Feng Lin
Feng Lin publishes mostly in Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering, on topics such as Graphene research and applications, Advancements in Semiconductor Devices and Circuit Design and Silicon Carbide Semiconductor Technologies.
- World rank
- #1,330,071 of 7,710,434 ranked researchers
- Rank in China
- #195,347 of 978,568
- Works
- 150
- Citations
- 3.7k
- Citations per work
- 24.8
What does Feng Lin research?
Feng Lin's work is mostly in Engineering (34%), Materials Science (30%), Chemistry (6%).
Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.
The fields and subfields, with their numbers
- Physical Sciences10670.6%
- Engineering5134.0%
- Materials Science4530.1%
- Chemistry106.5%
- Everything else4429.4%
- 1Electrical and Electronic Engineering24% of their works
- 2Materials Chemistry20% of their works
- 3Biomedical Engineering10% of their works
- 4Organic Chemistry6% of their works
- 5Polymers and Plastics5% of their works
- 6Electronic, Optical and Magnetic Materials5% of their works
Research topics
- Graphene research and applications
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- Quantum Dots Synthesis And Properties
- Semiconductor materials and devices
- Metamaterials and Metasurfaces Applications
- Silicone and Siloxane Chemistry
- Advanced Photocatalysis Techniques
Which keywords describe Feng Lin's research?
The keywords of their largest research topics: Nanocomposites, Graphene, Carbon Nanotubes, Two-Dimensional Materials, Nanocrystals, Nanowire Transistors, Quantum Dots and Reliability.
- Semiconductor
- Polyhedral Oligomeric Silsesquioxanes
- Metamaterials
- High-k Dielectrics
- Wide Bandgap Semiconductors
- Reliability
- Nanowire Transistors
- Two-Dimensional Materials
- Graphene
- Nanocomposites
- Carbon Nanotubes
- Nanocrystals
- Quantum Dots
- Tunnel Field-Effect Transistors
- Atomic Layer Deposition
- Hybrid Materials
- Negative Refraction
- Photocatalyst
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most. The words come from the keyword list OpenAlex gives each topic, not from the text of the papers, so a word can appear that none of the papers uses.
All 18 words, with their numbers
- Nanocomposites302 topics
- Graphene292 topics
- Carbon Nanotubes191 topic
- Two-Dimensional Materials191 topic
- Nanocrystals131 topic
- Nanowire Transistors131 topic
- Quantum Dots131 topic
- Reliability131 topic
- Tunnel Field-Effect Transistors131 topic
- Wide Bandgap Semiconductors131 topic
- Atomic Layer Deposition121 topic
- High-k Dielectrics121 topic
- Hybrid Materials111 topic
- Metamaterials111 topic
- Negative Refraction111 topic
- Polyhedral Oligomeric Silsesquioxanes111 topic
- Photocatalyst101 topic
- Semiconductor101 topic
Where does Feng Lin work?
Feng Lin's main affiliation in the publication record is University of Electronic Science and Technology of China, China.
How many publications and citations does Feng Lin have?
OpenAlex counts 150 works and 3,719 citations for Feng Lin, an h-index of 34, ranking #1,330,071 of 7,710,434 researchers worldwide on the quality score.
Ranked on field-normalised citation excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
Other researchers named Feng Lin
- feng-lin-virginia-tech
- feng-lin-university-of-california-san-francisco
- feng-lin-wayne-state-university
- feng-lin-tsinghua-university
- feng-lin-case-western-reserve-university
- feng-lin-university-at-buffalo-state-university-of-new-york
- feng-lin-tsinghua-university-china
- feng-lin-national-university-of-singapore
- feng-lin-peking-university
- feng-lin-stanford-university
- feng-lin-nanjing-agricultural-university
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