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Silicon Carbide Semiconductor Technologies

Silicon Carbide Semiconductor Technologies is a research topic within Electrical and Electronic Engineering. Science Explorer counts 49k research works in it since 1950. 9.9% of them reached the world's top 10% most cited for their field and year.

This cluster of papers explores advancements in power electronics technology, focusing on wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), reliability of power devices, high-temperature electronics, IGBT modules, thermal management, and failure modes. The papers cover topics such as the performance evaluation of SiC and GaN power devices, material science and device physics in SiC technology, condition monitoring for device reliability, and the potential of SiC nanowires in power electronics.

  • Wide Bandgap Semiconductors
  • Reliability
  • Silicon Carbide
  • Power Devices
  • High-Temperature Electronics
  • IGBT Modules
  • GaN Power Devices
  • Thermal Management
  • Failure Modes
  • SiC Nanowires
Research works
49k
fractional, since 1950
In the world top 10%
4.8k
per year above
Top-10% rate
9.9%
share of its works in the world top 10%
Growth, 2018-21 → 2022-25
+7%
the tick is no change
Largest producer
China
44% of the 10 largest, 2022-now
Silicon Carbide Semiconductor Technologies

Which countries lead Silicon Carbide Semiconductor Technologies research?

By volume, China and the United States publish the most (3.5k and 1.3k works in 2022-now).

By volume, 2022-now

  1. 1 China 3.5k works
  2. 2 United States 1.3k works
  3. 3 India 1k works
  4. 4 Japan 493 works
  5. 5 Germany 400 works
  6. 6 South Korea 313 works
  7. 7 Italy 265 works
  8. 8 France 260 works
  9. 9 United Kingdom 240 works
  10. 10 Taiwan 219 works

How concentrated that is

The same countries as shares of everything the list above accounts for. A node where two countries do two thirds of the work and one spread evenly across twelve read alike as a ranking and not at all alike here.

China: 44.1%United States: 15.6%India: 13.0%Japan: 6.1%6 others listed: 21.2%44%largest
China3,538 · 44.1%United States1,250 · 15.6%India1,042 · 13.0%Japan493 · 6.1%6 others listed1,697 · 21.2%

Shares of the rows listed above, not of the whole node.

Which institutions lead Silicon Carbide Semiconductor Technologies research?

By volume in 2022-now, Chinese Academy of Sciences publishes the most Silicon Carbide Semiconductor Technologies research, followed by Zhejiang University and Xi'an Jiaotong University.

Who are the leading researchers in Silicon Carbide Semiconductor Technologies?

The most-cited researchers publishing on Silicon Carbide Semiconductor Technologies include M. Shoji, Zhong Lin Wang and Yury G. Gogotsi.

  1. 1 M. Shoji Japan 806k citations
  2. 2 Zhong Lin Wang United States 491k citations
  3. 3 Yury G. Gogotsi United States 313k citations
  4. 4 Wei Huang China 267k citations
  5. 5 M. Weber Israel 267k citations
  6. 6 Kenji Watanabe Japan 237k citations
  7. 7 Kai You Wang China 224k citations
  8. 8 Jürgen Furthmüller Germany 217k citations
  9. 9 Frede Blaabjerg Denmark 203k citations
  10. 10 Steven A. Rosenberg United States 200k citations

Ranked by citations received across their whole record, among researchers with at least three works on this topic.

What are the most cited papers in Silicon Carbide Semiconductor Technologies?

The most cited paper in Silicon Carbide Semiconductor Technologies is "Multilevel inverters: a survey of topologies, controls, and applications" (José Rodríguez, Jih‐Sheng Lai, Fang Zheng Peng, 2002), with 6,729 citations. Next come "Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies" (2,726) and "A Survey of Wide Bandgap Power Semiconductor Devices" (2,653).

Most cited papers
#PaperReleasedCitations
1 Multilevel inverters: a survey of topologies, controls, and applications José Rodríguez, Jih‐Sheng Lai, Fang Zheng Peng · IEEE Transactions on Industrial Electronics Open access Aug 2002 6,729
2 Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies Hadis Morkoç, S. Strite, Guangjun Gao et al. · Journal of Applied Physics Aug 1994 2,726
3 A Survey of Wide Bandgap Power Semiconductor Devices José del R. Millán, Philippe Godignon, X. Perpiñà et al. · IEEE Transactions on Power Electronics 14 Jun 2013 2,653
4 Multilevel converters-a new breed of power converters Jih‐Sheng Lai, Fang Zheng Peng · IEEE Transactions on Industry Applications 1996 2,606
5 A three-phase soft-switched high-power-density DC/DC converter for high-power applications R.W.A.A. De Doncker, D.M. Divan, M.H. Kheraluwala · IEEE Transactions on Industry Applications 1991 2,529
All 100 most cited papers, with filters and sorting

Where is Silicon Carbide Semiconductor Technologies research done?

The largest centres of Silicon Carbide Semiconductor Technologies research in 2022-now are Beijing (China), Xi'an (China), Shanghai (China) and Chengdu (China). Among places with at least 20 works in it, it is an unusually large share of all research in Xi'an, Fayetteville and Aalborg.

Largest cities, 2022-now

  1. 1 BeijingChina 642 works
  2. 2 Xi'anChina 322 works
  3. 3 ShanghaiChina 232 works
  4. 4 ChengduChina 230 works
  5. 5 NanjingChina 210 works
  6. 6 HangzhouChina 193 works
  7. 7 WuhanChina 193 works
  8. 8 TokyoJapan 167 works
  9. 9 GuangzhouChina 137 works
  10. 10 ChangshaChina 126 works

Where it is the local speciality

  1. Xi'an24.7 works38×
  2. FayettevilleUS · 58.3 works24×
  3. AalborgDK · 86.0 works16×
← less than its size predicts1×more →

Location quotient: how much more of its research is in Silicon Carbide Semiconductor Technologies than the world average.

See Silicon Carbide Semiconductor Technologies on the map

Where is the best place to study Silicon Carbide Semiconductor Technologies?

Among universities, judged by research, Virginia Tech, Zhejiang University and Huazhong University of Science and Technology score highest, combining excellence, specialisation, size, growth and international reach. Research strength is one signal when choosing where to study; it does not measure teaching.

0%20%40%mean 16.45%fractional works in this field (log) →share of work in the world top 10% →Virginia TechHuazhong University …Zhejiang UniversityXi'an Jiaotong Unive…
above the meannear itbelow it

One dot per university in the first ten of the table below, at the default weights. The upper left is the interesting corner: small places doing unusually strong work.

Excellenceshare of its work in the world top 10%, 2022-now and all time averaged
40%
Specialisationhow much of its work is in this field, counted up to 10× the world share
10%
Sizeits output in this field, on a log scale
30%
Growthoutput growth, counted from -20% to +20%
10%
Internationalshare of its work with a co-author abroad
10%
Each slider sets a weight; the share it gets of the score is beside it.
#UniversityScoreTop 10%SpecialisationWorksGrowth
1Virginia TechUnited States 71.726.5%15.5×75 -5.4%
2Zhejiang UniversityChina 68.013.6%6.0×139 +41.7%
3Huazhong University of Science and TechnologyChina 64.613.8%6.8×107 +23.0%
4Xi'an Jiaotong UniversityChina 63.710.3%8.8×133 +20.7%
5University of TabrizIran 63.233.9%9.7×20 -29.5%
6Harbin Institute of TechnologyChina 61.814.4%6.0×85 +22.3%
7Tsinghua UniversityChina 61.814.6%4.2×84 +27.8%
8Aalborg UniversityDenmark 60.813.8%17.5×86 -31.1%
9Hunan UniversityChina 60.715.0%10.1×62 +36.7%
10Chongqing UniversityChina 59.68.6%9.1×85 +69.8%

Universities only. The score blends excellence (40%), size (30%), specialisation (10%), growth (10%), international reach (10%), 2022-now; growth compares 2018-21 with 2022-25 and counts up to +20%, since a jump from a small base is mostly noise.

Every institution in Silicon Carbide Semiconductor Technologies, country by country

Is Silicon Carbide Semiconductor Technologies research growing?

Output in 2022-2025 was 7% higher than in 2018-2021, peaking in 2025. The fastest-growing topics are Silicon Carbide Semiconductor Technologies.

still counting19801990200020102020
grewheldshrank

The same series as a ribbon: one cell per year, darker for more. The line above answers how much; this answers when.

Its share of all research

Growing output can still be a shrinking share: all of science grows. This is Silicon Carbide Semiconductor Technologies as a percentage of every work published that year, 0.039% in 2024.

still counting0.050%0.10%0.15%Silicon Carbide Semiconductor Technologies0.042% in 202519801990200020102020

Fractional works of Silicon Carbide Semiconductor Technologies over all fractional works that year. How the balance of science has shifted.

How much of it reaches the world top 10%

Year by year.

still counting5%10%15%Silicon Carbide Semiconductor Technologies9.7% in 2025200020102020

Of each year's works in it, the share that reached the world's 10% most cited for their field and year. A field is the world for its own topics, so there is no other line to hold it against.

Which topics inside it are moving

Growth and decline on one axis around a shared zero. Two lists side by side hide the thing that matters: whether the growth dwarfs the decline, or the other way round.

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