Institution · MCNC Research and Development Institute
Most cited papers from MCNC Research and Development Institute
What are the most cited papers from MCNC Research and Development Institute?
The most cited paper from MCNC Research and Development Institute is "Thin-Film Permeation-Barrier Technology for Flexible Organic Light-Emitting Devices" (John S. Lewis, Michael S. Weaver, 2004), with 503 citations. Next come "Rotary traveling-wave oscillator arrays: a new clock technology" (298) and "MOCVD of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applications" (287).
Showing 50 of 60 papers. Every paper with more than 50 citations is listed.
| # | Paper | ||
|---|---|---|---|
| 1 | Thin-Film Permeation-Barrier Technology for Flexible Organic Light-Emitting Devices John S. Lewis, Michael S. Weaver · IEEE Journal of Selected Topics in Quantum Electronics | 2004 | 503 |
| 2 | Rotary traveling-wave oscillator arrays: a new clock technology John Wood, Terry C. Edwards, Steve Lipa · IEEE Journal of Solid-State Circuits | 2001 | 298 |
| 3 | MOCVD of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applications R. Venkatasubramanian, T.S. Colpitts, E. Watko et al. · Journal of Crystal Growth | 1997 | 287 |
| 4 | Highly flexible transparent electrodes for organic light-emitting diode-based displays Jay S. Lewis, Sonia Grego, Babu R. Chalamala et al. · Applied Physics Letters | 18 Oct 2004 | 267 |
| 5 | A VLSI fuzzy logic controller with reconfigurable, cascadable architecture Hiroyuki Watanabe, W.D. Dettloff, K.E. Yount · IEEE Journal of Solid-State Circuits | Apr 1990 | 262 |
| 6 | Mechanism of negative-bias-temperature instability C. E. Blat, Edward H. Nicollian, Edward H. Poindexter · Journal of Applied Physics | Feb 1991 | 243 |
| 7 | Modeling Rapid Thermal Diffusion of Arsenic and Boron in Silicon Richard B. Fair, J. J. Wortman, J. Liu · Journal of The Electrochemical Society | Oct 1984 | 158 |
| 8 | Contribution of electrodes and microstructures to the electrical properties of Pb(Zr0.53Ti0.47)O3 thin film capacitors Husam Niman Alshareef, Angus I. Kingon, X. Chen et al. · Journal of materials research/Pratt's guide to venture capital sources | Nov 1994 | 157 |
| 9 | Influence of platinum interlayers on the electrical properties of RuO2/Pb(Zr0.53Ti0.47)O3/RuO2 capacitor heterostructures Husam Niman Alshareef, K. R. Bellur, Angus I. Kingon et al. · Applied Physics Letters | 9 Jan 1995 | 147 |
| 10 | Oriented ferroelectric La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O heterostructures on [001] Pt/SiO2 Si substrates using a bismuth titanate template layer Ramamoorthy Ramesh, J. Lee, Tim D. Sands et al. · Applied Physics Letters | 9 May 1994 | 144 |
| 11 | Mechanisms of amorphization and recrystallization in ion implanted III–V compound semiconductors D. K. Sadana · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms | Mar 1985 | 138 |
| 12 | Identification of ground targets from sequential high-range-resolution radar signatures Xuejun Liao, Paul R. Runkle, Lawrence Carin · IEEE Transactions on Aerospace and Electronic Systems | Oct 2002 | 129 |
| 13 | Low-temperature organometallic epitaxy and its application to superlattice structures in thermoelectrics R. Venkatasubramanian, T.S. Colpitts, Brooks O’Quinn et al. · Applied Physics Letters | 23 Aug 1999 | 129 |
| 14 | Chemical Vapor Deposition of Copper from Copper (II) Hexafluoroacetylacetonate Dorota S. Temple, Arnold Reisman · Journal of The Electrochemical Society | Nov 1989 | 127 |
| 15 | Characterizing intrusion tolerant systems using a state transition model Katerina Goševa-Popstojanova, Feiyi Wang, Rong Wang et al. | 13 Nov 2002 | 121 |
| 16 | Formation of epitaxial CoSi2 films on (001) silicon using Ti-Co alloy and bimetal source materials S. L. Hsia, Teng Yong Tan, Peter Smith et al. · Journal of Applied Physics | 15 Dec 1991 | 120 |
| 17 | Spectroscopic ellipsometry: A new tool for nondestructive depth profiling and characterization of interfaces Patrick J. McMarr, Kuppuswami Vedam, J. Narayan · Journal of Applied Physics | Feb 1986 | 113 |
| 18 | Residual defects following rapid thermal annealing of shallow boron and boron fluoride implants into preamorphized silicon C. Carter, W. Maszara, D. K. Sadana et al. · Applied Physics Letters | 15 Feb 1984 | 105 |
| 19 | Defect annihilation in shallow p+ junctions using titanium silicide D. S. Wen, P. L. Smith, C. M. Osburn et al. · Applied Physics Letters | 12 Oct 1987 | 104 |
| 20 | Geographical Data Structures Compared: A Study of Data Structures Supporting Region Queries Jonathan B. Rosenberg · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems | 1985 | 103 |
| 21 | Optimum and suboptimum algorithms for input encoding and its relationship to logic minimization Shipin Yang, Maciej J. Ciesielski · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems | 1991 | 97 |
| 22 | Testability-Driven Random Test-Pattern Generation R. Lisanke, F. Brglez, A.J. de Geus et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems | Nov 1987 | 96 |
| 23 | Hardware-based weighted random pattern generation for boundary scan F. Brglez, Clay Gloster, Gershon Kedem | 13 Jan 2003 | 94 |
| 24 | Simulation of arbitrary transmission line networks with nonlinear terminations D. Winklestein, Michael B. Steer, R. Pomerleau · IEEE Transactions on Circuits and Systems | Apr 1991 | 89 |
| 25 | Electrodes for ferroelectric thin films Husam Niman Alshareef, K. D. Gifford, Shang Hsien Rou et al. · Integrated ferroelectrics | Dec 1993 | 87 |
| 26 | The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation Yudong Kim, Hisham Z. Massoud, Richard B. Fair · Journal of Electronic Materials | Mar 1989 | 84 |
| 27 | Analysis of the effects of scaling on interconnect delay in ULSI circuits Shilpa Bothra, Bridget R. Rogers, Mark D. Kellam et al. · IEEE Transactions on Electron Devices | Mar 1993 | 83 |
| 28 | Benchmarks for layout synthesis---evolution and current status Krzysztof Koźmiński | 1991 | 82 |
| 29 | Rapid thermal annealing of arsenic and boron-implanted silicon J. Narayan, O. W. Holland, Robert E. Eby et al. · Applied Physics Letters | 15 Nov 1983 | 82 |
| 30 | Control of structure and electrical properties of lead-zirconium-titanate-based ferroelectric capacitors produced using a layer-by-layer ion beam sputter-deposition technique Orlando H. Auciello, K. D. Gifford, Angus I. Kingon · Applied Physics Letters | 23 May 1994 | 82 |
| 31 | Radiation‐Induced Neutral Electron Trap Generation in Electrically Biased Insulated Gate Field Effect Transistor Gate Insulators Mark D. Walters, Arnold Reisman · Journal of The Electrochemical Society | Sep 1991 | 81 |
| 32 | Influence of Dynamic Gap Junction Resistance on Impulse Propagation in Ventricular Myocardium: A Computer Simulation Study Alexandra P. Henriquez, Rolf Vogel, Barbara J. Muller-Borer et al. · Biophysical Journal | Oct 2001 | 79 |
| 33 | Lung Models: Strengths and Limitations T.B. Martonen, Cynthia J. Musante, Rebecca A. Segal et al. · Respiratory Care | Jun 2000 | 76 |
| 34 | On the physical and logical topology design of large-scale optical networks Yufeng Xin, George N. Rouskas, Harry G. Perros · Journal of Lightwave Technology | Apr 2003 | 70 |
| 35 | A new MOS-gated power thyristor structure with turn-off achieved by controlling the base resistance Mahalingam Nandakumar, B. Jayant Baliga, M.S. Shekar et al. · IEEE Electron Device Letters | May 1991 | 68 |
| 36 | Germanium Implantation into Silicon: An Alternate Pre‐Amorphization/Rapid Thermal Annealing Procedure for Shallow Junction Formation D. K. Sadana, W. Maszara, J. J. Wortmann et al. · Journal of The Electrochemical Society | Apr 1984 | 67 |
| 37 | Rapid thermal curing of BCB dielectric Phil E. Garrou, Robert H. Heistand, Mitchell G. Dibbs et al. · IEEE Transactions on Components Hybrids and Manufacturing Technology | 1993 | 67 |
| 38 | Point Defect Charge‐State Effects on Transient Diffusion of Dopants in Si Richard B. Fair · Journal of The Electrochemical Society | Feb 1990 | 67 |
| 39 | Incorporation of metal silicides and refractory metals in VLSI technology C. M. Osburn, Q.F. Wang, Mark D. Kellam et al. · Applied Surface Science | Nov 1991 | 65 |
| 40 | Characteristics of the emitter-switched thyristor M.S. Shekar, B. Jayant Baliga, Mahalingam Nandakumar et al. · IEEE Transactions on Electron Devices | Jul 1991 | 64 |
| 41 | BLITZEN: A highly integrated massively parallel machine Donald W. Blevins, Edward W. Dams, Robert A. Heaton et al. · Journal of Parallel and Distributed Computing | Feb 1990 | 64 |
| 42 | Just-in-time optical burst switching implementation in the atdnet all-optical networking testbed Ilya Baldin, Mark Cassada, Arnold W. Bragg et al. | 8 Jul 2004 | 62 |
| 43 | The effect of deposition parameters on the properties of yttria-stabilized zirconia thin films David E Ruddell, Brian R. Stoner, Jeffrey Y. Thompson · Thin Solid Films | Nov 2003 | 62 |
| 44 | Density-functional calculations of the structure and stability of C240 Darrin M. York, Jian Ping Lu, Weitao Yang · Physical review. B, Condensed matter | 15 Mar 1994 | 62 |
| 45 | Ultra-shallow junction formation using silicide as a diffusion source and low thermal budget Q. Wang, C. M. Osburn, C. A. Canovai · IEEE Transactions on Electron Devices | 1992 | 60 |
| 46 | Phase evolution and annealing effects on the electrical properties of Pb(Zr0.53Ti0.47)O3 thin films with RuO2 electrodes Husam Niman Alshareef, K. R. Bellur, Orlando H. Auciello et al. · Thin Solid Films | Feb 1995 | 60 |
| 47 | Challenges to manufacturing submicron, ultra-large scale integrated circuits Richard B. Fair · Proceedings of the IEEE | 1990 | 60 |
| 48 | Characterization of conduction in PZT thin films produced by laser ablation deposition X. Chen, Angus I. Kingon, Lucy-Marie Mantese et al. · Integrated ferroelectrics | Dec 1993 | 56 |
| 49 | Generation and annealing of defects in silicon dioxide Arnold Reisman, C. Kenneth Williams, José R. Maldonado · Journal of Applied Physics | Aug 1987 | 54 |
| 50 | Synthesis and characterization of Pb (ZrxTi1−x)O3 thin films produced by an automated laser ablation deposition technique Orlando H. Auciello, Lucy-Marie Mantese, J. Duarte et al. · Journal of Applied Physics | 15 May 1993 | 54 |
Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.