Most cited papers from Tondi Elektroonika (Estonia)
What are the most cited papers from Tondi Elektroonika (Estonia)?
The most cited paper from Tondi Elektroonika (Estonia) is "Investigation of the strain relaxation mechanism in the Si–SiO2 system during the process of its formation" (Daniel Kropman, V. Pöll, Tiit Kärner et al., 2003), with 6 citations. Next come "Defect structure relaxation process in the Si–SiO2 system" (5) and "Effect of ultrasonic treatment on the defect structure of the Si–SiO2 system" (4).
Showing 5 of 5 papers. Every paper is listed.
| # | Paper | ||
|---|---|---|---|
| 1 | Investigation of the strain relaxation mechanism in the Si–SiO2 system during the process of its formation Daniel Kropman, V. Pöll, Tiit Kärner et al. · physica status solidi (a) | Aug 2003 | 6 |
| 2 | Defect structure relaxation process in the Si–SiO2 system Daniel Kropman, U. Abru, Tiit Kärner · Applied Surface Science | Oct 2000 | 5 |
| 3 | Effect of ultrasonic treatment on the defect structure of the Si–SiO2 system Daniel Kropman, V. Pöll, L. Tambek et al. · Ultrasonics | Oct 1998 | 4 |
| 4 | Interaction between point defects, extended defects and impurities in the Si–SiO2 system during the process of its formation Daniel Kropman, Tiit Kärner, U. Abru et al. · Materials Science and Engineering B | 8 Sep 2004 | 1 |
| 5 | Point Defects Interaction with Extended Defects and Impurities and its Influences on the Si-SiO2 System Properties Daniel Kropman, U. Abru, Tiit Kärner et al. · MRS Proceedings | 2005 | 0 |
Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for an institution when any of its authors gave it as an affiliation; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.