J. R. Lothian
J. R. Lothian publishes mostly in Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics, on topics such as Semiconductor materials and devices, GaN-based semiconductor devices and materials and Semiconductor Quantum Structures and Devices.
- World rank
- #5,150,864 of 7,710,434 ranked researchers
- Rank in United States
- #1,325,607 of 1,627,098
- Works
- 155
- Citations
- 2.3k
- Citations per work
- 14.6
What does J. R. Lothian research?
J. R. Lothian's work is mostly in Engineering (59%), Physics and Astronomy (27%), Materials Science (8%).
Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.
The fields and subfields, with their numbers
- Physical Sciences14493.2%
- Engineering9158.6%
- Physics and Astronomy4227.0%
- Materials Science127.6%
- Everything else116.8%
- 1Electrical and Electronic Engineering54% of their works
- 2Atomic and Molecular Physics, and Optics16% of their works
- 3Condensed Matter Physics11% of their works
- 4Mechanics of Materials4% of their works
- 5Materials Chemistry4% of their works
- 6Electronic, Optical and Magnetic Materials4% of their works
Research topics
- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Metal and Thin Film Mechanics
- Radio Frequency Integrated Circuit Design
- Plasma Diagnostics and Applications
Which keywords describe J. R. Lothian's research?
The keywords of their largest research topics: Atomic Layer Deposition, High-k Dielectrics, Band Parameters, Nanowires, III-Nitrides, Semiconductors, Quantum Dots and Semiconductor.
- Semiconductor Industry
- Oscillators
- Thin Films
- Schottky Barrier
- Tunnel Field-Effect Transistors
- Semiconductor
- Semiconductors
- Nanowires
- High-k Dielectrics
- Atomic Layer Deposition
- Band Parameters
- III-Nitrides
- Quantum Dots
- Nanowire Transistors
- Metal-Semiconductor Contacts
- Nanoindentation
- CMOS
- Plasma Etching
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most.
All 18 words, with their numbers
- Atomic Layer Deposition1031 topic
- High-k Dielectrics1031 topic
- Band Parameters982 topics
- Nanowires982 topics
- III-Nitrides521 topic
- Semiconductors521 topic
- Quantum Dots461 topic
- Semiconductor461 topic
- Nanowire Transistors251 topic
- Tunnel Field-Effect Transistors251 topic
- Metal-Semiconductor Contacts201 topic
- Schottky Barrier201 topic
- Nanoindentation191 topic
- Thin Films191 topic
- CMOS171 topic
- Oscillators171 topic
- Plasma Etching151 topic
- Semiconductor Industry151 topic
Where does J. R. Lothian work?
J. R. Lothian's main affiliation in the publication record is AT&T (United States), United States.
How many publications and citations does J. R. Lothian have?
OpenAlex counts 155 works and 2,263 citations for J. R. Lothian, an h-index of 28, ranking #5,150,864 of 7,710,434 researchers worldwide on the quality score.
Ranked on field-normalised excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
Papers, co-authors, who cited this work and researchers on the nearest topics have tabs of their own, above. Is this your page? Claim it with your ORCID iD, or request a correction or removal.
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