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Institution · Wolfspeed, Inc. (United States)

Most cited papers from Wolfspeed, Inc. (United States)

Wolfspeed, Inc. (United States)

What are the most cited papers from Wolfspeed, Inc. (United States)?

The most cited paper from Wolfspeed, Inc. (United States) is "30-W/mm GaN HEMTs by Field Plate Optimization" (Yifeng Wu, A. Saxler, M. Moore et al., 2004), with 1,100 citations. Next come "A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs" (996) and "Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide" (641).

Showing 50 of 60 papers. Every paper with more than 106 citations is listed.

Most cited papers, sortable by citations and release date
#Paper
1 30-W/mm GaN HEMTs by Field Plate Optimization Yifeng Wu, A. Saxler, M. Moore et al. · IEEE Electron Device Letters Mar 2004 1,100
2 A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs Raymond S. Pengelly, Simon M. Wood, J. Milligan et al. · IEEE Transactions on Microwave Theory and Techniques 23 Feb 2012 996
3 Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide Gil Yong Chung, Chin Che Tin, John R. Williams et al. · IEEE Electron Device Letters Apr 2001 641
4 High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates Scott T. Sheppard, Kathleen Doverspike, W.L. Pribble et al. · IEEE Electron Device Letters Apr 1999 539
5 Status and prospects for SiC power MOSFETs James A. Cooper, M. R. Melloch, Ranbir Singh et al. · IEEE Transactions on Electron Devices Apr 2002 507
6 Silicon carbide high-power devices Charles E. Weitzel, John W. Palmour, C.H. Carter et al. · IEEE Transactions on Electron Devices 1996 445
7 Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide Robert F. Davis, G. Kelner, Michael S. Shur et al. · Proceedings of the IEEE May 1991 407
8 Characterization, Modeling, and Application of 10-kV SiC MOSFET Jun Wang, Tiefu Zhao, ­Jun Li­ et al. · IEEE Transactions on Electron Devices Aug 2008 396
9 SiC power-switching devices-the second electronics revolution? James A. Cooper, Anant K. Agarwal · Proceedings of the IEEE Jun 2002 393
10 40-W/mm Double Field-plated GaN HEMTs Yifeng Wu, M. Moore, A. Saxler et al. Conference paper Jun 2006 347
11 Cray T3D: a new dimension for Cray Research Roland Kessler, James L. Schwarzmeier Conference paper 31 Dec 2002 304
12 A New Degradation Mechanism in High-Voltage SiC Power MOSFETs Anant K. Agarwal, Fatima Husna, Sarah Kay Haney et al. · IEEE Electron Device Letters 28 Jun 2007 301
13 Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV John W. Palmour, Lin Cheng, Vipindas Pala et al. Conference paper Jun 2014 299
14 Conductivity Anisotropy in Epitaxial 6H and 4H Sic William J. Schaffer, Gerry Negley, Kenneth G. Irvine et al. · MRS Proceedings 1994 292
15 High Switching Performance of 1700V, 50A SiC Power MOSFET over Si IGBT/BiMOSFET for Advanced Power Conversion Applications Samir Hazra, Ankan De, Lin Cheng et al. · IEEE Transactions on Power Electronics 2015 268
16 Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence Ty R. McNutt, Allen R. Hefner, Homer Alan Mantooth et al. · IEEE Transactions on Power Electronics Mar 2007 254
17 Improved oxidation procedures for reduced SiO2/SiC defects Lori A. Lipkin, John W. Palmour · Journal of Electronic Materials May 1996 238
18 SiC materials-progress, status, and potential roadblocks Adrian R. Powell, L.B. Rowland · Proceedings of the IEEE Jun 2002 234
19 SiC power Schottky and PiN diodes Ranbir Singh, James A. Cooper, M. R. Melloch et al. · IEEE Transactions on Electron Devices Apr 2002 232
20 Insulator investigation on SiC for improved reliability Lori A. Lipkin, John W. Palmour · IEEE Transactions on Electron Devices Mar 1999 224
21 Lifetime-limiting defects in n− 4H-SiC epilayers Paul B. Klein, Benjamin V. Shanabrook, S. Huh et al. · Applied Physics Letters 30 Jan 2006 220
22 Highly anisotropic photoenhanced wet etching of n-type GaN Chris Youtsey, I. Adesida, Gary E. Bulman · Applied Physics Letters 13 Oct 1997 210
23 Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB S. Keller, Yifeng Wu, Giacinta Parish et al. · IEEE Transactions on Electron Devices Mar 2001 203
24 A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications Marco J. Pelk, Wah-Peng Neo, John Gajadharsing et al. · IEEE Transactions on Microwave Theory and Techniques Open access Jul 2008 195
25 Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates W. C. Hughes, W. H. Rowland, Mark A. Johnson et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Jul 1995 190
26 6H-silicon carbide devices and applications John W. Palmour, John A. Edmond, Hoyoul Kong et al. · Physica B Condensed Matter Apr 1993 189
27 SiC power diodes provide breakthrough performance for a wide range of applications Allen R. Hefner, Ranbir Singh, Jih‐Sheng Lai et al. · IEEE Transactions on Power Electronics Mar 2001 185
28 Submicron scaling of HBTs Mark J. W. Rodwell, Miguel E. Urteaga, Tittu Varghese Mathew et al. · IEEE Transactions on Electron Devices 2001 181
29 Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC Nelson S. Saks, Anant K. Agarwal · Applied Physics Letters 13 Nov 2000 172
30 Silicon carbide power device development for industrial markets John W. Palmour Conference paper Dec 2014 171
31 Comparisons of SiC MOSFET and Si IGBT Based Motor Drive Systems Tiefu Zhao, Jun Wang, Alex Q. Huang et al. · Conference record Conference paper Sep 2007 167
32 Silicon carbide UV photodiodes D.M. Brown, E.T. Downey, Mario Ghezzo et al. · IEEE Transactions on Electron Devices 1993 163
33 Characterization and optimization of the SiO2/SiC metal-oxide semiconductor interface J. N. Shenoy, Gowrishankar Chindalore, M. R. Melloch et al. · Journal of Electronic Materials Apr 1995 162
34 1800 V NPN bipolar junction transistors in 4H-SiC Sei‐Hyung Ryu, Anant K. Agarwal, Ranbir Singh et al. · IEEE Electron Device Letters Mar 2001 161
35 10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems Vipindas Pala, Edward V. Brunt, Lin Cheng et al. Conference paper Sep 2014 158
36 Transition layers at the SiO2∕SiC interface Tsvetanka S. Zheleva, Aivars J. Lelis, Gerd J. Duscher et al. · Applied Physics Letters 14 Jul 2008 157
37 Reliability and accuracy of dermatologists’ clinic-based and digital image consultations John D. Whited, Russell P. Hall, David L. Simel et al. · Journal of the American Academy of Dermatology Nov 1999 156
38 Smooth n-type GaN surfaces by photoenhanced wet etching Chris Youtsey, I. Adesida, Lucia Romano et al. · Applied Physics Letters 2 Feb 1998 153
39 10-kV, 123-m $Omega cdot $ cm $^2$ 4H-SiC Power DMOSFETs Sei‐Hyung Ryu, Sumi Krishnaswami, Michael J. O’Loughlin et al. · IEEE Electron Device Letters 27 Jul 2004 153
40 Dynamic and static behavior of packaged silicon carbide MOSFETs in paralleled applications Gangyao Wang, John Mookken, Julius Rice et al. Conference paper Mar 2014 148
41 Characterization of Electrodynamic Screen Performance for Dust Removal from Solar Panels and Solar Hydrogen Generators Malay K. Mazumder, Mark N. Horenstein, Jeremy W. Stark et al. · IEEE Transactions on Industry Applications 16 Apr 2013 141
42 High efficiency GaN-based LEDs and lasers on SiC John A. Edmond, Amber C. Abare, Mike Bergman et al. · Journal of Crystal Growth Dec 2004 141
43 Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiC Gary E. Bulman, Kathleen Doverspike, Scott T. Sheppard et al. · Electronics Letters 28 Aug 1997 135
44 Progress in SiC: from material growth to commercial device development C.H. Carter, Valeri F. Tsvetkov, R. C. Glass et al. · Materials Science and Engineering B Jul 1999 130
45 Photoluminescence and transport studies of boron in 4H SiC S.G. Sridhara, L. L. Clemen, Robert P. Devaty et al. · Journal of Applied Physics 15 Jun 1998 130
46 Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors Sarit Dhar, Sarah Kay Haney, Lin Cheng et al. · Journal of Applied Physics Sep 2010 125
47 The status of SiC bulk growth from an industrial point of view St.G. Müller, R. C. Glass, H. McD. Hobgood et al. · Journal of Crystal Growth Apr 2000 124
48 Contact resistance measurements on p-type 6H-SiC J. Crofton, Peter A. Barnes, John R. Williams et al. · Applied Physics Letters 25 Jan 1993 124
49 Blue LEDs, UV photodiodes and high-temperature rectifiers in 6H-SiC John A. Edmond, Hua‐Shuang Kong, Calvin H. Carter · Physica B Condensed Matter Apr 1993 121
50 SiC Seeded Crystal Growth R. C. Glass, D. Henshall, Valeri F. Tsvetkov et al. · physica status solidi (b) Jul 1997 119

Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.