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Topic · Advancements in Semiconductor Devices and Circuit Design

Most cited papers in Advancements in Semiconductor Devices and Circuit Design

Advancements in Semiconductor Devices and Circuit Design

What are the most cited papers in Advancements in Semiconductor Devices and Circuit Design?

The most cited paper in Advancements in Semiconductor Devices and Circuit Design is "Physics of Semiconductor Devices" (J.R. ABRAHAMS, Geoffrey Pridham, 1966), with 4,585 citations. Next come "Physics of Semiconductor Devices" (4,188) and "Matching properties of MOS transistors" (3,320).

Showing 50 of 100 papers. Every paper with more than 993 citations is listed.

Most cited papers, sortable by citations and release date
#Paper
1 Physics of Semiconductor Devices J.R. ABRAHAMS, Geoffrey Pridham · Elsevier eBooks Book chapter 1966 4,585
2 Physics of Semiconductor Devices Samarth Jain, S. Radhakrishna Conference paper 29 Aug 1987 4,188
3 Matching properties of MOS transistors Marcel J. M. Pelgrom, Aad C.J. Duinmaijer, A.P.G. Welbers · IEEE Journal of Solid-State Circuits Oct 1989 3,320
4 Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks Yi Ping Cui, Charles M. Lieber · Science 2 Feb 2001 3,260
5 Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots J. R. Petta, Alex C. Johnson, Jacob M. Taylor et al. · Science 2 Sep 2005 3,219
6 Landauer formula for the current through an interacting electron region Yigal Meir, Ned S. Wingreen · Physical Review Letters 20 Apr 1992 3,024
7 Four-Terminal Phase-Coherent Conductance Μ. Büttiker · Physical Review Letters 6 Oct 1986 2,981
8 PARP inhibitors: Synthetic lethality in the clinic Christopher J. Lord, Alan Ashworth · Science Open access 16 Mar 2017 2,980
9 Tunnel field-effect transistors as energy-efficient electronic switches Adrian Mihai Ionescu, Heike Riel · Nature Open access Nov 2011 2,957
10 The electrical properties of polycrystalline silicon films John Y. W. Seto · Journal of Applied Physics Dec 1975 2,901
11 Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System S. Hikami, A. I. Larkin, Yasutaka Nagaoka · Progress of Theoretical Physics Open access Feb 1980 2,803
12 The physics of semiconductor devices H. L. Grubin · IEEE Journal of Quantum Electronics Dec 1979 2,762
13 Growth of nanowire superlattice structures for nanoscale photonics and electronics Mark S. Gudiksen, Lincoln J. Lauhon, Jianfang F. Wang et al. · Nature Feb 2002 2,712
14 Observation of the Spin Hall Effect in Semiconductors Yuichiro K. Kato, Roberto C. Myers, Arthur C. Gossard et al. · Science 12 Nov 2004 2,649
15 Quantized Hall conductance, current-carrying edge states, and the existence of extended states in a two-dimensional disordered potential Bertrand I. Halperin · Physical review. B, Condensed matter 15 Feb 1982 2,514
16 Nanowire transistors without junctions Jean-Pierre Colinge, Chi‐Woo Lee, Aryan Afzalian et al. · Nature Nanotechnology 21 Feb 2010 2,390
17 Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits Kaushik Roy, Subhas Chandra Mukhopadhyay, Hamid Mahmoodi · Proceedings of the IEEE Feb 2003 2,369
18 Low-Power CMOS Digital Design Anantha P. Chandrakasan, Samuel Sheng, R.W. Brodersen 17 Jun 2015 2,225
19 Light Trapping in Silicon Nanowire Solar Cells Erik Christian Garnett, Peidong Yang · Nano Letters 28 Jan 2010 2,184
20 Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices Sayeef Salahuddin, Supriyo Datta · Nano Letters 6 Dec 2007 2,176
21 High Performance Silicon Nanowire Field Effect Transistors Yi Ping Cui, Zhaohui Zhong, Deli Wang et al. · Nano Letters 2003 2,166
22 Logic Gates and Computation from Assembled Nanowire Building Blocks Yu Huang, Xiangfeng Duan, Yi Ping Cui et al. · Science 9 Nov 2001 2,127
23 1.1 Computing's energy problem (and what we can do about it) Mark Horowitz Conference paper Feb 2014 2,069
24 One-dimensional transport and the quantisation of the ballistic resistance D. Wharam, TREVOR J. THORNTON, R. Newbury et al. · Journal of Physics C Solid State Physics 20 Mar 1988 2,045
25 Dissipationless Quantum Spin Current at Room Temperature Shuichi Murakami, Naoto Nagaosa, Shoucheng Zhang · Science Open access 11 Aug 2003 1,959
26 Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec Woo Young Choi, Byung‐Gook Park, Jong Duk Lee et al. · IEEE Electron Device Letters Aug 2007 1,939
27 Two-Dimensional Phonon Transport in Supported Graphene Jae Hun Seol, Insun Jo, Arden L. Moore et al. · Science Open access 8 Apr 2010 1,930
28 Metal‐Assisted Chemical Etching of Silicon: A Review Zhipeng Huang, Nadine Geyer, Peter Christian Werner et al. · Advanced Materials 21 Sep 2010 1,910
29 Scaling of entanglement close to a quantum phase transition Andreas Osterloh, Luigi Amico, G. Falci et al. · Nature Open access Apr 2002 1,881
30 Targeting a CAR to the TRAC locus with CRISPR/Cas9 enhances tumour rejection Justin Eyquem, Jorge Mansilla‐Soto, Theodoros Giavridis et al. · Nature Open access 21 Feb 2017 1,879
31 High dielectric constant oxides John D. Robertson · The European Physical Journal Applied Physics Open access Dec 2004 1,813
32 Thermal conductivity of individual silicon nanowires Deyu Li, Yiying Wu, Philip Kim et al. · Applied Physics Letters 3 Oct 2003 1,762
33 Carrier mobilities in silicon empirically related to doping and field D.M. Caughey, Raye E. Thomas · Proceedings of the IEEE 1967 1,733
34 High dielectric constant gate oxides for metal oxide Si transistors John D. Robertson · Reports on Progress in Physics Open access 14 Dec 2005 1,725
35 A Tunable Kondo Effect in Quantum Dots S. M. Cronenwett, Tjerk H. Oosterkamp, Leo P. Kouwenhoven · Science Open access 24 Jul 1998 1,700
36 Single-shot read-out of an individual electron spin in a quantum dot J. M. Elzerman, Ronald K. Hanson, Laurens H. Willems van Beveren et al. · Nature Open access Jul 2004 1,692
37 Nanometre-scale electronics with III–V compound semiconductors Jesús A. del Alamo · Nature Nov 2011 1,682
38 Alpha-power law MOSFET model and its applications to CMOS inverter delay and other formulas Takeaki Sakurai, A. Richard Newton · IEEE Journal of Solid-State Circuits Apr 1990 1,679
39 FinFET-a self-aligned double-gate MOSFET scalable to 20 nm Chenming Hu, Jeffrey Bokor, Tsu‐Jae King et al. · IEEE Transactions on Electron Devices 2000 1,675
40 Double-Gate Tunnel FET With High- Gate Dielectric Kathy Boucart, Adrian Mihai Ionescu · IEEE Transactions on Electron Devices Open access 28 Jun 2007 1,668
41 Low-Voltage Tunnel Transistors for Beyond CMOS Logic Alan Seabaugh, Qin Zhang · Proceedings of the IEEE 5 Nov 2010 1,642
42 Absence of backscattering in the quantum Hall effect in multiprobe conductors Μ. Büttiker · Physical review. B, Condensed matter 15 Nov 1988 1,632
43 Comparison of atomic-level simulation methods for computing thermal conductivity Patrick K. Schelling, Simon R. Phillpot, Pawel Keblinski · Physical review. B, Condensed matter 4 Apr 2002 1,617
44 Device scaling limits of Si MOSFETs and their application dependencies David J. Frank, Robert H. Dennard, Etienne Nowak et al. · Proceedings of the IEEE Mar 2001 1,580
45 Statistics of Quasiparticles and the Hierarchy of Fractional Quantized Hall States B. I. Halperin · Physical Review Letters 30 Apr 1984 1,536
46 A new method for determining the FET small-signal equivalent circuit G. Dambrine, A. Cappy, Frédéric Héliodore et al. · IEEE Transactions on Microwave Theory and Techniques Jul 1988 1,519
47 Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys Massimo V. Fischetti, S.E. Laux · Journal of Applied Physics 15 Aug 1996 1,514
48 Engineering strategies to overcome the current roadblocks in CAR T cell therapy Sarwish Rafiq, Christopher S. Hackett, Renier J. Brentjens · Nature Reviews Clinical Oncology ReviewOpen access 17 Dec 2019 1,513
49 Experimental Observation of the Spin-Hall Effect in a Two-Dimensional Spin-Orbit Coupled Semiconductor System J. Wunderlich, B. Kaestner, Jairo Sinova et al. · Physical Review Letters Open access 4 Feb 2005 1,502
50 On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration Shuji Takagi, Akira Toriumi, Masao Iwase et al. · IEEE Transactions on Electron Devices 1994 1,496

Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for a field when OpenAlex files it under one of the field's topics; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.