Most cited papers in Semiconductor materials and devices
What are the most cited papers in Semiconductor materials and devices?
The most cited paper in Semiconductor materials and devices is "QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials" (Paolo Giannozzi et al., 2009), with 29,445 citations. Next come "Spintronics: A Spin-Based Electronics Vision for the Future" (11,490) and "Spintronics: Fundamentals and applications" (11,330).
Showing 50 of 100 papers. Every paper with more than 1,635 citations is listed.
| # | Paper | ||
|---|---|---|---|
| 1 | QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials Paolo Giannozzi et al. · Journal of Physics Condensed Matter | Sep 2009 | 29,445 |
| 2 | Spintronics: A Spin-Based Electronics Vision for the Future Stefan Wolf, D. D. Awschalom, Robert A. Buhrman et al. · Science | 16 Nov 2001 | 11,490 |
| 3 | Spintronics: Fundamentals and applications Igor Žutić, Jaroslav Fabian, Sankar Das Sarma · Reviews of Modern Physics | 23 Apr 2004 | 11,330 |
| 4 | A roadmap for graphene Kostya S. Novoselov, Vladimir I. Fal’ko, Luigi Colombo et al. · Nature | Oct 2012 | 9,276 |
| 5 | Band parameters for III–V compound semiconductors and their alloys I. Vurgaftman, Jerry R. Meyer, L. R. Ram‐Mohan · Journal of Applied Physics | Jun 2001 | 7,350 |
| 6 | Improved tetrahedron method for Brillouin-zone integrations Peter E. Blöchl, Ove Jepsen, O. K. Andersen · Physical review. B, Condensed matter | 15 Jun 1994 | 7,345 |
| 7 | High-performance lithium battery anodes using silicon nanowires Candace K. Chan, Hailin Peng, Gao Liu et al. · Nature Nanotechnology | 16 Dec 2007 | 6,691 |
| 8 | High-κ gate dielectrics: Current status and materials properties considerations Glen D. Wilk, Robert M. Wallace, J. Mark Anthony · Journal of Applied Physics | 15 May 2001 | 5,918 |
| 9 | Atomic Layer Deposition: An Overview Steven M. George · Chemical Reviews | 30 Nov 2009 | 5,813 |
| 10 | Temperature dependence of the energy gap in semiconductors Y. P. Varshni · Physica | 1967 | 5,459 |
| 11 | Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solids Martin P. Seah, W. A. Dench · Surface and Interface Analysis | Feb 1979 | 5,335 |
| 12 | A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface Akira Ohtomo, Harold Y. Hwang · Nature | 28 Jan 2004 | 4,735 |
| 13 | Improved Oxygen Reduction Activity on Pt 3 Ni(111) via Increased Surface Site Availability Vojislav R. Stamenković, Ben Fowler, Bongjin Simon Mun et al. · Science | 11 Jan 2007 | 4,406 |
| 14 | Empirical potential for hydrocarbons for use in simulating the chemical vapor deposition of diamond films Donald W. Brenner · Physical review. B, Condensed matter | 15 Nov 1990 | 4,043 |
| 15 | Electron correlation in semiconductors and insulators: Band gaps and quasiparticle energies Mark S. Hybertsen, Steven G. Louie · Physical review. B, Condensed matter | 15 Oct 1986 | 4,011 |
| 16 | Ferroelectric Memories James Floyd Scott, Carlos A. Paz de Araújo · Science | 15 Dec 1989 | 3,867 |
| 17 | Advanced capabilities for materials modelling with Quantum ESPRESSO Paolo Giannozzi et al. · TUScholarShare (Temple University) | 24 Oct 2017 | 3,763 |
| 18 | Linear optical properties in the projector-augmented wave methodology Marek Gajdoš, Kerstin Hummer, Georg Kresse et al. · Physical Review B | 17 Jan 2006 | 3,537 |
| 19 | General Relationship for the Thermal Oxidation of Silicon B. E. Deal, Andrew S. Grove · Journal of Applied Physics | Dec 1965 | 3,448 |
| 20 | Matching properties of MOS transistors Marcel J. M. Pelgrom, Aad C.J. Duinmaijer, A.P.G. Welbers · IEEE Journal of Solid-State Circuits | Oct 1989 | 3,320 |
| 21 | GaAs, AlAs, and Al x Ga1− x As: Material parameters for use in research and device applications Sadao Adachi · Journal of Applied Physics | Aug 1985 | 3,287 |
| 22 | Chemical analysis of graphene oxide films after heat and chemical treatments by X-ray photoelectron and Micro-Raman spectroscopy Dongxing Yang, Aruna Velamakanni, Gülay Bozoklu et al. · Carbon | Oct 2008 | 3,266 |
| 23 | Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks Yi Ping Cui, Charles M. Lieber · Science | 2 Feb 2001 | 3,260 |
| 24 | First-principles calculations for defects and impurities: Applications to III-nitrides Chris G. Van de Walle, Jörg Neugebauer · Journal of Applied Physics | 25 Mar 2004 | 3,256 |
| 25 | Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances Elvira M. C. Fortunato, Pedro Miguel Cândido Barquinha, Rodrigo Martins · Advanced Materials | 10 May 2012 | 3,193 |
| 26 | Quantized conductance of point contacts in a two-dimensional electron gas Bart J. van Wees, Henk van Houten, C. W. J. Beenakker et al. · Physical Review Letters | 29 Feb 1988 | 3,165 |
| 27 | Donor impurity band exchange in dilute ferromagnetic oxides J. M. D. Coey, Munuswamy Venkatesan, C. B. Fitzgerald · Nature Materials | 16 Jan 2005 | 3,061 |
| 28 | Wave-Number-Dependent Dielectric Function of Semiconductors David R. Penn · Physical Review | Dec 1962 | 2,969 |
| 29 | Tunnel field-effect transistors as energy-efficient electronic switches Adrian Mihai Ionescu, Heike Riel · Nature | Nov 2011 | 2,957 |
| 30 | Charge Transport in Disordered Organic Photoconductors a Monte Carlo Simulation Study Heinz Bässler · physica status solidi (b) | 1993 | 2,905 |
| 31 | The electrical properties of polycrystalline silicon films John Y. W. Seto · Journal of Applied Physics | Dec 1975 | 2,901 |
| 32 | GaN, AlN, and InN: A review S. Strite, Hadis MORKOÇ · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena | Jul 1992 | 2,818 |
| 33 | Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System S. Hikami, A. I. Larkin, Yasutaka Nagaoka · Progress of Theoretical Physics | Feb 1980 | 2,803 |
| 34 | Band parameters for nitrogen-containing semiconductors I. Vurgaftman, Jerry R. Meyer · Journal of Applied Physics | 15 Sep 2003 | 2,795 |
| 35 | Extraction of Schottky diode parameters from forward current-voltage characteristics S. K. Cheung, Nathan W. Cheung · Applied Physics Letters | 14 Jul 1986 | 2,776 |
| 36 | Spins in few-electron quantum dots Ronald K. Hanson, Leo P. Kouwenhoven, J. R. Petta et al. · Reviews of Modern Physics | Oct 2007 | 2,699 |
| 37 | The mean free path of electrons in metals E. H. Sondheimer · Advances In Physics | 1952 | 2,617 |
| 38 | Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process Riikka L. Puurunen · Journal of Applied Physics | 15 Jun 2005 | 2,614 |
| 39 | Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces Zhen Zhang, John T. Jr. Yates · Chemical Reviews | 11 Jul 2012 | 2,584 |
| 40 | Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures L. Britnell, Roman Gorbachev, R. Jalil et al. · Science | 3 Feb 2012 | 2,574 |
| 41 | The structural and luminescence properties of porous silicon A. G. Cullis, Leigh Canham, P. D. J. Calcott · Journal of Applied Physics | Aug 1997 | 2,512 |
| 42 | Semiconducting and other major properties of gallium arsenide John S. Blakemore · Journal of Applied Physics | Oct 1982 | 2,497 |
| 43 | Electrical spin injection in a ferromagnetic semiconductor heterostructure Y. Ohno, D. K. Young, Bernd Beschoten et al. · Nature | Dec 1999 | 2,474 |
| 44 | Scalable production of large quantities of defect-free few-layer graphene by shear exfoliation in liquids Keith R. Paton et al. · Nature Materials | 18 Apr 2014 | 2,413 |
| 45 | New interpretations of XPS spectra of nickel metal and oxides Andrew P. Grosvenor, Mark C. Biesinger, Roger St.C. Smart et al. · Surface Science | 20 Feb 2006 | 2,396 |
| 46 | Nanowire transistors without junctions Jean-Pierre Colinge, Chi‐Woo Lee, Aryan Afzalian et al. · Nature Nanotechnology | 21 Feb 2010 | 2,390 |
| 47 | The ReaxFF reactive force-field: development, applications and future directions Thomas Patrick Senftle, Sungwook Leo Hong, Md Mahbubul Islam et al. · npj Computational Materials | 4 Mar 2016 | 2,378 |
| 48 | Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits Kaushik Roy, Subhas Chandra Mukhopadhyay, Hamid Mahmoodi · Proceedings of the IEEE | Feb 2003 | 2,369 |
| 49 | Optical gain in silicon nanocrystals Lorenzo Pavesi, Luca Dal Negro, Cláudio Mazzoleni et al. · Nature | Nov 2000 | 2,317 |
| 50 | The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials Carlo Jacoboni, Lino Reggiani · Reviews of Modern Physics | Jul 1983 | 2,305 |
Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for a field when OpenAlex files it under one of the field's topics; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.