Most cited papers in Ferroelectric and Negative Capacitance Devices
What are the most cited papers in Ferroelectric and Negative Capacitance Devices?
The most cited paper in Ferroelectric and Negative Capacitance Devices is "Exchange bias" (Josep Nogués, Iván K. Schuller, 1999), with 4,677 citations. Next come "DistilBERT, a distilled version of BERT: smaller, faster, cheaper and lighter" (4,596) and "Efficient Processing of Deep Neural Networks: A Tutorial and Survey" (4,237).
Showing 50 of 100 papers. Every paper with more than 917 citations is listed.
| # | Paper | ||
|---|---|---|---|
| 1 | Exchange bias Josep Nogués, Iván K. Schuller · Journal of Magnetism and Magnetic Materials | Feb 1999 | 4,677 |
| 2 | DistilBERT, a distilled version of BERT: smaller, faster, cheaper and lighter Schmidt, Wilma Johanna, Grangel-González, Irlan, Paschke, Adrian et al. · arXiv (Cornell University) | 2 Oct 2019 | 4,596 |
| 3 | Efficient Processing of Deep Neural Networks: A Tutorial and Survey Vivienne Sze, Yu‐Hsin Chen, Tien-Ju Yang et al. · Proceedings of the IEEE | 20 Nov 2017 | 4,237 |
| 4 | Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum Luqiao Liu, Chi‐Feng Pai, Yi Li et al. · Science | 3 May 2012 | 4,158 |
| 5 | Loihi: A Neuromorphic Manycore Processor with On-Chip Learning Mike Davies et al. · IEEE Micro | 2018 | 3,962 |
| 6 | Memristive devices for computing J. Joshua Yang, Dmitri B. Strukov, Duncan R. Stewart · Nature Nanotechnology | 27 Dec 2012 | 3,885 |
| 7 | Memristive switching mechanism for metal/oxide/metal nanodevices J. Joshua Yang, Matthew D. Pickett, Xuema Li et al. · Nature Nanotechnology | 15 Jun 2008 | 2,993 |
| 8 | Tunnel field-effect transistors as energy-efficient electronic switches Adrian Mihai Ionescu, Heike Riel · Nature | Nov 2011 | 2,957 |
| 9 | Working memory span tasks: A methodological review and user’s guide Andrew R. A. Conway, Michael J. Kane, Michael F. Bunting et al. · Psychonomic Bulletin & Review | Oct 2005 | 2,918 |
| 10 | Ferroelectricity in hafnium oxide thin films Tim S. Böscke, Johannes Müller, D. Bräuhaus et al. · Applied Physics Letters | 5 Sep 2011 | 2,828 |
| 11 | Metal–Oxide RRAM H.-S. Philip Wong, Heng-Yuan Lee, Shimeng Yu et al. · Proceedings of the IEEE | 25 May 2012 | 2,746 |
| 12 | Antiferromagnetic spintronics Tomas Jungwirth, X. Martí, P. Wadley et al. · Nature Nanotechnology | Mar 2016 | 2,472 |
| 13 | High Performance Multilayer MoS2 Transistors with Scandium Contacts Saptarshi Das, Hong-Yan Chen, Ashish Verma Penumatcha et al. · Nano Letters | 14 Dec 2012 | 2,441 |
| 14 | Event-Based Vision: A Survey Guillermo Gallego, Tobi Delbruck, Garrick Orchard et al. · IEEE Transactions on Pattern Analysis and Machine Intelligence | 10 Jul 2020 | 2,292 |
| 15 | Memory devices and applications for in-memory computing Abu Sebastian, Manuel Le Gallo, Riduan Khaddam-Aljameh et al. · Nature Nanotechnology | 30 Mar 2020 | 2,274 |
| 16 | In-memory computing with resistive switching devices Daniele Ielmini, H.‐S. Philip Wong · Nature Electronics | 5 Jun 2018 | 2,270 |
| 17 | Are MXenes Promising Anode Materials for Li Ion Batteries? Computational Studies on Electronic Properties and Li Storage Capability of Ti 3 C 2 and Ti 3 C 2 X 2 (X = F, OH) Monolayer Qing Hua Tang, Zhen Ping Zhou, Pan‐Wen Shen · Journal of the American Chemical Society | 18 Sep 2012 | 2,252 |
| 18 | A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures Myoung‐Jae Lee, Chang Bum Lee, Dongsoo Lee et al. · Nature Materials | 10 Jul 2011 | 2,224 |
| 19 | Towards spike-based machine intelligence with neuromorphic computing Kaushik Roy, Akhilesh Jaiswal, Priyadarshini Panda · Nature | 27 Nov 2019 | 2,223 |
| 20 | Fully hardware-implemented memristor convolutional neural network Peng Yao, Huaqiang Wu, Bin Gao et al. · Nature | 29 Jan 2020 | 2,196 |
| 21 | Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices Sayeef Salahuddin, Supriyo Datta · Nano Letters | 6 Dec 2007 | 2,176 |
| 22 | The future of electronics based on memristive systems Mohammed Affan Zidan, John Paul Strachan, Wei Lü · Nature Electronics | 21 Dec 2017 | 2,135 |
| 23 | Atomic structure of conducting nanofilaments in TiO2 resistive switching memory Deok‐Hwang Kwon, Kyung Min Kim, Jae Hyuck Jang et al. · Nature Nanotechnology | 17 Jan 2010 | 2,102 |
| 24 | A Survey on Hallucination in Large Language Models: Principles, Taxonomy, Challenges, and Open Questions Lei Huang, Weijiang Yu, Weitao Ma et al. · ACM Transactions on Information Systems | 20 Nov 2024 | 2,084 |
| 25 | Novel Electronic and Magnetic Properties of Two‐Dimensional Transition Metal Carbides and Nitrides Mohammad Khazaei, M. Arai, Taizo Sasaki et al. · Advanced Functional Materials | 4 Dec 2012 | 2,006 |
| 26 | ‘Memristive’ switches enable ‘stateful’ logic operations via material implication Julien L. Borghetti, Gregory S. Snider, Philip J. Kuekes et al. · Nature | 7 Apr 2010 | 1,951 |
| 27 | Current-Induced Switching of Perpendicularly Magnetized Magnetic Layers Using Spin Torque from the Spin Hall Effect Luqiao Liu, O. J. Lee, Theodore Gudmundsen et al. · Physical Review Letters | 29 Aug 2012 | 1,872 |
| 28 | Block Copolymer Lithography: Periodic Arrays of ~10 11 Holes in 1 Square Centimeter Miri S. Park, Christopher Harrison, P. M. Chaikin et al. · Science | 30 May 1997 | 1,862 |
| 29 | Neuromorphic Silicon Neuron Circuits Giacomo Indiveri, B. Linares-Barranco, Tara Julia Hamilton et al. · Frontiers in Neuroscience | 2011 | 1,844 |
| 30 | Ferroelectricity in Simple Binary ZrO 2 and HfO 2 Johannes Müller, Tim S. Böscke, U. Schröder et al. · Nano Letters | 19 Jul 2012 | 1,818 |
| 31 | Effect of Synthesis on Quality, Electronic Properties and Environmental Stability of Individual Monolayer Ti 3 C 2 MXene Flakes Alexey Lipatov, Mohamed Alhabeb, Maria R. Lukatskaya et al. · Advanced Electronic Materials | 2 Nov 2016 | 1,758 |
| 32 | Double-Gate Tunnel FET With High- Gate Dielectric Kathy Boucart, Adrian Mihai Ionescu · IEEE Transactions on Electron Devices | 28 Jun 2007 | 1,668 |
| 33 | Low-Voltage Tunnel Transistors for Beyond CMOS Logic Alan Seabaugh, Qin Zhang · Proceedings of the IEEE | 5 Nov 2010 | 1,642 |
| 34 | High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals Sunkook Kim, Aniruddha Konar, Wan-Sik Hwang et al. · Nature Communications | 21 Aug 2012 | 1,640 |
| 35 | MXene: a promising transition metal carbide anode for lithium-ion batteries Michael Naguib, Jérémy Come, Boris Dyatkin et al. · Electrochemistry Communications | 9 Jan 2012 | 1,600 |
| 36 | A Review on Conduction Mechanisms in Dielectric Films Fu‐Chien Chiu · Advances in Materials Science and Engineering | 2014 | 1,561 |
| 37 | ISAAC Ali Reza Shafiee, Anirban Nag, Naveen Muralimanohar et al. · ACM SIGARCH Computer Architecture News | 18 Jun 2016 | 1,557 |
| 38 | Role of Surface Structure on Li-Ion Energy Storage Capacity of Two-Dimensional Transition-Metal Carbides Yu Xie, Michael Naguib, Vadym N. Mochalin et al. · Journal of the American Chemical Society | 28 Mar 2014 | 1,543 |
| 39 | Review on spintronics: Principles and device applications Atsufumi Hirohata, K. Yamada, Yoshinobu Nakatani et al. · Journal of Magnetism and Magnetic Materials | 9 Mar 2020 | 1,501 |
| 40 | Second Order Derivatives for Network Pruning: Optimal Brain Surgeon Babak Hassibi, David G. Stork, Stork Crc. Ricoh. Com · CaltechAUTHORS (California Institute of Technology) | 1993 | 1,486 |
| 41 | SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices Sandeep Kaur Kingra, Vivek Parmar, Che‐Chia Chang et al. · Scientific Reports | 13 Feb 2020 | 1,451 |
| 42 | Resistance switching memories are memristors Leon Ong Chua · Applied Physics A | 27 Jan 2011 | 1,449 |
| 43 | An Empirical Exploration of Recurrent Network Architectures Rafał Józefowicz, Wojciech Zaremba, Ilya Sutskever | 6 Jul 2015 | 1,406 |
| 44 | Recent progress in resistive random access memories: Materials, switching mechanisms, and performance Feng Pan, Shuang Gao, Chen Chen et al. · Materials Science and Engineering R Reports | 10 Jul 2014 | 1,400 |
| 45 | Neuromorphic computing with nanoscale spintronic oscillators Jacob Torrejón, Mathieu Riou, Flavio Abreu Araujo et al. · Nature | Jul 2017 | 1,389 |
| 46 | Promises and prospects of two-dimensional transistors Yuan Liu, Xidong Duan, Xidong Duan et al. · Nature | 3 Mar 2021 | 1,367 |
| 47 | Local Strain Engineering in Atomically Thin MoS 2 Andrés Castellanos-Gómez, Rafael Roldán, E. Cappelluti et al. · Nano Letters | Oct 2013 | 1,307 |
| 48 | Analogue signal and image processing with large memristor crossbars Can Li, Miao Hu, Yunning Li et al. · Nature Electronics | 30 Nov 2017 | 1,305 |
| 49 | Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures Tiancheng Song, Xinghan Cai, Matisse Wei-Yuan Tu et al. · Science | 3 May 2018 | 1,297 |
| 50 | Multiferroic memories James Floyd Scott · Nature Materials | 11 Mar 2007 | 1,289 |
Citations are OpenAlex's own counts, from its 2026-09-23 snapshot, so the ranking can differ from Google Scholar or Web of Science. A paper is listed for a field when OpenAlex files it under one of the field's topics; retracted papers and papers whose citation count cannot be traced to citing works are left out, and a preprint and the article it became are shown once. Release dates are OpenAlex's: where a source gave only a month or a year, that is what is shown. How the lists are chosen.