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Institution · SVT Associates (United States)

Most cited papers from SVT Associates (United States)

SVT Associates (United States)

What are the most cited papers from SVT Associates (United States)?

The most cited paper from SVT Associates (United States) is "Arthroscopic Management of Femoroacetabular Impingement: Early Outcomes Measures" (Christopher Michael Larson, M. Russell Giveans, 2008), with 352 citations. Next come "Determination of Crude Protein in Animal Feed, Forage, Grain, and Oilseeds by Using Block Digestion with a Copper Catalyst and Steam Distillation into Boric Acid: Collaborative Study" (309) and "Crude Fat, Diethyl Ether Extraction, in Feed, Cereal Grain, and Forage (Randall/Soxtec/Submersion Method): Collaborative Study" (309).

Showing 50 of 61 papers. Every paper with more than 40 citations is listed.

Most cited papers, sortable by citations and release date
#Paper
1 Arthroscopic Management of Femoroacetabular Impingement: Early Outcomes Measures Christopher Michael Larson, M. Russell Giveans · Arthroscopy The Journal of Arthroscopic and Related Surgery 8 Jan 2008 352
2 Determination of Crude Protein in Animal Feed, Forage, Grain, and Oilseeds by Using Block Digestion with a Copper Catalyst and Steam Distillation into Boric Acid: Collaborative Study Nancy J. Thiex et al. · Journal of AOAC International Mar 2002 309
3 Crude Fat, Diethyl Ether Extraction, in Feed, Cereal Grain, and Forage (Randall/Soxtec/Submersion Method): Collaborative Study Nancy J. Thiex et al. · Journal of AOAC International Sep 2003 309
4 Piezoelectric charge densities in AlGaN/GaN HFETs Peter M. Asbeck, Edward T. Yu, S. S. Lau et al. · Electronics Letters 3 Jul 1997 279
5 Determination of Fat,Moisture, and Protein in Meat and Meat Products by Using the FOSS FoodScan Near-Infrared Spectrophotometer with FOSS Artificial Neural Network Calibration Model and Associated Database: Collaborative Study Shirley Anderson et al. · Journal of AOAC International Jul 2007 250
6 Specificity and Sensitivity of Claims‐Based Algorithms for Identifying Members of Medicare+Choice Health Plans That Have Chronic Medical Conditions Thomas S. Rector, Steven L. Wickstrom, Mona Shah et al. · Health Services Research Open access 8 Nov 2004 192
7 Luminescence properties of defects in ZnO Michael Alexander Reshchikov, Hadis Morkoç, Bill Nemeth et al. · Physica B Condensed Matter 6 Sep 2007 186
8 Annealing of Al 2 O 3 thin films prepared by atomic layer deposition Lei Zhang, Hai Chang Jiang, Chuhao Liu et al. · Journal of Physics D Applied Physics 4 Jun 2007 176
9 Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy James M. Van Hove, Robert Hickman, Jody J. Klaassen et al. · Applied Physics Letters 28 Apr 1997 175
10 Mg Zn O ∕ Al Ga N heterostructure light-emitting diodes Andrei V. Osinsky, J. W. Dong, M. Z. Kauser et al. · Applied Physics Letters Open access 8 Nov 2004 164
11 Depth and thermal stability of dry etch damage in GaN Schottky diodes X. A. Cao, H. Cho, S. J. Pearton et al. · Applied Physics Letters 12 Jul 1999 148
12 Electrical detection of immobilized proteins with ungated AlGaN∕GaN high-electron-mobility Transistors B. S. Kang, Fan Ren, Lin Wang et al. · Applied Physics Letters 8 Jul 2005 129
13 Crude Fat, Hexanes Extraction, in Feed, Cereal Grain, and Forage (Randall/Soxtec/Submersion Method): Collaborative Study Nancy J. Thiex et al. · Journal of AOAC International Sep 2003 119
14 dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors B. Luo, J. W. Johnson, Fan Ren et al. · Applied Physics Letters Oct 2001 118
15 Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy L. K. Li, Michael J. Jurkovic, W. I. Wang et al. · Applied Physics Letters 27 Mar 2000 100
16 Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures A. M. Dabiran, Andrew M. Wowchak, Andrei V. Osinsky et al. · Applied Physics Letters 25 Aug 2008 98
17 Nanofabrication of thin chromium film deposited on Si(100) surfaces by tip induced anodization in atomic force microscopy Dawen Wang, Liming Tsau, K. L. Wang et al. · Applied Physics Letters 28 Aug 1995 88
18 Effects of interfacial oxides on Schottky barrier contacts to n- and p-type GaN X. A. Cao, S. J. Pearton, Gerard T. Dang et al. · Applied Physics Letters 27 Dec 1999 88
19 Influence of Co60 γ-rays on dc performance of AlGaN/GaN high electron mobility transistors B. Luo, J. W. Johnson, Fan Ren et al. · Applied Physics Letters 28 Jan 2002 87
20 Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes Jingbi You, X. W. Zhang, S. G. Zhang et al. · Applied Physics Letters 17 May 2010 82
21 Systematic study of polarized electron emission from strained GaAs∕GaAsP superlattice photocathodes Takashi Maruyama, Dah-An Luh, A. Brachmann et al. · Applied Physics Letters Open access 27 Sep 2004 77
22 Generation of non-Rayleigh speckle distributions using marked regularity models Robert M. Cramblitt, Kevin J. Parker · IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control Jul 1999 75
23 Electroluminescent properties of erbium-doped III–N light-emitting diodes John M. Zavada, S. X. Jin, Neeraj Nepal et al. · Applied Physics Letters 5 Feb 2004 74
24 Band gap properties of Zn1−xCdxO alloys grown by molecular-beam epitaxy Xingjun Wang, I. A. Buyanova, Weimin Chen et al. · Applied Physics Letters 9 Oct 2006 74
25 300°C GaN/AlGaN Heterojunction Bipolar Transistor Fan Ren, C. R. Abernathy, James M. Van Hove et al. · MRS Internet Journal of Nitride Semiconductor Research Open access 1998 73
26 Record-level quantum efficiency from a high polarization strained GaAs/GaAsP superlattice photocathode with distributed Bragg reflector Wei Liu, Yiqiao Chen, Wentao Lu et al. · Applied Physics Letters 19 Dec 2016 73
27 GaN n- and p-type Schottky diodes: Effect of dry etch damage X. A. Cao, S. J. Pearton, Gerard T. Dang et al. · IEEE Transactions on Electron Devices Jul 2000 70
28 Yellow luminescence in ZnO layers grown on sapphire Michael Alexander Reshchikov, Jun Xie, Brian Hertog et al. · Journal of Applied Physics 15 May 2008 68
29 Development of MgZnO-ZnO-AlGaN heterostructures for ultraviolet light emitting applications J. W. Dong, Andrei V. Osinsky, Brian Hertog et al. · Journal of Electronic Materials Apr 2005 67
30 Low Hg(II) ion concentration electrical detection with AlGaN/GaN high electron mobility transistors K.H. Chen, H.W. Wang, B. S. Kang et al. · Sensors and Actuators B Chemical 22 May 2008 63
31 SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications Shao-Tsu Hung, Chi‐Jung Chang, Chien-Hsing Hsu et al. · International Journal of Hydrogen Energy May 2012 61
32 Lithium-related states as deep electron traps in ZnO O. Lopatiuk, Leonid Chernyak, Andrei V. Osinsky et al. · Applied Physics Letters Open access 17 Nov 2005 61
33 Development of enhancement mode AlN/GaN high electron mobility transistors Chin‐Wei Chang, S. J. Pearton, C. F. Lo et al. · Applied Physics Letters 29 Jun 2009 58
34 Creation of high resistivity GaN by implantation of Ti, O, Fe, or Cr X. A. Cao, S. J. Pearton, Gerard T. Dang et al. · Journal of Applied Physics Feb 2000 57
35 Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN∕GaN heterostructure transistors Alexander Y. Polyakov, N. B. Smirnov, A. V. Govorkov et al. · Applied Physics Letters 3 Dec 2007 57
36 ZnO and Related Materials for Sensors and Light-Emitting Diodes S. J. Pearton, Wootaek Lım, J.S. Wright et al. · Journal of Electronic Materials 17 Mar 2008 56
37 Studies of minority carrier diffusion length increase in p-type ZnO:Sb Olena Lopatiuk‐Tirpak, Leonid Chernyak, Faxian Xiu et al. · Journal of Applied Physics Open access 15 Oct 2006 55
38 Carrier concentration dependence of acceptor activation energy in p-type ZnO Olena Lopatiuk‐Tirpak, Winston Vaughan Schoenfeld, Leonid Chernyak et al. · Applied Physics Letters Open access 15 May 2006 54
39 Wireless hydrogen sensor network using AlGaN/GaN high electron mobility transistor differential diode sensors Xi Yu, Changzhi Li, Z.N. Low et al. · Sensors and Actuators B Chemical 16 Aug 2008 54
40 Site-selective spectroscopy of Er in GaN Volkmar Dierolf, Chr. Sandmann, John M. Zavada et al. · Journal of Applied Physics 29 Apr 2004 53
41 Measurement of Zn0.95Cd0.05O∕ZnO (0001) heterojunction band offsets by x-ray photoelectron spectroscopy Jau-Jiun Chen, Fan Ren, Yuanjie Li et al. · Applied Physics Letters 2 Nov 2005 52
42 Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detection Resham Thapa, Siddharth Alur, Kyusang Kim et al. · Applied Physics Letters 4 Jun 2012 50
43 High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors B. Luo, J. W. Johnson, Fan Ren et al. · Journal of Electronic Materials May 2002 49
44 Hybrid CdZnO/GaN quantum-well light emitting diodes Jeremy W. Mares, M. Falanga, Amy V. Thompson et al. · Journal of Applied Physics Open access Nov 2008 47
45 Enhanced vertical transport in p-type AlGaN∕GaN superlattices M. Z. Kauser, Andrei V. Osinsky, A. M. Dabiran et al. · Applied Physics Letters 29 Nov 2004 47
46 Minority carrier transport in p-type Zn0.9Mg0.1O doped with phosphorus O. Lopatiuk, William Burdett, Leonid Chernyak et al. · Applied Physics Letters Open access 23 Dec 2004 47
47 Forced-air warming blowers: An evaluation of filtration adequacy and airborne contamination emissions in the operating room Mark C. Albrecht, Robert L. Gauthier, Kumar G. Belani et al. · American Journal of Infection Control 21 Nov 2010 46
48 Robust detection of hydrogen using differential AlGaN∕GaN high electron mobility transistor sensing diodes Hung-Ta Wang, Travis J. Anderson, Fan Ren et al. · Applied Physics Letters 11 Dec 2006 46
49 GaN growth by a controllable RF-excited nitrogen source James M. Van Hove, G. J. Cosimini, Erik Nelson et al. · Journal of Crystal Growth May 1995 45
50 Thermal emittance and response time measurements of a GaN photocathode Ivan Bazarov, Bruce Dunham, Xianghong Liu et al. · Journal of Applied Physics 15 Apr 2009 45

Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.