Institution · Norstel (Sweden)
Most cited papers from Norstel (Sweden)
What are the most cited papers from Norstel (Sweden)?
The most cited paper from Norstel (Sweden) is "The silicon vacancy in SiC" (Erik Janzén, Ádám Gali, Patrick Carlsson et al., 2009), with 137 citations. Next come "Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques" (78) and "Excitation properties of the divacancy in 4H -SiC" (76).
Showing 50 of 81 papers. Every paper is listed.
| # | Paper | ||
|---|---|---|---|
| 1 | The silicon vacancy in SiC Erik Janzén, Ádám Gali, Patrick Carlsson et al. · Physica B Condensed Matter | 11 Sep 2009 | 137 |
| 2 | Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques Anne Henry, Jawad Ul‐Hassan, J. Peder Bergman et al. · Chemical Vapor Deposition | 21 Aug 2006 | 78 |
| 3 | Excitation properties of the divacancy in 4H -SiC Björn Magnusson, Nguyên Tiên Són, András Csо́rе́ et al. · Physical review. B./Physical review. B | 5 Nov 2018 | 76 |
| 4 | Defects and carrier compensation in semi-insulating 4H−SiC substrates Nguyên Tiên Són, Patrick Carlsson, Jawad Ul‐Hassan et al. · Physical Review B | 12 Apr 2007 | 71 |
| 5 | Identification and tunable optical coherent control of transition-metal spins in silicon carbide Tom Bosma, Gerrit J. J. Lof, Carmem M. Gilardoni et al. · npj Quantum Information | 25 Sep 2018 | 70 |
| 6 | Silicon carbide—a high-transparency nonlinear material for THz applications Mira Naftaly, John F. Molloy, Björn Magnusson et al. · Optics Express | Feb 2016 | 68 |
| 7 | HTCVD Grown Semi-Insulating SiC Substrates Alexsandre Ellison, Björn Magnusson, Nguyên Tiên Són et al. · Materials science forum | 15 Sep 2003 | 63 |
| 8 | SiC Crystal Growth by HTCVD Alexsandre Ellison, Björn Magnusson, Björn Sundqvist et al. · Materials science forum | 15 Jun 2004 | 62 |
| 9 | Defects in High-Purity Semi-Insulating SiC Nguyên Tiên Són, Björn Magnusson, Z. Zolnai et al. · Materials science forum | 15 Jun 2004 | 62 |
| 10 | Optical Characterization of Deep Level Defects in SiC Björn Magnusson, Erik Janzén · Materials science forum | 15 May 2005 | 54 |
| 11 | Characterisation and Defects in Silicon Carbide Peder Bergman, H. Jakobsson, Liutauras Storasta et al. · Materials science forum | Apr 2002 | 44 |
| 12 | Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor Carl G. Hemmingsson, T. Paskova, Galia Pozina et al. · Journal of Crystal Growth | 9 Dec 2006 | 40 |
| 13 | Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments Alexsandre Ellison, Jie Zhang, W. Magnusson et al. · Materials science forum | 10 May 2000 | 38 |
| 14 | Defects in Semi-Insulating SiC Substrates Nguyên Tiên Són, Björn Magnusson, Z. Zolnai et al. · Materials science forum | 15 Sep 2003 | 33 |
| 15 | Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactor Carl G. Hemmingsson, T. Paskova, Galia Pozina et al. · Superlattices and Microstructures | Oct 2006 | 30 |
| 16 | Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-voltage 4H-SiC Schottky Diodes Qamar-ul Wahab, Alexsandre Ellison, Christer Hallin et al. · Materials science forum | 10 May 2000 | 26 |
| 17 | Spin-relaxation times exceeding seconds for color centers with strong spin–orbit coupling in SiC Carmem M Gilardoni, Tom Bosma, Danny van Hien et al. · New Journal of Physics | Oct 2020 | 23 |
| 18 | Intrinsic defects in high-purity SiC Erik Janzén, Nguyên Tiên Són, Björn Magnusson et al. · Microelectronic Engineering | 18 Nov 2005 | 23 |
| 19 | Prominent defects in semi-insulating SiC substrates Nguyên Tiên Són, Patrick Carlsson, Andreas Gällström et al. · Physica B Condensed Matter | 4 Sep 2007 | 22 |
| 20 | Optical identification and electronic configuration of tungsten in 4H- and 6H-SiC Andreas Gällström, Björn Magnusson, Franziska Christine Beyer et al. · Physica B Condensed Matter | 25 Sep 2011 | 20 |
| 21 | High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers Tsunenobu Kimoto, Qamar-ul Wahab, Alexsandre Ellison et al. · Materials science forum | Feb 1998 | 20 |
| 22 | CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers Robin Karhu, E.Ö. Sveinbjörnsson, Björn Magnusson et al. · Journal of Applied Physics | 25 Jan 2019 | 19 |
| 23 | Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy Anne Henry, Alexsandre Ellison, Urban Forsberg et al. · Materials science forum | Apr 2002 | 19 |
| 24 | CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal Plane Christer Hallin, Alexsandre Ellison, Ivan Gueorguiev Ivanov et al. · Materials science forum | Feb 1998 | 17 |
| 25 | EPR andab initiocalculation study on the EI4 center in 4H - and 6H-SiC Patrick Carlsson, Nguyên Tiên Són, Ádám Gali et al. · Physical Review B | 8 Dec 2010 | 15 |
| 26 | In Situ Etching of 4H-SiC in H2 with Addition of HCl for Epitaxial CVD Growth Jie Zhang, Olof Kordina, Alexsandre Ellison et al. · Materials science forum | Apr 2002 | 15 |
| 27 | Optical Identification of Mo Related Deep Level Defect in 4H and 6H SiC Andreas Gällström, Björn Magnusson, Erik Janzén · Materials science forum | 2 Mar 2009 | 13 |
| 28 | The effect of the temperature on the Bipolar Degradation of 3.3 kV 4H-SiC PiN diodes Pierre Brosselard, A. Tomas, Niels Olsen Saraiva Câmara et al. | May 2008 | 12 |
| 29 | Temperature-Dependent Hall Effect Measurements in Low – Compensated p-Type 4H-SiC L. Kasamakova-Kolaklieva, Liutauras Storasta, Ivan Gueorguiev Ivanov et al. · Materials science forum | 15 Jun 2004 | 12 |
| 30 | Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD Alexsandre Ellison, Tsunenobu Kimoto, Ivan Gueorguiev Ivanov et al. · Materials science forum | Feb 1998 | 12 |
| 31 | Properties of the UD-1 Deep-Level Center in 4H-SiC Björn Magnusson, Alexsandre Ellison, Erik Janzén · Materials science forum | Apr 2002 | 11 |
| 32 | Optimization of SiC MESFET for High Power and High Frequency Applications Niclas Ejebjörk, Herbert Zirath, Peder Bergman et al. · Materials science forum | 28 Mar 2011 | 11 |
| 33 | Chromium in 4H and 6H SiC: Photoluminescence and Zeeman Studies Nguyên Tiên Són, Alexsandre Ellison, Michael F. MacMillan et al. · Materials science forum | Feb 1998 | 11 |
| 34 | Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC Z. Zolnai, Nguyên Tiên Són, Björn Magnusson et al. · Materials science forum | 15 Jun 2004 | 10 |
| 35 | Identification of divacancies in 4H-SiC Nguyên Tiên Són, Takahide Umeda, Junichi Isoya et al. · Physica B Condensed Matter | 31 Jan 2006 | 10 |
| 36 | Presence of Hydrogen in SiC Anne Henry, Björn Magnusson, Margareta K. Linnarsson et al. · Materials science forum | 17 Jan 2001 | 8 |
| 37 | Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD Films Qamar-ul Wahab, Alexsandre Ellison, Jie Zhang et al. · Materials science forum | 10 May 2000 | 8 |
| 38 | Outcomes of adults with invasive meningococcal disease with reduced penicillin susceptibility in Auckland 2004–2017 Matthew T Broom, Emma Best, Helen Heffernan et al. · Infection | 18 Aug 2022 | 7 |
| 39 | Morphology Control for Growth of Thick Epitaxial 4H SiC Layers Jie Zhang, Alexsandre Ellison, Erik Janzén · Materials science forum | 10 May 2000 | 7 |
| 40 | High temperature behaviour of 3.5 kV 4H-SiC JBS diodes Pierre Brosselard, X. Jordà, Miquel Vellvehi et al. | May 2007 | 7 |
| 41 | Vanadium-related Center in 4H Silicon Carbide Björn Magnusson, Matthias Wagner, Nguyên Tiên Són et al. · Materials science forum | 10 May 2000 | 7 |
| 42 | Neutron Irradiation of 4H SiC Fredrik Carlsson, Liutauras Storasta, Björn Magnusson et al. · Materials science forum | 17 Jan 2001 | 7 |
| 43 | Epitaxial growth of thin 4H-SiC layers with uniform doping depth profile Jawad Ul‐Hassan, Anne Henry, J. Peder Bergman et al. · Thin Solid Films | 28 Jan 2006 | 7 |
| 44 | Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC Nguyên Tiên Són, Takahide Umeda, Junichi Isoya et al. · Materials science forum | 15 Oct 2006 | 6 |
| 45 | Growth of High Quality p-Type 4H-SiC Substrates by HTCVD Björn Sundqvist, Alexsandre Ellison, Adam Jönsson et al. · Materials science forum | 15 Sep 2003 | 6 |
| 46 | As-Grown and Process-Induced Intrinsic Deep-Level Luminescence in 4H-SiC Björn Magnusson, Alexsandre Ellison, F.H.C. Carlsson et al. · Materials science forum | 17 Jan 2001 | 6 |
| 47 | Mapping of Threading Screw Dislocations in 4H n-Type SiC Wafers Alexandre Ellison, Erik Sörman, Björn Sundqvist et al. · Materials science forum | 24 May 2016 | 5 |
| 48 | Manga: Manufacturable GaN SiC substrates and GaN epi wafer supply chain M. Mikulla, Sabine Storm, Niklas Henelius et al. | Oct 2014 | 5 |
| 49 | Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation Nguyên Tiên Són, Patrick Carlsson, Björn Magnusson et al. · Materials science forum | 15 Sep 2007 | 5 |
| 50 | Intrinsic Defects in HPSI 6H-SiC: an EPR Study Patrick Carlsson, Nguyên Tiên Són, Björn Magnusson et al. · Materials science forum | 26 Sep 2008 | 5 |
Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.