Guangyuan Jiang
Guangyuan Jiang publishes mostly in Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, on topics such as GaN-based semiconductor devices and materials, Ga2O3 and related materials and Silicon Carbide Semiconductor Technologies.
- World rank
- #7,221,538 of 7,710,434 ranked researchers
- Rank in China
- #949,542 of 978,568
- Works
- 23
- Citations
- 124
- Citations per work
- 5.4
What does Guangyuan Jiang research?
Guangyuan Jiang's work is mostly in Physics and Astronomy (36%), Engineering (32%), Materials Science (30%).
Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.
The fields and subfields, with their numbers
- Physical Sciences2398.5%
- Physics and Astronomy836.2%
- Engineering731.9%
- Materials Science730.4%
- 1Condensed Matter Physics33% of their works
- 2Electrical and Electronic Engineering29% of their works
- 3Electronic, Optical and Magnetic Materials20% of their works
- 4Materials Chemistry10% of their works
- 5Biomedical Engineering3% of their works
- 6Atomic and Molecular Physics, and Optics3% of their works
Research topics
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Silicon Carbide Semiconductor Technologies
- ZnO doping and properties
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Quantum Structures and Devices
- Advanced Sensor and Energy Harvesting Materials
Which keywords describe Guangyuan Jiang's research?
The keywords of their largest research topics: Nanowires, Semiconductors, Band Parameters, III-Nitrides, Light-Emitting Diodes, Photodetectors, Power Devices and Semiconductor.
- Wearable
- Single-Photon Source
- Tunnel Field-Effect Transistors
- High-k Dielectrics
- Zinc Oxide
- Reliability
- Ultrawide Bandgap
- Semiconductor
- Photodetectors
- III-Nitrides
- Semiconductors
- Nanowires
- Band Parameters
- Light-Emitting Diodes
- Power Devices
- Gallium Oxide
- Nanostructures
- Wide Bandgap Semiconductors
- Atomic Layer Deposition
- Nanowire Transistors
- Quantum Dots
- Nanogenerators
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most.
All 22 words, with their numbers
- Nanowires323 topics
- Semiconductors302 topics
- Band Parameters252 topics
- III-Nitrides231 topic
- Light-Emitting Diodes231 topic
- Photodetectors212 topics
- Power Devices212 topics
- Semiconductor162 topics
- Gallium Oxide141 topic
- Ultrawide Bandgap141 topic
- Nanostructures71 topic
- Reliability71 topic
- Wide Bandgap Semiconductors71 topic
- Zinc Oxide71 topic
- Atomic Layer Deposition61 topic
- High-k Dielectrics61 topic
- Nanowire Transistors51 topic
- Tunnel Field-Effect Transistors51 topic
- Quantum Dots21 topic
- Single-Photon Source21 topic
- Nanogenerators11 topic
- Wearable11 topic
Where does Guangyuan Jiang work?
Guangyuan Jiang's main affiliation in the publication record is Shandong University, China.
How many publications and citations does Guangyuan Jiang have?
OpenAlex counts 23 works and 124 citations for Guangyuan Jiang, an h-index of 6, ranking #7,221,538 of 7,710,434 researchers worldwide on the quality score.
Ranked on field-normalised excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
Papers, co-authors, who cited this work and researchers on the nearest topics have tabs of their own, above. Is this your page? Claim it with your ORCID iD, or request a correction or removal.
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