Most cited papers in Advanced Semiconductor Detectors and Materials
What are the most cited papers in Advanced Semiconductor Detectors and Materials?
The most cited paper in Advanced Semiconductor Detectors and Materials is "The Long-Wavelength Edge of Photographic Sensitivity and of the Electronic Absorption of Solids" (Franz Urbach, 1953), with 6,047 citations. Next come "Anomalous Optical Absorption Limit in InSb" (3,970) and "Defects in epitaxial multilayers I. Misfit dislocations" (3,096).
Showing 50 of 99 papers. Every paper with more than 438 citations is listed.
| # | Paper | ||
|---|---|---|---|
| 1 | The Long-Wavelength Edge of Photographic Sensitivity and of the Electronic Absorption of Solids Franz Urbach · Physical Review | Dec 1953 | 6,047 |
| 2 | Anomalous Optical Absorption Limit in InSb Elias Burstein · Physical Review | Feb 1954 | 3,970 |
| 3 | Defects in epitaxial multilayers I. Misfit dislocations Jacqueline M. Matthews · Journal of Crystal Growth | Dec 1974 | 3,096 |
| 4 | Band lineups and deformation potentials in the model-solid theory Chris G. Van de Walle · Physical review. B, Condensed matter | 15 Jan 1989 | 2,230 |
| 5 | The Interpretation of the Properties of Indium Antimonide T. S. Moss · Proceedings of the Physical Society Section B | Oct 1954 | 1,915 |
| 6 | Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces Devin Leonard, Mohan Krishnamurthy, Casper M. Reaves et al. · Applied Physics Letters | 6 Dec 1993 | 1,741 |
| 7 | Single-photon detectors for optical quantum information applications Robert H. Hadfield · Nature Photonics | 30 Nov 2009 | 1,733 |
| 8 | Quantum-well infrared photodetectors B. F. Levine · Journal of Applied Physics | 15 Oct 1993 | 1,664 |
| 9 | Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende Structures Marvin L. Cohen, T. K. Bergstresser · Physical Review | 14 Jan 1966 | 1,638 |
| 10 | Defects in epitaxial multilayers Janet W. Matthews, A. E. Blakeslee · Journal of Crystal Growth | Dec 1974 | 1,504 |
| 11 | Superlattice band structure in the envelope-function approximation G. Bastard · Physical review. B, Condensed matter | 15 Nov 1981 | 1,326 |
| 12 | Infrared detectors: status and trends Antoni Rogalski · Progress in Quantum Electronics | 2003 | 1,281 |
| 13 | Temperature dependence of semiconductor band gaps Kevin P. O’Donnell, X. Chen · Applied Physics Letters | 24 Jun 1991 | 1,210 |
| 14 | Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs J. Y. Marzin, Jean‐Michel Gérard, A. Izraël et al. · Physical Review Letters | Aug 1994 | 1,146 |
| 15 | Linewidth dependence of radiative exciton lifetimes in quantum wells Jochen Feldmann, G. Peter, Ernst Otto Göbel et al. · Physical Review Letters | 16 Nov 1987 | 1,097 |
| 16 | Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV Michael D. Sturge · Physical Review | Aug 1962 | 1,083 |
| 17 | Thin-film Sb2Se3 photovoltaics with oriented one-dimensional ribbons and benign grain boundaries Ying Zhou, Liang Wang, Shiyou Chen et al. · Nature Photonics | 18 May 2015 | 1,042 |
| 18 | HgCdTe infrared detector material: history, status and outlook Antoni Rogalski · Reports on Progress in Physics | 23 Aug 2005 | 1,040 |
| 19 | Dense Nested Attention Network for Infrared Small Target Detection Boyang Li, Chao Xiao, Longguang Wang et al. · IEEE Transactions on Image Processing | 22 Aug 2022 | 1,032 |
| 20 | Hydrogenic impurity states in a quantum well: A simple model G. Bastard · Physical review. B, Condensed matter | 15 Oct 1981 | 1,012 |
| 21 | Depletion-Layer Photoeffects in Semiconductors Wolfgang W. Gärtner · Physical Review | Oct 1959 | 1,010 |
| 22 | Coherent Light Emission From GaAs Junctions R. N. Hall, G. E. Fenner, J. D. Kingsley et al. · Physical Review Letters | Nov 1962 | 1,002 |
| 23 | Evidence for Helical Edge Modes in Inverted InAs / GaSb Quantum Wells Ivan Knez, Rui-Rui Du, Gerard Sullivan · Physical Review Letters | 19 Sep 2011 | 983 |
| 24 | Critical layer thickness for self-assembled InAs islands on GaAs Devin Leonard, K. Pond, P. M. Petroff · Physical review. B, Condensed matter | 15 Oct 1994 | 962 |
| 25 | Self-organized growth of regular nanometer-scale InAs dots on GaAs J. M. Moison, F. Houzay, F. Barthe et al. · Applied Physics Letters | 10 Jan 1994 | 931 |
| 26 | Cadmium zinc telluride and its use as a nuclear radiation detector material Tuviah E. Schlesinger, James E. Toney, Hyoseok Yoon et al. · Materials Science and Engineering R Reports | Apr 2001 | 904 |
| 27 | Infrared detectors: an overview Antoni Rogalski · Infrared Physics & Technology | Jun 2002 | 867 |
| 28 | Scientific Charge-Coupled Devices James R. Janesick, Tom S. Elliott, Stewart A. Collins et al. · Optical Engineering | Aug 1987 | 866 |
| 29 | Exciton binding energy in quantum wells G. Bastard, Emilio E. Mendez, L. L. Chang et al. · Physical review. B, Condensed matter | 15 Aug 1982 | 833 |
| 30 | Third-generation infrared photodetector arrays Antoni Rogalski, Jarek Antoszewski, L. Faraone · Journal of Applied Physics | May 2009 | 830 |
| 31 | Estimation of the thermal band gap of a semiconductor from seebeck measurements H J Goldsmid, Jeff W. Sharp · Journal of Electronic Materials | Jul 1999 | 830 |
| 32 | ISGRI: The INTEGRAL Soft Gamma-Ray Imager F. Lebrun et al. · Astronomy and Astrophysics | 28 Oct 2003 | 825 |
| 33 | Random Telegraph Signal in the Photoluminescence Intensity of a Single Quantum Dot Al. L. Éfros, Matthew Scott Rosen · Physical Review Letters | 10 Feb 1997 | 820 |
| 34 | Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications S. Del Sordo, L. Abbene, E. Caroli et al. · Sensors | 12 May 2009 | 812 |
| 35 | Low threshold, large T o injectionlaser emissionfrom (InGa)As quantum dots N. Kirstaedter, Nikolay N. Ledentsov, Marius Grundmann et al. · Electronics Letters | 18 Aug 1994 | 811 |
| 36 | COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1− x P x ) JUNCTIONS N. Holonyak, S. F. Bevacqua · Applied Physics Letters | Dec 1962 | 809 |
| 37 | Auger coefficients for highly doped and highly excited silicon J. Dziewior, Wolfgang Schmid · Applied Physics Letters | Sep 1977 | 802 |
| 38 | Kinetics of Radiative Recombination at Randomly Distributed Donors and Acceptors D. G. Thomas, J. J. Hopfield, W. M. Augustyniak · Physical Review | 4 Oct 1965 | 797 |
| 39 | Bandgap Dependence and Related Features of Radiation Ionization Energies in Semiconductors Claude A. Klein · Journal of Applied Physics | Mar 1968 | 784 |
| 40 | Convergence of multi-valley bands as the electronic origin of high thermoelectric performance in CoSb3 skutterudites Yinglu Tang, Zachary M. Gibbs, Luis A. Agapito et al. · Nature Materials | 5 Oct 2015 | 778 |
| 41 | Material parameters of In1− x Ga x As y P1− y and related binaries Sadao Adachi · Journal of Applied Physics | Dec 1982 | 774 |
| 42 | Remote thermometry with thermographic phosphors: Instrumentation and applications Stephen W. Allison, G. T. Gillies · Review of Scientific Instruments | Jul 1997 | 751 |
| 43 | Ultranarrow Luminescence Lines from Single Quantum Dots Marius Grundmann, Jürgen H. Christen, N. N. Ledentsov et al. · Physical Review Letters | 15 May 1995 | 741 |
| 44 | Proposal for strained type II superlattice infrared detectors D. L. Smith, C. Mailhiot · Journal of Applied Physics | 15 Sep 1987 | 724 |
| 45 | n B n detector, an infrared detector with reduced dark current and higher operating temperature Shimon Maimon, Gary W. Wicks · Applied Physics Letters | 9 Oct 2006 | 710 |
| 46 | Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAs Glenn S. Solomon, John Alfred Trezza, A. F. Marshall et al. · Physical Review Letters | 5 Feb 1996 | 705 |
| 47 | X-ray detectors for digital radiography Martin J. Yaffe, J. A. Rowlands · Physics in Medicine and Biology | 1997 | 697 |
| 48 | Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100) Supratik Guha, Anupam Madhukar, K. C. Rajkumar · Applied Physics Letters | 12 Nov 1990 | 663 |
| 49 | Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe Su‐Huai Wei, Shengbai Zhang · Physical review. B, Condensed matter | 31 Oct 2002 | 659 |
| 50 | Energy gap versus alloy composition and temperature in Hg1−xCdxTe Gary Lee Hansen, Joseph L. Schmit, Thomas N. Casselman · Journal of Applied Physics | Oct 1982 | 651 |
Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for a field when OpenAlex files it under one of the field's topics; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.