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Most cited papers from Monolith Semiconductor (United States)

What are the most cited papers from Monolith Semiconductor (United States)?

The most cited paper from Monolith Semiconductor (United States) is "Nature of Carbon Black Reinforcement of Rubber: Perspective on the Original Polymer Nanocomposite" (Christopher G. Robertson, Ned J. Hardman, 2021), with 290 citations. Next come "An energy-efficient plasma methane pyrolysis process for high yields of carbon black and hydrogen" (180) and "Design and Implementation of a Two-Channel Interleaved Vienna-Type Rectifier With >99% Efficiency" (82).

Showing 50 of 51 papers. Every paper is listed.

Most cited papers, sortable by citations and release date
#Paper
1 Nature of Carbon Black Reinforcement of Rubber: Perspective on the Original Polymer Nanocomposite Christopher G. Robertson, Ned J. Hardman · Polymers Open access 12 Feb 2021 290
2 An energy-efficient plasma methane pyrolysis process for high yields of carbon black and hydrogen Laurent Fulcheri, Vandad-Julien Rohani, Elliott Wyse et al. · International Journal of Hydrogen Energy Open access 10 Nov 2022 180
3 Design and Implementation of a Two-Channel Interleaved Vienna-Type Rectifier With >99% Efficiency Qiong Wang, Xuning Zhang, Rolando P. Burgos et al. · IEEE Transactions on Power Electronics 20 Feb 2017 82
4 Agent Architecture Considerations for Real-Time Planning in Games Jeff Orkin · Proceedings of the AAAI Conference on Artificial Intelligence and Interactive Digital Entertainment Conference paperOpen access Jun 2005 73
5 Why hybridization of energy storage is essential for future hybrid, plug-in and battery electric vehicles John M. Miller, Ted Bohn, Thomas J. Dougherty et al. Conference paper Sep 2009 64
6 Detailed understanding of the carbon black–polymer interface in filled rubber composites Lucas A. Wilke, Christopher G. Robertson, Daniel A. Karsten et al. · Carbon 18 Sep 2022 54
7 High-Speed Monolithic Multipliers for Real-Time Digital Signal Processing Shlomo Waser · Computer Oct 1978 50
8 Operating Principles, Design Considerations, and Experimental Characteristics of High-Voltage 4H-SiC Bidirectional IGBTs Sauvik Chowdhury, Collin W. Hitchcock, Zachary Stum et al. · IEEE Transactions on Electron Devices Dec 2016 32
9 A universal service-semantics description language Ajay Bansal, S. Kona, Luke Simon et al. Conference paper 2005 32
10 Time Dependent Dielectric Breakdown in High Quality SiC MOS Capacitors Zakariae Chbili, Kin P. Cheung, Jason Paul Campbell et al. · Materials science forum Open access 24 May 2016 31
11 Transduction magnitude and phase for COM modeling of SAW devices B. P. Abbott, Clinton S. Hartmann, Donald C. Malocha · IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control Open access 1992 30
12 Power Electronic Enabled Active Hybrid Energy Storage System and its Economic Viability John M. Miller, Uday Deshpande, Thomas J. Dougherty et al. Conference paper Feb 2009 30
13 Plasma-based conversion of methane into hydrogen and carbon black Laurent Fulcheri, Enoch Dames, Vandad Rohani · Current Opinion in Green and Sustainable Chemistry ReviewOpen access 26 Sep 2024 21
14 1700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable 225°C Operation Kevin Matocha, Kiran V. Chatty, Sujit Banerjee et al. · Materials science forum Open access 26 Feb 2014 21
15 A Universal Service Description Language Luke Simon, Ajay Mallya, Ajay Bansal et al. Conference paper 2005 19
16 Biodiesel surrogate and ethane evaluation for green carbon black and turquoise hydrogen synthesis via thermal plasma Robert J. Lawson, Shruthi Dasappa, Jad Diab et al. · Energy Conversion and Management Feb 2024 16
17 Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs Fabricated in a High Volume CMOS Foundry Sauvik Chowdhury, Levi Gant, Blake Powell et al. · Materials science forum 5 Jun 2018 15
18 Web Service Discovery and Composition using USDL S. Kona, Ajay Bansal, Gopal Gupta et al. Conference paper 2006 13
19 Review of DC and AC Arc Plasma at High Pressures Above Atmospheric Pressure Jad Diab, Enoch Dames, Vandad Rohani et al. · Plasma Chemistry and Plasma Processing 25 Feb 2024 12
20 Manufacturable and rugged 1.2 KV SiC MOSFETs fabricated in high-volume 150mm CMOS fab Soumitro Banerjee, Kevin Matocha, Kiran V. Chatty et al. Conference paper Jun 2016 12
21 Application-focused modeling procedure for 1.2kV SiC MOSFET's Ali Shahabi, Andrew N. Lemmon, Sujit Banerjee et al. Conference paper Mar 2017 11
22 Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers Kevin Matocha, Sujit Banerjee, Kiran V. Chatty · Materials science forum Open access 24 May 2016 11
23 Rare earth elements in the international economic scenario Carlos A. Ortiz, Elias Marques Viana Júnior · REM - International Engineering Journal Open access 8 Nov 2014 10
24 Performance and reliability of 1200V SiC planar MOSFETs fabricated on 150mm SiC substrates Blake Powell, Kevin Matocha, Sauvik Chowdhury et al. Conference paper Nov 2016 9
25 Next generation 1200V, 3.5mΩ.cm2 SiC planar gate MOSFET with excellent HTRB reliability Sauvik Chowdhury, Kevin Matocha, Blake Powell et al. Conference paper May 2018 8
26 Semantics-basedWeb Service Composition engine Srividya Kona, Ajay Bansal, Gopal Gupta et al. Conference paper Jul 2007 8
27 Plasma chemistry and plasma reactors for turquoise hydrogen and carbon nanomaterials production Enoch Dames, Vandad Rohani, Laurent Fulcheri · Advances in chemical engineering Book chapter 2023 7
28 3300V SiC DMOSFETs Fabricated in High-Volume 150 mm CMOS Fab Blake Powell, Kevin Matocha, Sauvik Chowdhury et al. · Materials science forum Open access 5 Jun 2018 7
29 650V and 900V, 150A SiC Schottky diode for automotive applications Kiran V. Chatty, Sujit Banerjee, Kevin Matocha Conference paper Nov 2016 7
30 A SiC-based isolated DC/DC converter for high density data center applications Ali Shahabi, Andrew N. Lemmon, Ryan C. Graves et al. Conference paper Mar 2018 6
31 Current-Controlled Negative Resistance in High-Voltage 4H-SiC p-i-n Rectifiers Sauvik Chowdhury, Collin W. Hitchcock, R. Dahal et al. · IEEE Transactions on Electron Devices 16 Dec 2016 6
32 Pyrolysis of Methane by Thermal Plasma: A 30 + year Journey and Start of an Industrial Transition Laurent Fulcheri, Enoch Dames, Vandad-Julien Rohani · Plasma Chemistry and Plasma Processing 27 Dec 2025 4
33 GH10-UMS 100 nm GaN Technology S. Bouzid-Driad, Manfred Madel, Pierre Denis et al. Conference paper 22 Sep 2025 2
34 Estudo do processo construtivo de um protótipo que servirá como base para uma residência unifamiliar utilizando painel monolítico em Manaus/Amazonas Israel Carneiro Araújo, Igor Nonato Almeida Pereira, Érika Cristina Nogueira Marques Pinheiro · Brazilian Journal of Development Open access 17 Nov 2022 2
35 Large scale test bed for in-circuit reliability testing of silicon carbide diodes and MOSFETs emulating real life voltage and current stress Gin Sheh, Xuning Zhang, Levi Gant et al. Conference paper Mar 2017 2
36 MONOLITH: a high resolution neutrino oscillation experiment T. Tabarelli de Fatis · arXiv (Cornell University) PreprintOpen access 22 Jun 2001 2
37 Optimizing Pointer Analysis Using Bisimilarity Luke Simon · Lecture notes in computer science Conference paper 2009 2
38 Specxai - Spectral Interpretability of Deep Learning Models Aditya Balu, Stefan Druc, Peter Wooldridge et al. · Research Square PreprintOpen access 24 Aug 2023 1
39 Rekonstruksi Pemberantasan Kartel Melalui Leniency Program Dalam Upaya Mendorong Pertumbuhan Ekonomi Nasional Rivaldi Rivaldi, Shafira Adelia Radiska, Ivan Efendi · Jurnal Studia Legalia Open access 30 May 2023 1
40 A 1000× Improvement of the Processor-Memory Gap Zvi Or-Bach · ˜The œfrontiers collection Book chapter 2020 1
41 Comparative Study on the Repetitive Unclamped-Inductive-Switching Capability(R-UIS) of 1200V 160mOhm SiC Planar Gate MOSFETs In Hwan Ji, Sauvik Chowdhury, Blake Powell et al. · Materials science forum 19 Jul 2019 1
42 Reliability and Ruggedness of Planar Silicon Carbide MOSFETs Kevin Matocha, In Hwan Ji, Sauvik Chowdhury · Materials science forum 19 Jul 2019 1
43 Evaluation of the Effect of Ultraviolet Light Excitation during Characterization of Silicon Carbide Epitaxial Layers Hrishikesh Das, Swapna G. Sunkari, Oener Akdik et al. · Materials science forum 5 Jun 2018 1
44 The PAL20RA10 Story - The Customization of a Standard Product Marc Baker, Vincent J. Coli · IEEE Micro Oct 1986 1
45 Increasing the efficiency of technological solutions at the development of watered building sand deposits Oleksii Lozhnikov, Artem Pavlychenko, Roman Koval · E3S Web of Conferences Conference paperOpen access 2026 0
46 GH10-10 Nonlinear Thermal Model Capability & 3W SatCom HPA Samira Bouzid-Driad, Frederic Drillet, Christophe Chang et al. Conference paper 7 Jun 2026 0
47 Investigation of trapping dynamics and defect evolution in 150 nm GaN-on-SiC HEMTs under early X-band RF stress El Mehdi Meknassi, Niemat Moultif, S. Duguay et al. · Journal of Semiconductors May 2026 0
48 Experimental evaluation of PV performance degradation following damage for hourly generation forecasting Suleiman Qasim Abu-Ein, Mohammad S. Khrisat, Mohamed Qawaqzeh et al. · Frontiers in Energy Research Open access 13 May 2026 0
49 Design of Highly Stackable Charge Trap-Based 3D DRAM Hyeongyu Kim, Dabok Lee, Hyun-Sik Choi et al. Conference paper 27 Oct 2025 0
50 Per una ricomprensione social della posture littéraire: Édouard Louis e Jonathan Bazzi Beatrice Latini · ENTHYMEMA Open access 2 Jan 2023 0

Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.