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Institution · Axcelis Technologies (United States)

Most cited papers from Axcelis Technologies (United States)

Axcelis Technologies (United States)

What are the most cited papers from Axcelis Technologies (United States)?

The most cited paper from Axcelis Technologies (United States) is "Short-ranged structural rearrangement and enhancement of mechanical properties of organosilicate glasses induced by ultraviolet radiation" (Francesca Iacopi, Youssef Travaly, B. Eyckens et al., 2006), with 133 citations. Next come "FinFET process refinements for improved mobility and gate work function engineering" (105) and "Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis" (104).

Showing 50 of 60 papers. Every paper with more than 8 citations is listed.

Most cited papers, sortable by citations and release date
#Paper
1 Short-ranged structural rearrangement and enhancement of mechanical properties of organosilicate glasses induced by ultraviolet radiation Francesca Iacopi, Youssef Travaly, B. Eyckens et al. · Journal of Applied Physics Mar 2006 133
2 FinFET process refinements for improved mobility and gate work function engineering Yang‐Kyu Choi, Leland Chang, P. Ranade et al. Conference paper 25 Jun 2003 105
3 Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis P. Normand, Eleftherios Kapetanakis, Panagiotis Dimitrakis et al. · Applied Physics Letters 3 Jul 2003 104
4 Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis Panagiotis Dimitrakis, Eleftherios Kapetanakis, D. Tsoukalas et al. · Solid-State Electronics 29 Apr 2004 67
5 Raman scattering properties of GaN thin films grown on sapphire under visible and ultraviolet excitation Zhe Chuan Feng, Wenyang Wang, S. J. Chua et al. · Journal of Raman Spectroscopy Oct 2001 57
6 Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications P. Normand, Eleftherios Kapetanakis, Panagiotis Dimitrakis et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Open access 4 Dec 2003 46
7 Tunable work function molybdenum gate technology for FDSOI-CMOS P. Ranade, Yang‐Kyu Choi, Daewon Ha et al. Conference paper 25 Jun 2003 45
8 Thermomechanical properties of thin organosilicate glass films treated with ultraviolet-assisted cure Francesca Iacopi, Gerald Beyer, Youssef Travaly et al. · Acta Materialia 14 Dec 2006 39
9 Vacancy-Impurity Complexes in Highly Sb-Doped Si Grown by Molecular Beam Epitaxy M. Rummukainen, Ilja Makkonen, V. Ranki et al. · Physical Review Letters Open access 25 Apr 2005 37
10 Quartz-crystal microbalance study for characterizing atomic oxygen in plasma ash tools Arnav Srivastava, Palanikumaran Sakthivel · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2001 37
11 On the FinFET extension implant energy H.-J. Gossmann, Aditya Agarwal, T.M. Parrill et al. · IEEE Transactions on Nanotechnology Dec 2003 29
12 Thermal furnace and Ultraviolet assisted curing impact on SiOCH spin-on ultra low dielectric constant materials Aziz Zenasni, Bruno Remiat, Carlo Waldfried et al. · Thin Solid Films 24 May 2007 27
13 Characterization of octadecaborane implantation into Si using molecular dynamics Luis A. Marqués, Lourdes Pelaz, Iván Santos et al. · Physical Review B 22 Nov 2006 27
14 Nickel silicidation on n and p-type junctions at 300°C Yu-Long Jiang, Aditya Agarwal, Guo-Ping Ru et al. · Applied Physics Letters 14 Jul 2004 26
15 Liquid Hydrogen Fuel System for Small Unmanned Air Vehicles Karen E. Swider‐Lyons, Michael W. Schuette, Richard O'Neil Stroman et al. · 51st AIAA Aerospace Sciences Meeting including the New Horizons Forum and Aerospace Exposition Conference paper 5 Jan 2013 25
16 Cleaning Solutions for p-MSQ Low-k Device Applications Carlo Waldfried, Orlando Escorcia, Qing Han et al. · Electrochemical and Solid-State Letters Open access 2003 24
17 Measurements of secondary electron emission and plasma density enhancement for plasma exposed surfaces using an optically isolated Faraday cup Shu Qin, Michael P. Bradley, Peter L. Kellerman et al. · Review of Scientific Instruments Mar 2002 24
18 Damage of Low-k and Ultralow-k Dielectrics from Reductive Plasma Discharges Used for Photoresist Removal Darren L. Moore, Richard J. Carter, Hao Cui et al. · Journal of The Electrochemical Society Open access 2005 23
19 Practical Cases of Electric Field Distribution Along Dry and Clean Nonceramic Insulators of High-Voltage Power Lines Weiguo Que, Stephen A. Sebo, Robert J. Hill · IEEE Transactions on Power Delivery Apr 2007 21
20 Nickel silicide formation on shallow junctions Yu-Long Jiang, Aditya Agarwal, Guo-Ping Ru et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms 23 Jul 2005 21
21 Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth Marı́a Aboy, Lourdes Pelaz, Pedro López et al. · Applied Physics Letters 8 May 2006 21
22 Ion beam technologies in the semiconductor world (plenary) John M. Poate, Kourosh Saadatmand · Review of Scientific Instruments Feb 2002 20
23 980-nm picosecond fiber laser Oleg G. Okhotnikov, L.A. Gomes, Ning Xiang et al. · IEEE Photonics Technology Letters 31 Oct 2003 19
24 Radiation-enhanced diffusion of Sb and B in silicon during implantation below 400°C Vincent C. Venezia, Lourdes Pelaz, H. -J. L. Gossmann et al. · Physical Review B 24 Mar 2004 19
25 Improvements in wafer temperature measurements Arnon Afonso de Souza Cardoso, Amit Kumar Srivastava · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Mar 2001 18
26 Rapid thermal processing of silicon wafers with emissivity patterns M. Rabus, A. T. Fiory, Nuggehalli M. Ravindra et al. · Journal of Electronic Materials May 2006 17
27 Plasma Impacts to an O-SiC Low-k Barrier Film Wei Chen, Qingyuan Han, Robert Most et al. · Journal of The Electrochemical Society 2004 16
28 The influence of heavily doped buried layer implants on electrostatic discharge (ESD), latchup, and a silicon germanium heterojunction bipolar transistor in a BiCMOS SiGe technology Steven H. Voldman, L. Lanzerotti, Wesley Morris et al. Conference paper 13 Aug 2004 15
29 Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates Z.C. Feng, Tao Yang, Yunfei Hou · Materials Science in Semiconductor Processing Dec 2001 15
30 Activated He:H2 Strip of Photoresist over Porous Low-k Materials Qing Yuan Han, Brian E. White, Ivan L. Berry et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena Apr 2005 15
31 Elimination of poly-Si gate depletion for sub-65-nm CMOS technologies by excimer laser annealing Hiu Yung Wong, Hideki Takeuchi, Tsu‐Jae King et al. · IEEE Electron Device Letters 21 Mar 2005 14
32 Ultra-shallow junction formation using conventional ion implantation and rapid thermal annealing Aditya Agarwal · 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) Conference paper 10 Jul 2003 14
33 Decaborane ion implantation A. S. Perel, Wade A. Krull, David E. Hoglund et al. · 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) Conference paper 10 Jul 2003 14
34 Hydrogen Fuel Cells for Small Unmanned Air Vehicles Karen E. Swider‐Lyons, Richard O'Neil Stroman, Benjamin D. Gould et al. · ECS Transactions Conference paperOpen access 18 Aug 2014 14
35 Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis P. Normand, Eleftherios Kapetanakis, Panagiotis Dimitrakis et al. · Microelectronic Engineering Open access 5 Apr 2003 14
36 Measurement and analysis of deposition-etch characteristics of BF3 plasma immersion ion implantation Shu Qin, Michael P. Bradley, Peter L. Kellerman et al. · Review of Scientific Instruments Feb 2002 14
37 Molybdenum-gate HfO/sub 2/ CMOS FinFET technology Daewon Ha, Hideki Takeuchi, Yang‐Kyu Choi et al. Conference paper 19 Apr 2005 13
38 Laser thermal processing of amorphous silicon gates to reduce poly-depletion in CMOS devices Yung Fu Chong, H.-J. Gossmann, K. L. Pey et al. · IEEE Transactions on Electron Devices May 2004 13
39 Evaluation of high dose, high energy boron implantation into Cz substrates for epi-replacement in CMOS technology Konstantin K. Bourdelle, Yuanning Chen, Robert A. Ashton et al. · IEEE Transactions on Electron Devices 2001 12
40 Dose Rate Effects: the Impact of Beam Dynamics on Materials Issues and Device Performance M. S. Ameen, M. Harris, Chuong Huynh et al. · AIP conference proceedings Conference paper 2008 12
41 Photoluminescence and photoelectron spectroscopic analysis of InGaAsN grown by metalorganic chemical vapor deposition W. Chang, Jianming Lin, Weiwei Zhou et al. · Applied Physics Letters 31 Dec 2001 11
42 Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth Marı́a Aboy, Lourdes Pelaz, J. Barbolla et al. · Materials Science and Engineering B 20 Sep 2005 10
43 Molecular effect on projected range in ultralow-energy ion implantation Kenji Kimura, Y. Oota, K. Nakajima et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms 23 Apr 2003 10
44 Removal of High-Dose Ion-Implanted 248 nm Deep UV Photoresist Using UV Irradiation and Organic Solvent Diana Tsvetanova, Rita Vos, Kris Vanstreels et al. · Journal of The Electrochemical Society 16 Dec 2010 9
45 Low energy ion beam transport M. Graf, Bo H. Vanderberg, Victor Benveniste et al. Conference paper 2002 9
46 Electrical activation of implanted single crystal germanium substrates C. Jasper, L. Rubin, C. D. Lindfors et al. Conference paper 2002 9
47 Photoresist strip challenges for advanced lithography at 20nm technology node and beyond Ivan L. Berry, Carlo Waldfried, Dwight Dongwan Roh et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Conference paper 16 Mar 2012 9
48 The effect of interatomic potential in molecular dynamics simulation of low energy ion implantation Hui Yu Chan, K. Nordlund, J. Peltola et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms 15 Dec 2004 9
49 Increase of Carbon Substitutionality and Silicon Strain by Molecular Ion Implantation A. Li-Fatou, Amitabh Jain, Wade A. Krull et al. · ECS Transactions Conference paperOpen access 28 Sep 2007 9
50 Enhanced life ion source for germanium and carbon ion implantation Tseh-Jen Hsieh, Neil Colvin, Serguei Kondratenko · AIP conference proceedings Conference paper 2012 9

Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.