Topic · Ga2O3 and related materials
Most cited papers in Ga2O3 and related materials
What are the most cited papers in Ga2O3 and related materials?
The most cited paper in Ga2O3 and related materials is "Electronics and optoelectronics of two-dimensional transition metal dichalcogenides" (Qing Hua Wang, Kourosh Kalantar‐Zadeh, András Kis et al., 2012), with 16,413 citations. Next come "A comprehensive review of ZnO materials and devices" (11,461) and "Improved tangent estimate in the nudged elastic band method for finding minimum energy paths and saddle points" (9,680).
Showing 50 of 100 papers. Every paper with more than 1,059 citations is listed.
| # | Paper | ||
|---|---|---|---|
| 1 | Electronics and optoelectronics of two-dimensional transition metal dichalcogenides Qing Hua Wang, Kourosh Kalantar‐Zadeh, András Kis et al. · Nature Nanotechnology | Nov 2012 | 16,413 |
| 2 | A comprehensive review of ZnO materials and devices Ümit Özgür, Ya. I. Alivov, C. Liu et al. · Journal of Applied Physics | 15 Aug 2005 | 11,461 |
| 3 | Improved tangent estimate in the nudged elastic band method for finding minimum energy paths and saddle points Graeme Henkelman, Hannes Jónsson · The Journal of Chemical Physics | 8 Dec 2000 | 9,680 |
| 4 | Room-Temperature Ultraviolet Nanowire Nanolasers Michael H. Huang, Samuel S. Mao, H. Feick et al. · Science | 8 Jun 2001 | 8,926 |
| 5 | One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications Yan Xia, Pengfei Yang, Yugang Sun et al. · Advanced Materials | 4 Mar 2003 | 8,549 |
| 6 | Nanobelts of Semiconducting Oxides Zhengwei Pan, Zurong R. Dai, Zhong Lin Wang · Science | 9 Mar 2001 | 5,822 |
| 7 | Fundamentals of zinc oxide as a semiconductor Anderson Janotti, Chris G. Van de Walle · Reports on Progress in Physics | 22 Oct 2009 | 3,932 |
| 8 | Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Applied Physics Letters | 28 Mar 1994 | 3,816 |
| 9 | Mechanisms behind green photoluminescence in ZnO phosphor powders K. Vanheusden, William L. Warren, Carl H. Seager et al. · Journal of Applied Physics | 15 May 1996 | 3,691 |
| 10 | Nanoporous BiVO 4 Photoanodes with Dual-Layer Oxygen Evolution Catalysts for Solar Water Splitting Tae Woo Kim, Kyoung-Shin Choi · Science | 13 Feb 2014 | 3,176 |
| 11 | A review of Ga2O3 materials, processing, and devices S. J. Pearton, Jiancheng Yang, Patrick H. Cary et al. · Applied Physics Reviews | 11 Jan 2018 | 3,125 |
| 12 | Spontaneous polarization and piezoelectric constants of III-V nitrides Fabio Bernardini, Vincenzo Fiorentini, David Vanderbilt · Physical review. B, Condensed matter | 15 Oct 1997 | 3,096 |
| 13 | Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal Kenji Watanabe, Takashi Taniguchi, Hisao Kanda · Nature Materials | 23 May 2004 | 3,062 |
| 14 | Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures O. Ambacher, Joseph A. Smart, J. R. Shealy et al. · Journal of Applied Physics | 15 Mar 1999 | 3,004 |
| 15 | Spin and pseudospins in layered transition metal dichalcogenides Xiaodong Xu, Wang Yao, Di Xiao et al. · Nature Physics | 30 Apr 2014 | 2,885 |
| 16 | Recent advances in ZnO materials and devices David C. Look · Materials Science and Engineering B | Mar 2001 | 2,831 |
| 17 | GaN, AlN, and InN: A review S. Strite, Hadis MORKOÇ · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena | Jul 1992 | 2,818 |
| 18 | Photocatalyst releasing hydrogen from water Kazuhiko Maeda, Kentaro Teramura, Daling Lu et al. · Nature | Mar 2006 | 2,816 |
| 19 | Valleytronics in 2D materials John R. Schaibley, Hongyi Yu, Genevieve Clark et al. · Nature Reviews Materials | 23 Aug 2016 | 2,713 |
| 20 | ZnO Nanowire UV Photodetectors with High Internal Gain Cesare Soci, A. Zhang, Bin Xiang et al. · Nano Letters | 15 Mar 2007 | 2,608 |
| 21 | Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films L. Britnell, R. M. Ribeiro, A. Eckmann et al. · Science | 3 May 2013 | 2,599 |
| 22 | Physical properties of ZnO:F obtained from a fresh and aged solution of zinc acetate and zinc acetylacetonate Arturo Maldonado, S. Tirado-Guerra, Miguel Angel Melendez-Lira et al. · Solar Energy Materials and Solar Cells | 22 Sep 2005 | 2,587 |
| 23 | Native point defects in ZnO Anderson Janotti, Chris G. Van de Walle · Physical Review B | 4 Oct 2007 | 2,427 |
| 24 | Evaporated Sn-doped In2O3 films: Basic optical properties and applications to energy-efficient windows Ivar Hamberg, C. G. Granqvist · Journal of Applied Physics | Dec 1986 | 2,347 |
| 25 | Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO Atsushi Tsukazaki, Akira Ohtomo, Takeyoshi Onuma et al. · Nature Materials | 19 Dec 2004 | 2,077 |
| 26 | Green luminescent center in undoped zinc oxide films deposited on silicon substrates Bixia Lin, Zhuxi Fu, Yunbo Jia · Applied Physics Letters | 13 Aug 2001 | 2,036 |
| 27 | Correlation between photoluminescence and oxygen vacancies in ZnO phosphors K. Vanheusden, Carl H. Seager, William L. Warren et al. · Applied Physics Letters | 15 Jan 1996 | 2,011 |
| 28 | P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) Hiroshi Amano, Masahiro Kito, Kazumasa Hiramatsu et al. · Japanese Journal of Applied Physics | Dec 1989 | 1,981 |
| 29 | A review on highly ordered, vertically oriented TiO2 nanotube arrays: Fabrication, material properties, and solar energy applications Gopal K. Mor, Oomman K. Varghese, Maggie Paulose et al. · Solar Energy Materials and Solar Cells | 15 Jun 2006 | 1,957 |
| 30 | Luminescence properties of defects in GaN Michael Alexander Reshchikov, Hadis Morkoç · Journal of Applied Physics | 14 Mar 2005 | 1,955 |
| 31 | Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films Zikang Tang, George K. Wong, Ping Yu et al. · Applied Physics Letters | 22 Jun 1998 | 1,828 |
| 32 | Intrinsic n -type versus p -type doping asymmetry and the defect physics of ZnO Shengbai Zhang, Su‐Huai Wei, Alex Zunger · Physical review. B, Condensed matter | 31 Jan 2001 | 1,820 |
| 33 | GaN: Processing, defects, and devices S. J. Pearton, J.C. Zolper, RANDY J. SHUL et al. · Journal of Applied Physics | Jul 1999 | 1,812 |
| 34 | Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata et al. · Applied Physics Letters | 2 Jan 2012 | 1,812 |
| 35 | An aluminium nitride light-emitting diode with a wavelength of 210 nanometres Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimōto · Nature | May 2006 | 1,758 |
| 36 | Blue Luminescence of ZnO Nanoparticles Based on Non‐Equilibrium Processes: Defect Origins and Emission Controls Haibo Zeng, Guotao Duan, Yue Li et al. · Advanced Functional Materials | 11 Jan 2010 | 1,741 |
| 37 | Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes Patrick Waltereit, O. Brandt, A. Trampert et al. · Nature | Aug 2000 | 1,734 |
| 38 | Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures O. Ambacher, B. E. Foutz, Joseph A. Smart et al. · Journal of Applied Physics | 2000 | 1,729 |
| 39 | First-principles study of native point defects in ZnO Adrian F. Kohan, Gerbrand Ceder, Dane Morgan et al. · Physical review. B, Condensed matter | Jun 2000 | 1,682 |
| 40 | Low‐Temperature Wafer‐Scale Production of ZnO Nanowire Arrays Lori E. Greene, Matt Law, Joshua E. Goldberger et al. · Angewandte Chemie International Edition | 2 Jul 2003 | 1,674 |
| 41 | Estimation of lattice strain in ZnO nanoparticles: X-ray peak profile analysis P. Bindu, Sabu Thomas · Journal of theoretical and applied physics | 29 Jul 2014 | 1,672 |
| 42 | Photodegradation of Rhodamine B and Methyl Orange over Boron-Doped g-C 3 N 4 under Visible Light Irradiation Shicheng Yan, Z. S. Li, Zhi Zou · Langmuir | 23 Feb 2010 | 1,669 |
| 43 | Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors Michele Buscema, Dirk J. Groenendijk, Sofya I. Blanter et al. · Nano Letters | 12 May 2014 | 1,658 |
| 44 | Bound exciton and donor–acceptor pair recombinations in ZnO Bertrand Meyer, Helder R. Alves, D.M. Hofmann et al. · physica status solidi (b) | 23 Jan 2004 | 1,644 |
| 45 | Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges Jeff Y. Tsao et al. · Advanced Electronic Materials | 4 Dec 2017 | 1,588 |
| 46 | Oxygen Vacancy Induced Band-Gap Narrowing and Enhanced Visible Light Photocatalytic Activity of ZnO Junpeng Wang, Zeyan Wang, Baibiao Huang et al. · ACS Applied Materials & Interfaces | 11 Jul 2012 | 1,578 |
| 47 | Solution-processed semiconductors for next-generation photodetectors Francisco Pelayo García de Arquer, Ardalan Armin, Paul Meredith et al. · Nature Reviews Materials | 24 Jan 2017 | 1,538 |
| 48 | Mott Transition in VO 2 Revealed by Infrared Spectroscopy and Nano-Imaging Mumtaz M. Qazilbash, M. Brehm, Byung Gyu Chae et al. · Science | 13 Dec 2007 | 1,521 |
| 49 | Mg x Zn 1−x O as a II–VI widegap semiconductor alloy Akira Ohtomo, M. Kawasaki, Takashi Koida et al. · Applied Physics Letters | 11 May 1998 | 1,509 |
| 50 | On the optical band gap of zinc oxide V. Srikant, David Robinson Clarke · Journal of Applied Physics | 15 May 1998 | 1,503 |
Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for a field when OpenAlex files it under one of the field's topics; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.