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Topic · Electrical and Electronic Engineering

Ferroelectric and Negative Capacitance Devices

Ferroelectric and Negative Capacitance Devices is a research topic within Electrical and Electronic Engineering. Science Explorer counts 21k research works in it since 1954. 9.8% of them reached the world's top 10% most cited for their field and year.

This cluster of papers focuses on the development and application of ferroelectric devices, particularly in the context of low-power nanoscale applications. The research covers topics such as ferroelectricity in hafnium oxide thin films, negative capacitance in ferroelectric capacitors, doping effects on ferroelectric properties, and the use of ferroelectric field-effect transistors for memory and computing applications.

  • Ferroelectricity
  • Hafnium Oxide
  • Negative Capacitance
  • Field-Effect Transistors
  • Memory Applications
  • Thin Films
  • Doping
  • Nonvolatile Memory
  • Hyperdimensional Computing
  • Neuromorphic Computing
Research works
21k
fractional, since 1954
In the world top 10%
2k
per year above
Top-10% rate
9.8%
share of its works in the world top 10%
Growth, 2018-21 → 2022-25
+49%
the tick is no change
Largest producer
China
37% of the 10 largest, 2022-now
Ferroelectric and Negative Capacitance Devices

Which countries lead Ferroelectric and Negative Capacitance Devices research?

By volume, China and the United States publish the most (2.5k and 1.3k works in 2022-now).

By volume, 2022-now

  1. 1 China 2.5k works
  2. 2 United States 1.3k works
  3. 3 India 829 works
  4. 4 South Korea 771 works
  5. 5 Germany 381 works
  6. 6 Taiwan 272 works
  7. 7 Japan 251 works
  8. 8 United Kingdom 174 works
  9. 9 France 167 works
  10. 10 Italy 143 works

How concentrated that is

The same countries as shares of everything the list above accounts for. A node where two countries do two thirds of the work and one spread evenly across twelve read alike as a ranking and not at all alike here.

China: 36.6%United States: 19.6%India: 12.1%South Korea: 11.3%6 others listed: 20.3%37%largest
China2,506 · 36.6%United States1,344 · 19.6%India829 · 12.1%South Korea771 · 11.3%6 others listed1,388 · 20.3%

Shares of the rows listed above, not of the whole node.

Which institutions lead Ferroelectric and Negative Capacitance Devices research?

By volume in 2022-now, Chinese Academy of Sciences publishes the most Ferroelectric and Negative Capacitance Devices research, followed by Peking University and Tsinghua University.

By volume, 2022-now

  1. 1 Chinese Academy of SciencesChina 269 works
  2. 2 Peking UniversityChina 112 works
  3. 3 Tsinghua UniversityChina 89 works
  4. 4 Seoul National UniversitySouth Korea 75 works
  5. 5 Fudan UniversityChina 72 works
  6. 6 Korea Advanced Institute of Science and TechnologySouth Korea 66 works
  7. 7 National Yang Ming Chiao Tung UniversityTaiwan 65 works
  8. 8 Xidian UniversityChina 63 works
  9. 9 Centre National de la Recherche ScientifiqueFrance 62 works
  10. 10 Georgia Institute of TechnologyUnited States 61 works

Who are the leading researchers in Ferroelectric and Negative Capacitance Devices?

The most-cited researchers publishing on Ferroelectric and Negative Capacitance Devices include Zhong Lin Wang, Yoshua Bengio and Yury G. Gogotsi.

  1. 1 Zhong Lin Wang United States 491k citations
  2. 2 Yoshua Bengio Canada 476k citations
  3. 3 Yury G. Gogotsi United States 313k citations
  4. 4 Wei Huang China 267k citations
  5. 5 Xiaogang Wang China 260k citations
  6. 6 Kenji Watanabe Japan 237k citations
  7. 7 Takashi Taniguchi Japan 227k citations
  8. 8 Kai You Wang China 224k citations
  9. 9 Ilya Sutskever Canada 219k citations
  10. 10 Lei Jiang China 214k citations

Ranked by citations received across their whole record, among researchers with at least three works on this topic.

What are the most cited papers in Ferroelectric and Negative Capacitance Devices?

The most cited paper in Ferroelectric and Negative Capacitance Devices is "Exchange bias" (Josep Nogués, Iván K. Schuller, 1999), with 4,677 citations. Next come "DistilBERT, a distilled version of BERT: smaller, faster, cheaper and lighter" (4,596) and "Efficient Processing of Deep Neural Networks: A Tutorial and Survey" (4,237).

Most cited papers
#PaperReleasedCitations
1 Exchange bias Josep Nogués, Iván K. Schuller · Journal of Magnetism and Magnetic Materials Feb 1999 4,677
2 DistilBERT, a distilled version of BERT: smaller, faster, cheaper and lighter Schmidt, Wilma Johanna, Grangel-González, Irlan, Paschke, Adrian et al. · arXiv (Cornell University) PreprintOpen access 2 Oct 2019 4,596
3 Efficient Processing of Deep Neural Networks: A Tutorial and Survey Vivienne Sze, Yu‐Hsin Chen, Tien-Ju Yang et al. · Proceedings of the IEEE 20 Nov 2017 4,237
4 Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum Luqiao Liu, Chi‐Feng Pai, Yi Li et al. · Science Open access 3 May 2012 4,158
5 Loihi: A Neuromorphic Manycore Processor with On-Chip Learning Mike Davies et al. · IEEE Micro 2018 3,962
All 100 most cited papers, with filters and sorting

Where is Ferroelectric and Negative Capacitance Devices research done?

The largest centres of Ferroelectric and Negative Capacitance Devices research in 2022-now are Beijing (China), Seoul (South Korea), Shanghai (China) and Xi'an (China). Among places with at least 20 works in it, it is an unusually large share of all research in Piscataway, Hsinchu and Pohang.

Largest cities, 2022-now

  1. 1 BeijingChina 641 works
  2. 2 SeoulSouth Korea 455 works
  3. 3 ShanghaiChina 244 works
  4. 4 Xi'anChina 148 works
  5. 5 NanjingChina 145 works
  6. 6 HsinchuTaiwan 140 works
  7. 7 HangzhouChina 125 works
  8. 8 SingaporeSingapore 123 works
  9. 9 WuhanChina 119 works
  10. 10 TokyoJapan 105 works

Where it is the local speciality

  1. PiscatawayUS · 20.2 works42×
  2. HsinchuTW · 139.9 works21×
  3. PohangKR · 38.6 works19×
  4. Santa ClaraUS · 36.9 works18×
  5. DresdenDE · 82.0 works12×
← less than its size predicts1×more →

Location quotient: how much more of its research is in Ferroelectric and Negative Capacitance Devices than the world average.

See Ferroelectric and Negative Capacitance Devices on the map

Where is the best place to study Ferroelectric and Negative Capacitance Devices?

Among universities, judged by research, National University of Singapore, Korea Advanced Institute of Science and Technology and Tsinghua University score highest, combining excellence, specialisation, size, growth and international reach. Research strength is one signal when choosing where to study; it does not measure teaching.

0%10%20%30%mean 18.08%fractional works in this field (log) →share of work in the world top 10% →National University …Korea Advanced Insti…Tsinghua UniversitySeoul National Unive…
above the meannear itbelow it

One dot per university in the first ten of the table below, at the default weights. The upper left is the interesting corner: small places doing unusually strong work.

Excellenceshare of its work in the world top 10%, 2022-now and all time averaged
40%
Specialisationhow much of its work is in this field, counted up to 10× the world share
10%
Sizeits output in this field, on a log scale
30%
Growthoutput growth, counted from -20% to +20%
10%
Internationalshare of its work with a co-author abroad
10%
Each slider sets a weight; the share it gets of the score is beside it.
#UniversityScoreTop 10%SpecialisationWorksGrowth
1National University of SingaporeSingapore 73.717.6%6.8×56 +47.4%
2Korea Advanced Institute of Science and TechnologySouth Korea 73.316.3%20.3×66 +63.2%
3Tsinghua UniversityChina 71.315.3%5.5×89 +34.5%
4Seoul National UniversitySouth Korea 69.712.4%9.5×75 +26.6%
5Fudan UniversityChina 68.215.9%6.5×72 +100.0%
6Peking UniversityChina 67.910.2%7.9×112 +112.2%
7Dongguk UniversitySouth Korea 66.920.2%24.8×33 +116.5%
8University of CambridgeUnited Kingdom 64.022.4%1.7×14 +147.5%
9Hong Kong Polytechnic UniversityChina 64.024.7%2.2×13 +70.9%
10Sejong UniversitySouth Korea 63.825.8%10.0×13 +31.8%

Universities only. The score blends excellence (40%), size (30%), specialisation (10%), growth (10%), international reach (10%), 2022-now; growth compares 2018-21 with 2022-25 and counts up to +20%, since a jump from a small base is mostly noise.

Every institution in Ferroelectric and Negative Capacitance Devices, country by country

Is Ferroelectric and Negative Capacitance Devices research growing?

Output in 2022-2025 was 49% higher than in 2018-2021, peaking in 2025. The fastest-growing topics are Ferroelectric and Negative Capacitance Devices.

still counting19801990200020102020
grewheldshrank

The same series as a ribbon: one cell per year, darker for more. The line above answers how much; this answers when.

Its share of all research

Growing output can still be a shrinking share: all of science grows. This is Ferroelectric and Negative Capacitance Devices as a percentage of every work published that year, 0.027% in 2024.

still counting0.020%0.040%Ferroelectric and Negative Capacitance Devices0.034% in 202519801990200020102020

Fractional works of Ferroelectric and Negative Capacitance Devices over all fractional works that year. How the balance of science has shifted.

How much of it reaches the world top 10%

Year by year.

still counting5%10%15%Ferroelectric and Negative Capacitance Devices9.7% in 2025200020102020

Of each year's works in it, the share that reached the world's 10% most cited for their field and year. A field is the world for its own topics, so there is no other line to hold it against.

Which topics inside it are moving

Growth and decline on one axis around a shared zero. Two lists side by side hide the thing that matters: whether the growth dwarfs the decline, or the other way round.

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