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Institution · Ammono (Poland)

Most cited papers from Ammono (Poland)

Ammono (Poland)

What are the most cited papers from Ammono (Poland)?

The most cited paper from Ammono (Poland) is "Excellent crystallinity of truly bulk ammonothermal GaN" (R. Dwiliński, Roman Doradziński, Jerzy Garczyński et al., 2008), with 322 citations. Next come "Bulk ammonothermal GaN" (162) and "Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives" (128).

Showing 50 of 81 papers. Every paper is listed.

Most cited papers, sortable by citations and release date
#Paper
1 Excellent crystallinity of truly bulk ammonothermal GaN R. Dwiliński, Roman Doradziński, Jerzy Garczyński et al. · Journal of Crystal Growth 19 Jun 2008 322
2 Bulk ammonothermal GaN R. Dwiliński, Roman Doradziński, Jerzy Garczyński et al. · Journal of Crystal Growth 20 Jan 2009 162
3 Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives Marcin Zając, Robert Kucharski, Karolina Grabiańska et al. · Progress in Crystal Growth and Characterization of Materials 2 Jun 2018 128
4 Recent achievements in AMMONO-bulk method R. Dwiliński, Roman Doradziński, Jerzy Garczyński et al. · Journal of Crystal Growth 10 Apr 2010 87
5 Ammonothermal GaN substrates: Growth accomplishments and applications Robert Dwiliński, Roman Doradziński, Jerzy Garczyński et al. · physica status solidi (a) 16 Jun 2011 86
6 AlGaN/GaN HEMT structures on ammono bulk GaN substrate P. Kruszewski, Pawel Prystawko, Irmantas Kašalynas et al. · Semiconductor Science and Technology 17 Apr 2014 66
7 Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds Tomasz Sochacki, Zachary Bryan, Mikolaj Amilusik et al. · Applied Physics Express Open access 28 Jun 2013 63
8 Nonpolar GaN substrates grown by ammonothermal method Robert Kucharski, Mariusz Rudziński, Marcin Zając et al. · Applied Physics Letters 28 Sep 2009 58
9 Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method Daniela S. Gogova, Petar Petrov, Max Buegler et al. · Journal of Applied Physics Open access 28 May 2013 52
10 Vacancy–hydrogen complexes in ammonothermal GaN Filip Tuomisto, Tanja Kuittinen, Marcin Zając et al. · Journal of Crystal Growth 9 Jun 2014 52
11 HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties Tomasz Sochacki, Zachary Bryan, Mikolaj Amilusik et al. · Journal of Crystal Growth 21 Feb 2014 51
12 Non-polar and semi-polar ammonothermal GaN substrates Robert Kucharski, Marcin Zając, Roman Doradziński et al. · Semiconductor Science and Technology 19 Jan 2012 48
13 Homoepitaxy on bulk ammonothermal GaN R. Dwilinski, Roman Doradziński, Jerzy Garczyński et al. · Journal of Crystal Growth 21 Jan 2009 46
14 Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al Andrzej Taube, Eliana Anetka Kaminska, Maciej Kozubal et al. · physica status solidi (a) 13 Feb 2015 45
15 Vacancy defects in bulk ammonothermal GaN crystals Filip Tuomisto, J.‐M. Mäki, Marcin Zając · Journal of Crystal Growth 10 Apr 2010 45
16 AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts Wojciech Wojtasiak, Marcin Góralczyk, Daniel Gryglewski et al. · Micromachines Open access 25 Oct 2018 41
17 Graded-index separate confinement heterostructure InGaN laser diodes Szymon Stańczyk, Tomasz G. Czyszanowski, Anna Kafar et al. · Applied Physics Letters 23 Dec 2013 38
18 InGaN Laser Diode Mini-Arrays P. Perlin, Łucja Marona, Katarzyna Holc et al. · Applied Physics Express 7 Jun 2011 36
19 Photoreflectance study of exciton energies and linewidths for homoepitaxial and heteroepitaxial GaN layers R. Kudrawiec, Mariusz Rudziński, J. Serafińczuk et al. · Journal of Applied Physics May 2009 33
20 Examination of defects and the seed's critical thickness in HVPE‐GaN growth on ammonothermal GaN seed Tomasz Sochacki, Mikolaj Amilusik, Michał Fijałkowski et al. · physica status solidi (b) 16 Dec 2014 30
21 Large-area analysis of dislocations in ammonothermal GaN by synchrotron radiation X-ray topography Sakari Sintonen, Sami Suihkonen, Henri Jussila et al. · Applied Physics Express 29 Aug 2014 30
22 Synchrotron White-Beam X-Ray Topography Analysis of the Defect Structure of HVPE-GaN Substrates Lutz Kirste, A.N. Danilewsky, Tomasz Sochacki et al. · ECS Journal of Solid State Science and Technology Open access 2015 28
23 AlGaInN laser diode technology for GHz high-speed visible light communication through plastic optical fiber and water Stephen P. Najda, P. Perlin, Tadek Suski et al. · Optical Engineering Open access 10 Feb 2016 27
24 Preparation of free-standing GaN substrates from GaN layers crystallized by hydride vapor phase epitaxy on ammonothermal GaN seeds Tomasz Sochacki, Mikolaj Amilusik, B. Łucznik et al. · Japanese Journal of Applied Physics 11 Apr 2014 27
25 Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds Tomasz Sochacki, Mikolaj Amilusik, Mateusz Fijałkowski et al. · Journal of Crystal Growth 16 Sep 2014 27
26 Ammonothermal Growth of GaN Under Ammono-Basic Conditions Roman Doradziński, R. Dwiliński, Jerzy Garczyński et al. · Springer series in materials science Book chapter 2010 27
27 Ammonothermal growth of GaN crystals on HVPE-GaN seeds prepared with the use of ammonothermal substrates Robert Kucharski, Marcin Zając, A. Puchalski et al. · Journal of Crystal Growth 28 Jun 2015 23
28 Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates J. Z. Domagała, Julita Smalc‐Koziorowska, Małgorzata Iwińska et al. · Journal of Crystal Growth 30 Jul 2016 22
29 HVPE-GaN growth on misoriented ammonothermal GaN seeds Tomasz Sochacki, Mikolaj Amilusik, B. Łucznik et al. · Journal of Crystal Growth 7 Jun 2014 20
30 Transparency of GaN substrates in the mid‐infrared spectral range Monika Wełna, R. Kudrawiec, M. Motyka et al. · Crystal Research and Technology 14 Nov 2011 20
31 Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range Robert Kucharski, Łukasz Janicki, Marcin Zając et al. · Crystals Open access 25 Jun 2017 18
32 Structural and Optical Properties of Semipolar GaN Substrates Obtained by Ammonothermal Method Robert Kucharski, Marcin Zając, Roman Doradziński et al. · Applied Physics Express Open access Oct 2010 18
33 InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE C. Skierbiszewski, M. Siekacz, Henryk Turski et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 5 Dec 2011 18
34 Dynamics of thermalization in GaInN/GaN quantum wells grown on ammonothermal GaN Johannes Binder, K.P. Korona, A. Wysmołek et al. · Journal of Applied Physics 10 Dec 2013 18
35 Evolution of impurity incorporation during ammonothermal growth of GaN Sakari Sintonen, Stefanie Wahl, Susanne Richter et al. · Journal of Crystal Growth 24 Aug 2016 17
36 Properties of truly bulk GaN monocrystals grown by ammonothermal method Robert Dwiliński, Roman Doradziński, Jerzy Garczyński et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics 24 Nov 2009 16
37 Growth of GaN epilayers on c-, m-, a-, and (20.1)-plane GaN bulk substrates obtained by ammonothermal method Mariusz Rudziński, R. Kudrawiec, Łukasz Janicki et al. · Journal of Crystal Growth 30 Jun 2011 15
38 Study of neutron irradiated structures of ammonothermal GaN Eugenijus Gaubas, T. Čeponis, Laimonas Deveikis et al. · Journal of Physics D Applied Physics Open access 31 Jan 2017 14
39 HVPE-GaN growth on ammonothermal GaN crystals Tomasz Sochacki, Mikolaj Amilusik, B. Łucznik et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Conference paper 4 Mar 2013 14
40 Contactless electroreflectance of GaN bulk crystals grown by ammonothermal method and GaN epilayers grown on these crystals R. Kudrawiec, J. Misiewicz, Mariusz Rudziński et al. · Applied Physics Letters 11 Aug 2008 13
41 Advances in AlGaInN laser diode technology for defence applications Stephen P. Najda, P. Perlin, T. Suski et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Conference paper 23 May 2013 12
42 (Invited) Manufacturing Microwave AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Truly Bulk Semi-Insulating GaN Substrates Anna Barbara Piotrowska, Eliana Anetka Kaminska, Wojciech Wojtasiak et al. · ECS Transactions Conference paperOpen access 23 Aug 2016 11
43 Dielectric properties of highly resistive GaN crystals grown by ammonothermal method at microwave frequencies Jerzy Krupka, Marcin Zając, Robert Kucharski et al. · AIP Advances Open access Mar 2016 11
44 AlGaInN laser diode technology for defence, security and sensing applications Stephen P. Najda, P. Perlin, Tadek Suski et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Conference paper 31 Oct 2014 11
45 Optical and structural properties of m ‐plane GaN substrates grown by ammonothermal method and GaN epilayers grown on these substrates R. Kudrawiec, Mariusz Rudziński, Robert Kucharski et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics 15 Jun 2010 9
46 Application of contactless electroreflectance to study the epi readiness of m-plane GaN substrates obtained by ammonothermal method R. Kudrawiec, Robert Kucharski, Mariusz Rudziński et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 28 Oct 2010 9
47 Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates Marta Sawicka, Caroline Chèze, Henryk Turski et al. · Applied Physics Letters 18 Mar 2013 9
48 Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001) Jy Kim, Adrian Mihai Ionescu, Rhodri Mansell et al. · Journal of Applied Physics Open access 24 Jan 2017 8
49 Suppression of extended defects propagation in a laser diodes structure grown on (20-21) GaN Łucja Marona, Julita Smalc‐Koziorowska, Ewa Grzanka et al. · Semiconductor Science and Technology Open access 18 Jan 2016 7
50 Atomic force microscopy of partially polished and epi-readyc-plane GaN substrates obtained by an ammonothermal method J. Serafińczuk, Grzegorz Jóźwiak, Piotr Pałetko et al. · Applied Physics Express Open access May 2014 7

Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.