Institution · STMicroelectronics (India)
Most cited papers from STMicroelectronics (India)
What are the most cited papers from STMicroelectronics (India)?
The most cited paper from STMicroelectronics (India) is "Roadmap on silicon photonics" (David J. Thomson, Aaron J. Zilkie, John Edward Bowers et al., 2016), with 1,357 citations. Next come "Widely linear estimation with complex data" (731) and "Recent developments in biosensors for healthcare and biomedical applications: A review" (269).
Showing 50 of 61 papers. Every paper with more than 37 citations is listed.
| # | Paper | ||
|---|---|---|---|
| 1 | Roadmap on silicon photonics David J. Thomson, Aaron J. Zilkie, John Edward Bowers et al. · Journal of Optics | 24 Jun 2016 | 1,357 |
| 2 | Widely linear estimation with complex data B. Picinbono, Pascal Chevalier · IEEE Transactions on Signal Processing | 1995 | 731 |
| 3 | Recent developments in biosensors for healthcare and biomedical applications: A review Poornachandran Mohankumar, J. Ajayan, Thangamuthu Mohanraj et al. · Measurement | 31 Jul 2020 | 269 |
| 4 | Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia T. Skotnicki, Claire Fenouillet-Beranger, Claire Gallon et al. · IEEE Transactions on Electron Devices | 2008 | 216 |
| 5 | 14.1 A 2.9TOPS/W deep convolutional neural network SoC in FD-SOI 28nm for intelligent embedded systems Giuseppe Desoli, Nitin Chawla, Thomas Boesch et al. | Feb 2017 | 171 |
| 6 | High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding O. Weber, Olivier Faynot, F. Andrieu et al. | Dec 2008 | 165 |
| 7 | 22.5 A 1.62GS/s time-interleaved SAR ADC with digital background mismatch calibration achieving interleaving spurs below 70dBFS Nicolas Le Dortz, Jean-Pierre Blanc, Thierry Simon et al. | Feb 2014 | 154 |
| 8 | NBTI degradation: From transistor to SRAM arrays V. Huard, C. Parthasarathy, Chloe Guerin et al. | Apr 2008 | 149 |
| 9 | 3DVLSI with CoolCube process: An alternative path to scaling P. Batude et al. | Jun 2015 | 143 |
| 10 | RFID- Radiofrequency Identification Anthony Ghiotto, D. Bechevet, Tan‐Phu Vuong et al. · HAL (Le Centre pour la Communication Scientifique Directe) | Nov 2006 | 137 |
| 11 | Multiple Cell Upsets as the Key Contribution to the Total SER of 65 nm CMOS SRAMs and Its Dependence on Well Engineering Gilles Gasiot, Damien Giot, Pierre-Hugues Roche · IEEE Transactions on Nuclear Science | Dec 2007 | 136 |
| 12 | A 3 GHz Dual Core Processor ARM Cortex TM -A9 in 28 nm UTBB FD-SOI CMOS With Ultra-Wide Voltage Range and Energy Efficiency Optimization D. Jacquet et al. · IEEE Journal of Solid-State Circuits | 31 Jan 2014 | 136 |
| 13 | Roadmap to neuromorphic computing with emerging technologies Adnan Mehonić et al. · APL Materials | Oct 2024 | 131 |
| 14 | Interface Trap Generation and Hole Trapping Under NBTI and PBTI in Advanced CMOS Technology With a 2-nm Gate Oxide M. Denais, V. Huard, C. Parthasarathy et al. · IEEE Transactions on Device and Materials Reliability | Dec 2004 | 125 |
| 15 | Technology downscaling worsening radiation effects in bulk: SOI to the rescue Philippe Roché, Jean‐Luc Autran, Gilles Gasiot et al. | Dec 2013 | 116 |
| 16 | 15nm-diameter 3D stacked nanowires with independent gates operation: ΦFET C. Dupré et al. | Dec 2008 | 111 |
| 17 | Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond F. Andrieu et al. | Jun 2010 | 104 |
| 18 | A Single-Chip WCDMA Envelope Reconstruction LDMOS PA with 130MHz Switched-Mode Power Supply Vincent Pinon, Frederic Hasbani, Alexandre Giry et al. | Feb 2008 | 100 |
| 19 | New characterization and modeling approach for NBTI degradation from transistor to product level V. Huard, C. Parthasarathy, N. Rallet et al. | 2007 | 99 |
| 20 | Silicon–germanium receivers for short‐wave‐infrared optoelectronics and communications Daniel Benedikovič, Léopold Virot, Guy Aubin et al. · Nanophotonics | 8 Dec 2020 | 95 |
| 21 | Quantitative Evaluation of Statistical Variability Sources in a 45-nm Technological Node LP N-MOSFET Augustin Cathignol, B. Cheng, Daniel Chanemougame et al. · IEEE Electron Device Letters | 20 May 2008 | 90 |
| 22 | Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas N. Possémé, T. Chevolleau, T. David et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena | Nov 2007 | 78 |
| 23 | Ultra-wide body-bias range LDPC decoder in 28nm UTBB FDSOI technology Philippe Flatresse, Bastien Giraud, Jean-Philippe Noël et al. | Feb 2013 | 76 |
| 24 | 25 Gbps low-voltage hetero-structured silicon-germanium waveguide pin photodetectors for monolithic on-chip nanophotonic architectures Daniel Benedikovič, Léopold Virot, Guy Aubin et al. · Photonics Research | 15 Mar 2019 | 70 |
| 25 | An Efficient Architecture for 3-D Discrete Wavelet Transform Abhijit Das, Aritra Hazra, Swapna Banerjee · IEEE Transactions on Circuits and Systems for Video Technology | 9 Sep 2009 | 70 |
| 26 | New Y-function-based methodology for accurate extraction of electrical parameters on nano-scaled MOSFETs Dominique Fleury, Antoine Cros, H. Brut et al. | Mar 2008 | 69 |
| 27 | A Review on Power Supply Induced Jitter Jai Narayan Tripathi, Vijender Kumar Sharma, Hitesh Shrimali · IEEE Transactions on Components Packaging and Manufacturing Technology | Oct 2018 | 67 |
| 28 | Active Interposer Technology for Chiplet-Based Advanced 3D System Architectures P. Coudrain et al. | May 2019 | 66 |
| 29 | Chemical phase segregation during the crystallization of Ge-rich GeSbTe alloys Marta Agati, Maxime Vallet, S. Joulié et al. · Journal of Materials Chemistry C | 2019 | 66 |
| 30 | Alpha-Induced Multiple Cell Upsets in Standard and Radiation Hardened SRAMs Manufactured in a 65 nm CMOS Technology Gilles Gasiot, Damien Giot, Pierre-Hugues Roche · IEEE Transactions on Nuclear Science | Dec 2006 | 64 |
| 31 | LusSy: A Toolbox for the Analysis of Systems-on-a-Chip at the Transactional Level Matthieu Moy, Florence Maraninchi, Laurent Maillet-Contoz | 11 Oct 2006 | 62 |
| 32 | 22.3 A 20GHz-BW 6b 10GS/s 32mW time-interleaved SAR ADC with Master T&H in 28nm UTBB FDSOI technology Stéphane Le Tual, Pratap Narayan Singh, Christophe Curis et al. | Feb 2014 | 61 |
| 33 | Laser Fault Injection at the CMOS 28 nm Technology Node: an Analysis of the Fault Model Jean-Max Dutertre, Vincent Beroulle, Philippe Candelier et al. | Sep 2018 | 60 |
| 34 | QCA based multiplexing of 16 arithmetic & logical subsystems-A paradigm for nano computing Vishnu C. Teja, Satish Polisetti, Santhosh Kasavajjala | 2008 | 58 |
| 35 | A fast, flexible, positive and negative adaptive body-bias generator in 28nm FDSOI Milovan Blagojević, Martin Cochet, Ben Keller et al. | Jun 2016 | 56 |
| 36 | Simulation Study of Dominant Statistical Variability Sources in 32-nm High- $\kappa$/Metal Gate CMOS Xingsheng Wang, Gareth Douglas Roy, O. Saxod et al. · IEEE Electron Device Letters | 13 Mar 2012 | 56 |
| 37 | 16.7 A 40-310TOPS/W SRAM-Based All-Digital Up to 4b In-Memory Computing Multi-Tiled NN Accelerator in FD-SOI 18nm for Deep-Learning Edge Applications Giuseppe Desoli, Nitin Chawla, Thomas Boesch et al. | 19 Feb 2023 | 55 |
| 38 | Breakthroughs in 3D Sequential technology Laurent Brunet et al. | Dec 2018 | 54 |
| 39 | $1.62\mu \mathrm{m}$ Global Shutter Quantum Dot Image Sensor Optimized for Near and Shortwave Infrared Jonathan S. Steckel et al. | 11 Dec 2021 | 53 |
| 40 | 0.13μm SiGe BiCMOS technology for mm-wave applications G. Avenier, Pascal Chevalier, G. Troillard et al. | Oct 2008 | 53 |
| 41 | A 1.2V 4.5mW 10b 100MS/s Pipeline ADC in a 65nm CMOS Mounir Boulemnakher, Eric André, Jocelyn Roux et al. | Feb 2008 | 47 |
| 42 | 60 GHz antennas in HTCC and glass technology Jérôme Lanteri, Laurent Dussopt, Romain Pilard et al. · HAL (Le Centre pour la Communication Scientifique Directe) | 12 Apr 2010 | 45 |
| 43 | SymBIST: Symmetry-Based Analog and Mixed-Signal Built-In Self-Test for Functional Safety Antonios Pavlidis, Marie‐Minerve Louërat, Eric Faehn et al. · IEEE Transactions on Circuits and Systems I Regular Papers | 30 Mar 2021 | 44 |
| 44 | Efficient Modeling of Power Supply Induced Jitter in Voltage-Mode Drivers (EMPSIJ) Jai Narayan Tripathi, Ramachandra Achar, Rakesh Malik · IEEE Transactions on Components Packaging and Manufacturing Technology | 3 Jul 2017 | 42 |
| 45 | New Y -function based MOSFET parameter extraction method from weak to strong inversion range Jean-Baptiste Henry, Quentin Rafhay, A. Cros et al. · Solid-State Electronics | 18 Jun 2016 | 41 |
| 46 | ACI (automated Continuous Integration) using Jenkins: Key for successful embedded Software development Nikita Hitesh Seth, Rishi Khare | Dec 2015 | 41 |
| 47 | Prediction of Multiple Cell Upset Induced by Heavy Ions in a 90 nm Bulk SRAM Vincent Correas, F. Saigne, B. Sagnes et al. · IEEE Transactions on Nuclear Science | Aug 2009 | 41 |
| 48 | The Experimental Demonstration of a SASP-Based Full Software Radio Receiver François Rivet, Yann Deval, Jean-Baptiste Bégueret et al. · IEEE Journal of Solid-State Circuits | 27 Apr 2010 | 41 |
| 49 | A 65nm CMOS fully integrated transceiver module for 60GHz wireless HD applications Alexandre Siligaris, Olivier Richard, Baudouin Martineau et al. | Feb 2011 | 40 |
| 50 | Evaluation of Hybrid Bonding Interface Quality by Contact Resistivity Measurement J. Jourdon, S. Lhostis, Stephane Moreau et al. · IEEE Transactions on Electron Devices | 24 Apr 2019 | 40 |
Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.