Institution · Nitek (United States)
Most cited papers from Nitek (United States)
What are the most cited papers from Nitek (United States)?
The most cited paper from Nitek (United States) is "High-Temperature Performance of AlGaN/GaN MOSHEMT With $\hbox{SiO}_{2}$ Gate Insulator Fabricated on Si (111) Substrate" (Fatima Husna, Mohamed Lachab, Mahbuba Sultana et al., 2012), with 94 citations. Next come "First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on m-Plane Sapphire with AlGaN Multiple Quantum Wells" (44) and "Ohmic Contact to High-Aluminum-Content AlGaN Epilayers" (28).
Showing 26 of 26 papers. Every paper is listed.
| # | Paper | ||
|---|---|---|---|
| 1 | High-Temperature Performance of AlGaN/GaN MOSHEMT With $\hbox{SiO}_{2}$ Gate Insulator Fabricated on Si (111) Substrate Fatima Husna, Mohamed Lachab, Mahbuba Sultana et al. · IEEE Transactions on Electron Devices | 21 Jul 2012 | 94 |
| 2 | First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on m-Plane Sapphire with AlGaN Multiple Quantum Wells Krishnan Balakrishnan, Vinod Adivarahan, Qhalid Fareed et al. · Japanese Journal of Applied Physics | Apr 2010 | 44 |
| 3 | Ohmic Contact to High-Aluminum-Content AlGaN Epilayers Surendra Srivastava, Seong Mo Hwang, Monirul Islam et al. · Journal of Electronic Materials | 31 Aug 2009 | 28 |
| 4 | MOCVD growth of semipolar AlxGa1−xN on m‐plane sapphire for applications in deep‐ultraviolet light emitters K. Balakrishnan, Mohamed Lachab, Hung‐Chi Chen et al. · physica status solidi (a) | 13 Jul 2011 | 27 |
| 5 | Transport properties of SiO2/AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors on SiC substrate Mohamed Lachab, Mahbuba Sultana, Qhalid Fareed et al. · Journal of Physics D Applied Physics | 11 Mar 2014 | 22 |
| 6 | Status of the DeeMe Experiment, an Experimental Search for $\mu$-$e$ Conversion at J-PARC MLF N. Teshima | 11 Jun 2020 | 20 |
| 7 | ITER Dynamic Tritium Inventory Modeling Code Ioana-R. Cristescu, Lothar Dörr, Anthony Busigin et al. · Fusion Science & Technology | Aug 2005 | 20 |
| 8 | Enhancement of light extraction efficiency in sub-300nm nitride thin-film flip-chip light-emitting diodes Mohamed Lachab, Fatima Asif, Baowei Zhang et al. · Solid-State Electronics | 5 Sep 2013 | 19 |
| 9 | High voltage operation of field‐plated AlInN HEMTs Qhalid Fareed, Ahmad Houssam Tarakji, Joseph Dion et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics | 9 Jun 2011 | 17 |
| 10 | Structural Characterization of Highly Conducting AlGaN (x > 50%) for Deep-Ultraviolet Light-Emitting Diode Joseph Dion, Qhalid Fareed, Bin Zhang et al. · Journal of Electronic Materials | 5 Jan 2011 | 17 |
| 11 | Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2gate dielectric Mohamed Lachab, Mahbuba Sultana, H Fatima et al. · Semiconductor Science and Technology | 24 Oct 2012 | 16 |
| 12 | Deep ultraviolet photopumped stimulated emission from partially relaxed AlGaN multiple quantum well heterostructures grown on sapphire substrates Fatima Asif, Mohamed Lachab, Antwon Coleman et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena | 24 Oct 2014 | 13 |
| 13 | Reliability issues in AlGaN based deep ultraviolet light emitting diodes Asif Khan, Seongmo Hwang, J. E. Lowder et al. · IEEE International Reliability Physics Symposium proceedings | Apr 2009 | 12 |
| 14 | Dislocation reduction in high Al‐content AlGaN films for deep ultraviolet light emitting diodes Iftikhar Ahmad, Balakrishnan Krishnan, Bin Zhang et al. · physica status solidi (a) | Jun 2011 | 10 |
| 15 | Pseudomorphic AlxGa1‐xN MQW based deep ultraviolet light emitting diodes over sapphire Fatima Asif, Hung‐Chi Chen, Antwon Coleman et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics | Feb 2014 | 7 |
| 16 | Thermal Characterization of Discrete Device Layers in AlxGa1−xN Based Ultraviolet Light Emitting Diodes Shweta Natarajan, Bobby Gene Watkins, Vinod Adivarahan et al. | 3 Mar 2012 | 4 |
| 17 | Radioactive waste recovery and enrichment I. Bonnett, Anthony Busigin, Andrew G. Lashford et al. · Journal of Labelled Compounds and Radiopharmaceuticals | Apr 2007 | 3 |
| 18 | Darlington Tritium Removal Facility and Station Upgrading Plant Dynamic Process Simulation Anthony Busigin, G. I. D. Williams, Tse Chiu Wong et al. · Fusion Science & Technology | Aug 2008 | 3 |
| 19 | UAV-UGV imagery for disaster scenario mapping: aerial-terrestrial data fusion and comparison Ettore Potente, Cosimo Cagnazzo, Andreas Vött et al. · Rendiconti online della Società Geologica Italiana | Nov 2021 | 2 |
| 20 | Pulsed modulation doping of AlxGa1‐xN (x>0.6) AlGaN epilayers for deep UV optoelectronic devices Hung‐Chi Chen, Iftikhar Ahmad, Bin Zhang et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics | Feb 2014 | 1 |
| 21 | Development of Hydrolysis Prediction System Using Reaction Analysis with Quantum Chemical Calculation Motoki Nakajima, Yuki Sakuratani, Yoshiyuki Noguchi et al. · Journal of Computer Aided Chemistry | 2007 | 1 |
| 22 | Quasi-pseudomorphic AlGaN based deep ultraviolet LEDs over sapphire substrates Asif Khan, Fatema Asif, Mohamed Lachab | Jul 2015 | 1 |
| 23 | Low-Cost Small-Scale Water Detritiation System Musharaf Rabbani, Anthony Busigin, Haiqin Mao et al. · Fusion Science & Technology | 17 Apr 2026 | 0 |
| 24 | Ⅱ. 破壊解析および未然防止 (Failure Analysis and Prevention) 並びにカラー＆アピアランス (Color & Appearance) のセッションを中心に Hiromi Kita · Seikei-Kakou | 20 Jul 2003 | 0 |
| 25 | ZİFİR KARANIN MAVİSİ ADLI ÖYKÜDE TEKİNSİZLİK VE KURBAN RİTÜELİ Tülin Arseven · HİKMET-Akademik Edebiyat Dergisi (Journal Of Academic Literature) | 6 Nov 2020 | 0 |
| 26 | Heavy Water Upgrader Dynamic Simulation (UGDYNSIM) Krishna Kalyanam, Sudhir K. Sood, F. Fusca et al. · Canadian Nuclear Society Proceedings | 20 Dec 2024 | 0 |
Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.