Institution · OSRAM (Germany)
Most cited papers from OSRAM (Germany)
What are the most cited papers from OSRAM (Germany)?
The most cited paper from OSRAM (Germany) is "nextnano: General Purpose 3-D Simulations" (Stefan Birner, Tobias Zibold, Till F. M. Andlauer et al., 2007), with 663 citations. Next come "New thermoelectric components using microsystem technologies" (375) and "Sr[Li2Al2O2N2]:Eu2+—A high performance red phosphor to brighten the future" (343).
Showing 50 of 61 papers. Every paper with more than 74 citations is listed.
| # | Paper | ||
|---|---|---|---|
| 1 | nextnano: General Purpose 3-D Simulations Stefan Birner, Tobias Zibold, Till F. M. Andlauer et al. · IEEE Transactions on Electron Devices | 29 Aug 2007 | 663 |
| 2 | New thermoelectric components using microsystem technologies H. Böttner, Joachim Nurnus, Alexander A. Gavrikov et al. · Journal of Microelectromechanical Systems | Jun 2004 | 375 |
| 3 | Sr[Li2Al2O2N2]:Eu2+—A high performance red phosphor to brighten the future Gregor J. Hoerder, Markus Seibald, Dominik Baumann et al. · Nature Communications | 23 Apr 2019 | 343 |
| 4 | High-Power and High-Efficiency InGaN-Based Light Emitters Ansgar Laubsch, Matthias Sabathil, Johannes Baur et al. · IEEE Transactions on Electron Devices | 9 Dec 2009 | 341 |
| 5 | Acute exposure to evening blue‐enriched light impacts on human sleep Sarah L. Chellappa, Roland Steiner, Peter Oelhafen et al. · Journal of Sleep Research | 20 Mar 2013 | 290 |
| 6 | Deep Learning in Medical Image Analysis and Multimodal Learning for Clinical Decision Support Danail V. Stoyanov, Zeike A. Taylor, Gustavo Carneiro et al. · Lecture notes in computer science | 2018 | 284 |
| 7 | Light extraction and optical loss mechanisms in organic light-emitting diodes: Influence of the emitter quantum efficiency Stefan Nowy, Benjamin C. Krummacher, Jörg Frischeisen et al. · Journal of Applied Physics | 15 Dec 2008 | 264 |
| 8 | Photonic crystal LEDs – designing light extraction Christopher Wiesmann, Krister Bergenek, Norbert Linder et al. · Laser & Photonics Review | 31 Dec 2008 | 261 |
| 9 | On the importance of radiative and Auger losses in GaN-based quantum wells J. Hader, Jerome V. Moloney, B. Pasenow et al. · Applied Physics Letters | 30 Jun 2008 | 239 |
| 10 | Recent progress in solution processable organic light emitting devices Franky F. So, Benjamin C. Krummacher, Mathew K. Mathai et al. · Journal of Applied Physics | Nov 2007 | 202 |
| 11 | Highly efficient white organic light-emitting diode Benjamin C. Krummacher, Vi‐En Choong, Mathew K. Mathai et al. · Applied Physics Letters | 13 Mar 2006 | 197 |
| 12 | Excited-state vibrational dynamics toward the polaron in methylammonium lead iodide perovskite Myeongkee Park, Amanda J. Neukirch, Sebastian E. Reyes‐Lillo et al. · Nature Communications | 22 Jun 2018 | 192 |
| 13 | High brightness AlGaInP light-emitting diodes Klaus P. Streubel, Norbert Linder, Robert J. Wirth et al. · IEEE Journal of Selected Topics in Quantum Electronics | 2002 | 185 |
| 14 | Measurement of specimen thickness and composition in AlxGa1-xN/GaN using high-angle annular dark field images Andreas Rosenauer, Katharina Ines Gries, Knut Müller‐Caspary et al. · Ultramicroscopy | 15 May 2009 | 180 |
| 15 | Composition mapping in InGaN by scanning transmission electron microscopy Andreas Rosenauer, Thorsten Mehrtens, Knut Müller‐Caspary et al. · Ultramicroscopy | 2 May 2011 | 177 |
| 16 | Oriented phosphorescent emitters boost OLED efficiency Michael Flämmich, Jörg Frischeisen, Daniel S. Setz et al. · Organic Electronics | Jul 2011 | 175 |
| 17 | Chemical vapor synthesis and luminescence properties of nanocrystalline cubic Y2O3:Eu Amrei-Pauline Konrad, Torsten Fries, A. Gahn et al. · Journal of Applied Physics | 15 Sep 1999 | 168 |
| 18 | Ceramic Phosphors for Light Conversion in LEDs Madis Raukas, John F. Kelso, Yi Zheng et al. · ECS Journal of Solid State Science and Technology | 22 Dec 2012 | 163 |
| 19 | Influence of blue-enriched classroom lighting on students׳ cognitive performance Oliver Keis, Hannah B. Helbig, Judith Streb et al. · Trends in Neuroscience and Education | Sep 2014 | 150 |
| 20 | 500 nm electrically driven InGaN based laser diodes Desirée Queren, Adrian Avramescu, G. Brüderl et al. · Applied Physics Letters | 23 Feb 2009 | 149 |
| 21 | Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells Werner Bergbauer, Martin Straßburg, Ch. Kölper et al. · Nanotechnology | 6 Jul 2010 | 148 |
| 22 | The nanorod approach: GaN NanoLEDs for solid state lighting A. Waag, Xue Wang, Sönke Fündling et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics | 9 May 2011 | 146 |
| 23 | 8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm S. Lutgen, Tony Albrecht, Peter Brick et al. · Applied Physics Letters | 22 May 2003 | 141 |
| 24 | True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power onc-Plane GaN Adrian Avramescu, Teresa Lermer, Jens Müller et al. · Applied Physics Express | 4 Jun 2010 | 140 |
| 25 | High mobility hydrogenated zinc oxide thin films Diana Gaspar, L. G. R. Pereira, Kai Gehrke et al. · Solar Energy Materials and Solar Cells | 2 Feb 2017 | 137 |
| 26 | A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes Matteo Meneghini, Nicola Trivellin, Gaudenzio Meneghesso et al. · Journal of Applied Physics | Dec 2009 | 129 |
| 27 | Spectroscopic detection and state preparation of a single praseodymium ion in a crystal Tobias Utikal, Emanuel Eichhammer, Leif Bo Petersen et al. · Nature Communications | 11 Apr 2014 | 126 |
| 28 | Polarity and Its Influence on Growth Mechanism during MOVPE Growth of GaN Sub-micrometer Rods S. F. Li, S. Fuendling, X. Wang et al. · Crystal Growth & Design | 7 Mar 2011 | 125 |
| 29 | Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence Michael Binder, Anna Nirschl, R. Zeisel et al. · Applied Physics Letters | 12 Aug 2013 | 124 |
| 30 | Luminescence of bulk and nanocrystalline cubic yttria Amrei-Pauline Konrad, Ulrich Herr, R. Tidecks et al. · Journal of Applied Physics | Oct 2001 | 123 |
| 31 | InGaN laser diodes with 50 mW output power emitting at 515 nm Adrian Avramescu, Teresa Lermer, Jens Müller et al. · Applied Physics Letters | 17 Aug 2009 | 121 |
| 32 | Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes Ilya E. Titkov, S. Yu. Karpov, Amit Yadav et al. · IEEE Journal of Quantum Electronics | 25 Sep 2014 | 120 |
| 33 | Wavelength‐dependent determination of the recombination rate coefficients in single‐quantum‐well GaInN/GaN light emitting diodes Dario Schiavon, Michael Binder, Matthias Peter et al. · physica status solidi (b) | 26 Nov 2012 | 119 |
| 34 | On the origin of IQE‐‘droop’ in InGaN LEDs Ansgar Laubsch, Matthias Sabathil, Werner Bergbauer et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics | 7 May 2009 | 116 |
| 35 | Temperature-independent field-induced charge separation at doped organic/organic interfaces: Experimental modeling of electrical properties Michael Kröger, Sami Hamwi, Jens Meyer et al. · Physical Review B | 19 Jun 2007 | 107 |
| 36 | Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap Felix Nippert, S. Yu. Karpov, Gordon Callsen et al. · Applied Physics Letters | 17 Oct 2016 | 106 |
| 37 | Evidence for non-isotropic emitter orientation in a red phosphorescent organic light-emitting diode and its implications for determining the emitter’s radiative quantum efficiency Tobias D. Schmidt, Daniel S. Setz, Michael Flämmich et al. · Applied Physics Letters | 17 Oct 2011 | 106 |
| 38 | Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes Matthias Auf der Maur, Bastian Galler, Ines Pietzonka et al. · Applied Physics Letters | 29 Sep 2014 | 104 |
| 39 | Influence of the interface strength on the mechanical properties of discontinuous tungsten fiber-reinforced tungsten composites produced by field assisted sintering technology Yuemiao Mao, J.W. Coenen, J. Riesch et al. · Composites Part A Applied Science and Manufacturing | 31 Jan 2018 | 99 |
| 40 | Electronic Ballasts for Metal Halide Lamps Hans-Juergen Faehnrich, Erhard Rasch · Journal of the Illuminating Engineering Society | Jul 1988 | 94 |
| 41 | UA-DETRAC 2017: Report of AVSS2017 & IWT4S Challenge on Advanced Traffic Monitoring Siwei Lyu et al. | Aug 2017 | 93 |
| 42 | New developments in green LEDs Matthias Peter, Ansgar Laubsch, Werner Bergbauer et al. · physica status solidi (a) | 30 Mar 2009 | 92 |
| 43 | GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors Yu Feng, Shengbo Yao, Friedhard Römer et al. · Nanotechnology | 9 Jan 2017 | 90 |
| 44 | Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates Bastian Galler, Philipp Drechsel, R. Monnard et al. · Applied Physics Letters | 24 Sep 2012 | 90 |
| 45 | Review—Visible LEDs: More than Efficient Light Tetsuya Taki, Martin Straßburg · ECS Journal of Solid State Science and Technology | 25 Nov 2019 | 88 |
| 46 | The Simple Way to Solution‐Processed Multilayer OLEDs – Layered Block‐Copolymer Networks by Living Cationic Polymerization Anne Köhnen, Nina Riegel, Jonas H.‐W. M. Kremer et al. · Advanced Materials | 23 Dec 2008 | 88 |
| 47 | High-Temperature Degradation of GaN LEDs Related to Passivation Matteo Meneghini, Lorenzo-Roberto Trevisanello, Ulrich Zehnder et al. · IEEE Transactions on Electron Devices | Dec 2006 | 88 |
| 48 | Identification of aging mechanisms in the optical and electrical characteristics of light-emitting diodes Otto L. J. Pursiainen, Norbert Linder, Arndt Jaeger et al. · Applied Physics Letters | 29 Oct 2001 | 88 |
| 49 | Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes Francesca Rossi, Maura Pavesi, Matteo Meneghini et al. · Journal of Applied Physics | Mar 2006 | 88 |
| 50 | Group III nitride core–shell nano‐ and microrods for optoelectronic applications Martin Mandl, Xue Wang, Tilman Schimpke et al. · physica status solidi (RRL) - Rapid Research Letters | 23 Jul 2013 | 87 |
Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.