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Institution · Nanopolis Suzhou (China)

Most cited papers from Nanopolis Suzhou (China)

Nanopolis Suzhou (China)

What are the most cited papers from Nanopolis Suzhou (China)?

The most cited paper from Nanopolis Suzhou (China) is "Recent Advances in GaN‐Based Power HEMT Devices" (Jiaqi He, Wei‐Chih Cheng, Qing Wang et al., 2021), with 258 citations. Next come "p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si" (157) and "Regrowth-Free GaN-Based Complementary Logic on a Si Substrate" (145).

Showing 50 of 60 papers. Every paper with more than 9 citations is listed.

Most cited papers, sortable by citations and release date
#Paper
1 Recent Advances in GaN‐Based Power HEMT Devices Jiaqi He, Wei‐Chih Cheng, Qing Wang et al. · Advanced Electronic Materials 29 Jan 2021 258
2 p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si Nadim Chowdhury, Jori Lemettinen, Qingyun Xie et al. · IEEE Electron Device Letters 13 May 2019 157
3 Regrowth-Free GaN-Based Complementary Logic on a Si Substrate Nadim Chowdhury, Qingyun Xie, Mengyang Yuan et al. · IEEE Electron Device Letters 9 Apr 2020 145
4 Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors Ning Xu, Ronghui Hao, Fu Chen et al. · Applied Physics Letters 8 Oct 2018 122
5 10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes Ming Xiao, Yunwei Ma, Kai Liu et al. · IEEE Electron Device Letters 30 Apr 2021 116
6 3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination Ming Xiao, Yunwei Ma, Kai Cheng et al. · IEEE Electron Device Letters 30 Jun 2020 104
7 Multi-channel nanowire devices for efficient power conversion Luca Nela, Jun Ma, C. Erine et al. · Nature Electronics Open access 25 Mar 2021 103
8 720-V/0.35-m $\Omega \cdot$ cm2Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers Yuhao Zhang, Mengyang Yuan, Nadim Chowdhury et al. · IEEE Electron Device Letters 26 Mar 2018 102
9 1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current Huaxing Jiang, Qifeng Lyu, Renqiang Zhu et al. · IEEE Transactions on Electron Devices 22 Dec 2020 91
10 820-V GaN-on-Si Quasi-Vertical p-i-n Diodes With BFOM of 2.0 GW/cm2 Riyaz Abdul Khadar, Chao Liu, Liyang Zhang et al. · IEEE Electron Device Letters Open access 15 Jan 2018 87
11 AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g m and Gain Linearity Hao Lu, Bin Hou, Ling Yang et al. · IEEE Transactions on Electron Devices 31 May 2021 70
12 A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices Shuxun Lin, Maojun Wang, Fei Sang et al. · IEEE Electron Device Letters 25 Feb 2016 70
13 Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance Jun Ma, Catherine Erine, Xiang Fang Peng et al. · Applied Physics Letters Open access 10 Dec 2018 68
14 Quercetin Loaded Nanostructured Lipid Carrier for Food Fortification: Preparation, Characterization and in vitro Study Shilei Ni, Rui Sun, Guodong Zhao et al. · Journal of Food Process Engineering 15 Sep 2014 64
15 Multi-Channel Monolithic-Cascode HEMT (MC2-HEMT): A New GaN Power Switch up to 10 kV Ming Xiao, Yunwei Ma, Zhonghao Du et al. Conference paper 11 Dec 2021 60
16 Characterization of 880 V Normally Off GaN MOSHEMT on Silicon Substrate Fabricated With a Plasma-Free, Self-Terminated Gate Recess Process Ming Tao, Shaofei Liu, Bing Lei Xie et al. · IEEE Transactions on Electron Devices 5 Mar 2018 59
17 Activity regulation and applications of metal–organic framework‐based nanozymes Fang Ge, Shouxin Bao, Gen-Xiu Zhou et al. · Rare Metals 7 Sep 2023 58
18 Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN Ming Xiao, Zhonghao Du, Jinqiao Xie et al. · Applied Physics Letters 3 Feb 2020 55
19 Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance Jun Ma, Georgios E. Kampitsis, Xiang Fang Peng et al. · IEEE Electron Device Letters Open access 18 Dec 2018 55
20 Tri-gate GaN junction HEMT Yunwei Ma, Ming Xiao, Zhonghao Du et al. · Applied Physics Letters 5 Oct 2020 48
21 Strain Release in GaN Epitaxy on 4° Off‐Axis 4H‐SiC Sirui Feng, Zheyang Zheng, Yan Cheng et al. · Advanced Materials 2 Apr 2022 47
22 First Demonstration of a Self-Aligned GaN p-FET Nadim Chowdhury, Qingyun Xie, Mengyang Yuan et al. Conference paperOpen access Dec 2019 47
23 Wafer-scale organic-on-III-V monolithic heterogeneous integration for active-matrix micro-LED displays Lei Han, Simon Ogier, Jun Li et al. · Nature Communications Open access Nov 2023 46
24 3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure Ru Xu, Peng Chen, Menghan Liu et al. · IEEE Electron Device Letters 4 Jan 2021 44
25 Field-induced Acceptor Ionization in Enhancement-mode GaN p-MOSFETs Nadim Chowdhury, Qingyun Xie, John Niroula et al. Conference paper 12 Dec 2020 41
26 5 kV Multi-Channel AlGaN/GaN Power Schottky Barrier Diodes with Junction-Fin-Anode Ming Xiao, Yunwei Ma, Zhonghao Du et al. Conference paper 12 Dec 2020 38
27 p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering Guangnan Zhou, Fanming Zeng, Rongyu Gao et al. · IEEE Transactions on Electron Devices 17 Mar 2022 37
28 Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT Ronghui Hao, Ning Xu, Guohao Yu et al. · IEEE Transactions on Electron Devices 26 Feb 2018 34
29 Robust Avalanche in 1.7 kV Vertical GaN Diodes With a Single-Implant Bevel Edge Termination Ming Xiao, Yifan Wang, Ruizhe Zhang et al. · IEEE Electron Device Letters 14 Aug 2023 33
30 First Demonstration of Vertical Superjunction Diode in GaN Ming Xiao, Yunwei Ma, Zhonghao Du et al. · 2022 International Electron Devices Meeting (IEDM) Conference paper 3 Dec 2022 33
31 High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension Jiawei Cui, Yanlin Wu, Junjie Yang et al. · IEEE Transactions on Electron Devices 7 Feb 2024 31
32 Enhancement-Mode GaN Monolithic Bidirectional Switch With Breakdown Voltage Over 3.3 kV Yijin Guo, Yuan Qin, Ming Xiao et al. · IEEE Electron Device Letters 4 Feb 2025 28
33 1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance Jun Ma, Catherine Erine, Minghua Zhu et al. Conference paperOpen access Dec 2019 28
34 Demonstration of a 2 kV Al0.85Ga0.15N Schottky Barrier Diode With Improved On-Current and Ideality Factor Yanni Zhang, Jincheng Zhang, Zhihong Liu et al. · IEEE Electron Device Letters 21 Jan 2020 26
35 An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION / IOFF ratio and steep subthreshold swing Huake Su, Tao Zhang, Shengrui Xu et al. · Applied Physics Letters 15 Apr 2024 25
36 Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at V d = 12 V Jingshu Guo, Jiejie Zhu, Siyu Liu et al. · IEEE Electron Device Letters 23 Feb 2023 25
37 Au-Free Al₀.₄Ga₀.₆N/Al₀.₁Ga₀.₉N HEMTs on Silicon Substrate With High Reverse Blocking Voltage of 2 kV Yinhe Wu, Weihang Zhang, Jincheng Zhang et al. · IEEE Transactions on Electron Devices 12 Jul 2021 23
38 Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse Luca Nela, Halil Kerim Yildirim, Catherine Erine et al. · IEEE Electron Device Letters Open access 17 Nov 2020 23
39 Dislocation-assisted electron and hole transport in GaN epitaxial layers Yixu Yao et al. · Nature Communications Open access 12 Jul 2025 22
40 Demonstration of 1200-V E-Mode GaN-on-Sapphire Power Transistor With Low Dynamic ON-Resistance Based on Active Passivation Technique Jiawei Cui, Maojun Wang, Yanlin Wu et al. · IEEE Electron Device Letters 8 Dec 2023 22
41 Implanted Guard Ring Edge Termination With Avalanche Capability for Vertical GaN Devices Yifan Wang, Matthew Porter, Ming Xiao et al. · IEEE Transactions on Electron Devices Open access 13 Oct 2023 21
42 Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process Pao-Chuan Shih, Girish Rughoobur, Kai Cheng et al. · IEEE Electron Device Letters Open access 24 Feb 2021 21
43 Improved Breakdown Voltage and Low Damage E-Mode Operation of AlON/AlN/GaN HEMTs Using Plasma Oxidation Treatment Siyu Liu, Jiejie Zhu, Jingshu Guo et al. · IEEE Electron Device Letters 31 Aug 2022 19
44 Investigation on the Influence of Ohmic Structure on Channel-to-Channel Coupling Effect in InAlN/GaN Double Channel HEMTs Ling Yang, Hao Lu, Meng Zhang et al. · IEEE Journal of the Electron Devices Society Open access 2022 18
45 5.3A/400V normally‐off AlGaN/GaN‐on‐Si MOS‐HEMT with high threshold voltage and large gate swing Zhihua Dong, Shuxin Tan, Yong Kui Cai et al. · Electronics Letters Open access 2013 17
46 Performance Estimation of GaN CMOS Technology Nadim Chowdhury, Jaeyoung Jung, Qingyun Xie et al. Conference paper 20 Jun 2021 16
47 10 kV E-mode GaN HEMT: Physics for breakdown voltage upscaling Yijin Guo, Yuan Qin, Matthew Porter et al. · Applied Physics Letters 28 Jul 2025 15
48 HyFET—A GaN/SiC Hybrid Field-Effect Transistor Sirui Feng, Zheyang Zheng, Yuru Wang et al. Conference paper 9 Dec 2023 15
49 Fully-Vertical GaN-on-SiC Schottky Barrier Diode: Role of Conductive Buffer Structure Yanjun Li, Shu Yang, Kai Liu et al. · IEEE Transactions on Electron Devices 19 Dec 2022 15
50 Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement Bin Dong, Jie Lin, Ning Wang et al. · AIP Advances Open access Sep 2016 15

Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.