Hideaki Matsuyama
Hideaki Matsuyama publishes mostly in Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics, on topics such as GaN-based semiconductor devices and materials, Semiconductor materials and devices and Silicon Carbide Semiconductor Technologies.
- World rank
- #2,352,772 of 7,710,434 ranked researchers
- Rank in Japan
- #46,306 of 383,136
- Works
- 37
- Citations
- 642
- Citations per work
- 17.4
What does Hideaki Matsuyama research?
Hideaki Matsuyama's work is mostly in Engineering (40%), Physics and Astronomy (38%), Materials Science (12%).
Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.
The fields and subfields, with their numbers
- Physical Sciences3389.8%
- Engineering1539.8%
- Physics and Astronomy1437.8%
- Materials Science512.2%
- Everything else410.2%
- 1Electrical and Electronic Engineering36% of their works
- 2Condensed Matter Physics28% of their works
- 3Atomic and Molecular Physics, and Optics10% of their works
- 4Electronic, Optical and Magnetic Materials7% of their works
- 5Materials Chemistry5% of their works
- 6Mechanical Engineering4% of their works
Research topics
- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Ga2O3 and related materials
- Semiconductor Quantum Structures and Devices
- Induction Heating and Inverter Technology
Which keywords describe Hideaki Matsuyama's research?
The keywords of their largest research topics: Band Parameters, Nanowires, III-Nitrides, Semiconductors, Atomic Layer Deposition, High-k Dielectrics, Power Devices and Epitaxial Growth.
- Induction Heating
- Single-Photon Source
- Gallium Oxide
- Schottky Barrier
- Metal-Semiconductor Contacts
- Reliability
- Epitaxial Growth
- High-k Dielectrics
- Semiconductors
- Nanowires
- Band Parameters
- III-Nitrides
- Atomic Layer Deposition
- Power Devices
- Semiconductor
- Wide Bandgap Semiconductors
- Nanowire Transistors
- Tunnel Field-Effect Transistors
- Quantum Dots
- Ultrawide Bandgap
- Resonant Inverters
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most. The words come from the keyword list OpenAlex gives each topic, not from the text of the papers, so a word can appear that none of the papers uses.
All 21 words, with their numbers
- Band Parameters302 topics
- Nanowires302 topics
- III-Nitrides261 topic
- Semiconductors261 topic
- Atomic Layer Deposition201 topic
- High-k Dielectrics201 topic
- Power Devices112 topics
- Epitaxial Growth92 topics
- Semiconductor82 topics
- Reliability71 topic
- Wide Bandgap Semiconductors71 topic
- Metal-Semiconductor Contacts51 topic
- Nanowire Transistors51 topic
- Schottky Barrier51 topic
- Tunnel Field-Effect Transistors51 topic
- Gallium Oxide41 topic
- Quantum Dots41 topic
- Single-Photon Source41 topic
- Ultrawide Bandgap41 topic
- Induction Heating31 topic
- Resonant Inverters31 topic
Where does Hideaki Matsuyama work?
Hideaki Matsuyama's main affiliation in the publication record is Fuji Electric (Japan), Japan.
How many publications and citations does Hideaki Matsuyama have?
OpenAlex counts 37 works and 642 citations for Hideaki Matsuyama, an h-index of 8, ranking #2,352,772 of 7,710,434 researchers worldwide on the quality score.
Ranked on field-normalised citation excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
Papers, co-authors, who cited this work and researchers on the nearest topics have tabs of their own, above. Is this your page? Claim it with your ORCID iD, or request a correction or removal.
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