Ferroelectric and Negative Capacitance Devices

Ferroelectric and Negative Capacitance Devices is a research topic within Electrical and Electronic Engineering. Science Explorer counts 21k research works in it since 1954. 9.8% of them reached the world's top 10% most cited for their field and year.

This cluster of papers focuses on the development and application of ferroelectric devices, particularly in the context of low-power nanoscale applications. The research covers topics such as ferroelectricity in hafnium oxide thin films, negative capacitance in ferroelectric capacitors, doping effects on ferroelectric properties, and the use of ferroelectric field-effect transistors for memory and computing applications.

• Ferroelectricity
• Hafnium Oxide
• Negative Capacitance
• Field-Effect Transistors
• Memory Applications
• Thin Films
• Doping
• Nonvolatile Memory
• Hyperdimensional Computing
• Neuromorphic Computing