Most cited papers from Epistar (Taiwan)

Epistar (Taiwan)

What are the most cited papers from Epistar (Taiwan)?

The most cited paper from Epistar (Taiwan) is "Results of Treatment of 385 Patients With Peritoneal Surface Spread of Appendiceal Malignancy" (Paul H. Sugarbaker, David Wen-Wei Chang, 1999), with 605 citations. Next come "Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates" (242) and "Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers" (235).

Published TypeFieldAccessCitations

Showing 50 of 60 papers. Every paper with more than 28 citations is listed.

Most cited papers, sortable by citations and release date
#	Paper
1	Results of Treatment of 385 Patients With Peritoneal Surface Spread of Appendiceal Malignancy Paul H. Sugarbaker, David Wen-Wei Chang · Annals of Surgical Oncology	Dec 1999	605
2	Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates Ya‐Ju Lee, Jaeyeon Hwang, T. C. Hsu et al. · IEEE Photonics Technology Letters	May 2006	242
3	Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers Yen‐Kuang Kuo, Jih‐Yuan Chang, Miao‐Chan Tsai et al. · Applied Physics Letters	6 Jul 2009	235
4	High-transparency Ni/Au ohmic contact to p -type GaN Jinn‐Kong Sheu, Yan‐Kuin Su, G. C. Chi et al. · Applied Physics Letters	19 Apr 1999	217
5	Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer C. H. Wang, Changchun Ke, Chia‐An Lee et al. · Applied Physics Letters	27 Dec 2010	212
6	Add-on prolonged-release melatonin for cognitive function and sleep in mild to moderate Alzheimer’s disease: a 6-month, randomized, placebo-controlled, multicenter trial Moshe Laudon, Alan G. Wade, Mildred V. Farmer et al. · Clinical Interventions in Aging Open access	Jun 2014	174
7	Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes Shih-Chun Ling, Tien‐Chang Lu, Shih-Pang Chang et al. · Applied Physics Letters	7 Jun 2010	161
8	Strategic planning for technology development with patent analysis Shang Jyh Liu, Joenson Shyu · International Journal of Technology Management	1997	153
9	Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN Jinn‐Kong Sheu, Ying Su, G. C. Chi et al. · Applied Physics Letters	22 Jun 1998	151
10	Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers C. H. Wang, Sheng-Po Chang, Pu-Hsi Ku et al. · Applied Physics Letters	24 Oct 2011	135
11	Synthesis and Luminescent Properties of a New Yellowish-Orange Afterglow Phosphor Y2O2S:Ti,Mg Chia‐Cheng Kang, Ru‐Shi Liu, Jiin‐Chyuan Chang et al. · Chemistry of Materials	18 Sep 2003	128
12	A transparent ZnO nanowire MEMS gas sensor prepared by an ITO micro-heater Ting‐Jen Hsueh, Chien-Hua Peng, Wei-Shou Chen · Sensors and Actuators B Chemical	27 Oct 2019	120
13	Effect of P-Type Last Barrier on Efficiency Droop of Blue InGaN Light-Emitting Diodes Yen‐Kuang Kuo, Miao-Chan Tsai, Sheng‐Horng Yen et al. · IEEE Journal of Quantum Electronics	26 Apr 2010	105
14	The value of carcinoembryonic antigen in patients with carcinoma of the lung R. G. Vincent, T. Ming Chu, Warren W. Lane · Cancer Open access	Aug 1979	94
15	Synthesis of Y[sub 2]O[sub 3]:Eu, Bi Red Phosphors by Homogeneous Coprecipitation and Their Photoluminescence Behaviors L. S. Chi, Ru‐Shi Liu, B. J. Lee · Journal of The Electrochemical Society Open access	2005	88
16	Flower-like ZnCo2O4 nanowires: toward a high-performance anode material for Li-ion batteries Saad Gomaa Mohamed, Tai‐Feng Hung, Chih‐Jung Chen et al. · RSC Advances	2013	86
17	Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells C. H. Wang, Sheng-Po Chang, W. T. Chang et al. · Applied Physics Letters	Nov 2010	85
18	Neon NTT: Faster Dilithium, Kyber, and Saber on Cortex-A72 and Apple M1 Hanno Becker, Vincent Shang-Shouq Hwang, Matthias J. Kannwischer et al. · IACR Transactions on Cryptographic Hardware and Embedded Systems Open access	19 Nov 2021	79
19	High-speed integrated micro-LED array for visible light communication Hao-Yu Lan, I-Chen Tseng, Yung‐Hsiang Lin et al. · Optics Letters	19 Mar 2020	79
20	Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well Chih‐Teng Liao, Miao‐Chan Tsai, Bo-Ting Liou et al. · Journal of Applied Physics	15 Sep 2010	78
21	Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening Ya‐Ju Lee, Hao‐Chung Kuo, S.C. Wang et al. · IEEE Photonics Technology Letters	24 Oct 2005	75
22	Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography S. J. Chang, C.F. Shen, W. S. Chen et al. · Applied Physics Letters	2 Jul 2007	75
23	Effect of N-Type AlGaN Layer on Carrier Transportation and Efficiency Droop of Blue InGaN Light-Emitting Diodes Sheng‐Horng Yen, Miao-Chan Tsai, Meng-Lun Tsai et al. · IEEE Photonics Technology Letters	Jul 2009	73
24	Development and Evaluation of a Wearable Device for Sleep Quality Assessment Chih‐En Kuo, Yi-Che Liu, Da‐Wei Chang et al. · IEEE Transactions on Biomedical Engineering	23 Sep 2016	71
25	Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer Yen‐Kuang Kuo, Miao‐Chan Tsai, Sheng‐Horng Yen · Optics Communications	31 Jul 2009	71
26	Risk Factors for Urinary Incontinence in Women Fabio Parazzini, Enrico Colli, Gianni Origgi et al. · European Urology	2000	68
27	Efficiency improvement of near-ultraviolet InGaN LEDs using patterned sapphire substrates Woei-Kai Wang, Dong-Sing Wuu, Sheng-Han Lin et al. · IEEE Journal of Quantum Electronics	24 Oct 2005	67
28	Inductively coupled plasma etching of GaN using Cl2/Ar and Cl2/N2 gases Jinn‐Kong Sheu, Yan‐Kuin Su, G. C. et al. · Journal of Applied Physics	Feb 1999	67
29	High dielectric permittivity of Li and Ta codoped NiO ceramics Yu‐Jen Hsiao, Yee‐Shin Chang, Te‐Hua Fang et al. · Journal of Physics D Applied Physics	19 Jan 2007	63
30	Improvement in light-output efficiency of near-ultraviolet InGaN–GaN LEDs fabricated on stripe patterned sapphire substrates Ya‐Ju Lee, T. C. Hsu, Hao‐Chung Kuo et al. · Materials Science and Engineering B	26 Jul 2005	62
31	High Uniformity Normally-OFF p-GaN Gate HEMT Using Self-Terminated Digital Etching Technique Hsien‐Chin Chiu, Yi-Sheng Chang, Bohong Li et al. · IEEE Transactions on Electron Devices	Oct 2018	58
32	GaN-Based Light-Emitting Diode With Sputtered AlN Nucleation Layer Cheng-Hsiung Yen, Wei‐Chih Lai, Y.C. Yang et al. · IEEE Photonics Technology Letters	2 Dec 2011	55
33	Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy Tsung-Yi Tang, Wen-Yu Shiao, Cheng-Hung Lin et al. · Journal of Applied Physics	15 Jan 2009	53
34	Threading dislocation evolution in patterned GaN nanocolumn growth and coalescence overgrowth Yung‐Sheng Chen, Wen-Yu Shiao, Tsung-Yi Tang et al. · Journal of Applied Physics	15 Jul 2009	53
35	High Light-Extraction GaN-Based Vertical LEDs With Double Diffuse Surfaces Ya‐Ju Lee, Hao‐Chung Kuo, Tien‐Chang Lu et al. · IEEE Journal of Quantum Electronics	16 Nov 2006	52
36	High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes Chia‐Yen Huang, Peï-Yu Wu, Kai-Shiang Chang et al. · AIP Advances Open access	May 2017	50
37	752-MHz Modulation Bandwidth of High-Speed Blue Micro Light-Emitting Diodes Hao-Yu Lan, I-Chen Tseng, Hsuan-Yun Kao et al. · IEEE Journal of Quantum Electronics	24 Aug 2018	48
38	Shape transformation of nanoporous GaN by annealing: From buried cavities to nanomembranes Christopher D. Yerino, Yu Zhang, Benjamin Leung et al. · Applied Physics Letters	20 Jun 2011	45
39	Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al/sub 0.15/Ga/sub 0.85/N/GaN superlattice Jinn‐Kong Sheu, G.C. Chi, M. J. Jou · IEEE Electron Device Letters	Apr 2001	45
40	Efficiency improvement of a vertical light-emitting diode through surface plasmon coupling and grating scattering Chun-Han Lin, Chieh Hsieh, Charng-Gan Tu et al. · Optics Express Open access	10 Apr 2014	44
41	Deep-ultraviolet light-emitting diodes with gradually increased barrier thicknesses from n-layers to p-layers Miao‐Chan Tsai, Sheng‐Horng Yen, Yen‐Kuang Kuo · Applied Physics Letters	14 Mar 2011	44
42	Analysis of Thermal and Luminous Performance of MR-16 LED Lighting Module Wei-Hao Chi, Tsung-Lin Chou, Cheng-Nan Han et al. · IEEE Transactions on Components and Packaging Technologies	30 Nov 2010	42
43	Investigation of the mechanism for Ti/Al ohmic contact on etched n-GaN surfaces Jinn‐Kong Sheu, Yan‐Kuin Su, G. C. et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena	Mar 2000	40
44	Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer Jinn‐Kong Sheu, G.C. Chi, M. J. Jou · IEEE Photonics Technology Letters	Nov 2001	39
45	Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching Chih-Chiang Kao, Hao‐Chung Kuo, Kuan-Chi Yeh et al. · IEEE Photonics Technology Letters	24 May 2007	38
46	Numerical Study of Blue InGaN Light-Emitting Diodes With Varied Barrier Thicknesses Miao-Chan Tsai, Sheng‐Horng Yen, Ying-Chung Lu et al. · IEEE Photonics Technology Letters	10 Nov 2010	38
47	Indium tin oxide ohmic contact to highly doped n-GaN Jinn‐Kong Sheu, Yan‐Kuin Su, G.C. Chi et al. · Solid-State Electronics	Nov 1999	38
48	GaN-Based Multiquantum Well Light-Emitting Diodes With Tunnel-Junction-Cascaded Active Regions Shoou-Jinn Chang, Wei-Heng Lin, Chun-Ta Yu · IEEE Electron Device Letters	28 Jan 2015	37
49	Cross-sectional sizes and emission wavelengths of regularly patterned GaN and core-shell InGaN/GaN quantum-well nanorod arrays Che‐Hao Liao, Wen-Ming Chang, Yufeng Yao et al. · Journal of Applied Physics	7 Feb 2013	36
50	Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer Sheng-Po Chang, C. H. Wang, C. H. Chiu et al. · Applied Physics Letters	20 Dec 2010	35

Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.