Institution · Ascatron (Sweden)
Most cited papers from Ascatron (Sweden)
What are the most cited papers from Ascatron (Sweden)?
The most cited paper from Ascatron (Sweden) is "Optimization of SiC Power p-i-n Diode Parameters by Proton Irradiation" (Pavel HAZDRA, Stanislav Popelka, Adolf Schöner, 2018), with 24 citations. Next come "Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties" (20) and "Design and Characterization of Newly Developed 10 kV 2 A SiC p-i-n Diode for Soft-Switching Industrial Power Supply" (20).
Showing 38 of 38 papers. Every paper is listed.
| # | Paper | ||
|---|---|---|---|
| 1 | Optimization of SiC Power p-i-n Diode Parameters by Proton Irradiation Pavel HAZDRA, Stanislav Popelka, Adolf Schöner · IEEE Transactions on Electron Devices | 30 Aug 2018 | 24 |
| 2 | Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties S. Sampayan, Paulius V. Grivickas, Adam M. Conway et al. · Scientific Reports | 25 Mar 2021 | 20 |
| 3 | Design and Characterization of Newly Developed 10 kV 2 A SiC p-i-n Diode for Soft-Switching Industrial Power Supply Mietek Bakowski, Per Ranstad, Jang‐Kwon Lim et al. · IEEE Transactions on Electron Devices | 4 Nov 2014 | 20 |
| 4 | Modelling the static on-state current voltage characteristics for a 10 kV 4H–SiC PiN diode Kai Tian, Jinghua Xia, Karim Elgammal et al. · Materials Science in Semiconductor Processing | 7 Apr 2020 | 16 |
| 5 | 3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE) Francesco La Via et al. · Materials science forum | 5 Jun 2018 | 15 |
| 6 | Local Lifetime Control in 4H-SiC by Proton Irradiation Pavel HAZDRA, Stanislav Popelka, Adolf Schöner · Materials science forum | 5 Jun 2018 | 14 |
| 7 | A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications Muhammad Waqar Hussain, Hossein Elahipanah, John E. Zumbro et al. · IEEE Journal of the Electron Devices Society | 2019 | 13 |
| 8 | 50 GHz optical true time delay beamforming in hybrid optical/mm-wave access networks with multi-core optical fiber distribution Álvaro Morales, Idelfonso Tafur Monroy, Fredrik Nordwall et al. · Chinese Optics Letters | 2018 | 13 |
| 9 | 3C-SiC Epitaxy on Deeply Patterned Si(111) Substrates Thomas Kreiliger, Marco Mauceri, Marco Puglisi et al. · Materials science forum | 24 May 2016 | 12 |
| 10 | Dopant imaging of power semiconductor device cross sections Urs Gysin, Ernst Meyer, Thilo Glatzel et al. · Microelectronic Engineering | 2 Mar 2016 | 12 |
| 11 | 30 kV Pulse Diode Stack Based on 4H-SiC Vladimir A. Ilyin, Alexey V. Afanasyev, Yuri S. Demin et al. · Materials science forum | 5 Jun 2018 | 11 |
| 12 | Temperature Dependence of Minority Carrier Lifetime in Epitaxially Grown p+-p–-n+ 4H-SiC Drift Step Recovery Diodes Alexey V. Afanasyev, Boris V. Ivanov, Vladimir A. Ilyin et al. · Materials science forum | 30 Jun 2015 | 9 |
| 13 | Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation Ketil Roed, Dag Øistein Eriksen, Bruno Ceccaroli et al. · IEEE Transactions on Nuclear Science | 5 May 2022 | 8 |
| 14 | Effect of Phosphorus Implantation Prior to Oxidation on Electrical Properties of Thermally Grown SiO2/4H-SiC MOS Structures Aleksey I. Mikhaylov, Tomasz Sledziewski, Alexey V. Afanasyev et al. · Materials science forum | 31 Oct 2014 | 8 |
| 15 | Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices Urs Gysin, Thilo Glatzel, Thomas Schmölzer et al. · Beilstein Journal of Nanotechnology | 28 Dec 2015 | 7 |
| 16 | Reduction of Density of 4H-SiC / SiO2 Interface Traps by Pre-Oxidation Phosphorus Implantation Tomasz Sledziewski, Aleksey I. Mikhaylov, Sergey A. Reshanov et al. · Materials science forum | 26 Feb 2014 | 7 |
| 17 | High-Power 4H-SiC MOSFET with an Epitaxial Buried Channel Aleksey I. Mikhaylov, Alexey V. Afanasyev, Vladimir A. Ilyin et al. · Semiconductors | 2020 | 6 |
| 18 | On the ion implantation of phosphorus as a method for the passivation of states at the interface between 4H-SiC and SiO2 produced by thermal oxidation in dry oxygen Aleksey I. Mikhaylov, А. V. Afanasiev, Vladimir A. Ilyin et al. · Semiconductors | Dec 2014 | 6 |
| 19 | Improving the Design of the Shield for the Electric Field in SiC-Based Schottky-Rectifiers and Ion-Implantation Cascades by SPM Dopant-Imaging Holger Bartolf, Urs Gysin, Thilo Glatzel et al. · Microelectronic Engineering | 9 Apr 2015 | 6 |
| 20 | Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier Hossein Elahipanah, Nicolas Thierry‐Jebali, Sergey A. Reshanov et al. · Materials science forum | 15 May 2017 | 5 |
| 21 | Effect of Neutron Irradiation on Epitaxial 4H-SiC PiN UV-Photodiodes Alexey V. Afanasyev, Vladimir A. Ilyin, Victor V. Luchinin et al. · Materials science forum | 15 May 2017 | 5 |
| 22 | Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide Aleksey I. Mikhaylov, Alexey V. Afanasyev, Vladimir A. Ilyin et al. · Semiconductors | 2016 | 4 |
| 23 | Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging H. Rossmann, Urs Gysin, Alexander Bubendorf et al. · Materials science forum | 24 May 2016 | 3 |
| 24 | High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N2O Atmosphere Aleksey I. Mikhaylov, Sergey A. Reshanov, Adolf Schöner et al. · Materials science forum | 24 May 2016 | 3 |
| 25 | Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO2 Interfaces Aleksey I. Mikhaylov, Alexey V. Afanasyev, Victor V. Luchinin et al. · Materials science forum | 30 Jun 2015 | 3 |
| 26 | Full Epitaxial Trench Type Buried Grid SiC JBS Diodes Sergey A. Reshanov, Adolf Schöner, Wlodek Kaplan et al. · ECS Transactions | 8 Aug 2014 | 3 |
| 27 | Temperature-Dependent Characteristics of 4H-SiC Buried Grid JBS Diodes Jang Kwon Lim, Sergey A. Reshanov, Wlodek Kaplan et al. · Materials science forum | 30 Jun 2015 | 3 |
| 28 | Tailoring the 4H-SiC/SiO 2 MOS-interface for SiC-based power switches Aleksey I. Mikhaylov, Alexey V. Afanasyev, Victor V. Luchinin et al. · Japanese Journal of Applied Physics | 30 Jun 2016 | 2 |
| 29 | Passivation of 4H-SiC/SiO2 Interface Traps by Oxidation of a Thin Silicon Nitride Layer Aleksey I. Mikhaylov, Alexey V. Afanasyev, Victor V. Luchinin et al. · Materials science forum | 30 Jun 2015 | 2 |
| 30 | High Temperature capable SiC Schottky diodes, based on buried grid design. Tomas Hjort, Adolf Schöner, Andy Zhang et al. · Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) | 2014 | 2 |
| 31 | Planarization of Epitaxial SiC Trench Structures by Plasma Ion Etching Andy Zhang, Sergey A. Reshanov, Adolf Schöner et al. · Materials science forum | 30 Jun 2015 | 2 |
| 32 | Analysis of the Gas Phase Epitaxy of Silicon Carbide as a Basic Process for the Technology of Power Electronics Andrei V. Afanasev, Vladimir A. Ilyin, Victor V. Luchinin et al. · Semiconductors | Dec 2021 | 1 |
| 33 | Definition of poles of a linear, time-varying system Richard T. O’Brien | 13 Nov 2002 | 1 |
| 34 | Alternative method of interface traps passivation by introducing of thin silicon nitride layer at 4H-SiC/SiO2 interface Aleksey I. Mikhaylov, Alexey V. Afanasyev, Victor V. Luchinin et al. · MRS Proceedings | 2014 | 1 |
| 35 | Development of power semiconductors by quantitative nanoscale dopant imaging Holger Bartolf, Urs Gysin, H. Rossmann et al. | May 2015 | 1 |
| 36 | Cиловой МДП-транзистор на 4H-SiC с эпитаксиальным заглубленным каналом Aleksandr I. Mikhailov, Andrei V. Afanasev, Vladimir Aleksandrovich Il'in et al. · Физика и техника полупроводников | 20 Dec 2019 | 0 |
| 37 | (Invited) Progress in Buried Grid Technology for Improvements in on-Resistance of High Voltage SiC Devices Adolf Schöner, Hossein Elahipanah, Nicolas Thierry‐Jebali et al. · ECS Transactions | 23 Aug 2016 | 0 |
| 38 | Method for increasing the carrier mobility in the channel of the 4H-SiC MOSFET Aleksey I. Mikhaylov, Alexey V. Afanasyev, Vladimir A. Ilyin et al. · Semiconductors | Jun 2016 | 0 |
Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.