Most cited papers from SunEdison (Italy)

SunEdison (Italy)

What are the most cited papers from SunEdison (Italy)?

The most cited paper from SunEdison (Italy) is "On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing" (Robert J. Falster, Vladimir V. Voronkov, F. Quast, 2000), with 212 citations. Next come "Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments" (159) and "Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon" (156).

Published TypeFieldAccessCitations

Showing 50 of 61 papers. Every paper with more than 19 citations is listed.

Most cited papers, sortable by citations and release date
#	Paper
1	On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing Robert J. Falster, Vladimir V. Voronkov, F. Quast · physica status solidi (b)	Nov 2000	212
2	Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments Mohan Vadakkedam Jacob, P. Pichler, H. Ryssel et al. · Journal of Applied Physics Open access	Jul 1997	159
3	Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon Vladimir V. Voronkov, Robert J. Falster · Journal of Crystal Growth	Aug 1999	156
4	Latent complexes of interstitial boron and oxygen dimers as a reason for degradation of silicon-based solar cells Vladimir V. Voronkov, Robert J. Falster · Journal of Applied Physics	Mar 2010	139
5	Vacancy and self-interstitial concentration incorporated into growing silicon crystals Vladimir V. Voronkov, Robert J. Falster · Journal of Applied Physics	Dec 1999	128
6	Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon John D. Murphy, Karsten Bothe, Rafael Krain et al. · Journal of Applied Physics	Jun 2012	125
7	The engineering of intrinsic point defects in silicon wafers and crystals Robert J. Falster, Vladimir V. Voronkov · Materials Science and Engineering B	Apr 2000	111
8	Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation John D. Murphy, R. E. McGuire, Karsten Bothe et al. · Solar Energy Materials and Solar Cells Open access	15 Jul 2013	90
9	The effect of oxide precipitates on minority carrier lifetime in p-type silicon John D. Murphy, Karsten Bothe, M. Olmo et al. · Journal of Applied Physics	Sep 2011	85
10	The effect of oxide precipitates on minority carrier lifetime in n -type silicon John D. Murphy, Mohammad Al-Amin, Karsten Bothe et al. · Journal of Applied Physics Open access	7 Dec 2015	78
11	Oxygen precipitation in silicon: Experimental studies and theoretical investigations within the classical theory of nucleation K. F. Kelton, Robert J. Falster, D. Gambaro et al. · Journal of Applied Physics	15 Jun 1999	76
12	Formation, dissociation, and diffusion of various hydrogen dimers in silicon Vladimir V. Voronkov, Robert J. Falster · physica status solidi (b)	10 Feb 2017	71
13	Lifetime-degrading boron-oxygen centres in p-type and n-type compensated silicon Vladimir V. Voronkov, Robert J. Falster, Karsten Bothe et al. · Journal of Applied Physics	15 Sep 2011	67
14	Effect of rapid thermal annealing on recombination centres in boron-doped Czochralski-grown silicon Dominic Walter, Bianca Lim, Karsten Bothe et al. · Applied Physics Letters	27 Jan 2014	64
15	Oxygen-dislocation interactions in silicon at temperatures below 700 °C: Dislocation locking and oxygen diffusion Semih Senkader, Peter R. Wilshaw, Robert J. Falster · Journal of Applied Physics	May 2001	62
16	The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon S. Pizzini, M. Guzzi, E. Grilli et al. · Journal of Physics Condensed Matter Open access	21 Nov 2000	59
17	Gettering thresholds for transition metals by oxygen-related defects in silicon Robert J. Falster, Graham R. Fisher, Giuliana Ferrero · Applied Physics Letters	12 Aug 1991	58
18	Nucleation of oxide precipitates in vacancy-containing silicon Vladimir V. Voronkov, Robert J. Falster · Journal of Applied Physics	May 2002	55
19	Grown-in defects in silicon produced by agglomeration of vacancies and self-interstitials Vladimir V. Voronkov · Journal of Crystal Growth	26 Nov 2007	55
20	Computer modelling of heat transfer in Czochralski silicon crystal growth Andrea Virzi · Journal of Crystal Growth	Jul 1991	52
21	Capillary viscometry of molten polycaprolactam Giovanni Pezzin, G.B. Gechele · Journal of Applied Polymer Science	Sep 1964	49
22	Quantification of Defect Dynamics in Unsteady-State and Steady-State Czochralski Growth of Monocrystalline Silicon Milind S. Kulkarni, Vladimir V. Voronkov, Robert J. Falster · Journal of The Electrochemical Society Open access	2004	48
23	Shallow thermal donors in nitrogen-doped silicon Vladimir V. Voronkov, Maria Porrini, P Collareta et al. · Journal of Applied Physics	15 Apr 2001	48
24	Spatial variations in oxygen precipitation in silicon after high temperature rapid thermal annealing Marco Pagani, Robert J. Falster, Graham R. Fisher et al. · Applied Physics Letters	24 Mar 1997	48
25	The Engineering of Silicon Wafer Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behavior Robert J. Falster, D. Gambaro, M. Olmo et al. · MRS Proceedings	1998	45
26	Contamination of silicon by iron at temperatures below 800 °C John D. Murphy, Robert J. Falster · physica status solidi (RRL) - Rapid Research Letters	6 Sep 2011	44
27	Application of non-normal process capability indices to semiconductor quality control S. Bittanti, Marco Lovera, L. Moiraghi · IEEE Transactions on Semiconductor Manufacturing	May 1998	43
28	On the locking of dislocations by oxygen in silicon Semih Senkader, Kerstin Jurkschat, D. Gambaro et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties	Mar 2001	40
29	Room temperature sub-bandgap photoluminescence from silicon containing oxide precipitates Karsten Bothe, Robert J. Falster, John D. Murphy · Applied Physics Letters	16 Jul 2012	39
30	Infrared response of oxygen precipitates in silicon: Experimental and simulated spectra A. Sassella, Alessandro Borghesi, P. Geranzani et al. · Applied Physics Letters	23 Aug 1999	37
31	Onset of slip in silicon containing oxide precipitates Kerstin Jurkschat, Semih Senkader, Peter R. Wilshaw et al. · Journal of Applied Physics	Oct 2001	37
32	Dopant effect on point defect incorporation into growing silicon crystal Vladimir V. Voronkov, Robert J. Falster · Journal of Applied Physics	May 2000	36
33	On the mechanism of recombination at oxide precipitates in silicon John D. Murphy, Karsten Bothe, Vladimir V. Voronkov et al. · Applied Physics Letters Open access	28 Jan 2013	36
34	Properties of vacancies and self-interstitials in silicon deduced from crystal growth, wafer processing, self-diffusion and metal diffusion Vladimir V. Voronkov, Robert J. Falster · Materials Science and Engineering B	Oct 2006	35
35	The effect of nitrogen on void formation in Czochralski silicon crystals Vladimir V. Voronkov, Robert J. Falster · Journal of Crystal Growth	15 Dec 2004	35
36	Determination of the bulk lifetime of bare multicrystalline silicon wafers Karsten Bothe, Rafael Krain, Robert J. Falster et al. · Progress in Photovoltaics Research and Applications Open access	11 Mar 2010	33
37	Strain-induced transformation of amorphous spherical precipitates into platelets: Application to oxide particles in silicon Vladimir V. Voronkov, Robert J. Falster · Journal of Applied Physics	Jun 2001	33
38	The relaxation behaviour of supersaturated iron in single-crystal silicon at 500 to 750 °C John D. Murphy, Robert J. Falster · Journal of Applied Physics	Dec 2012	32
39	Effect of vacancies on nucleation of oxide precipitates in silicon Vladimir V. Voronkov, Robert J. Falster · Materials Science in Semiconductor Processing	Aug 2002	32
40	Melting temperatures and polymer–solvent interaction for polycaprolactam G.B. Gechele, Lucia De Crescentini · Journal of Applied Polymer Science	Jul 1963	31
41	The conversion of isolated oxygen atoms to a fast diffusing species in Czochralski silicon at low temperatures S.A. McQuaid, Bayard K. Johnson, D. Gambaro et al. · Journal of Applied Physics	15 Aug 1999	31
42	Lifetimes exceeding 1ms in 1-Ωcm boron-doped Cz-silicon Dominic Walter, Bianca Lim, Karsten Bothe et al. · Solar Energy Materials and Solar Cells	2 Jul 2014	31
43	Coupled-flux nucleation modeling of oxygen precipitation in silicon Pengfei Wei, K. F. Kelton, Robert J. Falster · Journal of Applied Physics	Nov 2000	31
44	Nitrogen diffusion and interaction with dislocations in single-crystal silicon Charles R. Alpass, John D. Murphy, Robert J. Falster et al. · Journal of Applied Physics	2009	30
45	Atomic force microscopy: a powerful tool for surface defect and morphology inspection in semiconductor industry Gabriella Borionetti, A. Bazzali, R. Orizio · The European Physical Journal Applied Physics	Jul 2004	30
46	Oxygen and Nitrogen Transport in Silicon Investigated by Dislocation Locking Experiments A. Giannattasio, John D. Murphy, Semih Senkader et al. · Journal of The Electrochemical Society	2005	28
47	Monitoring the calibration status of a measuring instrument by a stochastic model Andrea Bobbio, Patrizia Tavella, Alberto Montefusco et al. · IEEE Transactions on Instrumentation and Measurement	1997	28
48	The nature of boron‐oxygen lifetime‐degrading centres in silicon Vladimir V. Voronkov, Robert J. Falster · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics	13 May 2016	27
49	Competitive gettering of iron in silicon photovoltaics: Oxide precipitates versus phosphorus diffusion John D. Murphy, R. E. McGuire, Karsten Bothe et al. · Journal of Applied Physics Open access	4 Aug 2014	27
50	Formation of voids and oxide particles in silicon crystals Vladimir V. Voronkov · Materials Science and Engineering B	Apr 2000	26

Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.