Most cited papers in Semiconductor materials and interfaces
What are the most cited papers in Semiconductor materials and interfaces?
The most cited paper in Semiconductor materials and interfaces is "Polymer Photovoltaic Cells: Enhanced Efficiencies via a Network of Internal Donor-Acceptor Heterojunctions" (Gang Yu, Jun Gao, Jan Cornelis Hummelen et al., 1995), with 10,356 citations. Next come "High-κ gate dielectrics: Current status and materials properties considerations" (5,918) and "Design Rules for Donors in Bulk‐Heterojunction Solar Cells—Towards 10 % Energy‐Conversion Efficiency" (5,207).
Showing 50 of 100 papers. Every paper with more than 978 citations is listed.
| # | Paper | ||
|---|---|---|---|
| 1 | Polymer Photovoltaic Cells: Enhanced Efficiencies via a Network of Internal Donor-Acceptor Heterojunctions Gang Yu, Jun Gao, Jan Cornelis Hummelen et al. · Science | 15 Dec 1995 | 10,356 |
| 2 | High-κ gate dielectrics: Current status and materials properties considerations Glen D. Wilk, Robert M. Wallace, J. Mark Anthony · Journal of Applied Physics | 15 May 2001 | 5,918 |
| 3 | Design Rules for Donors in Bulk‐Heterojunction Solar Cells—Towards 10 % Energy‐Conversion Efficiency Marcus Scharber, D. Mühlbacher, Markus Koppe et al. · Advanced Materials | 22 Feb 2006 | 5,207 |
| 4 | Two-layer organic photovoltaic cell C. W. Tang · Applied Physics Letters | 13 Jan 1986 | 4,989 |
| 5 | Maximally localized generalized Wannier functions for composite energy bands Nicola Marzari, David Vanderbilt · Physical review. B, Condensed matter | 15 Nov 1997 | 4,867 |
| 6 | An Electron Acceptor Challenging Fullerenes for Efficient Polymer Solar Cells Yuze Lin, Jiayu Wang, Zhiguo Zhang et al. · Advanced Materials | 7 Jan 2015 | 4,266 |
| 7 | Modeling solid-state chemistry: Interatomic potentials for multicomponent systems J. Tersoff · Physical review. B, Condensed matter | 15 Mar 1989 | 4,162 |
| 8 | Metal-semiconductor Contacts Mingsheng Li, Ming Li · Kluwer Academic Publishers eBooks | 19 Dec 2005 | 3,976 |
| 9 | Band structure of indium antimonide Evan O'Neill Kane · Journal of Physics and Chemistry of Solids | 1957 | 3,703 |
| 10 | Optical properties and electronic structure of amorphous Ge and Si J. Tauc · Materials Research Bulletin | 1968 | 3,604 |
| 11 | Modelling polycrystalline semiconductor solar cells Marc Burgelman, Peter Nollet, Stefaan Degrave · Thin Solid Films | Feb 2000 | 3,165 |
| 12 | Defects in epitaxial multilayers I. Misfit dislocations Jacqueline M. Matthews · Journal of Crystal Growth | Dec 1974 | 3,096 |
| 13 | Coaxial silicon nanowires as solar cells and nanoelectronic power sources Bozhi Tian, Xiaolin Zheng, Thomas J. Kempa et al. · Nature | Oct 2007 | 2,937 |
| 14 | Extraction of Schottky diode parameters from forward current-voltage characteristics S. K. Cheung, Nathan W. Cheung · Applied Physics Letters | 14 Jul 1986 | 2,776 |
| 15 | Growth of nanowire superlattice structures for nanoscale photonics and electronics Mark S. Gudiksen, Lincoln J. Lauhon, Jianfang F. Wang et al. · Nature | Feb 2002 | 2,712 |
| 16 | Electrooptical effects in silicon Richard A. Soref, Brian R. Bennett · IEEE Journal of Quantum Electronics | 1987 | 2,618 |
| 17 | Impurity Conduction at Low Concentrations Allen H. Miller, Elihu Abrahams · Physical Review | Nov 1960 | 2,591 |
| 18 | Semiconducting and other major properties of gallium arsenide John S. Blakemore · Journal of Applied Physics | Oct 1982 | 2,497 |
| 19 | Photovoltaic materials: Present efficiencies and future challenges Albert Polman, Mark W. Knight, Erik Christian Garnett et al. · Science | 14 Apr 2016 | 2,332 |
| 20 | Theoretical and experimental studies of multiple nucleation Benjamín R. Scharifker, Graham J. Hills · Electrochimica Acta | Jul 1983 | 2,241 |
| 21 | Electrical-Resistivity Model for Polycrystalline Films: the Case of Arbitrary Reflection at External Surfaces A. F. Mayadas, Morris Shatzkes · Physical review. B, Solid state | 15 Feb 1970 | 2,212 |
| 22 | Quantum Theory of Cyclotron Resonance in Semiconductors: General Theory J. M. Luttinger · Physical Review | 15 May 1956 | 2,209 |
| 23 | Intensity of Optical Absorption by Excitons Roger James Elliott · Physical Review | 15 Dec 1957 | 2,139 |
| 24 | Band offsets of wide-band-gap oxides and implications for future electronic devices John D. Robertson · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena | May 2000 | 2,056 |
| 25 | Density functional theory for calculation of elastic properties of orthorhombic crystals: Application to TiSi2 Ponniah Ravindran, Lars Fast, Pavel A. Korzhavyi et al. · Journal of Applied Physics | Nov 1998 | 2,000 |
| 26 | Determination of the Kinetic Parameters of Mixed‐Conducting Electrodes and Application to the System Li3Sb W. Weppner, Robert A. Huggins · Journal of The Electrochemical Society | Oct 1977 | 1,994 |
| 27 | Single‐Junction Organic Photovoltaic Cells with Approaching 18% Efficiency Yong Yan Cui, Huifeng Yao, Jianqi Zhang et al. · Advanced Materials | 29 Mar 2020 | 1,961 |
| 28 | Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide Nanowires Jianfang F. Wang, Mark S. Gudiksen, Xiangfeng Duan et al. · Science | 24 Aug 2001 | 1,853 |
| 29 | Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes HOWARD C. CARD, E. H. Rhoderick · Journal of Physics D Applied Physics | Oct 1971 | 1,802 |
| 30 | Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion Shengbai Zhang, John E. Northrup · Physical Review Letters | Oct 1991 | 1,797 |
| 31 | Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures Roosevelt People, J. C. Bean · Applied Physics Letters | Aug 1985 | 1,759 |
| 32 | Metal-semiconductor contacts E. H. Rhoderick · IEE Proceedings I Solid State and Electron Devices | 1982 | 1,735 |
| 33 | Electrochemical and In Situ X‐Ray Diffraction Studies of Lithium Intercalation in Li x CoO2 Jan N. Reimers, Jeff R. Dahn · Journal of The Electrochemical Society | Aug 1992 | 1,715 |
| 34 | Organometallic Chemistry on Silicon and Germanium Surfaces Jillian M. Buriak · Chemical Reviews | 8 Mar 2002 | 1,710 |
| 35 | BoltzTraP2, a program for interpolating band structures and calculating semi-classical transport coefficients Georg K. H. Madsen, Jesús Carrete, Matthieu Jean Verstraete · Computer Physics Communications | 17 May 2018 | 1,671 |
| 36 | Interfaces in crystalline materials Fernando Flores, R. Saiz-Pardo, Raúl Rincón · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE | 26 Oct 1994 | 1,664 |
| 37 | Surface photovoltage phenomena: theory, experiment, and applications Leeor Kronik · Surface Science Reports | Dec 1999 | 1,648 |
| 38 | Barrier inhomogeneities at Schottky contacts Jürgen H. Werner, Herbert H. Güttler · Journal of Applied Physics | Feb 1991 | 1,646 |
| 39 | Modeling photocurrent action spectra of photovoltaic devices based on organic thin films Leif A. A. Pettersson, Lucimara Stolz Roman, Olle Inganäs · Journal of Applied Physics | Jul 1999 | 1,645 |
| 40 | Band Anticrossing in GaInNAs Alloys W. Shan, W. Walukiewicz, Joel W. Ager et al. · Physical Review Letters | 8 Feb 1999 | 1,627 |
| 41 | Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data Ronald A. Sinton, Andrés Cuevas · Applied Physics Letters | 21 Oct 1996 | 1,613 |
| 42 | Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature Shoji Ikeda, Jun Hayakawa, Yoshito Ashizawa et al. · Applied Physics Letters | 25 Aug 2008 | 1,586 |
| 43 | Electron transport at metal-semiconductor interfaces: General theory R. T. Tung · Physical review. B, Condensed matter | 15 Jun 1992 | 1,527 |
| 44 | Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys Massimo V. Fischetti, S.E. Laux · Journal of Applied Physics | 15 Aug 1996 | 1,514 |
| 45 | Defects in epitaxial multilayers Janet W. Matthews, A. E. Blakeslee · Journal of Crystal Growth | Dec 1974 | 1,504 |
| 46 | A modified forward I - V plot for Schottky diodes with high series resistance H. Norde · Journal of Applied Physics | Jul 1979 | 1,497 |
| 47 | Effects of heavy alkali elements in Cu(In,Ga)Se 2 solar cells with efficiencies up to 22.6% Philip R. Jackson, Roland Wüerz, Dimitrios Hariskos et al. · physica status solidi (RRL) - Rapid Research Letters | 12 Jul 2016 | 1,495 |
| 48 | Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review Jeff B. Casady, Wayne R. Johnson · Solid-State Electronics | Oct 1996 | 1,445 |
| 49 | An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes Lewis M. Terman · Solid-State Electronics | Sep 1962 | 1,439 |
| 50 | Quantitative Determination of Organic Semiconductor Microstructure from the Molecular to Device Scale Jonathan Rivnay, Stefan C. B. Mannsfeld, Chad E. Miller et al. · Chemical Reviews | 9 Aug 2012 | 1,420 |
Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for a field when OpenAlex files it under one of the field's topics; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.