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Institution · Plasma Processes (United States)

Most cited papers from Plasma Processes (United States)

Plasma Processes (United States)

What are the most cited papers from Plasma Processes (United States)?

The most cited paper from Plasma Processes (United States) is "High-efficiency humidity-stable planar perovskite solar cells based on atomic layer architecture" (Dibyashree Koushik, Wiljan J. H. Verhees, Yinghuan Kuang et al., 2016), with 282 citations. Next come "Synthesis and characterization of plasma spray formed carbon nanotube reinforced aluminum composite" (249) and "Inductively coupled plasma etching of GaN" (216).

Showing 50 of 59 papers. Every paper with more than 19 citations is listed.

Most cited papers, sortable by citations and release date
#Paper
1 High-efficiency humidity-stable planar perovskite solar cells based on atomic layer architecture Dibyashree Koushik, Wiljan J. H. Verhees, Yinghuan Kuang et al. · Energy & Environmental Science Open access 21 Nov 2016 282
2 Synthesis and characterization of plasma spray formed carbon nanotube reinforced aluminum composite Tapas Laha, Arvind K. Agarwal, Tim McKechnie et al. · Materials Science and Engineering A Open access 30 Jul 2004 249
3 Inductively coupled plasma etching of GaN RANDY J. SHUL, G McClellan, Stephen A. Casalnuovo et al. · Applied Physics Letters 19 Aug 1996 216
4 Synthesis and applications of carbon nanomaterials for energy generation and storage Marco Notarianni, Jinzhang Liu, K. C. Vernon et al. · Beilstein Journal of Nanotechnology Open access Feb 2016 163
5 JSC-1A lunar soil simulant: Characterization, glass formation, and selected glass properties Chandra S. Ray, Signo Tadeu dos Reis, Sujat Sen et al. · Journal of Non-Crystalline Solids 10 Jun 2010 152
6 High-density plasma etching of compound semiconductors RANDY J. SHUL, G McClellan, Ronald D. Briggs et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films May 1997 123
7 The evolution of atmospheric-pressure low-temperature plasma jets: jet current measurements Erdinç Karakaş, Mehmet Arda Akman, Mounir Laroussi · Plasma Sources Science and Technology 18 May 2012 115
8 Plasma etching of III–V semiconductors in CH4/H2/Ar electron cyclotron resonance discharges Chris Constantine, Derek Campbell Johnson, S. J. Pearton et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena Jul 1990 111
9 Negative ion destruction by O(3P) atoms and O2(a 1Δg) molecules in an oxygen plasma S.G. Belostotsky, Demetre J. Economou, D. V. Lopaev et al. · Plasma Sources Science and Technology 9 Jun 2005 91
10 Oxygen diffusion into SiO2-capped GaN during annealing S. J. Pearton, Hayeong Cho, Jeffery R. LaRoche et al. · Applied Physics Letters 8 Nov 1999 82
11 Synthesis, Microstructural Characterization, and Mechanical Property Evaluation of Vacuum Plasma Sprayed Tantalum Carbide Kantesh Balani, G H Andres Gonzalez, Arvind K. Agarwal et al. · Journal of the American Ceramic Society Open access Feb 2006 79
12 Forecasting Solar Cycle 25 Using Deep Neural Networks B. Benson, W. D. Pan, A. Prasad et al. · Solar Physics Open access May 2020 76
13 Annealing of dry etch damage in metallized and bare (-201) Ga2O3 Jiancheng Yang, Fan Ren, Rohit Khanna et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Open access 25 Jul 2017 74
14 Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes Jiancheng Yang, Shihyun Ahn, Fan Ren et al. · Applied Physics Letters 3 Apr 2017 71
15 Room temperature gas sensing properties of ultrathin carbon nanotube films by surfactant-free dip coating Carlo Piloto, Francesca Mirri, Elie Amram Bengio et al. · Sensors and Actuators B Chemical Open access 18 Dec 2015 68
16 Low Temperature Silicon Nitride and Silicon Dioxide Film Processing by Inductively Coupled Plasma Chemical Vapor Deposition J. W. Lee, Kenneth D. Mackenzie, D. J. Johnson et al. · Journal of The Electrochemical Society Open access 2000 64
17 The Science and Technologies for Fusion Energy With Lasers and Direct-Drive Targets J. D. Sethian et al. · IEEE Transactions on Plasma Science 20 Jan 2010 63
18 Comparison of dry etch techniques for GaN RANDY J. SHUL, G McClellan, S. J. Pearton et al. · Electronics Letters 18 Jul 1996 62
19 Electron cyclotron resonance plasma etching of InP in CH4/H2/Ar S. J. Pearton, U. K. Chakrabarti, A. P. Kinsella et al. · Applied Physics Letters 9 Apr 1990 62
20 Net Shape Nanostructured Aluminum Oxide Structures Fabricated by Plasma Spray Forming Arvind K. Agarwal, Tim McKechnie, Sudipta Seal · Journal of Thermal Spray Technology Open access Sep 2003 60
21 A Segmented‐Target Sputtering Process for Growth of Sub‐50 nm Ferroelectric Scandium–Aluminum–Nitride Films with Composition and Stress Tuning Sushant Rassay, Faysal Hakim, Chao Li et al. · physica status solidi (RRL) - Rapid Research Letters 12 Apr 2021 58
22 Inductively coupled plasma etching of III–V semiconductors in BCl3-based chemistries Tatsuro Maeda, J.W Lee, RANDY J. SHUL et al. · Applied Surface Science Apr 1999 51
23 Synthesis of bulk nanostructured aluminum alloy component through vacuum plasma spray technique Tapas Laha, Arvind K. Agarwal, Tim McKechnie et al. · Acta Materialia Open access 28 Oct 2005 51
24 Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas J. W. Lee, M. W. Devre, B. H. Reelfs et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Jul 2000 51
25 Inductively coupled plasma etching of bulk, single-crystal Ga2O3 Jiancheng Yang, Shihyun Ahn, Fan Ren et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena May 2017 48
26 Smooth, low-bias plasma etching of InP in microwave Cl2/CH4/H2 mixtures Chris Constantine, C. Barratt, S. J. Pearton et al. · Applied Physics Letters 14 Dec 1992 47
27 Copper Dry Etching with Cl2 / Ar Plasma Chemistry J. W. Lee, Y. D. Park, Jeffrey R. Childress et al. · Journal of The Electrochemical Society Jul 1998 41
28 Intrinsically Switchable Ferroelectric Scandium Aluminum Nitride Lamb-Mode Resonators Sushant Rassay, Dicheng Mo, Chao Li et al. · IEEE Electron Device Letters 10 May 2021 40
29 Relative merits of Cl2 and CO/NH3 plasma chemistries for dry etching of magnetic random access memory device elements K. B. Jung, Hayeong Cho, Yoon‐Bong Hahn et al. · Journal of Applied Physics 15 Apr 1999 39
30 Oxidation-Protective Iridium and Iridium-Rhodium Coating Produced by Electrodeposition from Molten Salts Alexander Etenko, Tim McKechnie, Anatoliy Shchetkovskiy et al. · ECS Transactions Conference paper 6 Jul 2007 38
31 Variations in Tantalum Carbide Microstructures with Changing Carbon Content Robert A. Morris, Billie Wang, Daniel A. Butts et al. · International Journal of Applied Ceramic Technology 8 Mar 2012 38
32 Exploring few-layer graphene and graphene oxide as fillers to enhance the oxygen-atom corrosion resistance of composites Min Su Yi, Zhigang Shen, Xiao-Hu Zhao et al. · Physical Chemistry Chemical Physics 2014 36
33 Comparison of CH4/H2/Ar reactive ion etching and electron cyclotron resonance plasma etching of In-based III–V alloys S. J. Pearton, U. K. Chakrabarti, Avishay Katz et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena May 1991 33
34 Comparison of inductively coupled plasma Cl2 and Cl4/H2 etching of III-nitrides Hyun Min Cho, C. B. Vartuli, S. M. Donovan et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films May 1998 33
35 Microwave CI 2 /H 2 discharges for high rate etching of InP Chris Constantine, C. Barratt, S. J. Pearton et al. · Electronics Letters 27 Aug 1992 33
36 Chlorine-Based Plasma Etching of GaN RANDY J. SHUL, Ronald D. Briggs, S. J. Pearton et al. · MRS Proceedings 1996 32
37 Low-pressure, low-temperature, and remote-plasma deposition of diamond thin films from water-methanol mixtures R. K. Singh, Donald R. Gilbert, R. Tellshow et al. · Applied Physics Letters 14 Dec 1992 29
38 Structure and property evaluation of a vacuum plasma sprayed nanostructured tungsten–hafnium carbide bulk composite Keith E. Rea, V. Viswanathan, Arnold Kruize et al. · Materials Science and Engineering A Open access 25 May 2007 27
39 How to Ignite an Atmospheric Pressure Microwave Plasma Torch without Any Additional Igniters Martina Leins, Sandra Gaiser, Andreas Schulz et al. · Journal of Visualized Experiments Open access 16 Apr 2015 26
40 A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors Mohsin Ahmed, Mohamad K. Khawaja, Marco Notarianni et al. · Nanotechnology Open access 8 Oct 2015 25
41 Anisotropic electron cyclotron resonance etchingof GaInP/AlGaInP heterostructures RANDY J. SHUL, R.P. Schneider, Chris Constantine · Electronics Letters 12 May 1994 25
42 Electron Beam Melting of Niobium Alloys from Blended Powders Jameson P. Hankwitz, Christopher Ledford, Christopher Rock et al. · Materials Open access 24 Sep 2021 24
43 Influence of hafnium carbide on vacuum plasma spray processed tantalum carbide microstructures Bradford C. Schulz, Billie Wang, Robert A. Morris et al. · Journal of the European Ceramic Society 17 Dec 2012 24
44 Reactive ion beam etching of GaAs and related compounds in an inductively coupled plasma of Cl2–Ar mixture Yoon‐Bong Hahn, J. W. Lee, Gregory A. Vawter et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Open access Mar 1999 24
45 CH4/H2/Ar/Cl2 electron cyclotron resonance plasma etching of via holes for InP-based microwave devices Rohit Sanjay Khare, J.J. Brown, Meng Hu et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Sep 1994 24
46 A Top-Down Fabrication Process for Vertical Hollow Silicon Nanopillars Yuan He, Xiangchen Che, Long Que · Journal of Microelectromechanical Systems 30 Jun 2016 22
47 Etching of Ga-based III - V semiconductors in inductively coupled Ar and -based plasma chemistries Jun-Hyeop Lee, C. R. Abernathy, S. J. Pearton et al. · Plasma Sources Science and Technology Nov 1997 22
48 Dry etch damage in inductively coupled plasma exposed GaAs/AlGaAs heterojunction bipolar transistors Fan Ren, J. W. Lee, C. R. Abernathy et al. · Applied Physics Letters 5 May 1997 22
49 Comparison of F 2‐Based Gases for High‐Rate Dry Etching of Si David C. Hays, K. B. Jung, Yoon‐Bong Hahn et al. · Journal of The Electrochemical Society Open access Oct 1999 22
50 Inductively Coupled Plasma Etching of III‐V Nitrides in CH 4 / H 2 / Ar and CH 4 / H 2 / N 2 Chemistries C. B. Vartuli, S. J. Pearton, J. W. Lee et al. · Journal of The Electrochemical Society Open access Aug 1997 21

Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.