Silicon Carbide Semiconductor Technologies
Silicon Carbide Semiconductor Technologies is a research topic within Electrical and Electronic Engineering. Science Explorer counts 49k research works in it since 1950. 9.9% of them reached the world's top 10% most cited for their field and year.
This cluster of papers explores advancements in power electronics technology, focusing on wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), reliability of power devices, high-temperature electronics, IGBT modules, thermal management, and failure modes. The papers cover topics such as the performance evaluation of SiC and GaN power devices, material science and device physics in SiC technology, condition monitoring for device reliability, and the potential of SiC nanowires in power electronics.
- Wide Bandgap Semiconductors
- Reliability
- Silicon Carbide
- Power Devices
- High-Temperature Electronics
- IGBT Modules
- GaN Power Devices
- Thermal Management
- Failure Modes
- SiC Nanowires
- Research works
- 49k fractional, since 1950
- In the world top 10%
- 4.8k per year above
- Top-10% rate
- 9.9% share of its works in the world top 10%
- Growth, 2018-21 → 2022-25
- +7% the tick is no change
- Largest producer
China
44% of the 10 largest, 2022-now
Which countries lead Silicon Carbide Semiconductor Technologies research?
By volume, China and the United States publish the most (3.5k and 1.3k works in 2022-now).
By volume, 2022-now
- 1
China 3.5k works
- 2
United States 1.3k works
- 3
India 1k works
- 4
Japan 493 works
- 5
Germany 400 works
- 6
South Korea 313 works
- 7
Italy 265 works
- 8
France 260 works
- 9
United Kingdom 240 works
- 10
Taiwan 219 works
How concentrated that is
The same countries as shares of everything the list above accounts for. A node where two countries do two thirds of the work and one spread evenly across twelve read alike as a ranking and not at all alike here.
Shares of the rows listed above, not of the whole node.
Which institutions lead Silicon Carbide Semiconductor Technologies research?
By volume in 2022-now, Chinese Academy of Sciences publishes the most Silicon Carbide Semiconductor Technologies research, followed by Zhejiang University and Xi'an Jiaotong University.
By volume, 2022-now
- 1
Chinese Academy of Sciences
China 192 works
- 2
Zhejiang University
China 139 works
- 3
Xi'an Jiaotong University
China 133 works
- 4
Xidian University
China 108 works
- 5
Huazhong University of Science and Technology
China 107 works
- 6
University of Electronic Science and Technology of China
China 101 works
- 7
Aalborg University
Denmark 86 works
- 8
Harbin Institute of Technology
China 85 works
- 9
Chongqing University
China 85 works
- 10
Centre National de la Recherche Scientifique
France 85 works
Who are the leading researchers in Silicon Carbide Semiconductor Technologies?
The most-cited researchers publishing on Silicon Carbide Semiconductor Technologies include M. Shoji, Zhong Lin Wang and Yury G. Gogotsi.
- 1
M. Shoji
Japan 806k citations
- 2
Zhong Lin Wang
United States 491k citations
- 3
Yury G. Gogotsi
United States 313k citations
- 4
Wei Huang
China 267k citations
- 5
M. Weber
Israel 267k citations
- 6
Kenji Watanabe
Japan 237k citations
- 7
Kai You Wang
China 224k citations
- 8
Jürgen Furthmüller
Germany 217k citations
- 9
Frede Blaabjerg
Denmark 203k citations
- 10
Steven A. Rosenberg
United States 200k citations
Ranked by citations received across their whole record, among researchers with at least three works on this topic.
Where is Silicon Carbide Semiconductor Technologies research done?
The largest centres of Silicon Carbide Semiconductor Technologies research in 2022-now are Beijing (China), Xi'an (China), Shanghai (China) and Chengdu (China). Among places with at least 20 works in it, it is an unusually large share of all research in Xi'an, Fayetteville and Aalborg.
Largest cities, 2022-now
Where it is the local speciality
- Xi'an24.7 works38×
- FayettevilleUS · 58.3 works24×
- AalborgDK · 86.0 works16×
Location quotient: how much more of its research is in Silicon Carbide Semiconductor Technologies than the world average.
Where is the best place to study Silicon Carbide Semiconductor Technologies?
Among universities, judged by research, Virginia Tech, Zhejiang University and Huazhong University of Science and Technology score highest, combining excellence, specialisation, size, growth and international reach. Research strength is one signal when choosing where to study; it does not measure teaching.
One dot per university in the first ten of the table below, at the default weights. The upper left is the interesting corner: small places doing unusually strong work.
Universities only. The score blends excellence (40%), size (30%), specialisation (10%), growth (10%), international reach (10%), 2022-now; growth compares 2018-21 with 2022-25 and counts up to +20%, since a jump from a small base is mostly noise.
Every institution in Silicon Carbide Semiconductor Technologies, country by countryIs Silicon Carbide Semiconductor Technologies research growing?
Output in 2022-2025 was 7% higher than in 2018-2021, peaking in 2025. The fastest-growing topics are Silicon Carbide Semiconductor Technologies.
The same series as a ribbon: one cell per year, darker for more. The line above answers how much; this answers when.
Its share of all research
Growing output can still be a shrinking share: all of science grows. This is Silicon Carbide Semiconductor Technologies as a percentage of every work published that year, 0.039% in 2024.
Fractional works of Silicon Carbide Semiconductor Technologies over all fractional works that year. How the balance of science has shifted.
How much of it reaches the world top 10%
Year by year.
Of each year's works in it, the share that reached the world's 10% most cited for their field and year. A field is the world for its own topics, so there is no other line to hold it against.
Which topics inside it are moving
Growth and decline on one axis around a shared zero. Two lists side by side hide the thing that matters: whether the growth dwarfs the decline, or the other way round.
Discussion
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