Institution · Macronix International (Taiwan)
Most cited papers from Macronix International (Taiwan)
What are the most cited papers from Macronix International (Taiwan)?
The most cited paper from Macronix International (Taiwan) is "Phase-change random access memory: A scalable technology" (Simone Raoux, Geoffrey W. Burr, M. Breitwisch et al., 2008), with 1,019 citations. Next come "Mechanical behavior of functionally graded material plates under transverse load—Part I: Analysis" (554) and "Recent Progress in Phase-ChangeMemory Technology" (389).
Showing 50 of 60 papers. Every paper with more than 53 citations is listed.
| # | Paper | ||
|---|---|---|---|
| 1 | Phase-change random access memory: A scalable technology Simone Raoux, Geoffrey W. Burr, M. Breitwisch et al. · IBM Journal of Research and Development | Jul 2008 | 1,019 |
| 2 | Mechanical behavior of functionally graded material plates under transverse load—Part I: Analysis Shyang-Ho Chi, Yen-Ling Chung · International Journal of Solids and Structures | 21 Jun 2005 | 554 |
| 3 | Recent Progress in Phase-ChangeMemory Technology Geoffrey W. Burr, Matthew J. BrightSky, Abu Sebastian et al. · IEEE Journal on Emerging and Selected Topics in Circuits and Systems | 15 Apr 2016 | 389 |
| 4 | MOS charge pumps for low-voltage operation Jieh-Tsorng Wu, Kuen-Long Chang · IEEE Journal of Solid-State Circuits | Apr 1998 | 372 |
| 5 | A time-to-digital-converter-based CMOS smart temperature sensor Poki Chen, Chun-Chi Chen, Chin‐Chung Tsai et al. · IEEE Journal of Solid-State Circuits | 27 Jul 2005 | 300 |
| 6 | Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory Th. Nirschl et al. | Dec 2007 | 276 |
| 7 | Mechanical behavior of functionally graded material plates under transverse load—Part II: Numerical results Shyang-Ho Chi, Yen-Ling Chung · International Journal of Solids and Structures | 14 Jun 2005 | 207 |
| 8 | A low-delay CELP coder for the CCITT 16 kb/s speech coding standard J.-H. Chen, RICHARD V. COX, Y.-C. Lin et al. · IEEE Journal on Selected Areas in Communications | Jun 1992 | 185 |
| 9 | Future challenges of flash memory technologies Chih‐Yuan Lu, Kuang-Yeu Hsieh, Rich Liu · Microelectronic Engineering | 3 Sep 2008 | 174 |
| 10 | Ultra-Thin Phase-Change Bridge Memory Device Using GeSb Y. C. Chen et al. | Dec 2006 | 159 |
| 11 | Phase change materials and their application to random access memory technology Simone Raoux, Robert M. Shelby, Jean Jordan‐Sweet et al. · Microelectronic Engineering | Sep 2008 | 156 |
| 12 | Tin whiskers studied by focused ion beam imaging and transmission electron microscopy George T. T. Sheng, Christine Hu, Woon‐Seop Choi et al. · Journal of Applied Physics | Jul 2002 | 139 |
| 13 | BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability Hang-Ting Lue, Szu-Yu Wang, Erh-Kun Lai et al. | 6 Apr 2006 | 138 |
| 14 | Crystallization times of Ge–Te phase change materials as a function of composition Simone Raoux, Huai‐Yu Cheng, Marissa A. Caldwell et al. · Applied Physics Letters | 17 Aug 2009 | 134 |
| 15 | 3D cross-point phase-change memory for storage-class memory Huai‐Yu Cheng, Fabio Carta, Wei-Chih Chien et al. · Journal of Physics D Applied Physics | 8 Aug 2019 | 119 |
| 16 | Novel Lithography-Independent Pore Phase Change Memory M. Breitwisch et al. | Jun 2007 | 112 |
| 17 | Unipolar Switching Behaviors of RTO $\hbox{WO}_{X}$ RRAM Wei-Chih Chien, Y.C. Chen, Erh-Kun Lai et al. · IEEE Electron Device Letters | 20 Jan 2010 | 109 |
| 18 | A highly scalable 8-layer 3D vertical-gate (VG) TFT NAND Flash using junction-free buried channel BE-SONOS device Hang-Ting Lue, Tzu‐Hsuan Hsu, Yi‐Hsuan Hsiao et al. | Jun 2010 | 108 |
| 19 | NVM duet Ren-Shuo Liu, De-yu Shen, Chia-Lin Yang et al. | 24 Feb 2014 | 102 |
| 20 | Mechanisms of interface trap-induced drain leakage current in off-state n-MOSFET's Tse-En Chang, Chimoon Huang, Tahui Wang · IEEE Transactions on Electron Devices | Apr 1995 | 97 |
| 21 | An access-transistor-free (0T/1R) non-volatile resistance random access memory (RRAM) using a novel threshold switching, self-rectifying chalcogenide device Yi‐Chou Chen, C.F. Chen, C.T. Chen et al. | 22 Mar 2004 | 94 |
| 22 | Garbage collection and wear leveling for flash memory: Past and future Ming-Chang Yang, Yu-Ming Chang, Che-Wei Tsao et al. | Nov 2014 | 92 |
| 23 | Optimal Design Methods to Transform 3D NAND Flash into a High-Density, High-Bandwidth and Low-Power Nonvolatile Computing in Memory (nvCIM) Accelerator for Deep-Learning Neural Networks (DNN) Hang-Ting Lue, Po-Kai Hsu, Ming‐Liang Wei et al. | Dec 2019 | 91 |
| 24 | Data retention behavior of a SONOS type two-bit storage flash memory cell Wen-Jer Tsai, N. K. Zous, C.J. Liu et al. | 13 Nov 2002 | 91 |
| 25 | Additive Impact of Childhood Emotional, Physical, and Sexual Abuse on Suicide Attempts among Low‐Income African American Women Page Lyn Anderson, Jasmin A. Tiro, Ann Webb Price et al. · Suicide and Life-Threatening Behavior | Jun 2002 | 89 |
| 26 | Recovery of silicon from kerf loss slurry waste for photovoltaic applications T. Y. Wang, Yu-Chuan Lin, Clifford Yi-Der Tai et al. · Progress in Photovoltaics Research and Applications | 7 Oct 2008 | 88 |
| 27 | Tin whisker growth driven by electrical currents S. H. Liu, Chih Chen, Ping-Jung Liu et al. · Journal of Applied Physics | 28 May 2004 | 87 |
| 28 | Manufacturing Intelligence to Exploit the Value of Production and Tool Data to Reduce Cycle Time Chung-Jen Kuo, Chen–Fu Chien, Jan-Daw Chen · IEEE Transactions on Automation Science and Engineering | 2 Mar 2010 | 87 |
| 29 | Age-based PCM wear leveling with nearly zero search cost Chi-Hao Chen, Pi-Cheng Hsiu, Tei‐Wei Kuo et al. | 31 May 2012 | 86 |
| 30 | Future Prospects of NAND Flash Memory Technology—The Evolution from Floating Gate to Charge Trapping to 3D Stacking Chih-Yuan Lu · Journal of Nanoscience and Nanotechnology | Oct 2012 | 85 |
| 31 | Theory and Methodology for Determining Nanoparticle Affinity for Heteroaggregation in Environmental Matrices Using Batch Measurements Lauren Elizabeth Barton, Mathieu Thérézien, Mélanie Auffan et al. · Environmental Engineering Science | 16 Jun 2014 | 84 |
| 32 | Influence of interfaces and doping on the crystallization temperature of Ge–Sb Simone Raoux, Huai‐Yu Cheng, Jean Jordan‐Sweet et al. · Applied Physics Letters | 4 May 2009 | 83 |
| 33 | A high performance phase change memory with fast switching speed and high temperature retention by engineering the GexSbyTez phase change material Huai‐Yu Cheng, T. H. Hsu, Simone Raoux et al. | Dec 2011 | 83 |
| 34 | The vasorelaxation of Antrodia camphorata mycelia: Involvement of endothelial Ca2+-NO-cGMP pathway Guei-Jane Wang, Hsiang‐Wen Tseng, Cheng‐Jen Chou et al. · Life Sciences | 12 Aug 2003 | 77 |
| 35 | A simulated annealing algorithm for facility layout problems under variable demand in Cellular Manufacturing Systems T.Y. Wang, Kenan Wu, Yanggai Liu · Computers in Industry | Sep 2001 | 77 |
| 36 | The impact of agency context, policies, and practices on violence against police Lorie A. Fridell, Don Faggiani, Bruce Taylor et al. · Journal of Criminal Justice | 25 Oct 2009 | 76 |
| 37 | Phase transitions in Ge–Te phase change materials studied by time-resolved x-ray diffraction Simone Raoux, Becky Muñoz, Huai‐Yu Cheng et al. · Applied Physics Letters | 5 Oct 2009 | 76 |
| 38 | ALD-based confined PCM with a metallic liner toward unlimited endurance William Wu Kim, Matthew J. BrightSky, Takeshi Masuda et al. | Dec 2016 | 75 |
| 39 | A forming-free WOx resistive memory using a novel self-aligned field enhancement feature with excellent reliability and scalability Wei-Chih Chien, Y.R. Chen, Y.C. Chen et al. | Dec 2010 | 75 |
| 40 | Performance Impacts of Analog ReRAM Non-ideality on Neuromorphic Computing Yu‐Hsuan Lin, Chao‐Hung Wang, Ming-Hsiu Lee et al. · IEEE Transactions on Electron Devices | Feb 2019 | 74 |
| 41 | A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory Erh-Kun Lai, Hang-Ting Lue, Yi‐Hsuan Hsiao et al. | Dec 2006 | 70 |
| 42 | A Fuzzy Ontological Knowledge Document Clustering Methodology Amy J.C. Trappey, Charles V. Trappey, Fu‐Chiang Hsu et al. · IEEE Transactions on Systems Man and Cybernetics Part B (Cybernetics) | 24 Mar 2009 | 67 |
| 43 | Numerical Simulation of Bottom Oxide Thickness Effect on Charge Retention in SONOS Flash Memory Cells Shaw-Hung Gu, Chih-Wei Hsu, Tahui Wang et al. · IEEE Transactions on Electron Devices | 2007 | 66 |
| 44 | Device, circuit and system-level analysis of noise in multi-bit phase-change memory Gael F. Close, Urs Frey, M. Breitwisch et al. | Dec 2010 | 66 |
| 45 | Overemployment mismatches: the preference for fewer work hours Lonnie M. Golden, Tesfayi Gebreselassie · Monthly labor review | Apr 2007 | 65 |
| 46 | Overview and outlook of emerging non-volatile memories Mengwei Si, Huai‐Yu Cheng, Takashi Ando et al. · MRS Bulletin | Oct 2021 | 64 |
| 47 | A critical examination of 3D stackable NAND Flash memory architectures by simulation study of the scaling capability Yi‐Hsuan Hsiao, Hang-Ting Lue, Tzu‐Hsuan Hsu et al. | 2010 | 64 |
| 48 | The impact of film thickness and melt-quenched phase on the phase transition characteristics of Ge2Sb2Te5 Huai‐Yu Cheng, Simone Raoux, Yi‐Chou Chen · Journal of Applied Physics | Apr 2010 | 63 |
| 49 | A Study on OTS-PCM Pillar Cell for 3-D Stackable Memory Wei-Chih Chien, C. W. Yeh, Robert L. Bruce et al. · IEEE Transactions on Electron Devices | Nov 2018 | 61 |
| 50 | Investigation of oxide charge trapping and detrapping in a MOSFET by using a GIDL current technique Tze‐Fang Wang, Ting-Wei Chang, L.P. Chiang et al. · IEEE Transactions on Electron Devices | Jul 1998 | 60 |
Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.