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Company · Tallinn · Estonia

Tondi Elektroonika (Estonia)

tondi.ee/enROR OpenAlex
Research works
4
fractional, all time
Citations
8
2.3 per fractional work
Top-10% rate
3.7%
all institutions 10.0%
Open access
38%
world 40%
International
6%
world 18%
Tondi Elektroonika (Estonia)

Not ranked overall: Tondi Elektroonika (Estonia) is under the volume floor below which a citation excellence rate is noise. Not ranked is not the same as ranked last.

Which fields of science does Tondi Elektroonika (Estonia) work in?

In all years, 72% of research at Tondi Elektroonika (Estonia) is in Physical Sciences, 28% in Social Sciences. Its largest fields are Engineering (56%), Arts and Humanities (28%), Materials Science (14%). It does 1.3× the world's share of Physical Sciences.

Physical Sciences: 3 fractional works · 72.2% of its workEngineering: 2 fractional works · 55.6% of its workMaterials Science: 0 fractional works · 13.9% of its workPhysics and Astronomy: 0 fractional works · 2.8% of its workSocial Sciences: 1 fractional works · 27.8% of its workArts and Humanities: 1 fractional works · 27.8% of its workALL ITS WORKTondiElektroonika…4fractional works, all years
Physical Sciences72%Social Sciences28%

Each ring splits the one inside it: the four domains of science, their fields. Size is fractional works in all years. Every slice is a page; the interactive view zooms down to single topics and colours each by how much more of it this institution does than the world.

Its 2 domains and 4 fields, with their numbers
    1. Engineering255.6%
    2. Materials Science013.9%
    3. Physics and Astronomy02.8%
    1. Arts and Humanities127.8%
All of science, and how each field's share has moved since 1950: the Science domain explorer

What are the most cited papers from Tondi Elektroonika (Estonia)?

The most cited paper from Tondi Elektroonika (Estonia) is "Investigation of the strain relaxation mechanism in the Si–SiO2 system during the process of its formation" (Daniel Kropman, V. Pöll, Tiit Kärner et al., 2003), with 6 citations. Next come "Defect structure relaxation process in the Si–SiO2 system" (5) and "Effect of ultrasonic treatment on the defect structure of the Si–SiO2 system" (4).

Most cited papers
#PaperReleasedCitations
1 Investigation of the strain relaxation mechanism in the Si–SiO2 system during the process of its formation Daniel Kropman, V. Pöll, Tiit Kärner et al. · physica status solidi (a) Aug 2003 6
2 Defect structure relaxation process in the Si–SiO2 system Daniel Kropman, U. Abru, Tiit Kärner · Applied Surface Science Oct 2000 5
3 Effect of ultrasonic treatment on the defect structure of the Si–SiO2 system Daniel Kropman, V. Pöll, L. Tambek et al. · Ultrasonics Oct 1998 4
4 Interaction between point defects, extended defects and impurities in the Si–SiO2 system during the process of its formation Daniel Kropman, Tiit Kärner, U. Abru et al. · Materials Science and Engineering B 8 Sep 2004 1
5 Point Defects Interaction with Extended Defects and Impurities and its Influences on the Si-SiO2 System Properties Daniel Kropman, U. Abru, Tiit Kärner et al. · MRS Proceedings 2005 0
All 5 most cited papers, with filters and sorting

Which research topics does Tondi Elektroonika (Estonia) publish most on?

By volume: Silicon and Solar Cell Technologies, Silicon Nanostructures and Photoluminescence, Linguistic research and analysis and Linguistic Education and Pedagogy.

Silicon and Solar Cell T…1Silicon and Solar Cell Technologies: 1 fractional worksSilicon Nanostructures and Photoluminescence: 0 fractional worksLinguistic research and analysis: 0 fractional worksLinguistic Education and…0Linguistic Education and Pedagogy: 0 fractional worksIon-surface interactions…0Ion-surface interactions and analysis: 0 fractional worksIntegrated Circuits and Semiconductor Failure Analysis: 0 fractional worksThin-Film Transistor Technologies: 0 fractional worksAdvanced Surface Polishing Techniques: 0 fractional worksIron and Steelmaking Processes: 0 fractional worksMetallurgical Processes and Thermodynamics: 0 fractional works
Electrical and Electronic EngineeringMaterials ChemistryLanguage and LinguisticsComputational Mechanics2 others

Area is fractional works; colour is the subfield each topic belongs to.

  1. 1 Silicon and Solar Cell Technologies Electrical and Electronic Engineering 1 works
  2. 2 Silicon Nanostructures and Photoluminescence Materials Chemistry 0 works
  3. 3 Linguistic research and analysis Language and Linguistics 0 works
  4. 4 Linguistic Education and Pedagogy Language and Linguistics 0 works
  5. 5 Ion-surface interactions and analysis Computational Mechanics 0 works
  6. 6 Integrated Circuits and Semiconductor Failure Analysis Electrical and Electronic Engineering 0 works
  7. 7 Thin-Film Transistor Technologies Electrical and Electronic Engineering 0 works
  8. 8 Advanced Surface Polishing Techniques Biomedical Engineering 0 works
  9. 9 Iron and Steelmaking Processes Mechanical Engineering 0 works
  10. 10 Metallurgical Processes and Thermodynamics Mechanical Engineering 0 works

How open and international is its research?

Against the world's own shares: the tick on each track. Both are shares of its output, so they sit on one scale and can be read against each other as well as against the world.

openly available37.7%not open62.3%

World: 40% of research is openly available.

with international co-authors5.7%domestic only94.3%

World: 18% is written across borders.

How has Tondi Elektroonika (Estonia)'s research output changed?

200020052010
grewheldshrank

The same series as a ribbon: one cell per year, darker for more. The line above answers how much; this answers when.

Other research institutions in Tallinn

All research institutions in Tallinn

Research measures only: rankings here say nothing about teaching, admissions or student experience. Comparable institutions and collaboration partners have tabs of their own, above.

Discussion

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