Silicon Carbide Semiconductor Technologies
Silicon Carbide Semiconductor Technologies is a research topic within Electrical and Electronic Engineering. Science Explorer counts 49k research works in it since 1950. 9.9% of them reached the world's top 10% most cited for their field and year.
This cluster of papers explores advancements in power electronics technology, focusing on wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), reliability of power devices, high-temperature electronics, IGBT modules, thermal management, and failure modes. The papers cover topics such as the performance evaluation of SiC and GaN power devices, material science and device physics in SiC technology, condition monitoring for device reliability, and the potential of SiC nanowires in power electronics.
- Wide Bandgap Semiconductors
- Reliability
- Silicon Carbide
- Power Devices
- High-Temperature Electronics
- IGBT Modules
- GaN Power Devices
- Thermal Management
- Failure Modes
- SiC Nanowires
- Research works
- 49k fractional, since 1950
- In the world top 10%
- 4.8k per year above
- Top-10% rate
- 9.9% share of its works in the world top 10%
- Growth, 2018-21 → 2022-25
- +7% the tick is no change
- Largest producer
China
44% of the 10 largest, 2022-now
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