Science Explorer Back to mapMap
Discussion
Institution · Qorvo (United States)

Most cited papers from Qorvo (United States)

Qorvo (United States)

What are the most cited papers from Qorvo (United States)?

The most cited paper from Qorvo (United States) is "The 2018 GaN power electronics roadmap" (Hiroshi Amano et al., 2018), with 1,322 citations. Next come "From Microwave Acoustic Filters to Millimeter-Wave Operation and New Applications" (230) and "Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices" (171).

Showing 50 of 60 papers. Every paper with more than 27 citations is listed.

Most cited papers, sortable by citations and release date
#Paper
1 The 2018 GaN power electronics roadmap Hiroshi Amano et al. · Journal of Physics D Applied Physics Open access 26 Mar 2018 1,322
2 From Microwave Acoustic Filters to Millimeter-Wave Operation and New Applications Amelie Hagelauer, Rich Ruby, Shogo Inoue et al. · IEEE Journal of Microwaves Open access 20 Dec 2022 230
3 Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices Luke Yates, Jonathan Anderson, Xing Gu et al. · ACS Applied Materials & Interfaces 25 Jun 2018 171
4 Microwave Acoustic Wave Devices: Recent Advances on Architectures, Modeling, Materials, and Packaging Amelie Hagelauer, Gernot Fattinger, C.C.W. Ruppel et al. · IEEE Transactions on Microwave Theory and Techniques 31 Jul 2018 165
5 Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling Yan Zhou, J. Anaya, James W. Pomeroy et al. · ACS Applied Materials & Interfaces 13 Sep 2017 160
6 BAW Filters for 5G Bands Robert Aigner, Gernot Fattinger, Michael Schaefer et al. Conference paper Dec 2018 145
7 ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance Andrew J. Green, J. Gillespie, Robert Fitch et al. · IEEE Electron Device Letters Open access 8 May 2019 132
8 W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs Brian Romanczyk, Xun Zheng, Matthew Guidry et al. · IEEE Electron Device Letters 17 Jan 2020 122
9 Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs Jin Chen, Yevgeniy S. Puzyrev, Rong Jiang et al. · IEEE Transactions on Nuclear Science Dec 2015 112
10 Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes Wenshen Li, Kazuki Nomoto, Manyam Pilla et al. · IEEE Transactions on Electron Devices 21 Feb 2017 106
11 3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination Ming Xiao, Yunwei Ma, Kai Cheng et al. · IEEE Electron Device Letters 30 Jun 2020 104
12 High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination Jingshan Wang, Lina Cao, Jinqiao Xie et al. · Applied Physics Letters Open access 9 Jul 2018 99
13 RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band Andrew J. Green, Neil Moser, Nicholas Carl Miller et al. · IEEE Electron Device Letters Open access 30 Jun 2020 87
14 A Novel 100 MHz–45 GHz Input-Termination-Less Distributed Amplifier Design With Low-Frequency Low-Noise and High Linearity Implemented With A 6 Inch $0.15~ {\mu }\text{m}$ GaN-SiC Wafer Process Technology Kevin W. Kobayashi, Dan Denninghoff, Dain Miller · IEEE Journal of Solid-State Circuits 27 May 2016 84
15 Spurious Free SAW Resonators on Layered Substrate with Ultra-High Q, High Coupling and Small TCF Shogo Inoue, M. Solal Conference paper Oct 2018 82
16 Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel Wenshen Li, Huili Grace Xing, Kazuki Nomoto et al. · IEEE Transactions on Electron Devices May 2018 72
17 LT/Quartz Layered SAW Substrate with Suppressed Transverse Mode Generation Shogo Inoue, M. Solal Conference paper 7 Sep 2020 71
18 A Review of 5G Power Amplifier Design at cm‐Wave and mm‐Wave Frequencies Donald Y.C. Lie, Jill C. Mayeda, Yuan-Fang Li et al. · Wireless Communications and Mobile Computing Open access 2018 71
19 A Three-Stage 18.5–24-GHz GaN-on-SiC 4 W 40% Efficient MMIC PA Maxwell Robert Duffy, Gregor Lasser, Guillermo Nevett et al. · IEEE Journal of Solid-State Circuits 11 Jul 2019 64
20 Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiNx Passivation Shahadat Hasan Sohel, Mohammad Wahidur Rahman, Andy Xie et al. · IEEE Electron Device Letters 5 Nov 2019 62
21 Multi-Channel Monolithic-Cascode HEMT (MC2-HEMT): A New GaN Power Switch up to 10 kV Ming Xiao, Yunwei Ma, Zhonghao Du et al. Conference paper 11 Dec 2021 60
22 Activation of buried p-GaN in MOCVD-regrown vertical structures Wenshen Li, Kazuki Nomoto, Kevin Lee et al. · Applied Physics Letters 6 Aug 2018 56
23 Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN Ming Xiao, Zhonghao Du, Jinqiao Xie et al. · Applied Physics Letters 3 Feb 2020 55
24 X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors Shahadat Hasan Sohel, Andy Xie, Edward Beam et al. · IEEE Electron Device Letters 8 Oct 2018 52
25 Determination of thickness and bulk sound velocities of isotropic plates using zero-group-velocity Lamb waves Clemens Grünsteidl, Thomas Berer, Mike Hettich et al. · Applied Physics Letters Open access 18 Jun 2018 51
26 Polarization Engineering of AlGaN/GaN HEMT With Graded InGaN Sub-Channel for High-Linearity X-Band Applications Shahadat Hasan Sohel, Andy Xie, Edward Beam et al. · IEEE Electron Device Letters 13 Feb 2019 50
27 Breakdown Voltage Enhancement in ScAlN/GaN High-Electron-Mobility Transistors by High-k Bismuth Zinc Niobate Oxide Junao Cheng, Mohammad Wahidur Rahman, Andy Xie et al. · IEEE Transactions on Electron Devices 9 Jun 2021 43
28 A Monolithically BST-Integrated $K_{a}$ -Band Beamsteerable Reflectarray Antenna Kalyan K. Karnati, Michael E. Trampler, Xun Gong · IEEE Transactions on Antennas and Propagation Open access 9 Nov 2016 42
29 High Efficiency 5W/10W 32 - 38GHz Power Amplifier MMICs Utilizing Advanced 0.15µm GaN HEMT Technology Shuoqi Chen, Sabyasachi Nayak, Charles Forrest Campbell et al. Conference paper Oct 2016 42
30 1-D Reconfigurable Pseudo-Doherty Load Modulated Balanced Amplifier With Intrinsic VSWR Resilience Across Wide Bandwidth Jiachen Guo, Yuchen Cao, Kenle Chen · IEEE Transactions on Microwave Theory and Techniques 31 Jan 2023 40
31 Acoustic Wave Transversal Filter for 5G N77 Band Jordi Mateu, Yazid Yusuf, Rafael Perea-Robles et al. · IEEE Transactions on Microwave Theory and Techniques Open access 8 Jul 2021 40
32 Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching Chris Youtsey, Robert F. McCarthy, Rekha Reddy et al. · physica status solidi (b) 27 Apr 2017 40
33 60-GHz LTCC Patch Antenna Array With an Integrated EBG Structure for Gain Enhancement William E. McKinzie, Deepukumar M. Nair, Bradley A. Thrasher et al. · IEEE Antennas and Wireless Propagation Letters 2016 40
34 Origin of leakage current in vertical GaN devices with nonplanar regrown p-GaN Ming Xiao, Xiaodong Yan, Jinqiao Xie et al. · Applied Physics Letters 2 Nov 2020 39
35 Microlens fabrication by 3D electron beam lithography combined with thermal reflow technique V. Grigaliūnas, Algirdas Lazauskas, Dalius Jucius et al. · Microelectronic Engineering 16 Jul 2016 39
36 5 kV Multi-Channel AlGaN/GaN Power Schottky Barrier Diodes with Junction-Fin-Anode Ming Xiao, Yunwei Ma, Zhonghao Du et al. Conference paper 12 Dec 2020 38
37 Temperature compensated saw with high quality factor Ben Abbott, Alan A. Chen, Tim Daniel et al. · 2017 IEEE International Ultrasonics Symposium (IUS) Conference paper Sep 2017 37
38 3G – 4G – 5G: How Baw Filter Technology Enables a Connected World Robert Aigner, Gernot Fattinger Conference paper Jun 2019 36
39 Observation of Nonlinear Harmonic Generation of Bulk Modes in SAW Devices M. Solal, Kimmo Kokkonen, Shogo Inoue et al. · IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control 12 May 2017 36
40 High-Field Stress, Low-Frequency Noise, and Long-Term Reliability of AlGaN/GaN HEMTs Jing Chen, Yevgeniy S. Puzyrev, En Xia Zhang et al. · IEEE Transactions on Device and Materials Reliability Open access 15 Jun 2016 36
41 Bias-Dependent Electron Velocity Extracted From N-Polar GaN Deep Recess HEMTs Brian Romanczyk, Matthew Guidry, Xun Zheng et al. · IEEE Transactions on Electron Devices 28 Feb 2020 35
42 Layered SAW Resonators with Near-Zero TCF at Both Resonance and Anti-resonance Shogo Inoue, M. Solal Conference paper Oct 2019 35
43 Evolution of the Nonuniform Distributed Power Amplifier: A Distinguished Microwave Lecture Charles Forrest Campbell · IEEE Microwave Magazine 13 Dec 2018 35
44 Tunable Filters? Reality Check Foreseeable Trends in System Architecture for Tunable RF Filters Robert Aigner · IEEE Microwave Magazine 8 Jul 2015 35
45 Efficient X-Band Transmitter With Integrated GaN Power Amplifier and Supply Modulator Tommaso A. Cappello, Corrado Florian, Daniel Niessen et al. · IEEE Transactions on Microwave Theory and Techniques 5 Mar 2019 34
46 40 W Ka-Band Single and Dual Output GaN MMIC Power Amplifiers on SiC Michael Roberg, Thi Ri Mya Kywe, Matthew Irvine et al. Conference paper Oct 2018 34
47 First Demonstration of Vertical Superjunction Diode in GaN Ming Xiao, Yunwei Ma, Zhonghao Du et al. · 2022 International Electron Devices Meeting (IEDM) Conference paper 3 Dec 2022 33
48 Carrier aggregation and its challenges - or: The golden age for acoustic filters Gernot Fattinger, A. Volatier, Mudar A. Al-Joumayly et al. Conference paper May 2016 33
49 Accurate and efficient analysis of the upward heat flow in InGaP/GaAs HBTs through an automated FEM‐based tool and Design of Experiments Vincenzo d’Alessandro, Antonio Pio Catalano, Lorenzo Codecasa et al. · International Journal of Numerical Modelling Electronic Networks Devices and Fields 28 Nov 2018 31
50 8-Watt Linear Three-Stage GaN Doherty Power Amplifier for 28 GHz 5G Applications David Wöhlert, Bror Peterson, Thi Ri Mya Kywe et al. Conference paper Nov 2019 30

Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.