Gary E. Bulman
Gary E. Bulman publishes mostly in Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics, on topics such as GaN-based semiconductor devices and materials, Semiconductor Quantum Structures and Devices and Semiconductor materials and devices.
- World rank
- #1,425,579 of 7,710,434 ranked researchers
- Rank in United States
- #449,423 of 1,627,098
- Works
- 85
- Citations
- 2.1k
- Citations per work
- 25.0
What does Gary E. Bulman research?
Gary E. Bulman's work is mostly in Engineering (36%), Physics and Astronomy (33%), Materials Science (16%).
Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.
The fields and subfields, with their numbers
- Physical Sciences7285.2%
- Engineering3136.0%
- Physics and Astronomy2833.2%
- Materials Science1416.0%
- Everything else1314.8%
- 1Electrical and Electronic Engineering31% of their works
- 2Condensed Matter Physics18% of their works
- 3Atomic and Molecular Physics, and Optics15% of their works
- 4Materials Chemistry10% of their works
- 5Electronic, Optical and Magnetic Materials6% of their works
- 6Mechanics of Materials5% of their works
Research topics
- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Advanced Semiconductor Detectors and Materials
- Ga2O3 and related materials
- Plasma Diagnostics and Applications
- Metal and Thin Film Mechanics
- Advanced Thermoelectric Materials and Devices
Which keywords describe Gary E. Bulman's research?
The keywords of their largest research topics: Band Parameters, Nanowires, Semiconductor, III-Nitrides, Semiconductors, Quantum Dots, Single-Photon Source and Thin Films.
- Thermoelectric
- Semiconductor Industry
- Nanoindentation
- Ultrawide Bandgap
- Infrared Detectors
- High-k Dielectrics
- Thin Films
- Quantum Dots
- III-Nitrides
- Nanowires
- Band Parameters
- Semiconductor
- Semiconductors
- Single-Photon Source
- Atomic Layer Deposition
- Gallium Oxide
- Semiconductor Materials
- Coatings
- Plasma Etching
- Materials
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most.
All 20 words, with their numbers
- Band Parameters782 topics
- Nanowires782 topics
- Semiconductor482 topics
- III-Nitrides451 topic
- Semiconductors451 topic
- Quantum Dots331 topic
- Single-Photon Source331 topic
- Thin Films282 topics
- Atomic Layer Deposition191 topic
- High-k Dielectrics191 topic
- Gallium Oxide151 topic
- Infrared Detectors151 topic
- Semiconductor Materials151 topic
- Ultrawide Bandgap151 topic
- Coatings131 topic
- Nanoindentation131 topic
- Plasma Etching131 topic
- Semiconductor Industry131 topic
- Materials111 topic
- Thermoelectric111 topic
Where does Gary E. Bulman work?
Gary E. Bulman's main affiliation in the publication record is Wolfspeed, Inc. (United States), United States.
How many publications and citations does Gary E. Bulman have?
OpenAlex counts 85 works and 2,125 citations for Gary E. Bulman, an h-index of 21, ranking #1,425,579 of 7,710,434 researchers worldwide on the quality score.
Ranked on field-normalised excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
Papers, co-authors, who cited this work and researchers on the nearest topics have tabs of their own, above. Is this your page? Claim it with your ORCID iD, or request a correction or removal.
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