Institution · Okmetic (Finland)
Most cited papers from Okmetic (Finland)
What are the most cited papers from Okmetic (Finland)?
The most cited paper from Okmetic (Finland) is "Effects of Plasma Activation on Hydrophilic Bonding of Si and SiO[sub 2]" (Tommi Suni, Kimmo Henttinen, I. Suni et al., 2002), with 330 citations. Next come "200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration" (157) and "3D baseline seismics at Ketzin, Germany: The CO2SINK project" (130).
Showing 50 of 62 papers. Every paper with more than 5 citations is listed.
| # | Paper | ||
|---|---|---|---|
| 1 | Effects of Plasma Activation on Hydrophilic Bonding of Si and SiO[sub 2] Tommi Suni, Kimmo Henttinen, I. Suni et al. · Journal of The Electrochemical Society | 2002 | 330 |
| 2 | 200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration Xiangdong Li, Marleen Van Hove, Ming Zhao et al. · IEEE Electron Device Letters | 16 May 2017 | 157 |
| 3 | 3D baseline seismics at Ketzin, Germany: The CO2SINK project Christopher Juhlin, Rüdiger Giese, Kim Zinck-Jørgensen et al. · Geophysics | 2007 | 130 |
| 4 | High temperature chemical vapor deposition of SiC Olof Kordina, Christer Hallin, A. Ellison et al. · Applied Physics Letters | 2 Sep 1996 | 128 |
| 5 | Growth of SiC by ?Hot-Wall? CVD and HTCVD Olof Kordina, Christer Hallin, Anne Henry et al. · physica status solidi (b) | Jul 1997 | 127 |
| 6 | High temperature CVD growth of SiC A. Ellison, J. Zhang, Jeffrey M. Peterson et al. · Materials Science and Engineering B | Jul 1999 | 90 |
| 7 | A 3D micromechanical compass Jukka M. Kyynarainen, Jaakko Saarilahti, H. Kattelus et al. · Sensors and Actuators A Physical | 5 Sep 2007 | 88 |
| 8 | Chemically Stable Atomic-Layer-Deposited Al2O3 Films for Processability Mikael Broas, Olli Kanninen, Vesa Vuorinen et al. · ACS Omega | 11 Jul 2017 | 84 |
| 9 | Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration Xiangdong Li, Marleen Van Hove, Ming Zhao et al. · IEEE Electron Device Letters | 7 May 2018 | 72 |
| 10 | Polytype stability in seeded sublimation growth of 4H–SiC boules Rositza Yakimova, Mikael Syväjärvi, Tihomir Iakimov et al. · Journal of Crystal Growth | Aug 2000 | 72 |
| 11 | Simulation of large-scale silicon melt flow in magnetic Czochralski growth V. Savolainen, J. Heikonen, Juha Ruokolainen et al. · Journal of Crystal Growth | Aug 2002 | 64 |
| 12 | SiC Crystal Growth by HTCVD Alexsandre Ellison, Björn Magnusson, Björn Sundqvist et al. · Materials science forum | 15 Jun 2004 | 62 |
| 13 | Defects in High-Purity Semi-Insulating SiC Nguyên Tiên Són, Björn Magnusson, Z. Zolnai et al. · Materials science forum | 15 Jun 2004 | 62 |
| 14 | Experimental and theoretical study of heterogeneous iron precipitation in silicon Antti Haarahiltunen, Hele Väinölä, Olli Anttila et al. · Journal of Applied Physics | 15 Feb 2007 | 58 |
| 15 | Machine Learning‐Based and Experimentally Validated Optimal Adhesive Fibril Designs Donghoon Son, Ville Liimatainen, Metin Sitti · Small | 19 Aug 2021 | 55 |
| 16 | Processing of microstrip detectors on Czochralski grown high resistivity silicon substrates J. Härkönen, E. Tuominen, E. Tuovinen et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment | 16 Sep 2003 | 53 |
| 17 | Rotational grinding of silicon wafers—sub-surface damage inspection Antti Haapalinna, Saulius Nevas, Dietmar Pähler · Materials Science and Engineering B | Mar 2004 | 46 |
| 18 | Defects in Semi-Insulating SiC Substrates Nguyên Tiên Són, Björn Magnusson, Z. Zolnai et al. · Materials science forum | 15 Sep 2003 | 33 |
| 19 | Effect of Chemicals on Metal Contamination on Silicon Wafers Olli Anttila, Markku Tilli, Marc Schaekers et al. · Journal of The Electrochemical Society | Apr 1992 | 32 |
| 20 | MEMS on cavity-SOI wafers Hannu Luoto, Kimmo Henttinen, Tommi Suni et al. · Solid-State Electronics | Feb 2007 | 32 |
| 21 | Metal Contamination Removal on Silicon Wafers using Dilute Acidic Solutions Olli Anttila, Markku Tilli · Journal of The Electrochemical Society | Jun 1992 | 26 |
| 22 | Seeded sublimation growth of 6H and 4H–SiC crystals Rositza Yakimova, Mikael Syväjärvi, M. Tuominen et al. · Materials Science and Engineering B | Jul 1999 | 23 |
| 23 | Spectral Characteristics of Narrow-Linewidth High-Power 1180 nm DBR Laser With Surface Gratings Heikki T. Virtanen, Antti T. Aho, Jukka Viheriälä et al. · IEEE Photonics Technology Letters | 16 Nov 2016 | 22 |
| 24 | Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOI Xiangdong Li, Ming Zhao, Benoit Bakeroot et al. · IEEE Transactions on Electron Devices | 12 Nov 2018 | 21 |
| 25 | Growth-related structural defects in seeded sublimation-grown SiC M. Tuominen, Rositsa Yakimova, E. Prieur et al. · Diamond and Related Materials | Aug 1997 | 20 |
| 26 | Defect origin and development in sublimation grown SiC boules M. Tuominen, Rositsa Yakimova, Asko Vehanen et al. · Materials Science and Engineering B | 1999 | 20 |
| 27 | Modeling of heterogeneous precipitation of iron in silicon A. Haarahiltunen, Hele Väinölä, Olli Anttila et al. · Applied Physics Letters | 5 Oct 2005 | 19 |
| 28 | Silicon Wafers Markku Tilli · Elsevier eBooks | 2015 | 18 |
| 29 | Wafer warpage, crystal bending and interface properties of 4H-SiC epi-wafers A. Ellison, Homayon H. Radamson, M. Tuominen et al. · Diamond and Related Materials | Aug 1997 | 17 |
| 30 | Cold ion-cutting of hydrogen implanted Si Kimmo Henttinen, Tommi Suni, Arto Nurmela et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms | May 2002 | 17 |
| 31 | Properties of silicon Markku Tilli, Antti Haapalinna · Elsevier eBooks | 2020 | 16 |
| 32 | Polarization Responses of a Solitary and Optically Injected Vertical Cavity Spin Laser B. R. Cemlyn, Ian D. Henning, M.J. Adams et al. · IEEE Journal of Quantum Electronics | 10 Sep 2019 | 15 |
| 33 | Via Technologies for MEMS Pradeep Dixit, Kimmo Henttinen · Elsevier eBooks | 2015 | 15 |
| 34 | Gettering of iron in silicon by boron implantation Antti Haarahiltunen, Heli Talvitie, Hele I. Savin et al. · Journal of Materials Science Materials in Electronics | 22 Feb 2008 | 15 |
| 35 | Silicon-on-Insulator Wafers with Buried Cavities Tommi Suni, Kimmo Henttinen, James R. Dekker et al. · Journal of The Electrochemical Society | 2006 | 14 |
| 36 | MOVPE growth of GaN on patterned 6-inch Si wafer Iurii Kim, Joonas Holmi, Ramesh Raju et al. · Journal of Physics Communications | Apr 2020 | 13 |
| 37 | Silicon wafers preparation and properties Markku Tilli · Elsevier eBooks | 2020 | 13 |
| 38 | Chapter 4 – Silicon Wafers: Preparation and Properties Markku Tilli | 2015 | 12 |
| 39 | Dopant-induced stress in microfabricated silicon devices Päivi Sievilä, Jari Mäkinen, Markku Tilli et al. · Journal of Applied Physics | 25 Jul 2013 | 12 |
| 40 | Strain engineering of AlGaN‐GaN HFETs grown on 3 inch 4H‐SiC Frank Brunner, O. Reentilä, Joachim Würfl et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics | 13 Feb 2009 | 11 |
| 41 | Cavity-BOX SOI: Advanced Silicon Substrate with Pre-Patterned BOX for Monolithic MEMS Fabrication Marta Kluba, Jian Li, Katja Parkkinen et al. · Micromachines | 8 Apr 2021 | 10 |
| 42 | MOVPE growth of GaN on 6-inch SOI-substrates: effect of substrate parameters on layer quality and strain Jori Lemettinen, Christoffer Kauppinen, Marius Rudzinski et al. · Semiconductor Science and Technology | 13 Jan 2017 | 10 |
| 43 | Synchrotron Section Topographic Study of Czochralski‐Grown Silicon Wafers for Advanced Memory Circuits T. Tuomi, M. Tuominen, E. Prieur et al. · Journal of The Electrochemical Society | May 1995 | 10 |
| 44 | High-Power 1180-nm GaInNAs DBR Laser Diodes Antti T. Aho, Jukka Viheriälä, Ville‐Markus Korpijärvi et al. · IEEE Photonics Technology Letters | 6 Oct 2017 | 9 |
| 45 | Modeling and Optimization of Internal Gettering of Iron in Silicon Antti Haarahiltunen, Hele Väinölä, Marko Yli‐Koski et al. · ECS Transactions | 20 Oct 2006 | 9 |
| 46 | Bonding of ALD Alumina for Advanced SOI Substrates Tommi Suni, Riikka L. Puurunen, Oili M. E. Ylivaara et al. · ECS Transactions | Oct 2010 | 9 |
| 47 | In-situ annealing characterization of atomic-layer-deposited Al2O3 in N2, H2 and vacuum atmospheres Mikael Broas, Jori Lemettinen, Timo Sajavaara et al. · Thin Solid Films | 12 Mar 2019 | 8 |
| 48 | Synchrotron x-Ray Topographic Study Of Dislocations In Gaas Detector Crystals Grown By Vertical Gradient Freeze Technique T. Tuomi, Minna Juvonen, R. Rantamäki et al. · MRS Proceedings | 1997 | 8 |
| 49 | Modeling the impact of defects on the charge collection efficiency of a Cadmium Telluride detector Maria Golovleva, M. Bezak, S. Bharthuar et al. · Journal of Instrumentation | Aug 2021 | 7 |
| 50 | A Novel CMP Process on Fixed Abrasive Pads for the Manufacturing of Highly Planar Thick Film SOI Substrates Martin Kulawski, Kimmo Henttinen, Ilkka Suni et al. · MRS Proceedings | 2003 | 7 |
Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.