William S. Hobson
William S. Hobson publishes mostly in Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics, on topics such as Semiconductor materials and devices, Semiconductor Quantum Structures and Devices and Semiconductor Lasers and Optical Devices.
- World rank
- #4,840,975 of 7,710,434 ranked researchers
- Rank in United States
- #1,266,236 of 1,627,098
- Works
- 332
- Citations
- 5k
- Citations per work
- 15.2
What does William S. Hobson research?
William S. Hobson's work is mostly in Engineering (61%), Physics and Astronomy (26%), Materials Science (8%).
Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.
The fields and subfields, with their numbers
- Physical Sciences31494.6%
- Engineering20361.1%
- Physics and Astronomy8626.0%
- Materials Science257.5%
- Everything else185.4%
- 1Electrical and Electronic Engineering57% of their works
- 2Atomic and Molecular Physics, and Optics20% of their works
- 3Condensed Matter Physics6% of their works
- 4Materials Chemistry5% of their works
- 5Biomedical Engineering4% of their works
- 6Electronic, Optical and Magnetic Materials2% of their works
Research topics
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Semiconductor Lasers and Optical Devices
- Photonic and Optical Devices
- GaN-based semiconductor devices and materials
- Plasma Diagnostics and Applications
- Semiconductor materials and interfaces
- Advancements in Semiconductor Devices and Circuit Design
Which keywords describe William S. Hobson's research?
The keywords of their largest research topics: Band Parameters, Nanowires, Atomic Layer Deposition, High-k Dielectrics, Quantum Dots, Semiconductor, Optical Interconnects and Semiconductor Lasers.
- Tunnel Field-Effect Transistors
- Schottky Barrier
- Semiconductor Industry
- Semiconductors
- Silicon Photonics
- Semiconductor Lasers
- Semiconductor
- High-k Dielectrics
- Nanowires
- Band Parameters
- Atomic Layer Deposition
- Quantum Dots
- Optical Interconnects
- Optical Modulators
- III-Nitrides
- Plasma Etching
- Metal-Semiconductor Contacts
- Nanowire Transistors
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most.
All 18 words, with their numbers
- Band Parameters1902 topics
- Nanowires1902 topics
- Atomic Layer Deposition1871 topic
- High-k Dielectrics1871 topic
- Quantum Dots1351 topic
- Semiconductor1351 topic
- Optical Interconnects861 topic
- Semiconductor Lasers861 topic
- Optical Modulators771 topic
- Silicon Photonics771 topic
- III-Nitrides551 topic
- Semiconductors551 topic
- Plasma Etching451 topic
- Semiconductor Industry451 topic
- Metal-Semiconductor Contacts331 topic
- Schottky Barrier331 topic
- Nanowire Transistors311 topic
- Tunnel Field-Effect Transistors311 topic
Where does William S. Hobson work?
William S. Hobson's main affiliation in the publication record is AT&T (United States), United States.
How many publications and citations does William S. Hobson have?
OpenAlex counts 332 works and 5,041 citations for William S. Hobson, an h-index of 33, ranking #4,840,975 of 7,710,434 researchers worldwide on the quality score.
Ranked on field-normalised excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
Papers, co-authors, who cited this work and researchers on the nearest topics have tabs of their own, above. Is this your page? Claim it with your ORCID iD, or request a correction or removal.
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