M. Metz
M. Metz publishes mostly in Electrical and Electronic Engineering, Materials Chemistry and Organic Chemistry, on topics such as Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design and Ferroelectric and Negative Capacitance Devices.
- World rank
- #224,486 of 7,710,434 ranked researchers
- Rank in United States
- #82,961 of 1,627,098
- Works
- 78
- Citations
- 4.7k
- Citations per work
- 59.8
What does M. Metz research?
M. Metz's work is mostly in Engineering (55%), Materials Science (18%), Chemistry (13%).
Their six largest subfields, inside their fields and domains; the grey slice is everything else they publish. The interactive view splits every one of their works down to single topics.
The fields and subfields, with their numbers
- Physical Sciences6988.7%
- Engineering4355.4%
- Materials Science1417.7%
- Chemistry1013.0%
- Physics and Astronomy22.6%
- Everything else911.3%
- 1Electrical and Electronic Engineering48% of their works
- 2Materials Chemistry18% of their works
- 3Organic Chemistry9% of their works
- 4Biomedical Engineering7% of their works
- 5Inorganic Chemistry4% of their works
- 6Atomic and Molecular Physics, and Optics3% of their works
Research topics
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Nanowire Synthesis and Applications
- Organometallic Complex Synthesis and Catalysis
- Advanced Memory and Neural Computing
- 2D Materials and Applications
- Electronic and Structural Properties of Oxides
Which keywords describe M. Metz's research?
The keywords of their largest research topics: Atomic Layer Deposition, High-k Dielectrics, Neuromorphic Computing, Nanowire Transistors, Tunnel Field-Effect Transistors, Optoelectronic Devices, Ferroelectricity and Hafnium Oxide.
- Oxide Interfaces
- Two-Dimensional Materials
- Memristor
- Catalysis
- Nanosensors
- Hafnium Oxide
- Optoelectronic Devices
- Nanowire Transistors
- High-k Dielectrics
- Atomic Layer Deposition
- Neuromorphic Computing
- Tunnel Field-Effect Transistors
- Ferroelectricity
- Electronic Structure
- Nanowire
- Transition Metal
- Resistive Switching
- Van der Waals Heterostructures
- Two-Dimensional Electron Gases
Size is their works in the topics tagged with each word, from their 8 largest topics. Each links to the topic it comes from most. The words come from the keyword list OpenAlex gives each topic, not from the text of the papers, so a word can appear that none of the papers uses.
All 19 words, with their numbers
- Atomic Layer Deposition391 topic
- High-k Dielectrics391 topic
- Neuromorphic Computing292 topics
- Nanowire Transistors271 topic
- Tunnel Field-Effect Transistors271 topic
- Optoelectronic Devices232 topics
- Ferroelectricity201 topic
- Hafnium Oxide201 topic
- Electronic Structure162 topics
- Nanosensors141 topic
- Nanowire141 topic
- Catalysis101 topic
- Transition Metal101 topic
- Memristor91 topic
- Resistive Switching91 topic
- Two-Dimensional Materials91 topic
- Van der Waals Heterostructures91 topic
- Oxide Interfaces71 topic
- Two-Dimensional Electron Gases71 topic
Where does M. Metz work?
M. Metz's main affiliation in the publication record is Intel (United States), United States.
How many publications and citations does M. Metz have?
OpenAlex counts 78 works and 4,662 citations for M. Metz, an h-index of 36, ranking #224,486 of 7,710,434 researchers worldwide on the quality score.
Ranked on field-normalised citation excellence (50%), output (30%) and citations (20%). Counts come from OpenAlex author records, which occasionally merge different people who share a name or split one person into several.
Papers, co-authors, who cited this work and researchers on the nearest topics have tabs of their own, above. Is this your page? Claim it with your ORCID iD, or request a correction or removal.
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