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Institution · Transphorm (United States)

Most cited papers from Transphorm (United States)

Transphorm (United States)

What are the most cited papers from Transphorm (United States)?

The most cited paper from Transphorm (United States) is "GaN-on-Si Power Technology: Devices and Applications" (Kevin Jing Chen, Oliver D. Häberlen, Alex Lidow et al., 2017), with 1,708 citations. Next come "A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz" (260) and "Current status and scope of gallium nitride-based vertical transistors for high-power electronics application" (155).

Showing 50 of 74 papers. Every paper is listed.

Most cited papers, sortable by citations and release date
#Paper
1 GaN-on-Si Power Technology: Devices and Applications Kevin Jing Chen, Oliver D. Häberlen, Alex Lidow et al. · IEEE Transactions on Electron Devices 27 Feb 2017 1,708
2 A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz Yifeng Wu, Matt Jacob-Mitos, M. Moore et al. · IEEE Electron Device Letters 29 Jul 2008 260
3 Current status and scope of gallium nitride-based vertical transistors for high-power electronics application Srabanti Chowdhury, Brian L. Swenson, Man Hoi Wong et al. · Semiconductor Science and Technology Open access 21 Jun 2013 155
4 Deadbeat Predictive Power Control of Single-Phase Three-Level Neutral-Point-Clamped Converters Using Space-Vector Modulation for Electric Railway Traction Wensheng Song, Junpeng Ma, Liang Yong Zhou et al. · IEEE Transactions on Power Electronics 6 Feb 2015 155
5 Efficiency Comparison Between Si-IGBT-Based Drive and GaN-Based Drive Kohei Shirabe, Mahesh M. Swamy, Jun-Koo Kang et al. · IEEE Transactions on Industry Applications 19 Nov 2013 117
6 kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz Yifeng Wu, John Gritters, L. Shen et al. · IEEE Transactions on Power Electronics 10 Oct 2013 115
7 N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance Onur S. Koksaldi, J. Robert Haller, Haoran Li et al. · IEEE Electron Device Letters 15 May 2018 105
8 Advantages of high frequency PWM in AC motor drive applications Kohei Shirabe, Mahesh M. Swamy, Jun-Koo Kang et al. Conference paper Sep 2012 103
9 Probabilistic Framework for Liquefaction Potential by Shear Wave Velocity C. Hsein Juang, Caroline J. Chen, Tao Jiang · Journal of Geotechnical and Geoenvironmental Engineering Aug 2001 86
10 Evolution of Sand Microstructure during Shear J. David Frost, Deh-Jeng Jang · Journal of Geotechnical and Geoenvironmental Engineering Feb 2000 54
11 1200V GaN Switches on Sapphire Substrate Geetak Gupta et al. Conference paper 22 May 2022 48
12 600 V JEDEC-qualified highly reliable GaN HEMTs on Si substrates Toshihide Kikkawa et al. Conference paper Dec 2014 47
13 Improved Dynamic R ON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch Dong Ji, Wenwen Li, Anchal Agarwal et al. · IEEE Electron Device Letters 4 Jun 2018 43
14 Investigation and Review of Challenges in a High-Temperature 30-kVA Three-Phase Inverter Using SiC MOSFETs Feng Qi, Miao Wang, Longya Xu · IEEE Transactions on Industry Applications 22 Jan 2018 41
15 Performance and robustness of first generation 600-V GaN-on-Si power transistors Yifeng Wu, John Gritters, L. Shen et al. Conference paper Oct 2013 41
16 Commercialization and reliability of 600 V GaN power switches Toshihide Kikkawa, Tsutomu Hosoda, Ken Shono et al. Conference paper Apr 2015 37
17 Paralleling high-speed GaN power HEMTs for quadrupled power output Yifeng Wu Conference paper Mar 2013 31
18 Applications and characterization of four quadrant GaN switch Utkarsh Raheja, Ghanshyamsinh Gohil, Kijeong Han et al. Conference paper Oct 2017 30
19 Commercialization of high 600V GaN-on-silicon power HEMTs and diodes Primit Parikh, Yifeng Wu, Likun Shen Conference paper Jul 2013 29
20 Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures Davide Bisi, Steven Wienecke, Brian Romanczyk et al. · IEEE Electron Device Letters 22 Jan 2020 27
21 1200V GaN Switches on Sapphire: A low-cost, high-performance platform for EV and industrial applications Geetak Gupta, Masahito Kanamura, Brian L. Swenson et al. · 2022 International Electron Devices Meeting (IEDM) Conference paper 3 Dec 2022 24
22 Short-Circuit Capability Demonstrated for GaN Power Switches Davide Bisi, John Gritters, Tsutomu Hosoda et al. Conference paper 14 Jun 2021 24
23 (Invited)650 Volt GaN Commercialization Reaches Automotive Standards Primit Parikh et al. · ECS Transactions Conference paper 17 Aug 2017 24
24 Total GaN solution to electrical power conversion Yifeng Wu, Robert L. Coffie, Nick Fichtenbaum et al. Conference paper Jun 2011 21
25 Innovations in GaN Four Quadrant Switch technology Geetak Gupta, Carl J. Neufeld, Davide Bisi et al. Conference paper 4 Dec 2023 19
26 Commercially Available N-polar GaN HEMT Epitaxy for RF Applications Davide Bisi, Brian Romanczyk, Xiang Liu et al. Conference paper 7 Nov 2021 19
27 Paralleling GaN HEMTs for diode-free bridge power converters Zhan Wang, Yifeng Wu, Jim Honea et al. Conference paper Mar 2015 18
28 Lifetime tests of 600-V GaN-on-Si power switches and HEMTs Kurt V. Smith, J. Robert Haller, Josep Maria Guerrero et al. · Microelectronics Reliability 22 Dec 2015 17
29 (Ultra)wide-bandgap semiconductors for electric vehicles Geetak Gupta, Elaheh Ahmadi · MRS Bulletin Open access Jul 2024 16
30 Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels Haoran Li, Steven Wienecke, Brian Romanczyk et al. · Applied Physics Letters 12 Feb 2018 15
31 Decision Tool for Microtunneling Method Selection M. Ueki, Carl Thomas Haas, Jongwon Seo · Journal of Construction Engineering and Management Mar 1999 13
32 Short-Circuit Protection for GaN Power Devices with Integrated Current Limiter and Commercial Gate Driver Davide Bisi, Long H. Nguyen, Philip Zuk et al. · 2022 IEEE Applied Power Electronics Conference and Exposition (APEC) Conference paper 20 Mar 2022 12
33 650V GaN Based 3.3kW Bi-Directional DC-DC Converter for High Efficiency Battery Charger with Wide Battery Voltage Range Feng Qi, Zhan Wang, Yifeng Wu Conference paper Mar 2019 12
34 650 V Highly Reliable GaN HEMTs on Si Substrates over Multiple Generations: Matching Silicon CMOS Manufacturing Metrics and Process Control S. Chowdhury, Yifeng Wu, Likun Shen et al. Conference paper Oct 2016 12
35 Commercialization of High 600V GaN-on-Silicon Power Devices Primit Parikh, Yi Feng Wu, L. Shen · Materials science forum Open access 26 Feb 2014 12
36 Investigation of driver circuits for GaN HEMTs in leaded packages Zhan Wang, Jim Honea, Yuxiang Shi et al. Conference paper Oct 2014 11
37 An Accurate Compact Model for GaN Power Switches with the Physics-based ASM-HEMT Model Sourabh Khandelwal, Michelle Labrecque, Yulu Huang et al. Conference paper 14 Jun 2021 9
38 Short-Circuit Capability with GaN HEMTs : Invited Davide Bisi, Bill Cruse, Philip Zuk et al. · 2022 IEEE International Reliability Physics Symposium (IRPS) Conference paper Mar 2022 8
39 Advantage of GaN in Phase Shift Full Bridges Feng Qi, Zhan Wang, Yifeng Wu et al. Conference paper Oct 2019 8
40 GaN Power Commercialization with Highest Quality-Highest Reliability 650V HEMTs-Requirements, Successes and Challenges Primit Parikh, Yifeng Wu, Li Shen et al. Conference paper Dec 2018 8
41 Advances in reliability and operation space of high-voltage GaN power devices on Si substrates Yanlin Wu, Josep Maria Guerrero, J. McKay et al. Conference paper Oct 2014 8
42 A Hybrid Binary Multilevel Cascaded Inverter for Medium-Voltage Applications Jih‐Sheng Lai, Bryan Gutierrez, Moonhyun Lee et al. Conference paper 10 Oct 2021 7
43 Planning and Design of Passing Lanes Using Simulation Model John F. Morrall III, Edward I. Miller, Gerald A. Smith et al. · Journal of Transportation Engineering 1995 7
44 High-electron-mobility transistors with metal-organic chemical vapor deposition-regrown contacts for high voltage applications Onur S. Koksaldi, Brian Romanczyk, J. Robert Haller et al. · Semiconductor Science and Technology Open access 9 Oct 2020 6
45 Reliability & Performance Related to Internal Avalanche of GaN Cascode Devices Yifeng Wu, Yan Lai Conference paper Oct 2018 6
46 The Future of GaN is Also High Voltage, High Current, and Bidirectional: (Invited) U. K. Mishra, Davide Bisi, Geetak Gupta et al. Conference paper 7 Dec 2024 5
47 High Efficient Single-phase Transformerless PV Inverter using GaN HEMTs and Si MOSFETs Zhan Wang, Feng Qi, Yifeng Wu Conference paper Mar 2019 5
48 Using gallium‐nitride cascode switching devices for common mode electromagnetic interference reduction in power converters/inverters J. -Y. Lin, Dan Chen, Chung‐Wen Hung et al. · IET Power Electronics 17 Mar 2016 5
49 GaN FETs Enable High Frequency Dual Active Bridge Converters for Bi-directional Battery Chargers Feng Qi, Zhan Wang, Yifeng Wu et al. Conference paper Mar 2020 4
50 Characterization of Electroless Nickel Plated Materials During High Temperature Solder Processing David M. Rhodes, S. Chowdhury, Sung Yea et al. · IEEE Transactions on Semiconductor Manufacturing 3 Oct 2019 4

Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.