantum dot lasers on silicon Alan Y. Liu, Chong Zhang, Andrew Snyder et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 6 Feb 2014 26
41 Intervalenceband and plasmon optical absorption in heavily doped GaAs:C W. Songprakob, Richard Zallen, D. V. Tsu et al. · Journal of Applied Physics 2002 26
42 High-temperature operation of interband cascade infrared photodetectors with cutoff wavelengths near 8 μ m Hossein Lotfi, Lin Lei, Lu Li et al. · Optical Engineering 11 Jun 2015 25
43 Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications Dmitri Lubyshev, Joel M. Fastenau, X. M. Fang et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena May 2004 25
44 Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates Dmitri Lubyshev, W. K. Liu, T. R. Stewart et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Jul 2001 23
45 640×512 pixel narrow-band, four-band, and broad-band quantum well infrared photodetector focal plane arrays Sarath D. Gunapala, Sumith V. Bandara, J.K. Liu et al. · Infrared Physics & Technology 12 Sep 2003 22
46 Tuning and tailoring of broadband quantum-well infrared photodetector responsivity spectrum Sumith V. Bandara, Sarath D. Gunapala, J. K. Liu et al. · Applied Physics Letters 6 Apr 2005 22
47 Three-stack, three-color quantum-well infrared photodetector for mid-, long-, and very long-wavelength infrared detection Lin Jiang, Sheng S. Li, Meimei Z. Tidrow et al. · Applied Physics Letters 29 Oct 2001 21
48 1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance Vibhor Kumar Jain, Johann C. Rode, Han‐Wei Chiang et al. Conference paper Jun 2011 20
49 200-nm InGaAs/InP type I DHBT employing a dual-sidewall emitter process demonstrating ƒmax ≫ 800 GHz and ƒτ = 360 GHz Evan Lobisser, Zach Griffith, Vibhor Kumar Jain et al. Conference paper May 2009 19
50 InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous $f_{\tau}/f_{\max} \sim \hbox{430/800}\ \hbox{GHz}$ Vibhor Kumar Jain, Evan Lobisser, Ashish Baraskar et al. · IEEE Electron Device Letters 18 Nov 2010 19

Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.