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Most cited papers from Symetrix (United States)

What are the most cited papers from Symetrix (United States)?

The most cited paper from Symetrix (United States) is "Fatigue-free ferroelectric capacitors with platinum electrodes" (C. A-Paz de Araujo, Joe D. Cuchiaro, L. D. McMillan et al., 1995), with 2,629 citations. Next come "Quantitative measurement of space-charge effects in lead zirconate-titanate memories" (517) and "Switching kinetics of lead zirconate titanate submicron thin-film memories" (456).

Showing 50 of 59 papers. Every paper with more than 11 citations is listed.

Most cited papers, sortable by citations and release date
#Paper
1 Fatigue-free ferroelectric capacitors with platinum electrodes C. A-Paz de Araujo, Joe D. Cuchiaro, L. D. McMillan et al. · Nature Apr 1995 2,629
2 Quantitative measurement of space-charge effects in lead zirconate-titanate memories James Floyd Scott, Carlos A. Paz de Araújo, B. M. Melnick et al. · Journal of Applied Physics Jul 1991 517
3 Switching kinetics of lead zirconate titanate submicron thin-film memories James Floyd Scott, L. Kammerdiner, Michael D. Parris et al. · Journal of Applied Physics 15 Jul 1988 456
4 Fatigue and switching in ferroelectric memories: Theory and experiment H. M. Duiker, Paul D. Beale, James Floyd Scott et al. · Journal of Applied Physics Dec 1990 451
5 Ferroelectric memories Carlos A. Paz de Araújo, L. D. McMillan, B. M. Melnick et al. · Ferroelectrics Apr 1990 249
6 Radiation effects on ferroelectric thin-film memories: Retention failure mechanisms James Floyd Scott, Carlos A. Paz de Araújo, H. Brett Meadows et al. · Journal of Applied Physics Aug 1989 230
7 Preparation of Ferroelectric Thin Films of Bismuth Layer Structured Compounds Hitoshi Watanabe, Takashi Mihara, Hiroyuki Yoshimori et al. · Japanese Journal of Applied Physics Sep 1995 230
8 Characteristics of Bismuth Layered SrBi2Ta2O9 Thin-Film Capacitors and Comparison with Pb(Zr, Ti)O3 Takashi Mihara, Hiroyuki Yoshimori, Hitoshi Watanabe et al. · Japanese Journal of Applied Physics Open access Sep 1995 188
9 Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films C. S. Ganpule, Andrei V. Stanishevsky, S. Aggarwal et al. · Applied Physics Letters 13 Dec 1999 113
10 Dielectric breakdown in high-ε films for ULSI DRAMs: II. barium-strontium titanate ceramics James Floyd Scott, Masamichi AZUMA, Carlos A. Paz de Araújo et al. · Integrated ferroelectrics Feb 1994 102
11 Raman spectroscopy of submicron KNO3 films. II. Fatigue and space-charge effects James Floyd Scott, B. Pouligny · Journal of Applied Physics Aug 1988 66
12 Effects of scaling the film thickness on the ferroelectric properties of SrBi2Ta2O9 ultra thin films Jolanta Celinska, Vikram Chandrashekhar Joshi, S. P. Atul Narayan et al. · Applied Physics Letters 29 May 2003 61
13 Negative differential resistivity in ferroelectric thin-film current-voltage relationships James Floyd Scott, B. M. Melnick, Joe D. Cuchiaro et al. · Integrated ferroelectrics Feb 1994 60
14 Liquid source misted chemical deposition (LSMCD)–a critical review Maria Huffman · Integrated ferroelectrics Oct 1995 57
15 Voltage tunable capacitors using high temperature superconductors and ferroelectrics Huey-Daw Wu, Zhihang Zhang, F.S. Barnes et al. · IEEE Transactions on Applied Superconductivity 1994 56
16 Process dependent electrical characteristics and equivalent circuit model of sol-gel based PZT capacitors Takashi Mihara, Hitoshi Watanabe, Hiroyuki Yoshimori et al. · Integrated ferroelectrics Jul 1992 56
17 Compositional dependence of electrical characteristics of SrBi2(Ta1−xNbx)2O9 thin-film capacitors Akira Furuya, Joe D. Cuchiaro · Journal of Applied Physics 15 Dec 1998 56
18 Recent results on switching, fatigue and electrical characterization of sol-gel based PZT capacitors B. M. Melnick, Carlos A. Paz de Araújo, L. D. McMillan et al. · Ferroelectrics Apr 1991 55
19 Thickness dependence of D.C. leakage current in lead zirconate-titanate (PZT) memories B. M. Melnick, James Floyd Scott, Carlos A. Paz de Araújo et al. · Ferroelectrics Oct 1992 51
20 A 256 kb nonvolatile ferroelectric memory at 3 V and 100 ns Tomonari Sumi, Norihiko Moriwaki, G. Nakane et al. Conference paper 17 Dec 2002 49
21 Dielectric breakdown in high-ε films for ULSI DRAMs J. F. Scott, B. M. Melnick, L. D. McMillan et al. · Integrated ferroelectrics Oct 1993 48
22 A model of voltage-dependent dielectric losses for ferroelectric MMIC devices J. F. Scott, David Galt, John C. Price et al. · Integrated ferroelectrics 1995 46
23 TdI10: Ferroelectric thin films in integrated microelectronic devices J. F. Scot, Carlos A. Paz de Araújo, L. D. McMillan et al. · Ferroelectrics Aug 1992 45
24 Oxide superconductors and ferroelectrics?Materials for a new generation of tunable microwave devices A. M. Hermann, R. M. Yandrofski, James Floyd Scott et al. · Journal of Superconductivity Apr 1994 40
25 Process optimization and characterization of device worthy sol-gel based PZT for ferroelectric memories B. M. Melnick, Joe D. Cuchiaro, L. D. Mcmillian et al. · Ferroelectrics Dec 1990 40
26 Graded PZT thin film capacitors with stoichimetric variation by MOD technique Zheng Chen, Koji Arita, Myoungho Lim et al. · Integrated ferroelectrics Aug 1999 35
27 256Kb Ferroelectric nonvolatile memory technology for 1T/1C cell with 100ns read/write time at 3V Tatsumi Sumi, Nobuyuki Moriwaki, G. Nakane et al. · Integrated ferroelectrics 1995 32
28 Influence of Ti-content in the bottom electrodes on the ferroelectric properties of SrBi2Ta2O9(SBT) G. Schindler, Walter Hartner, Vikram Chandrashekhar Joshi et al. · Integrated ferroelectrics Sep 1997 28
29 Low temperature process for strontium bismuth tantalate thin films Jolanta Celinska, Vikram Chandrashekhar Joshi, S. P. Atul Narayan et al. · Integrated ferroelectrics Oct 2000 28
30 Integration technology of ferroelectrics and the performance of the integrated ferroelectrics Yoshifumi Shimada, Y. Nagano, Eiji Fujii et al. · Integrated ferroelectrics Nov 1995 27
31 A non-filamentary model for unipolar switching transition metal oxide resistance random access memories Kan‐Hao Xue, Carlos A. Paz de Araújo, Jolanta Celinska et al. · Journal of Applied Physics May 2011 27
32 Characterization of an N-channel 1T-1C nonvolatile memory cell using ferroelectric SrBi2Ta2O9 as the capacitor dielectric B. M. Melnick, J. Walter Gregory, Carlos A. Paz de Araújo · Integrated ferroelectrics Nov 1995 26
33 D.C. leakage currents in ferroelectric memories James Floyd Scott, B. M. Melnick, Carlos A. Paz de Araújo et al. · Integrated ferroelectrics Jul 1992 25
34 Depolarization Characteristics in Sol-Gel Ferroelectric Pb(Zr0.4Ti0.6)O3 Thin-Film Capacitors Takashi Mihara, Hiroyuki Yoshimori, Hitoshi Watanabe et al. · Japanese Journal of Applied Physics May 1995 24
35 Deposition of Ba1−xSrxTiO3 and SrTiO3 via liquid source CVD (LSCVD) for ULSI DRAMS L. D. McMillan, Maria Huffman, Trevor L. Roberts et al. · Integrated ferroelectrics Jun 1994 24
36 Ferroelectric memories: A comparison with other high-speed digital devices James Floyd Scott, L. D. McMillan, Carlos A. Paz de Araújo · Ferroelectrics Apr 1991 22
37 Radiation damage in ferroelectric thin-film memories James Floyd Scott, Carlos A. Paz de Araújo, L. D. McMillan · Ferroelectrics Apr 1991 22
38 A comparative study on Bi4Ti3O12 and Bi3.25La0.75Ti3O12 ferroelectric thin films derived by metal organic decomposition Kan‐Hao Xue, Carlos A. Paz de Araújo, Jolanta Celinska · Journal of Applied Physics 15 May 2010 22
39 Second generation liquid source misted chemical deposition (LSMCD) technology for ferroelectric thin films Narayan Solayappan, L. D. McMillan, Carlos A. Paz de Araújo et al. · Integrated ferroelectrics Sep 1997 21
40 Characterization of self-patterned SrBi2Ta2O9 thin films from photo-sensitive solutions Hiroto Uchida, Nobuyuki Soyama, Keisuke Kageyama et al. · Integrated ferroelectrics Apr 1997 20
41 Device characterization of correlated electron random access memories Christopher R. McWilliams, Jolanta Celinska, Carlos A. Paz de Araújo et al. · Journal of Applied Physics May 2011 19
42 Analysis of C-V and I-V data of BST thin films Vikram Chandrashekhar Joshi, C. P. Dacruz, Joe D. Cuchiaro et al. · Integrated ferroelectrics 1997 19
43 Low temperature preparation of ferroelectric bismuth titanate thin films Kan‐Hao Xue, Jolanta Celinska, Carlos A. Paz de Araújo · Applied Physics Letters 3 Aug 2009 19
44 Material and process optimization of correlated electron random access memories Jolanta Celinska, Christopher McWilliams, Carlos A. Paz de Araújo et al. · Journal of Applied Physics May 2011 18
45 A 0.9 V embedded ferroelectric memory for microcontrollers Tomonari Sumi, Masamichi AZUMA, T. Otsuki et al. Conference paper 19 Nov 2002 18
46 Evaluating IT investments. Carolyn B. Griswold · PubMed Dec 1998 17
47 Single event upset immunity of strontium bismuth tantalate ferroelectric memories Joseph M. Benedetto, Gary F. Derbenwick, Joe D. Cuchiaro · IEEE Transactions on Nuclear Science Dec 1999 17
48 Conformal LSMCD deposition of SrBi2(Ta1-xNbx)2O9 Narayan Solayappan, Gary F. Derbenwick, L. D. McMillan et al. · Integrated ferroelectrics 1997 16
49 Review of the Science and Technology for Low- and High-Density Nonvolatile Ferroelectric Memories Orlando H. Auciello, Carlos A. Paz de Araújo, Jolanta Celinska Book chapter 2014 15
50 Hospital automation system RFID-based: Technology embedded in smart devices (cards, tags and bracelets) Gustavo Henrique Florentino, Carlos A. Paz de Araújo, Heitor U. Bezerra et al. Conference paper Aug 2008 15

Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.