Science Explorer Back to mapMap
Discussion
Institution · Sensor Electronic Technology (United States)

Most cited papers from Sensor Electronic Technology (United States)

Sensor Electronic Technology (United States)

What are the most cited papers from Sensor Electronic Technology (United States)?

The most cited paper from Sensor Electronic Technology (United States) is "AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%" (Max Shatalov, Wenhong Sun, A. V. Lunev et al., 2012), with 471 citations. Next come "AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor" (385) and "AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates" (359).

Showing 50 of 60 papers. Every paper with more than 48 citations is listed.

Most cited papers, sortable by citations and release date
#Paper
1 AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10% Max Shatalov, Wenhong Sun, A. V. Lunev et al. · Applied Physics Express Open access 11 Jul 2012 471
2 AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor M.A. Khan, Xuhong Hu, G. Sumin et al. · IEEE Electron Device Letters Feb 2000 385
3 AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates M. Asif Khan, Xuhong Hu, Ahmad Houssam Tarakji et al. · Applied Physics Letters 28 Aug 2000 359
4 Deep-Ultraviolet Light-Emitting Diodes Michael S. Shur, Remis Gaska · IEEE Transactions on Electron Devices 30 Nov 2009 311
5 Si 3 N 4 / AlGaN/GaN –metal–insulator–semiconductor heterostructure field–effect transistors Xuhong Hu, A. Koudymov, G. Simin et al. · Applied Physics Letters 22 Oct 2001 255
6 Microbial UV fluence-response assessment using a novel UV-LED collimated beam system Colleen Bowker, Amanda Sain, Max Shatalov et al. · Water Research 14 Dec 2010 193
7 Enhancement mode AlGaN/GaN HFET with selectivelygrown pn junction gate Xuhong Hu, G. Simin, J. Yang et al. · Electronics Letters 13 Apr 2000 189
8 High power AlGaN ultraviolet light emitters Max Shatalov, Wenhong Sun, Rakesh B. Jain et al. · Semiconductor Science and Technology Jun 2014 176
9 Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells Edmundas Kuokštis, Jinwei Yang, G. Simin et al. · Applied Physics Letters 11 Feb 2002 164
10 Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures Andrei V. Muravjov, Dmitry B. Veksler, V. V. Popov et al. · Applied Physics Letters Open access 25 Jan 2010 158
11 AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor G. Simin, Xuhong Hu, Ahmad Houssam Tarakji et al. · Japanese Journal of Applied Physics Open access Nov 2001 121
12 Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates Jun Yang, Alexander Lunev, G. Simin et al. · Applied Physics Letters 17 Jan 2000 121
13 Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors G. Simin, A. Koudymov, Ahmad Houssam Tarakji et al. · Applied Physics Letters 15 Oct 2001 120
14 High-efficiency 269 nm emission deep ultraviolet light-emitting diodes Vinod Adivarahan, Shuai Wu, Jianping Zhang et al. · Applied Physics Letters 21 May 2004 117
15 SiO/sub 2//AlGaN/InGaN/GaN MOSDHFETs G. Simin, A. Koudymov, H. Fatima et al. · IEEE Electron Device Letters Aug 2002 113
16 AlGaN Deep-Ultraviolet Light-Emitting Diodes Jianping Zhang, Xuhong Hu, A. V. Lunev et al. · Japanese Journal of Applied Physics Open access Oct 2005 109
17 AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA Jianping Zhang, Xuhong Hu, Yu. Bilenko et al. · Applied Physics Letters 6 Dec 2004 109
18 Terahertz detection by GaN/AlGaN transistors A. El Fatimy, Stéphane Boubanga Tombet, F. Teppe et al. · Electronics Letters 8 Nov 2006 107
19 Near-band-edge photoluminescence of wurtzite-type AlN Edmundas Kuokštis, Jianping Zhang, Qhalid Fareed et al. · Applied Physics Letters 7 Oct 2002 107
20 Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power Wenhong Sun, Maxim Shatalov, J. Deng et al. · Applied Physics Letters 8 Feb 2010 107
21 GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates M. Asif Khan, J. Yang, W. Knap et al. · Applied Physics Letters 19 Jun 2000 106
22 Surface acoustic wave velocity in single-crystal AlN substrates Gang Bu, Daumantas Čiplys, Michael S. Shur et al. · IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control 2006 102
23 Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes Rahul Kumar Jain, Wenhong Sun, Jinwei Yang et al. · Applied Physics Letters 4 Aug 2008 100
24 7.5 kW/mm 2 current switch using AlGaN/GaNmetal-oxide-semiconductor heterostructure field effect transistors on SiC substrates G. Simin, Xuhong Hu, N. D. Il’inskaya et al. · Electronics Letters 23 Nov 2000 100
25 Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells Vinod Adivarahan, Ashay Chitnis, Jianping Zhang et al. · Applied Physics Letters 17 Dec 2001 96
26 Indium–silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors Vinod Adivarahan, G. Simin, Gintautas Tamulaitis et al. · Applied Physics Letters 17 Sep 2001 93
27 Mechanism of radio-frequency current collapse in GaN–AlGaN field-effect transistors Ahmad Houssam Tarakji, G. Simin, N. D. Il’inskaya et al. · Applied Physics Letters 9 Apr 2001 92
28 AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN Xuhong Hu, J. Deng, Nezih Pala et al. · Applied Physics Letters 24 Feb 2003 92
29 Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors Vinod Adivarahan, Mikhail E. Gaevski, Wenhong Sun et al. · IEEE Electron Device Letters 27 Aug 2003 87
30 Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications M.A. Khan, G. Simin, Jinwei Yang et al. · IEEE Transactions on Microwave Theory and Techniques Feb 2003 86
31 Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN Remis Gaska, C. Chen, Jinwei Yang et al. · Applied Physics Letters 5 Dec 2002 86
32 Pulsed atomic layer epitaxy of quaternary AlInGaN layers Jianping Zhang, Edmundas Kuokštis, Qhalid Fareed et al. · Applied Physics Letters 13 Aug 2001 85
33 Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers Jianping Zhang, Jun Yang, G. Simin et al. · Applied Physics Letters 23 Oct 2000 84
34 Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping Karolis Kazlauskas, Gintautas Tamulaitis, ARTŪRAS ŽUKAUSKAS et al. · Applied Physics Letters 31 Oct 2003 84
35 Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280 nm Wenhong Sun, Vinod Adivarahan, Maxim Shatalov et al. · Japanese Journal of Applied Physics Open access 8 Oct 2004 83
36 Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors Nelson Braga, R. Mickevičius, Remis Gaska et al. · Journal of Applied Physics 17 May 2004 83
37 AlGaN single-quantum-well light-emitting diodes with emission at 285 nm Vinod Adivarahan, Shuai Wu, Ashay Chitnis et al. · Applied Physics Letters 31 Oct 2002 80
38 AlGaN devices and growth of device structures Keith A. Jones, T. Paul Chow, Michael Wraback et al. · Journal of Materials Science 23 Feb 2015 79
39 Efficiency of light emission in high aluminum content AlGaN quantum wells Max Shatalov, Jinwei Yang, Wenhong Sun et al. · Journal of Applied Physics Apr 2009 77
40 Electromechanical coupling coefficient for surface acoustic waves in single-crystal bulk aluminum nitride Gang Bu, Daumantas Čiplys, Michael S. Shur et al. · Applied Physics Letters 21 May 2004 76
41 Visible–blind photoresponse of GaN-based surface acoustic wave oscillator Daumantas Čiplys, Romualdas Rimeika, Michael S. Shur et al. · Applied Physics Letters 18 Mar 2002 76
42 Current-induced degradation of high performance deep ultraviolet light emitting diodes Craig G. Moe, Meredith L. Reed, Gregory A. Garrett et al. · Applied Physics Letters 24 May 2010 72
43 High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells Ashay Chitnis, Ajay Kumar, Maxim Shatalov et al. · Applied Physics Letters 4 Dec 2000 72
44 Deep ultraviolet light‐emitting diodes Xuhong Hu, J. Deng, Jianping Zhang et al. · physica status solidi (a) May 2006 70
45 Millimeter wave emission from GaN high electron mobility transistor Yanqing Deng, Roland Kersting, Jingzhou Xu et al. · Applied Physics Letters 29 Dec 2003 69
46 High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition R. S. Qhalid Fareed, Rahul Kumar Jain, Remis Gaska et al. · Applied Physics Letters 8 Mar 2004 62
47 10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes Yuriy Bilenko, A. V. Lunev, Xuhong Hu et al. · Japanese Journal of Applied Physics Open access 24 Dec 2004 61
48 Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy Andrea Pinos, Vytautas Liuolia, S. Marcinkevičius et al. · Journal of Applied Physics Jun 2011 58
49 Internal quantum efficiency in AlGaN with strong carrier localization Juras Mickevicius, Gintautas Tamulaitis, Michael S. Shur et al. · Applied Physics Letters 19 Nov 2012 58
50 Generation-recombination noise in GaN/AlGaN heterostructure field effect transistors Sergey Rumyantsev, Nezih Pala, Michael S. Shur et al. · IEEE Transactions on Electron Devices Mar 2001 55

Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.